Ibumba rya silikoni karubide (SiC) rifite isuku nyinshi ryagaragaye nk'ibikoresho byiza ku bice by'ingenzi mu nganda za semiconductor, aerospace, na chemical bitewe n'uburyo bwazo budasanzwe bwo gutwara ubushyuhe, kudahindagurika kwa shimi, ndetse n'imbaraga za mekanike. Bitewe no kwiyongera kw'ibikenewe ku bikoresho bya silikoni bifite imikorere myiza kandi bidahumanya ikirere, iterambere ry'ikoranabuhanga rigezweho kandi rishobora kwaguka ku bikoresho bya silikoni bifite isuku nyinshi ryabaye ubushakashatsi bwibanze ku isi yose. Iyi nyandiko isuzuma uburyo bugezweho bwo gutegura ibikoresho bya silikoni bifite isuku nyinshi, harimo gusinya ibikoresho bya silikoni, gusinya ibikoresho bidakoresha umuvuduko (PS), gushyushya (HP), gusinya plasma (SPS), no gukora inyongeramusaruro (AM), hibandwa ku kuganira ku buryo bwo gusinya ibikoresho, ibipimo by'ingenzi, imiterere y'ibikoresho, n'imbogamizi zihari kuri buri gikorwa.
Ikoreshwa rya SiC ceramics mu bya gisirikare no mu by'ubuhanga
Muri iki gihe, ibice bya ceramic bya SiC bifite isuku nyinshi bikoreshwa cyane mu bikoresho byo gukora silicon wafer, bikagira uruhare mu bikorwa by'ingenzi nko gusiga ifu, gushushanya, gushushanya, no gutera ioni. Bitewe n'iterambere ry'ikoranabuhanga rya wafer, kongera ingano ya wafer byabaye ikintu gikomeye. Ingano ya wafer isanzwe iriho ubu ni mm 300, bigeraho uburinganire bwiza hagati y'ikiguzi n'ubushobozi bwo kuyikora. Ariko, bitewe n'Itegeko rya Moore, umusaruro wa wafer wa mm 450 usanzwe uri ku murongo w'ibyigwa. Wafer nini akenshi zikenera imbaraga nyinshi z'imiterere kugira ngo zirwanye guhindagurika no kwangirika, birushaho gutuma icyifuzo cy'ibice binini, bikomeye kandi bisukuye cyane bya SiC. Mu myaka ya vuba aha, gukora inyongera (3D printing), nk'ikoranabuhanga ryihuse ryo gushushanya ridasaba ibumba, ryagaragaje ubushobozi bukomeye mu gukora ibice bya ceramic bya SiC bifite isuku nyinshi bitewe n'uko byubakwa ku rundi ruhande n'ubushobozi bwo gushushanya buhindagurika, bikurura abantu benshi.
Iyi nyandiko izasesengura uburyo butanu bugaragara bwo gutegura ibikoresho bya SiC ceramics bifite isuku nyinshi—gukoresha recrystallization sintering, gukoresha pressure sintering, gushyuha cyane, gusohora plasma, no gukora inyongeramusaruro—ibanda ku buryo bwo gusohora, ingamba zo kunoza imikorere, imiterere y’ibikoresho, n’uburyo bwo kubikoresha mu nganda.
Ibisabwa ku bikoresho fatizo bya silikoni bifite isuku nyinshi
I. Gutunganya ibikoresho byo gukaraba (Recrystallization)
Karubide ya silikoni isubijwemo (RSiC) ni ibikoresho bya SiC bifite isuku nyinshi byateguwe bidakoresheje ubushyuhe bwinshi bwa 2100–2500°C. Kuva Fredriksson yavumbura bwa mbere uburyo bwo kongera gukoresha ubushyuhe mu mpera z'ikinyejana cya 19, RSiC yibanzweho cyane bitewe n'imipaka yayo y'ibinyampeke isukuye kandi nta ngero z'ibirahuri n'imyanda irimo. Mu bushyuhe bwinshi, SiC igaragaza umuvuduko mwinshi w'umwuka, kandi uburyo bwayo bwo gutwika bushingiye ahanini ku buryo bwo guhumeka no gushonga: ibinyampeke bito bihinduka umwuka kandi bigashyirwa ku buso bw'ibinyampeke binini, bigatera imbere gukura kw'ijosi no guhuza neza ibinyampeke, bityo bikongera imbaraga z'ibikoresho.
