Ibikoresho bya Semiconductor byahindutse binyuze mubisekuru bitatu bihindura:
1st Gen (Si / Ge) yashyizeho urufatiro rwa elegitoroniki igezweho,
Icya 2 Gen (GaAs / InP) yaciyemo inzitizi za optoelectronic na frequency nyinshi zibuza ingufu impinduramatwara,
Itangiriro rya 3 (SiC / GaN) ubu rikemura ibibazo n’ibidukikije bikabije, bituma habaho kutabogama kwa karubone hamwe nigihe cya 6G.
Iri terambere ryerekana paradigm ihinduka kuva muburyo bwinshi ikajya mubuhanga mubumenyi bwibintu.
1. Semiconductor yo mu gisekuru cya mbere: Silicon (Si) na Germanium (Ge)
Amateka Yamateka
Mu 1947, Bell Labs yahimbye transistor ya germanium, iranga umuseke wibihe bya semiconductor. Mu myaka ya za 1950, silikoni yasimbuye buhoro buhoro germanium nk'ishingiro ry'imiyoboro ihuriweho (IC) bitewe na oxyde ihamye (SiO₂) hamwe n'ubutunzi bwinshi.
Ibikoresho
ⅠBandgap:
Ubudage: 0.67eV (bande yoroheje, ikunda kumeneka, imikorere mibi yubushyuhe bwo hejuru).
Silicon: 1.12eV (bandgap itaziguye, ibereye imiyoboro ya logique ariko idashobora gusohora urumuri).
Ⅱ、Ibyiza bya Silicon:
Mubisanzwe bigize okiside yo mu rwego rwo hejuru (SiO₂), ituma ibihimbano byinshi.
Igiciro gito kandi cyuzuye-isi (~ 28% yubutaka).
Ⅲ、Imipaka:
Ubushobozi buke bwa electron (cm 1500 gusa / (V · s)), bugabanya imikorere yumurongo mwinshi.
Intege nke za voltage / kwihanganira ubushyuhe (max ikora temp. ~ 150 ° C).
Ibyingenzi
Ⅰ、Inzira zuzuye (IC):
CPU, imashini yibuka (urugero, DRAM, NAND) yishingikiriza kuri silicon kugirango ihuze cyane.
Urugero: 4004 ya Intel (1971), microprocessor yambere yubucuruzi, yakoresheje tekinoroji ya silicon 10μm.
Ⅱ、Ibikoresho by'ingufu:
Thyristor yo hambere hamwe na MOSFETs nkeya (urugero, ibikoresho bya PC PC) byari bishingiye kuri silicon.
Ibibazo & Ubusaza
Germanium yagiye ikurwaho kubera kumeneka no guhungabana k'ubushyuhe. Nyamara, aho silikoni igarukira muri optoelectronics hamwe nimbaraga zikoresha imbaraga nyinshi byatumye habaho iterambere rya semiconductor ikurikira.
2Icyiciro cya kabiri-Igice cya kabiri: Gallium Arsenide (GaAs) na Fosifide Indium (InP)
Amajyambere
Mu myaka ya za 1970 - 1980, imirima igaragara nkitumanaho rya terefone igendanwa, imiyoboro ya fibre optique, hamwe n’ikoranabuhanga rya satelite byatumye hakenerwa cyane ibikoresho byifashishwa bya optoelectronic. Ibi byatumye habaho iterambere rya bande ya semiconductor nka GaAs na InP.
Ibikoresho
Bandgap & Optoelectronic Performance:
GaAs: 1.42eV (bandgap itaziguye, ituma imyuka isohoka-byiza kuri lazeri / LED).
InP: 1.34eV (ikwiranye neza na porogaramu ndende-ndende, urugero, itumanaho rya fibre optique 1550nm).
Imashini ya elegitoronike:
GaAs igera kuri 8500 cm² / (V · s), irenze kure silikoni (1500 cm² / (V · s)), bigatuma iba nziza yo gutunganya ibimenyetso bya GHz.
Ibibi
lGucamo ibice: Biragoye gukora kuruta silikoni; GaAs wafers igura 10 × birenze.
lNta oxyde kavukire: Bitandukanye na SiO₂ ya silicon, GaAs / InP ibura okiside ihamye, bikabuza guhimba IC cyane.
Ibyingenzi
lRF Imbere-Iherezo:
Imbaraga zigendanwa zigendanwa (PAs), imiyoboro ya satelite (urugero, transistors ya HEMT ishingiye kuri GaAs).
lOptoelectronics:
Diode ya Laser (CD / DVD drives), LED (umutuku / infragre), moderi ya fibre optique (InP laseri).
lIngirabuzimafatizo izuba:
Ingirabuzimafatizo za GaA zigera kuri 30% (v. ~ 20% kuri silicon), ingenzi kuri satelite.
lAmacupa ya tekinoroji
Ibiciro bihanitse bigarukira GaAs / InP kuri niche yohejuru yo murwego rwo hejuru, ikababuza kwimura silicon yiganje muri chip logic.
