1. Intangiriro
Nubwo hari ubushakashatsi bwakozwe mu myaka myinshi, heteroepitaxial 3C-SiC ihingwa ku bikoresho bya silikoni ntabwo iragera ku bwiza buhagije bwa kristale mu bikorwa by'ikoranabuhanga mu nganda. Ubusanzwe gukura bikorwa ku bikoresho bya Si (100) cyangwa Si (111), buri kimwe gitanga imbogamizi zitandukanye: uturere turwanya icyiciro cya (100) no gucikamo ibice bya (111). Nubwo filime zishingiye ku [111] zigaragaza imiterere myiza nko kugabanuka k'ubucucike bw'ibisebe, kunoza imiterere y'ubuso, no kugabanuka k'umuvuduko, ubundi buryo bwo kureba nka (110) na (211) buracyari munsi y'inyigo. Amakuru ariho agaragaza ko imiterere myiza yo gukura ishobora kuba ishingiye ku cyerekezo, ikagorana iperereza rikorwa. Ikigaragara ni uko ikoreshwa rya substrates za Si zo mu bwoko bwa Miller-index (urugero, (311), (510)) kuri heteroepitaxy ya 3C-SiC ritigeze ritangazwa, bigatuma hasigara umwanya munini wo gukora ubushakashatsi ku buryo bwo gukura bushingiye ku cyerekezo.
2. Igerageza
Uduce twa 3C-SiC twashyizwe mu buryo bunyuze mu gusiga umwuka w’umwuka ushyushye w’ikirere (CVD) hakoreshejwe imyuka ibanza ya SiH4/C3H8/H2. Uduce twa 1 cm² twa Si wafers dufite icyerekezo gitandukanye: (100), (111), (110), (211), (311), (331), (510), (553), na (995). Uduce twose twari ku murongo umwe uretse (100), aho utwo duce twaciweho 2° twongeye kugeragezwa. Gusukura mbere yo gukura byasabaga gukuraho amavuta ya methanol hakoreshejwe ikoranabuhanga. Gahunda yo gukura yari ikubiyemo gukuraho okiside gakondo binyuze mu gushyushya H2 kuri 1000°C, hagakurikiraho inzira isanzwe y’intambwe ebyiri: gukaraba mu minota 10 kuri 1165°C hamwe na 12 sccm C3H8, hanyuma epitaxy mu minota 60 kuri 1350°C (C/Si ratio = 4) hakoreshejwe 1.5 sccm SiH4 na 2 sccm C3H8. Buri cyiciro cy’ikura cyabaga gifite icyerekezo cya Si kine kugeza kuri eshanu zitandukanye, gifite nibura wafer imwe (100) y’icyitegererezo.
3. Ibisubizo n'ibiganiro
Imiterere y'imiterere y'ibice bya 3C-SiC byakuriye ku bice bitandukanye bya Si (Ishusho ya 1) byagaragaje imiterere itandukanye y'ubuso n'ubukana. Mu buryo bugaragara, ingero zakuriye kuri Si (100), (211), (311), (553), na (995) zasaga n'indorerwamo, mu gihe izindi zari zisa n'amata ((331), (510)) kugeza ku zijimye ((110), (111)). Ubuso bworoshye cyane (bugaragaza imiterere myiza) bwabonetse ku bice bya (100) 2° na (995). Igitangaje ni uko ibice byose byagumye bidafite amasasu nyuma yo gukonja, harimo n'ibisanzwe bishobora gutera stress 3C-SiC (111). Ingano nto y'ingero ishobora kuba yarabujije gucika, nubwo bimwe mu byiciro byagaragaje ko binamye (30-60 μm kuva hagati kugera ku nkengero) bishobora kugaragara hifashishijwe mikorosikope y'urumuri kuri 1000× magnification bitewe n'ubushyuhe bwinshi. Uduce twakuwe ku duce twa Si (111), (211), na (553) twerekanye imiterere y’inyuma igaragaza imbaraga zo gukurura, bisaba ubundi bushakashatsi n’ubushakashatsi kugira ngo bihuze n’icyerekezo cya kristalografiya.
Ishusho ya 1 igaragaza muri make ibyavuye muri XRD na AFM (gusesengura kuri 20×20 μ m2) by’imiterere ya 3C-SC yakuwe kuri substrates za Si zifite icyerekezo gitandukanye.