Mu 1990, Kriegesmann yateguye RSiC ifite ubucucike bwa 79.1% akoresheje slip casting kuri 2200°C, aho igice cyayo cyagaragazaga imiterere mito igizwe n'ibinyampeke bikomeye n'imyenge. Nyuma yaho, Yi n'abandi bakoresheje gel casting kugira ngo bategure imibiri y'icyatsi kibisi maze bayisiga kuri 2450°C, babona RSiC ceramics ifite ubucucike bwa 2.53 g/cm³ n'imbaraga zo kuzunguruka za 55.4 MPa.
Ubuso bwa SEM bwa RSiC bwavunitse
Ugereranyije na SiC y’ubucucike, RSiC ifite ubucucike buke (hafi 2.5 g/cm³) na porosity ifunguye hafi 20%, bigabanyiriza imikorere yayo mu gukoresha imbaraga nyinshi. Kubwibyo, kunoza ubucucike n’imiterere ya mekanike ya RSiC byabaye ubushakashatsi bw’ingenzi. Sung n’abandi batanze igitekerezo cyo kwinjiza silikoni ishongeshejwe mu byuma bivanze bya karuboni/β-SiC no kongera kuyishyiramo ku bushyuhe bwa 2200°C, byubaka neza imiterere y’urusobe rw’amakuru igizwe n’ibinyampeke by’amakara bya α-SiC. RSiC yavuyemo yagize ubucucike bwa 2.7 g/cm³ n’imbaraga zo kuzunguruka za 134 MPa, bikomeza kurangwa n’ubudahangarwa bwiza mu bushyuhe bwinshi.
Kugira ngo bongere ubucucike, Guo n'abandi bakoresheje ikoranabuhanga rya polymer infiltration and pyrolysis (PIP) mu kuvura RSiC mu buryo bwinshi. Bakoresheje ibisubizo bya PCS/xylene na SiC/PCS/xylene slurries nk'ibice byinjiramo, nyuma y'ingendo za PIP 3-6, ubucucike bwa RSiC bwarushijeho kuba bwiza cyane (kugeza kuri 2.90 g/cm³), hamwe n'imbaraga zayo zo guhindagurika. Byongeye kandi, batanze ingamba zo guhuza PIP na recrystallization: pyrolysis kuri 1400°C hagakurikiraho recrystallization kuri 2400°C, bikuraho neza uduce twazibye kandi bigagabanya porosity. Ibikoresho bya nyuma bya RSiC byageze ku bucucike bwa 2.99 g/cm³ n'imbaraga zo guhindagurika za 162.3 MPa, bigaragaza imikorere myiza cyane.
Amashusho ya SEM yerekana imiterere mito ya RSiC ikozwe neza nyuma yo guteranya polymer na pyrolysis (PIP) - recrystallization cycles: RSiC y'ibanze (A), nyuma ya PIP ya mbere - recrystallization cycle (B), na nyuma ya cycle ya gatatu (C)
II. Gutera Indabyo Zidafite Umuvuduko
Ibumba rya silikoni ridafite umuvuduko (SiC) rikunze gukorwa hakoreshejwe ifu ya SiC nziza cyane, ikoze neza cyane nk'ibikoresho fatizo, hamwe n'ibikoresho bike byo gusya, bigasigwa mu kirere kidakora cyangwa mu kirere kirimo umwuka kuri 1800–2150°C. Ubu buryo burakwiriye mu gukora ibice binini kandi byuzuye imiterere ya silikoni. Ariko, kubera ko SiC ifatanye cyane, ubushobozi bwayo bwo kwiyamamaza ni buke cyane, bigatuma kwiyamamaza bigorana nta bikoresho byo gusya.
