1. Intangiriro
Nubwo hashize imyaka ibarirwa muri za mirongo ubushakashatsi, heteroepitaxial 3C-SiC ihingwa kuri sisitemu ya silicon itaragera ku bwiza buhagije bwo gukoresha ibikoresho bya elegitoroniki. Gukura mubisanzwe bikorwa kuri Si (100) cyangwa Si (111), buri kimwe kigaragaza imbogamizi zitandukanye: anti-phase domaine kuri (100) no gucamo (111). Mugihe [111] -yerekanwe na firime yerekana ibintu bitanga icyizere nko kugabanya ubucucike bwinenge, kunoza imiterere yimiterere yimiterere, hamwe no guhangayika hasi, ubundi buryo nka (110) na (211) buracyari buke. Amakuru ariho yerekana ko uburyo bwiza bwo gukura bushobora kuba icyerekezo cyihariye, bigoye iperereza rifatika. Ikigaragara ni uko ikoreshwa rya Miller-indangagaciro ya Si (urugero, (311), (510)) kuri 3C-SiC heteroepitaxy ntabwo yigeze itangazwa, hasigara umwanya munini wubushakashatsi bwubushakashatsi ku buryo bwo gukura bushingiye ku cyerekezo.
2. Ubushakashatsi
Ibice 3C-SiC byashyizwe hakoreshejwe imyuka ihumanya ikirere (CVD) ikoresheje imyuka ya SiH4 / C3H8 / H2. Substrates yari cm 1 wa wafers ifite icyerekezo gitandukanye: (100), (111), (110), (211), (311), (331), (510), (553), na (995). Substrates zose zari kuri axis usibye (100), aho wasuzumwe 2 ° waferi yaciwe. Isuku mbere yo gukura harimo kugabanuka kwa ultrasonic muri methanol. Gukura protocole kwarimo gukuramo okiside kavukire binyuze muri H2 annealing kuri 1000 ° C, hagakurikiraho inzira isanzwe yintambwe ebyiri: carburisation muminota 10 kuri 1165 ° C hamwe na 12 sccm C3H8, hanyuma epitaxy muminota 60 kuri 1350 ° C (C / Si ratio = 4) ukoresheje 1.5 sccm SiH4 na 2 sccm C3H8. Buri terambere ryakuze ryarimo Si kugeza kuri eshanu zitandukanye zitandukanye, hamwe byibura wafer (100).
3. Ibisubizo n'ibiganiro
Imiterere yimiterere ya 3C-SiC ikura kumasoko atandukanye ya Si (Igishusho 1) yerekanaga imiterere yubuso butandukanye hamwe nuburakari. Mubyerekanwe, ingero zahinzwe kuri Si (100), (211), (311), (553), na (995) zagaragaye nkindorerwamo, mugihe izindi ziva kumata ((331), (510)) kugeza zijimye ((110), (111)). Ubuso bworoshye cyane (bwerekana microstructure nziza) bwabonetse kuri (100) 2 ° kuri na (995). Igitangaje, ibyiciro byose byakomeje kutavunika nyuma yo gukonja, harimo mubisanzwe bikunda guhangayika 3C-SiC (111). Ingano ntangarugero ntarengwa ishobora kuba yararinze gucika, nubwo ingero zimwe na zimwe zerekanaga kunama (30-60 μ mm gutandukana kuva hagati kugera ku nkombe) kugaragara munsi ya microscopi optique kuri 1000 × gukuza bitewe nubushyuhe bukabije bwumuriro. Ibice byunamye cyane byahinzwe kuri Si (111), (211), na (553) byerekanaga imiterere ifatika yerekana imiterere iremereye, bisaba ko hakorwa ubundi bushakashatsi nubushakashatsi bujyanye nicyerekezo cya kristu.
Igishushanyo cya 1 cyerekana muri make XRD na AFM (gusikana kuri 20 × 20 μ m2) ibisubizo byibice 3C-SC byakuze kuri Si substrate ifite icyerekezo gitandukanye.
