Carbide ya Silicon (SiC) ntabwo ari ikoranabuhanga rikomeye mu kurinda igihugu gusa ahubwo ni ibikoresho by'ingenzi mu nganda z’imodoka n’ingufu ku isi. Nintambwe yambere yingenzi muri SiC imwe-itunganijwe, gukata wafer bigena neza ubwiza bwo kunanuka no gusya. Uburyo bwa gakondo bwo gutema bukunze kumenyekanisha ibice byubutaka nubutaka, byongera igipimo cyo kumena wafer nigiciro cyo gukora. Kubwibyo, kugenzura ibyangiritse hejuru ni ngombwa mugutezimbere ibikoresho bya SiC.
Kugeza ubu, gukata SiC ingot ihura nibibazo bibiri byingenzi:
- Gutakaza ibintu byinshi mumashanyarazi gakondo:Ubukomere bukabije bwa SiC nubugome butuma bikunda guturika no guturika mugihe cyo gukata, gusya, no gusya. Dukurikije amakuru ya Infineon, gakondo isubiranamo ya diyama-resin ihujwe n’insinga nyinshi zigera ku 50% gusa mu gukoresha ibikoresho mu gutema, hamwe n’igihombo kimwe cya wafer kigera kuri ~ 250 mm nyuma yo gusiga, hasigara ibikoresho bike byakoreshwa.
- Imikorere mike hamwe nigihe kirekire cyumusaruro:Imibare mpuzamahanga y’umusaruro yerekana ko gukora wafer 10,000 ukoresheje amasaha 24 uhoraho wogukoresha insinga bifata iminsi ~ 273. Ubu buryo busaba ibikoresho byinshi nibikoreshwa mugihe bibyara hejuru cyane kandi byanduye (umukungugu, amazi mabi).
Kugira ngo ibyo bibazo bikemuke, itsinda rya Porofeseri Xiu Xiangqian muri kaminuza ya Nanjing ryateje imbere ibikoresho byo gukata lazeri neza cyane bya SiC, bifashisha ikoranabuhanga rya ultrafast kugira ngo rigabanye inenge kandi ryongere umusaruro. Kuri 20 mm ya SiC ingot, tekinoroji ikubye kabiri umusaruro wafer ugereranije no kubona insinga gakondo. Byongeye kandi, wafer yacaguwe na lazeri yerekana uburinganire bwa geometrike isumba iyindi, ituma igabanuka ryubugari kugera kuri 200 mkm kuri wafer kandi bikongera umusaruro.
Inyungu z'ingenzi:
- Byuzuye R&D kubikoresho binini bya prototype, byemewe gukata waferi ya SiC ya santimetero 4-6 hamwe na SiC ya insimburangingo ya 6.
- Gukata ingimetero 8 za ingot biri kugenzurwa.
- Ikigaragara ni igihe gito cyo gutema, umusaruro mwinshi wumwaka, hamwe na> 50% kuzamura umusaruro.
XCH ya SiC substrate yubwoko 4H-N
Ubushobozi bw'isoko:
Ibi bikoresho byiteguye kuba igisubizo cyibanze cyo gukata ingero ya santimetero 8 za SiC, kugeza ubu yiganjemo ibicuruzwa biva mu Buyapani bitumizwa mu mahanga hamwe n’ibiciro byinshi kandi bibuza kohereza ibicuruzwa hanze. Imbere mu gihugu ibikoresho byo gukata / kunanura ibikoresho birenga 1.000, nyamara nta bundi buryo bukuze bwakozwe nabashinwa bubaho. Ikoranabuhanga rya kaminuza ya Nanjing rifite agaciro gakomeye ku isoko n’ubushobozi bw’ubukungu.
Guhuza Ibikoresho byinshi:
Kurenga SiC, ibikoresho bifasha gutunganya lazeri ya nitride ya gallium (GaN), oxyde ya aluminium (Al₂O₃), na diyama, ikagura inganda zayo.
Muguhindura uburyo bwo gutunganya wafer ya SiC, ubu bushya bukemura ibibazo bikomeye mubikorwa bya semiconductor mugihe bihuza nisi yose igana ku bikoresho bikora neza, bikoresha ingufu.
Umwanzuro
Nkumuyobozi winganda mubikorwa bya silicon karbide (SiC), substrate, XKH kabuhariwe mugutanga insimburangingo ya santimetero 2-12 zuzuye za SiC (harimo 4H-N / SEMI, ubwoko bwa 4H / 6H / 3C) zahujwe ninganda zikura cyane nkibinyabiziga bishya byingufu (NEVs), kubika ingufu za Photovoltaque (PV), hamwe n’itumanaho rya 5G. Twifashishije tekinoroji nini ya wafer igabanya igihombo gito hamwe nubuhanga bwo gutunganya neza, twageze ku musaruro mwinshi wa substrate ya santimetero 8 hamwe niterambere mu buhanga bwa tekinoroji ya sisitemu yo gukura ya SiC ya santimetero 12, kugabanya cyane ibiciro bya chip kuri buri gice. Tujya imbere, tuzakomeza kunonosora ingot-urwego rwa lazeri yo gukata hamwe nuburyo bwo kugenzura ibibazo byubwenge kugirango tuzamure umusaruro wa santimetero 12 kuri substrate kurwego rwisi yose, duha imbaraga inganda zo mu gihugu SiC zo guca monopoliya mpuzamahanga no kwihutisha porogaramu nini murwego rwohejuru nka chip yo mu rwego rwo hejuru rwimodoka hamwe na seriveri ya AI itanga amashanyarazi.
XCH ya SiC substrate yubwoko 4H-N
Igihe cyo kohereza: Kanama-15-2025