Hashingiwe ku buryo bwo gusohora umwuka, gusohora umwuka udafite umuvuduko bishobora kugabanywamo ibice bibiri: gusohora umwuka udafite umuvuduko udasanzwe (PLS-SiC) n'ugusohora umwuka udafite umuvuduko udasanzwe (PSS-SiC).
1.1 PLS-SiC (Gusiba mu gice cy'amazi)
PLS-SiC ikunze gucukurwa munsi ya 2000°C hongewemo hafi 10% by'ibikoresho byo gucukura mu mazi (nka Al₂O₃, CaO, MgO, TiO₂, na okiside zidasanzwe RE₂O₃) kugira ngo bikore igice cy'amazi, bitera kongera gutunganya ibice no kohereza ibintu byinshi kugira ngo bigere ku bwinshi. Iyi nzira ikwiriye ibikoresho bya SiC byo mu rwego rw'inganda, ariko nta raporo zigeze zigaragaza ko SiC ifite isuku nyinshi yagezweho binyuze mu gucukura mu mazi.
1.2 PSS-SiC (Gukora Sintering mu buryo buhamye)
PSS-SiC ikubiyemo ubucucike bwa solid-state ku bushyuhe buri hejuru ya 2000°C hamwe na 1 wt.% by'inyongeramusaruro. Iyi gahunda ishingiye ahanini ku gukwirakwira kwa atome no gusimbuza ibinyampeke bitewe n'ubushyuhe bwinshi kugira ngo igabanye ingufu zo hejuru kandi igere ku bucucike. Sisitemu ya BC (boron-carbon) ni uruvange rusanzwe rw'inyongeramusaruro, rushobora kugabanya ingufu zo ku mupaka w'ibinyampeke no gukuraho SiO₂ ku buso bwa SiC. Ariko, inyongeramusaruro gakondo za BC zikunze gushyiramo imyanda isigaye, bigagabanya ubuziranenge bwa SiC.
Mu kugenzura ingano y’inyongera (B 0.4 wt.%, C 1.8 wt.%) no gushyushya kuri 2150°C mu gihe cy’amasaha 0.5, habonetse ibumba rya SiC rifite isuku nyinshi rifite isuku ya 99.6 wt.% n’ubucucike bwa 98.4%. Imiterere ya microstructure yagaragaje ibinyampeke by’inkingi (bimwe birenga 450 µm mu burebure), bifite imyenge mito ku mbibi z’ibinyampeke n’uduce twa grafiti imbere mu binyampeke. Ibumba ryagaragaje imbaraga zo kuzunguruka za 443 ± 27 MPa, modulus ya elastic ya 420 ± 1 GPa, hamwe n’igipimo cyo kwagura ubushyuhe cya 3.84 × 10⁻⁶ K⁻¹ mu bushyuhe bw’icyumba kugeza kuri 600°C, bigaragaza imikorere myiza muri rusange.
Imiterere mito ya PSS-SiC: (A) Ishusho ya SEM nyuma yo gukosora no gushushanya NaOH; (BD) Ishusho ya BSD nyuma yo gukosora no gushushanya
III. Gushyushya Gukanda
Gushyushya (HP) sintering ni uburyo bwo gukurura ubushyuhe n'umuvuduko umwe icyarimwe bikoresha ubushyuhe n'umuvuduko umwe ku bikoresho by'ifu mu gihe cy'ubushyuhe bwinshi n'umuvuduko mwinshi. Umuvuduko mwinshi ubuza cyane ishingwa ry'imyenge kandi ukagabanya gukura kw'ibinyampeke, mu gihe ubushyuhe bwinshi butuma ibinyampeke bihuzwa kandi bigashyirwaho inyubako nini, amaherezo bigatanga ubucucike bwinshi kandi bufite isuku nyinshi bwa SiC. Bitewe n'imiterere yo gukanda icyerekezo, iyi nzira ikunze gutera anisotropy y'ibinyampeke, bigira ingaruka ku miterere ya mekanike n'iyangirika.