Igice cya gatatu-Igice cya Semiconductor (Broad-Bandgap Semiconductor): Caricon Carbide (SiC) na Gallium Nitride (GaN)
Abashoferi b'ikoranabuhanga
Impinduramatwara yingufu: Ibinyabiziga byamashanyarazi nibishobora kongera ingufu za gride bisaba ibikoresho byamashanyarazi bikora neza.
Ibikenewe cyane-Itumanaho: 5G itumanaho na sisitemu ya radar bisaba imirongo myinshi nubucucike bwimbaraga.
Ibidukikije bikabije: Ikirere hamwe ninganda zikoresha moteri zikenera ibikoresho bikeneye guhangana nubushyuhe burenga 200 ° C.
Ibiranga ibikoresho
Ibyiza bya Bandgap:
lSiC: Bandgap ya 3.26eV, gusenya amashanyarazi yumuriro imbaraga 10 × ya silicon, ishoboye kwihanganira voltage hejuru ya 10kV.
lGaN: Bandgap ya 3.4eV, moteri ya electron ya cm 2200 / (V · s), nziza cyane mumikorere yumurongo mwinshi.
Gucunga Ubushyuhe:
Amashanyarazi ya SiC agera kuri 4.9 W / (cm · K), akubye inshuro eshatu kurenza silikoni, bigatuma biba byiza mumashanyarazi menshi.
Ibibazo
SiC: Gutinda gukura buhoro buhoro bisaba ubushyuhe buri hejuru ya 2000 ° C, bikaviramo inenge ya wafer hamwe nigiciro kinini (wafer ya SiC ya santimetero 6 ni 20 × ihenze kuruta silikoni).
GaN: Kubura insimburangingo isanzwe, akenshi bisaba heteroepitaxy kuri safiro, SiC, cyangwa silicon substrate, biganisha kubibazo bidahuye.
Ibyingenzi
Amashanyarazi:
EV inverters (urugero, Tesla Model 3 ikoresha SiC MOSFETs, itezimbere imikorere ya 5-10%).
Sitasiyo yihuta / adaptateur (ibikoresho bya GaN bituma 100W + yishyurwa byihuse mugihe bigabanya ubunini bwa 50%).
Ibikoresho bya RF:
5G base base power amplifier (GaN-kuri-SiC PAs ishyigikira mmWave frequency).
Radar ya gisirikare (GaN itanga 5 ension ubucucike bwa GaAs).
Optoelectronics:
UV LEDs (ibikoresho bya AlGaN bikoreshwa muguhagarika no kumenya neza amazi).
Imiterere yinganda hamwe nigihe kizaza
SiC yiganje ku isoko rifite ingufu nyinshi, hamwe na moderi yo mu rwego rwo hejuru yamaze gukora cyane, nubwo ibiciro bikomeza kuba inzitizi.
GaN irimo kwaguka byihuse mubikoresho bya elegitoroniki byabaguzi (kwishyuza byihuse) hamwe na porogaramu ya RF, ihinduka yerekeza kuri waferi 8.
Ibikoresho bivuka nka gallium oxyde (Ga₂O₃, bandgap 4.8eV) na diyama (5.5eV) birashobora gukora "igisekuru cya kane" cya semiconductor, bigatuma imbaraga za voltage zirenga 20kV.
Kubana no Guhuza Ibisekuru bya Semiconductor
Kwuzuzanya, Ntabwo ari ugusimburwa:
Silicon ikomeje kwiganza muri chip chipique hamwe na elegitoroniki y'abaguzi (95% by'isoko rya semiconductor ku isi).
GaAs na InP kabuhariwe muri nic-frequency nyinshi na optoelectronic niches.
SiC / GaN ntisimburwa mu mbaraga no gukoresha inganda.
Ingero zo Guhuza Ikoranabuhanga:
GaN-kuri-Si: Ihuza GaN hamwe na silicon ihendutse ya substrate yo kwishyuza byihuse hamwe na progaramu ya RF.
SiC-IGBT Hybrid modules: Kunoza imikorere ya gride.
Ibizaza:
Kwishyira hamwe kwa Heterogene: Guhuza ibikoresho (urugero, Si + GaN) kuri chip imwe kugirango uhuze imikorere nigiciro.
Ibikoresho byinshi cyane (urugero, Ga₂O₃, diyama) birashobora gutuma ultra-high-voltage (> 20kV) hamwe na comptabilite yo kubara.
Umusaruro ujyanye
GaAs laser epitaxial wafer 4 inch 6 cm
12 cm
Igihe cyo kohereza: Gicurasi-07-2025