Ibyingenzi Byingenzi Kubyiza-Byiza bya Silicon Carbide Itegura Crystal

Uburyo nyamukuru bwo gutegura silikoni imwe yo gutegura kristu harimo: Gutwara Imyuka Yumubiri (PVT), Gukura-Imbuto Yumuti wo hejuru (TSSG), hamwe nubushyuhe bwo hejuru bwa Temperature (HT-CVD). Muri ibyo, uburyo bwa PVT bukoreshwa cyane mubikorwa byinganda kubera ibikoresho byoroshye, kuborohereza kugenzura, nibikoresho bike nibiciro byakazi.

Ingingo z'ingenzi za tekinike zo gukura kwa PVT ya Silicon Carbide Crystal

Iyo ukura silicon karbide kristal ukoresheje uburyo bwa Vapor Transport (PVT), hagomba gutekerezwa ibintu bya tekiniki bikurikira:

1. Isuku ryibikoresho bya Graphite mu rugereko rwikura: Ibirimo umwanda mubice bya grafite bigomba kuba munsi ya 5 × 10⁻⁶, mugihe ibyanduye byanduye bigomba kuba munsi ya 10 × 10⁻⁶. Ibintu nka B na Al bigomba kubikwa munsi ya 0.1 × 10⁻⁶.
2. Guhitamo imbuto nziza ya Crystal Polarity Guhitamo: Ubushakashatsi bufatika bwerekana ko isura ya C (0001) ikwiranye no gukura kristu ya 4H-SiC, mugihe isura ya Si (0001) ikoreshwa mugukura kristu ya 6H-SiC.
3. Gukoresha Imbuto ya Off-Axis Crystal: Hanze ya kristu yimbuto ya axis irashobora guhindura uburinganire bwikura rya kristu, bikagabanya inenge muri kristu.
4. Imbuto nziza-nziza yo korohereza uburyo.
5. Kugumana Iterambere ryimikurire ya Crystal mugihe cyo gukura.

Ikoranabuhanga ryingenzi kuri Silicon Carbide Gukura kwa Crystal

1. Doping Technology ya Silicon Carbide Ifu
   Kureka ifu ya karibide ya silicon hamwe na Ce ikwiye irashobora guhagarika imikurire ya kristu imwe ya 4H-SiC. Ibisubizo bifatika byerekana ko Ce doping ishobora:

• Ongera umuvuduko wubwiyongere bwa silicon karbide kristal.
• Igenzura icyerekezo cyo gukura kwa kristu, bigatuma irushaho kuba imwe kandi isanzwe.
• Kurwanya ihumana, kugabanya inenge no koroshya umusaruro wa kirisiti imwe kandi nziza cyane.
• Irinde kwangirika kwinyuma ya kristu kandi utezimbere umusaruro umwe-kristu.

• Axial na Radial Temperature Gradient Igenzura Ikoranabuhanga
  Ubushyuhe bwa axial buhoro buhoro bugira ingaruka muburyo bwo gukura kwa kristu no gukora neza. Ubushyuhe buke bukabije burashobora gutuma habaho polycristaline kandi bikagabanya umuvuduko witerambere. Ubushyuhe bukwiye bwa axial na radial byorohereza imikurire ya SiC yihuta mugihe gikomeza ubuziranenge bwa kirisiti.
• Ikoreshwa ryindege Yibanze (BPD) Ikoranabuhanga
  Ubusembwa bwa BPD buturuka cyane cyane mugihe impagarara zogosha muri kristu zirenze impungenge zikomeye za SiC, zikora sisitemu yo kunyerera. Kubera ko BPD itandukanijwe nicyerekezo cyo gukura kwa kristu, ikora cyane cyane mugihe cyo gukura no gukonja.
• Umuyaga Icyiciro Ibigize Ikigereranyo cyo Guhindura Ikoranabuhanga
  Kongera igipimo cya karuboni-kuri-silikoni mubidukikije bikura ni igipimo cyiza cyo guhagarika imikurire imwe. Umubare munini wa karuboni-kuri-silikoni ugabanya intambwe nini yo guterana, ukabika amakuru yo gukura kwimbuto za kirisiti, kandi ugahagarika imiterere ya polytype.
• Ikoreshwa rya tekinoroji yo kugenzura
  Guhangayikishwa no gukura kwa kirisiti birashobora gutera kugonda indege za kirisiti, biganisha ku bwiza bwa kirisiti cyangwa no gucika. Guhangayikishwa cyane kandi byongera indege yibanze, bishobora kugira ingaruka mbi kurwego rwiza rwa epitaxial.