Ibumba rya SiC ryuzuye riragoye kurikuramo nta nyongeramusaruro, risaba gushyushya cyane. Nadeau n'abandi bateguye neza SiC yuzuye ifite ubukana nta nyongeramusaruro kuri 2500°C na 5000 MPa; Sun n'abandi babonye ibikoresho bya β-SiC bifite ubukana bwa Vickers bugera kuri 41.5 GPa kuri 25 GPa na 1400°C. Hakoreshejwe igitutu cya 4 GPa, ibumba rya SiC rifite ubukana bwa hafi 98% na 99%, ubukana bwa 35 GPa, na modulus ya elastic ya 450 GPa byateguwe kuri 1500°C na 1900°C, uko bikurikirana. Ifu ya SiC ifite ubukana bwa micron kuri 5 GPa na 1500°C yatanze ibumba rifite ubukana bwa 31.3 GPa n'ubucucike bwa 98.4%.
Nubwo ibi bisubizo bigaragaza ko umuvuduko mwinshi cyane ushobora gutuma habaho ubucucike butagira inyongeramusaruro, uburyo ibikoresho bikenewe bitoroshye kandi bihenze bigabanya ikoreshwa ry’inganda. Kubwibyo, mu gutegura mu buryo bufatika, inyongeramusaruro cyangwa ifu ikunze gukoreshwa mu kongera imbaraga zituma ibintu bishonga.
Hakoreshejwe resin ya phenolic ya wt.% nk'inyongeramusaruro no gusya kuri 2350°C na 50 MPa, habonetse SiC ceramics ifite igipimo cyo kwiyongera cya 92% n'ubuziranenge bwa 99.998%. Hakoreshejwe ingano nto y'inyongeramusaruro (aside boric na D-fructose) no gusya kuri 2050°C na 40 MPa, hateguwe SiC ifite ubuziranenge bwinshi ifite ubucucike >99.5% n'ibice bya B bisigaye bya 556 ppm gusa. Amashusho ya SEM yagaragaje ko, ugereranije n'ingero zidafite umuvuduko, ingero zishyushye zari zifite utubuto duto, imyenge mike, n'ubucucike bwinshi. Uburemere bwo kuzunguruka bwari 453.7 ± 44.9 MPa, kandi modulus ya elastic yageze kuri 444.3 ± 1.1 GPa.
Mu kongera igihe cyo gufata kuri 1900°C, ingano y'ibinyampeke yariyongereye kuva kuri 1.5 μm igera kuri 1.8 μm, naho ubushobozi bwo gutwara ubushyuhe bwariyongereye kuva kuri 155 kugeza kuri 167 W·m⁻¹·K⁻¹, mu gihe nanone byongera ubudahangarwa bw'ingufu muri plasma.
Mu gihe cy’ubushyuhe bwa 1850°C na 30 MPa, gukanda bushyushye no gukanda bushyushye byihuse bya ifu ya SiC ya granulated na annealed byatanze keramike yuzuye ya β-SiC idafite inyongera, ifite ubucucike bwa 3.2 g/cm³ n’ubushyuhe bwo gutwika buri munsi ya 150–200°C ugereranije n’uburyo busanzwe bwo gukora. Seramike yagaragaje ubukana bwa 2729 GPa, gukomera kwa 5.25–5.30 MPa·m^1/2, kandi irwanya cyane gukanda (igipimo cyo gukanda cya 9.9 × 10⁻¹⁰ s⁻¹ na 3.8 × 10⁻⁹ s⁻¹ kuri 1400°C/1450°C na 100 MPa).
(A) Ishusho ya SEM y'ubuso busesuye; (B) Ishusho ya SEM y'ubuso busesuye; (C, D) Ishusho ya BSD y'ubuso busesuye
Mu bushakashatsi bwa 3D ku bijyanye n'ibumba rya piezoelectric, plaque ya ceramic, nk'ikintu cy'ingenzi gikora ku ikorwa n'imikorere, yabaye ikintu cy'ingenzi mu gihugu no mu mahanga. Ubushakashatsi buriho muri rusange bugaragaza ko ibipimo nk'ingano y'uduce tw'ifu, ubukana bw'urubura, n'ibikubiye mu bintu bikomeye bigira ingaruka ku bwiza bw'ikorwa n'imiterere ya piezoelectric y'umusaruro wa nyuma.
