Igice cya karubide cya silikoni kigabanyijemo ubwoko bwa semi-insulation n'ubwoko bwa conductive. Kuri ubu, imiterere rusange y'ibicuruzwa bya silikoni bya semi-insulated ni santimetero 4. Mu isoko rya silikoni rya karubide ritwara amashanyarazi, imiterere rusange y'ibicuruzwa bya substrate ni santimetero 6.
Bitewe n’ikoreshwa rya RF mu gice cya nyuma, ibikoresho bya SiC bifite ubushyuhe buciriritse n’ibikoresho bya epitaxial bigenzurwa n’ishami ry’ubucuruzi rya Amerika. SiC ifite ubushyuhe buciriritse nk’ibikoresho bya substrate ni byo bikunzwe cyane mu gukoresha GaN heteroepitaxy kandi bifite amahirwe menshi yo gukoresha muri mikoroonde. Ugereranyije n’ubushyuhe bukabije bwa safiro 14% na Si 16.9%, ubushyuhe bukabije bw’ibikoresho bya SiC na GaN ni 3.4% gusa. Hamwe n’ubushyuhe bwinshi bwa SiC, ibikoresho bya mikoroonde bifite ingufu nyinshi za LED na GaN bifite frequency yo hejuru n’imbaraga nyinshi byateguwe nabyo bifite inyungu nyinshi mu bikoresho bya radar, ibikoresho bya mikoroonde bifite ingufu nyinshi na sisitemu y’itumanaho ya 5G.
Ubushakashatsi n'iterambere rya substrate ya SiC ifite ubushyuhe buciriritse byagiye biba intego y'ubushakashatsi n'iterambere rya substrate ya SiC imwe ifite ubushyuhe buciriritse. Hari ingorane ebyiri zikomeye mu guhinga ibikoresho bya SiC bifite ubushyuhe buciriritse:
1) Kugabanya imyanda ituruka ku nyongeramusaruro ya N iterwa na grafiti crucible, ikoreshwa rya thermal insulation adsorbent na doping mu ifu;
2) Mu gihe cyo kugenzura ubwiza n'imiterere y'amashanyarazi ya kristu, hashyirwaho urwego rwo hagati rw'uburebure kugira ngo habeho ikoreshwa ry'amashanyarazi kugira ngo habeho isuku y'ibisigaye by'uburebure bw'ubutaka.
Kugeza ubu, inganda zifite ubushobozi bwo gukora SiC ifite ubwikorezi buciriritse ni SICC Co，Semisic Crystal Co，Tanke Blue Co, Hebei Synlight Crystal Co., Ltd.
Agakoresho ka SiC gatanga ingufu gakorwa binyuze mu gushyira azote mu kirere gikura. Substrate ya silicon carbide ikoreshwa cyane cyane mu gukora ibikoresho by'amashanyarazi, ibikoresho by'amashanyarazi bya silicon carbide bifite voltage nyinshi, umuriro mwinshi, ubushyuhe bwinshi, inshuro nyinshi, igihombo gito n'izindi nyungu zidasanzwe, bizamura cyane ikoreshwa ry'ibikoresho by'amashanyarazi bishingiye kuri silicon rikoreshwa mu guhindura ingufu neza, bigira ingaruka zikomeye kandi zikomeye ku bijyanye no guhindura ingufu neza. Ahantu hakoreshwa cyane ni imodoka zikoresha amashanyarazi/imigozi yo gusharija, ingufu nshya za photovoltaic, inzira ya gari ya moshi, ikoranabuhanga n'ibindi. Kubera ko inyuma y'ibicuruzwa bitanga ingufu ahanini ari ibikoresho by'amashanyarazi mu modoka zikoresha amashanyarazi, photovoltaic n'ahandi, amahirwe yo gukoresha ni menshi, kandi ababikora ni benshi cyane.
Ubwoko bwa kristalo ya silikoni karubide: Imiterere isanzwe ya kristalo ya silikoni karubide nziza ya 4H irashobora kugabanywamo ibice bibiri, kimwe ni kristalo ya silikoni karubide ya kristu ya sphalerite, izwi ku izina rya 3C-SiC cyangwa β-SiC, ikindi ni imiterere ya hexagonal cyangwa diyama y’imiterere ya period nini, isanzwe kuri 6H-SiC, 4H-sic, 15R-SiC, nibindi, byose hamwe bizwi ku izina rya α-SiC. 3C-SiC ifite akarusho ko kuba ifite ubushobozi bwo guhangana cyane n’ibikoresho biyikora. Ariko, kuba hari itandukaniro rinini hagati ya Si na SiC lattice constants hamwe na coefficients zo kwagura ubushyuhe bishobora gutera inenge nyinshi mu gice cya epitaxial cya 3C-SiC. 4H-SiC ifite ubushobozi bukomeye mu gukora MOSFET, kuko imikorere yayo yo gukura kwa kristalo no gukura kw'urwego rwa epitaxial ari myiza cyane, kandi ku bijyanye no kugenda kwa electron, 4H-SiC iri hejuru ya 3C-SiC na 6H-SiC, itanga imiterere myiza ya mikorobe kuri 4H-SiC MOSFET.
Niba hari icyaha, hamagara usiba
Igihe cyo kohereza: Nyakanga-16-2024