Ishusho ya 6-ya SiC wafer yogusikana

Uburyo bwo Kugabanya Stress muri Crystal:

• Hindura ubushyuhe bwumurima ukwirakwizwa hamwe nuburyo bwo gutunganya kugirango ushoboze gukura-kuringaniza gukura kwa SiC kristu imwe.
• Hindura uburyo bukomeye kugirango wemererwe gukura kubuntu hamwe nimbogamizi nkeya.
• Hindura uburyo bwo gutondekanya imbuto za kristu kugirango ugabanye kwagura ubushyuhe budahuye hagati yimbuto ya kirisiti na grafite. Uburyo busanzwe nugusiga icyuho cya mm 2 hagati yimbuto ya kristu na grafite.
• Kunoza inzira ya annealing ushyira mubikorwa itanura rya feri, uhindura ubushyuhe bwa annealing hamwe nigihe cyo kurekura byimazeyo imihangayiko yimbere.

Ibizaza muri Silicon Carbide Crystal Gukura Ikoranabuhanga

Urebye imbere, tekinoroji yo mu rwego rwo hejuru ya SiC imwe yo gutegura ikoranabuhanga izatera imbere mu byerekezo bikurikira:

1. Gukura Kinini
   Diameter ya silicon karbide kristu imwe yahindutse kuva kuri milimetero nkeya kugera kuri santimetero 6, santimetero 8, ndetse nini nini ya 12. Kirisiti nini ya diametre ya SiC itezimbere umusaruro, igabanya ibiciro, kandi yujuje ibyifuzo byibikoresho bifite ingufu nyinshi.
2. Iterambere ryiza
   Hejuru-nziza ya SiC imwe ya kristu ni ngombwa kubikoresho bikora cyane. Nubwo hari intambwe igaragara imaze guterwa, inenge nka micropipes, dislocations, hamwe n’umwanda biracyahari, bigira ingaruka kumikorere yibikoresho no kwizerwa.
3. Kugabanya ibiciro
   Igiciro kinini cya SiC kristal itegura kugabanya ikoreshwa ryayo mubice bimwe. Kunoza imikorere yiterambere, kuzamura umusaruro, no kugabanya ibiciro byibanze bishobora gufasha kugabanya umusaruro.
4. Gukura kwubwenge
   Hamwe niterambere muri AI hamwe namakuru makuru, tekinoroji yo gukura ya SiC izarushaho gufata ibisubizo byubwenge. Kugenzura-igihe-nyacyo ukoresheje sensor na sisitemu zikoresha bizamura inzira ihamye kandi igenzurwe. Byongeye kandi, isesengura rinini ryamakuru rishobora guhindura ibipimo byiterambere, kuzamura ubwiza bwa kristu no gukora neza.

Ikiranga ubuziranenge bwa silicon karbide tekinoroji yo gutegura kristu ni ikintu cyingenzi mu bushakashatsi bwibikoresho bya semiconductor. Mugihe ikoranabuhanga ritera imbere, tekinoroji yo gukura ya SiC izakomeza gutera imbere, itanga urufatiro rukomeye rwibisabwa mubushyuhe bwinshi, inshuro nyinshi, hamwe nimbaraga nyinshi.