Ubushakashatsi bwagaragaje ko uduce duto twa keramike twakozwe hakoreshejwe ifu ya barium titanate ifite ubunini bwa micron, submicron, na nano-sized bigaragaza itandukaniro rinini mu mikorere ya stereolithography (urugero, LCD-SLA). Uko ingano y'uduce tugabanuka, ubunini bw'uduce burushaho kwiyongera cyane, aho ifu ifite ubunini bwa nano-sized itanga uduce duto dufite ubunini bugera kuri miriyari za mPa·s. Uduce duto dufite ifu ifite ubunini bwa micron-sized dushobora gutandukana no gushishwa mu gihe cyo gucapa, mu gihe ifu ya submicron na nano-sized igaragaza imyitwarire ihamye yo gukora. Nyuma yo gushya cyane, ingero za keramike zavuyemo zageze ku bucucike bwa 5.44 g/cm³, coefficient ya piezoelectric (d₃₃) ya hafi 200 pC/N, hamwe n'ibihombo bike, bigaragaza imiterere myiza y'imikorere y'amashanyarazi.
Byongeye kandi, mu mikorere ya micro-stereolithography, guhindura ingano ikomeye y'udusimba two mu bwoko bwa PZT (urugero, 75 wt.%) byatanze imibiri ifite ubucucike bwa 7.35 g/cm³, bigeraho ingano ya piezoelectric igera kuri 600 pC/N munsi y'amashanyarazi akoreshwa mu gupima. Ubushakashatsi ku bijyanye no gupima imiterere y'udusimba duto twazamuye cyane uburyo bwo gukora neza, byongera ubuziranenge bwa geometrike kugeza kuri 80%.
Ubundi bushakashatsi bwakozwe ku byuma bya piezoelectric bya PMN-PT bwagaragaje ko imiterere y’ibintu bikomeye igira ingaruka zikomeye ku miterere ya ceramic n’imiterere y’amashanyarazi. Ku kigero cya 80% by’ibintu bikomeye, ibintu byagaragaye mu byuma byoroshye; uko ibintu bikomeye byagendaga byiyongera kugera kuri 82% no hejuru, ibintu byagiye bishira buhoro buhoro, kandi imiterere ya ceramic yarushijeho kuba myiza, hamwe n’imikorere myiza cyane. Ku kigero cya 82%, ibyuma byagaragaje imiterere myiza y’amashanyarazi: imiterere ya piezoelectric ya 730 pC/N, ubushobozi bwo kwemerera bwa 7226, n’igihombo cya dielectric cya 0.07 gusa.
Muri make, ingano y'uduce, ingano ikomeye y'ibice, n'imiterere ya rheological y'ibice bya ceramic ntibigira ingaruka gusa ku ituze n'ukuri kw'uburyo bwo gucapa, ahubwo binagena mu buryo butaziguye ubwinshi n'uburyo piezoelectric ikora ku bice bya sintered, bigatuma biba ibipimo by'ingenzi byo kugera ku bimera bya piezoelectric byacapwe mu buryo bwa 3D.