Imbaraga za kirimbuzi microscopi (AFM) amashusho (Igishusho 2) yemeje optique yo kureba. Imizi-isobanura-kare (RMS) indangagaciro zemeje ubuso bworoshye kuri (100) 2 ° kuri na (995) substrate, hagaragaramo imiterere isa nintete ifite 400-800 nm zingana. (110) -icyiciro cyakuze nicyo cyari gikaze, mugihe kirekire kandi / cyangwa ibisa nibintu bifite imbibi zikarishye byagaragaye mubindi byerekezo ((331), (510)). Gutandukanya X-ray (XRD) θ-2θ scan (mu ncamake mu mbonerahamwe ya 1) byagaragaje ko heteroepitaxy igenda neza kuri substrate yo munsi ya Miller-indangagaciro, usibye Si (110) yerekanaga imvange ya 3C-SiC (111) na (110) yerekana polycristaline. Icyerekezo cyo kuvanga icyerekezo cyatangajwe mbere kuri Si (110), nubwo ubushakashatsi bumwe bwerekanye ko bwihariye (111) bwerekanwe na 3C-SiC, byerekana ko iterambere ryimiterere ari ngombwa. Ku bipimo bya Miller ≥5 ((510), (553), (995)), nta mpinga ya XRD yagaragaye mu buryo busanzwe θ-2θ kubera ko izo ndege zerekana indangagaciro zidatandukanye muri iyi geometrie. Kubura kw'ibipimo byo hasi 3C-SiC (urugero, (111), (200)) byerekana gukura kwa kristu imwe, bisaba ko hajyaho icyitegererezo kugirango hamenyekane itandukaniro riva mu ndege nkeya.
Igishushanyo cya 2 cyerekana kubara kwinguni yindege muburyo bwa CFC.
Ingero zabazwe za kristu zerekana hagati yindege-ndende nindege ntoya (Imbonerahamwe 2) yerekanaga ibitagenda neza (> 10 °), isobanura ko idahari muri scan θ-2θ scan. Isesengura ryibishushanyo mbonera rero ryakozwe kuri (995) -icyerekezo cyerekanwe kubera imiterere idasanzwe ya granulaire (ishobora guturuka kumikurire yinkingi cyangwa impanga) hamwe nuburakari buke. Imibare (111) ya pole (Igishusho 3) iva muri substrate ya Si na 3C-SiC yari imwe, yemeza ko gukura kwa epitaxial nta mpanga. Umwanya wo hagati wagaragaye kuri χ≈15 °, uhuza na theoretical (111) - (995). Ibibanza bitatu bihwanye neza byagaragaye ahantu hateganijwe (χ = 56.2 ° / φ = 269.4 °, χ = 79 ° / φ = 146.7 ° na 33,6 °), nubwo ahantu hakeye hateganijwe kuri χ = 62 ° / φ = 93.3 ° bisaba ko hakorwa iperereza rindi. Ubwiza bwa kristalline, busuzumwa hifashishijwe ubugari bwikibanza muri φ-scan, bigaragara ko butanga icyizere, nubwo ibipimo byo gutondeka umurongo bikenerwa mukugereranya. Imibare ya pole ya (510) na (553) ntangarugero iracyarangiye kugirango hemezwe imiterere yibitekerezo byabo.
Igishushanyo cya 3 cyerekana igishushanyo mbonera cya XRD cyanditswe kuri sample (995) yerekanwe, yerekana indege (111) zindege ya Si substrate (a) hamwe na 3C-SiC (b).
4. Umwanzuro
Iterambere rya Heteroepitaxial 3C-SiC ryatsindiye ku cyerekezo kinini cya Si usibye (110), cyatanze ibikoresho bya polyikristaline. Si (100) 2 ° kuri na (995) substrate yabyaye ibice byoroshye (RMS <1 nm), mugihe (111), (211), na (553) byagaragaje kunama gukomeye (30-60 μ m). Indangantego-ndende isaba XRD igezweho (urugero, imibare ya pole) kugirango yemeze epitaxy kubera impinga θ-2θ idahari. Imirimo ikomeje ikubiyemo ibipimo byo gutondeka umurongo, isesengura ryimyitwarire ya Raman, no kwaguka kubindi byerekezo-byo hejuru kugirango urangize ubu bushakashatsi.
Nkuruganda ruhagaritse, XKH itanga serivise zumwuga zitunganijwe hamwe na portfolio yuzuye ya silicon karbide substrate, itanga ubwoko busanzwe kandi bwihariye burimo 4H / 6H-N, 4H-Semi, 4H / 6H-P, na 3C-SiC, iboneka mumurambararo kuva kuri santimetero 2 kugeza kuri 12. Ubuhanga bwacu bwanyuma kugeza ku ndunduro mu mikurire ya kristu, gutunganya neza, hamwe nubwishingizi bufite ireme butanga ibisubizo byihariye kubikoresho bya elegitoroniki, RF, nibisabwa bigenda bigaragara.
Igihe cyo kohereza: Kanama-08-2025