Amashusho ya mikorosikopi y’imbaraga za atomiki (AFM) (Ishusho ya 2) yemeje ibyo umuntu yarebye. Agaciro k’umuzi-kare (RMS) kemeje ubuso bworoshye cyane ku duce twa (100) 2° kure na (995), dufite imiterere isa n’iy’ibinyampeke ifite ingano ya 400-800 nm ku ruhande. Urusobe rwa (110) rwakuze nirwo rwari rukaze cyane, mu gihe imiterere miremire cyangwa/cyangwa ijyanye n’aho hari imipaka ikarishye rimwe na rimwe yagaragaye mu zindi nzira ((331), (510)). Gupima X-ray diffraction (XRD) θ-2θ (byasobanuwe mu mbonerahamwe ya 1) byagaragaje heteroepitaxy nziza ku duce twa Miller-index yo hasi, usibye Si (110) yagaragaje imisozi ivanze ya 3C-SiC (111) na (110) igaragaza polycrystallinity. Uku kuvanga imiterere byavuzwe mbere kuri Si (110), nubwo hari ubushakashatsi bwagaragaje ko 3C-SiC yihariye (111) ishingiye ku miterere y’imikurire ari ingenzi cyane. Ku bipimo bya Miller ≥5 ((510), (553), (995)), nta misozo ya XRD yabonetse mu miterere isanzwe ya θ-2θ kubera ko izi misozo zifite index nini zidahindagurika muri ubu buryo. Kuba nta misozo ifite index 3C-SiC ifite index nto (urugero, (111), (200)) bigaragaza ko ikura rya crystalline imwe, bisaba ingero zihindagurika kugira ngo hamenyekane diffraction iturutse ku misozo ifite index nto.
Ishusho ya 2 igaragaza uko inguni y’ikirere iri mu miterere ya kristu ya CFC iteye.
Inguni za kristalografiya zabazwe hagati y’imiterere y’inyuma n’iy’inyuma (Imbonerahamwe ya 2) zagaragaje imiterere mibi (>10°), zisobanura ko zitagaragara muri scan zisanzwe za θ-2θ. Bityo, isesengura ry’imibare y’inyuma ryakozwe ku rugero rwa (995) bitewe n’imiterere yarwo idasanzwe y’inyuma (ishobora kuba iturutse ku mikurire cyangwa kwihuza) n’ubukana buke. Imibare ya (111) y’inyuma (Ishusho ya 3) yo muri substrate ya Si n’urwego rwa 3C-SiC yari hafi gusa, yemeza ko imikurire ya epitaxial idahuye. Ahantu hagati hagaragaye kuri χ≈15°, bihuye n’inguni ya teyori (111)-(995). Ahantu hatatu hangana na symmetry hagaragaye ku myanya yari yitezwe (χ=56.2°/φ=269.4°, χ=79°/φ=146.7° na 33.6°), nubwo ahantu hadasobanutse neza kuri χ=62°/φ=93.3° bisaba iperereza ryinshi. Ubwiza bwa kristale, bwapimwe hakoreshejwe ubugari bw'ahantu muri φ-scans, busa n'aho butanga icyizere, nubwo hakenewe gupima curve yo gupima. Imibare y'ibice bya (510) na (553) iracyari ngombwa ko yuzura kugira ngo hemezwe imiterere yabyo ifatwa nk'iya epitaxial.
Ishusho ya 3 igaragaza igishushanyo mbonera cya XRD cyanditswe ku rugero rwa (995) rwerekana imiterere ya (111) ya Si substrate (a) n'urwego rwa 3C-SiC (b).
4. Umwanzuro
Iterambere rya Heteroepitaxial 3C-SiC ryatsinze ku miterere myinshi ya Si uretse (110), yatangaga ibikoresho bya polycrystalline. Si (100) 2° ku ruhande na (995) substrates byatanze urwego rworoshye cyane (RMS <1 nm), mu gihe (111), (211), na (553) byagaragaje ko binamye cyane (30-60 μm). Substrates zifite index nyinshi zisaba isuzuma rya XRD rigezweho (urugero, amashusho ya pole) kugira ngo zemeze epitaxy bitewe n'uko nta misozo ya θ-2θ ihari. Akazi gakomeje karimo gupima curve, isesengura rya Raman stress, no kwagura imiterere y'inyongera ifite index nyinshi kugira ngo urangize ubu bushakashatsi.
Nk’inganda ikora ibikoresho bikozwe mu buryo bugororotse, XKH itanga serivisi z’ubuhanga mu gutunganya ibikoresho hifashishijwe ikoranabuhanga rigezweho, ifite ubwoko busanzwe bwa silicon carbide, itanga ubwoko busanzwe n’ubudasanzwe burimo 4H/6H-N, 4H-Semi, 4H/6H-P, na 3C-SiC, iboneka mu bugari kuva kuri santimetero 2 kugeza kuri santimetero 12. Ubuhanga bwacu mu gukura kwa kristalo, gutunganya neza ibikoresho, no kugenzura ubuziranenge butuma habaho ibisubizo byihariye ku bikoresho by’ikoranabuhanga, RF, n’ibindi bikoresho bishya.
Igihe cyo kohereza: Kanama-08-2025