Uburyo bw'ingenzi bwo gucapa ingero za BT/UV muri LCD-SLA 3D
Imiterere y'ibibumbano bya PMN-PT bifite ibintu bikomeye bitandukanye
IV. Gutunganya Spark Plasma
Spark plasma sintering (SPS) ni ikoranabuhanga rigezweho ryo gushyushya rikoresha umuvuduko w’amashanyarazi n’umuvuduko wa mekanike bishyirwa icyarimwe ku ifu kugira ngo bigere ku kwiyongera vuba. Muri ubu buryo, umuvuduko w’amashanyarazi ushyushya ifu n’ifu, bigatanga ubushyuhe bwa Joule na plasma, bigatuma gushyushya neza mu gihe gito (ubusanzwe mu minota 10). Gushyushya vuba bitera gukwirakwira ku buso, mu gihe gusohora kw’imfu bifasha gukuraho imyuka yatewe n’ibice bya okiside ku buso bw’ifu, bikongera imikorere yo gushyushya. Ingaruka z’imigendekere y’amashanyarazi ziterwa n’imirima ya electromagnetic nazo zinongera gukwirakwira kwa atome.
Ugereranyije no gushyushya bisanzwe, SPS ikoresha ubushyuhe bwinshi, bigatuma ubushyuhe burushaho kwiyongera ku bushyuhe buri hasi mu gihe ikabuza gukura kw'ibinyampeke kugira ngo bibone imiterere mito kandi isa. Urugero:
- Hatabayeho inyongeramusaruro, hakoreshejwe ifu ya SiC yasenyutse nk'ibikoresho fatizo, gutwika kuri 2100°C na 70 MPa mu minota 30 byatanze ingero zifite ubucucike bwa 98%.
- Gusukura kuri 1700°C na 40 MPa mu minota 10 byatanze SiC cube ifite ubucucike bwa 98% n'ingano y'ibinyampeke ya 30–50 nm gusa.
- Gukoresha ifu ya SiC ya 80 µm granular no gusya kuri 1860°C na 50 MPa mu minota 5 byatumye SiC ceramics ikora neza cyane ifite ubucucike bwa 98.5%, Vickers microhardness ya 28.5 GPa, imbaraga zo gucikamo ibice za 395 MPa, n'ubukomere bwo gucikamo ibice bwa 4.5 MPa·m^1/2.
Isesengura ry’imiterere y’ibintu ryagaragaje ko uko ubushyuhe bwo gutwika ibintu bwiyongeraga kuva kuri 1600°C kugeza kuri 1860°C, ubwinshi bw’ibintu bwagabanutse cyane, bigera ku bucucike bwuzuye ku bushyuhe bwinshi.
Imiterere mito ya SiC ceramics yashyushye ku bushyuhe butandukanye: (A) 1600°C, (B) 1700°C, (C) 1790°C na (D) 1860°C
V. Inganda zikora inyongeramusaruro
Inganda zikora inyongeramusaruro (AM) ziherutse kugaragaza ubushobozi bunini mu gukora ibice bikomeye bya ceramic bitewe n'uburyo zikora urwego ku rundi. Ku bijyanye na ceramic za SiC, hakozwe ikoranabuhanga ritandukanye rya AM, ririmo icyuma gifunga (BJ), 3DP, icyuma gitandukanya laser (SLS), kwandika wino itaziguye (DIW), na stereolithography (SL, DLP). Ariko, 3DP na DIW bifite ubuziranenge buke, mu gihe SLS ikunda gutera ubushyuhe n'imivuniko. Mu buryo bunyuranye, BJ na SL bitanga inyungu nyinshi mu gukora ceramic zikomeye kandi zifite ubuziranenge buhanitse.
- Gushyiramo ibikoresho byo mu bwoko bwa Binder (BJ)
Ikoranabuhanga rya BJ rikubiyemo gutera ifu y’ibumba ku rundi ruhande, hanyuma hagakurikiraho gukuramo no gusya kugira ngo haboneke umusaruro wa nyuma wa ceramic. Guhuza BJ n’imyuka y’ubushyuhe (CVI), ceramics za SiC zifite ubuziranenge bwinshi kandi zikozwe muri crystalline zose zateguwe neza. Iyi gahunda ikubiyemo:
① Gukora imibiri y'icyatsi kibisi cya SiC hakoreshejwe BJ.
② Gucumba ukoresheje CVI kuri 1000°C na 200 Torr.
③ Ceramic ya nyuma ya SiC yari ifite ubucucike bwa 2.95 g/cm³, ubushobozi bwo gutwara ubushyuhe bwa 37 W/m·K, n'imbaraga zo kuzunguruka za 297 MPa.
Ishusho y'icyitegererezo cy'icapiro rya kole (BJ). (A) Ishusho y'igishushanyo mbonera gifashijwe na mudasobwa (CAD), (B) Ishusho y'icyitegererezo cy'ihame rya BJ, (C) icapiro rya SiC na BJ, (D) kwinjizwa kwa SiC mu mwuka w'ubushyuhe (CVI)
- Ishusho y'umuvuduko (SL)
SL ni ikoranabuhanga ryo gushushanya ibumba rishingiye ku mirasire ya UV rifite ubushobozi bwo gukora neza cyane kandi bugoye. Ubu buryo bukoresha uduce duto twa ceramic dushobora kwifotoza dufite imiterere ikomeye kandi dufite ubukana buke kugira ngo hakorwe imibiri y’icyatsi kibisi cya ceramic ya 3D binyuze muri photopolymerization, hagakurikiraho gukuramo uduce duto no gutwika ubushyuhe bwinshi kugira ngo haboneke umusaruro wa nyuma.
Hakoreshejwe ururenda rwa 35 vol.% SiC, hateguwe imirasire ya UV ya 405 nm kandi yongera kwiyongera binyuze mu gutwika polymer kuri 800°C no kuvurwa na PIP. Ibisubizo byagaragaje ko ingero zakozwe hakoreshejwe ururenda rwa 35 vol.% zageze ku bucucike bwa 84.8%, ziruta amatsinda yo kugenzura ya 30% na 40%.
Mu gushyiramo SiO₂ ikora lipophilic na phenolic epoxy resin (PEA) kugira ngo bihindure slurry, imikorere ya photopolymerization yarushijeho kuba myiza. Nyuma yo gutwika kuri 1600°C mu gihe cy'amasaha 4, habayeho guhindura SiC hafi ya yose, aho umwuka wa ogisijeni wa nyuma wa 0.12% gusa, bituma habaho intambwe imwe yo gukora SiC ceramics nziza kandi zifite imiterere igoye nta ntambwe zo kuyishyiramo cyangwa kuyishyiramo mbere yo kwinjira.
Ishusho y'imiterere y'icapiro n'uburyo rikorwa. Ishusho y'icyitegererezo nyuma yo kumisha kuri (A) 25°C, pyrolysis kuri (B) 1000°C, no gutwika kuri (C) 1600°C.
Mu gushushanya uduce duto twa Si₃N₄ two mu bwoko bwa ceramic two gucapa mu buryo bwa stereolithography 3D no gukoresha uburyo bwo gukuraho uduce duto two mu bwoko bwa debinding-presintering no gusaza mu bushyuhe bwinshi, hateguwe uduce twa Si₃N₄ dufite ubucucike bwa teoritiki bwa 93.3%, imbaraga zo gukurura za 279.8 MPa, n'imbaraga zo guhindagurika za 308.5–333.2 MPa. Ubushakashatsi bwagaragaje ko mu gihe cy'ibipimo bikomeye bya 45 vol.% n'igihe cyo kwigaragaza mu minota 10, hashobora kuboneka uduce tw'icyatsi kibisi dufite ubushobozi bwo gukaraba bw'urwego rwa IT77. Uburyo bwo gukuraho uduce duto dufite igipimo cyo gushyushya cya 0.1 °C/min bwafashije mu gutanga uduce tw'icyatsi kibisi tudapfa gucika.
Gusinya ni intambwe y'ingenzi igira ingaruka ku mikorere ya nyuma muri stereolithography. Ubushakashatsi bwerekana ko kongeramo ibikoresho byo gusinya bishobora kunoza neza ubucucike bwa ceramic n'imiterere ya mekanike. Hakoreshejwe CeO₂ nk'igikoresho cyo gusinya n'ikoranabuhanga rikoreshwa n'amashanyarazi mu gutegura ceramics zifite ubucucike bwinshi bwa Si₃N₄, CeO₂ byagaragaye ko itandukanya ku mbibi z'ingano, bigatuma umupaka w'ingano ugenda uhindagurika kandi urushaho kwiyongera. Ceramic zavuyemo zagaragaje ubukana bwa Vickers bwa HV10/10 (1347.9 ± 2.4) n'ubukomere bwo gucika bwa (6.57 ± 0.07) MPa·m¹/². Hamwe na MgO–Y₂O₃ nk'inyongera, homogeneity ya ceramic microstructure yararushijeho kuba nziza, yongera imikorere. Ku rwego rw'imiti ikoreshwa mu gusinya ya 8 wt.%, imbaraga zo guhindagurika no gutwara ubushyuhe byageze kuri 915.54 MPa na 59.58 W·m⁻¹·K⁻¹, uko bikurikirana.
VI. Umwanzuro
Muri make, ibikoresho bya silikoni karubide (SiC) bifite isuku nyinshi, nk'ibikoresho by'ubuhanga bya keramike, byagaragaje amahirwe menshi yo gukoreshwa mu bikoresho bya semiconductors, mu kirere, no mu bikoresho bigezweho. Iyi nyandiko yasesenguye ku buryo burambuye inzira eshanu zisanzwe zo gutegura ibikoresho bya silikoni bifite isuku nyinshi—guhindura imiterere y'icyuma gishyushya, gusohora icyuma gishyushya, gusohora plasma, no gukora inyongeramusaruro—hatangwa ibiganiro birambuye ku buryo bwo gukwirakwiza imiterere y'icyuma, kunoza imiterere y'ingenzi, imikorere y'ibikoresho, n'inyungu n'imbogamizi.
Biragaragara ko inzira zitandukanye buri imwe ifite imiterere yihariye mu bijyanye no kugera ku buziranenge buhanitse, ubucucike bwinshi, inyubako zigoye, no gukora neza mu nganda. By’umwihariko, ikoranabuhanga ryo gukora inyongeramusaruro ryagaragaje ubushobozi bukomeye mu gukora ibice bifite imiterere igoye kandi byihariye, hamwe n’iterambere mu bice bito nka stereolithography na binder jetting, bituma iba icyerekezo cy’ingenzi cy’iterambere mu gutegura ceramic ya SiC ifite ubuziranenge bwinshi.
Ubushakashatsi bw'ejo hazaza ku itegurwa rya SiC ceramic rifite isuku nyinshi bugomba gucukumbura mu buryo bwimbitse, bugateza imbere ihinduka riva ku rwego rwa laboratwari rijya ku rwego runini kandi rwizewe cyane mu buhanga, bityo bigatanga inkunga y'ibikoresho by'ingenzi mu gukora ibikoresho byo mu rwego rwo hejuru n'ikoranabuhanga rigezweho ry'amakuru.
XKH ni ikigo cy’ikoranabuhanga rigezweho cyihariye mu bushakashatsi no gukora ibikoresho bya ceramic bigezweho. Cyagenewe gutanga ibisubizo byihariye ku bakiriya mu buryo bwa silicon carbide (SiC) ceramics. Iyi sosiyete ifite ikoranabuhanga rigezweho ryo gutegura ibikoresho n’ubushobozi bwo gutunganya neza. Ubucuruzi bwayo bukubiyemo ubushakashatsi, gukora, gutunganya neza, no gutunganya hejuru ya ceramics za SiC zigezweho, byujuje ibisabwa bikomeye bya semiconductor, ingufu nshya, indege n’ibindi bice by’ibumba bigezweho. Dukoresheje uburyo bwo gusya bukuze n’ikoranabuhanga ryo gukora inyongeramusaruro, dushobora guha abakiriya serivisi imwe kuva ku gutunganya formula y’ibikoresho, gushyiraho imiterere igoye kugeza ku gutunganya neza, kwemeza ko ibicuruzwa bifite imiterere myiza ya mekanike, kudahungabana k’ubushyuhe no kurwanya ingese.
Igihe cyo kohereza: 30 Nyakanga-2025