Ibyingenzi Byingenzi Kubyara umusaruro-wohejuru wa Silicon Carbide (SiC) Crystal imwe

Ibyingenzi Byingenzi Kubyara umusaruro-wohejuru wa Silicon Carbide (SiC) Crystal imwe

Uburyo nyamukuru bwo gukura silikoni karbide imwe ya kristu imwe harimo ubwikorezi bwimyuka yumubiri (PVT), Gukura-Imbuto Yumuti wo hejuru (TSSG), hamwe nubushyuhe bwo hejuru bwa Temperature (HT-CVD).

Muri ibyo, uburyo bwa PVT bwabaye tekinike yambere yo kubyaza umusaruro inganda bitewe nuburyo bworoshye bwibikoresho byashyizweho, koroshya imikorere no kugenzura, hamwe nibikoresho biri hasi nigiciro cyibikorwa.


Ingingo z'ingenzi za tekinike zo gukura kwa SiC Crystal Ukoresheje Uburyo bwa PVT

Gukura silicon karbide kristal ukoresheje uburyo bwa PVT, ibintu byinshi bya tekiniki bigomba kugenzurwa neza:

  1. Ubuziranenge bwibikoresho bya Graphite mumashanyarazi
    Ibikoresho bya grafite bikoreshwa mumashanyarazi akura yubushyuhe bigomba kuba byujuje ibyangombwa bisukuye. Ibirimo umwanda mubice bya grafite bigomba kuba munsi ya 5 × 10⁻⁶, naho kubirinda munsi ya 10 × 10⁻⁶. By'umwihariko, ibiri muri boron (B) na aluminium (Al) bigomba kuba buri munsi ya 0.1 × 10⁻⁶.

  2. Gukosora Polarite yimbuto ya Crystal
    Amakuru afatika yerekana ko C-isura (0001) ikwiranye no gukura kristu ya 4H-SiC, mugihe Si-face (0001) ikwiranye no gukura kwa 6H-SiC.

  3. Gukoresha Off-Axis Imbuto Crystal
    Imbuto zitari axis zirashobora guhindura imiterere yo gukura, kugabanya inenge za kirisiti, no guteza imbere ubwiza bwa kirisiti.

  4. Imbuto Yizewe ya Crystal Bonding Tekinike
    Guhuza neza hagati yimbuto ya kirisiti hamwe nuwifata ni ngombwa kugirango uhamye mugihe cyo gukura.

  5. Kugumana Iterambere ryimikurire yimbere
    Mugihe cyose cyo gukura kwa kristu, intera yo gukura igomba kuguma ihamye kugirango habeho iterambere ryiza rya kirisiti.

 


Ikoranabuhanga ryibanze muri SiC Gukura

1. Doping Technology ya SiC Powder

Ifu ya Doping SiC hamwe na cerium (Ce) irashobora guhagarika imikurire ya polytype imwe nka 4H-SiC. Imyitozo yerekanye ko Ce doping ishobora:

  • Kongera umuvuduko wubwiyongere bwa kristu ya SiC;

  • Kunoza icyerekezo cya kristu kugirango gikure kimwe kandi cyerekezo;

  • Kugabanya umwanda n'inenge;

  • Kurwanya ruswa yinyuma ya kristu;

  • Kuzamura igipimo kimwe cyo gutanga umusaruro.

2. Igenzura rya Axial na Radial Thermal Gradients

Ubushyuhe bwa Axial bugira ingaruka kuri kristu polytype nigipimo cyikura. Ikigereranyo gito ni gito cyane gishobora kuganisha kuri polytype no kugabanya gutwara ibintu mugice cyumuyaga. Kunonosora ibice byombi bya axial na radial nibyingenzi kugirango bikure byihuse kandi bihamye bya kristu hamwe nubwiza buhoraho.

3. Ikoreshwa ryindege Yibanze (BPD) Ikoranabuhanga

BPDs ikora cyane cyane kubera impagarara zogosha zirenze urwego rukomeye muri sisitemu ya SiC, ikora sisitemu yo kunyerera. Nkuko BPDs itandukanijwe nicyerekezo cyo gukura, mubisanzwe bivuka mugihe cyo gukura no gukonja. Kugabanya imihangayiko y'imbere birashobora kugabanya cyane ubucucike bwa BPD.

4. Igipimo cyicyiciro cyibigize Igenzura

Kongera igipimo cya karuboni-kuri-silicon mugice cyumuyaga nuburyo bwagaragaye bwo guteza imbere imikurire ya polytype imwe. Umubare munini wa C / Si ugabanya macrostep guterana kandi ukagumana umurage wubutaka kuva kristu yimbuto, bityo bikabuza gukora polytypes itifuzwa.

5. Ubuhanga Buke bwo Gukura

Guhangayikishwa no gukura kwa kristu bishobora kuganisha ku ndege zigoramye, guturika, hamwe n'ubucucike bwa BPD. Izi nenge zirashobora kwerekeza mubice bya epitaxial kandi bigira ingaruka mbi kumikorere yibikoresho.

Ingamba nyinshi zo kugabanya ihungabana ryimbere harimo:

  • Guhindura ubushyuhe bwumurima no gukwirakwiza ibipimo kugirango uteze imbere gukura-kuringaniza;

  • Kunonosora igishushanyo mbonera cyemerera kristu gukura mubwisanzure nta mbogamizi;

  • Kunoza imiterere yabafite imbuto kugirango ugabanye ubushyuhe bwo kwagura ubushyuhe hagati yimbuto na grafite mugihe cyo gushyushya, akenshi usize icyuho cya mm 2 hagati yimbuto nuwifite;

  • Kunonosora inzira ya annealing, kwemerera kristu gukonjesha hamwe nitanura, no guhindura ubushyuhe nigihe cyo kugabanya burundu imihangayiko yimbere.


Inzira muri SiC Crystal Gukura Ikoranabuhanga

1. Ingano nini ya Crystal
SiC imwe ya diametre ya kirisiti yiyongereye kuva kuri milimetero nkeya kugera kuri santimetero 6, santimetero 8, ndetse na waferi 12. Wafers nini yongerera umusaruro umusaruro no kugabanya ibiciro, mugihe yujuje ibyifuzo byimbaraga zikoreshwa cyane.

2. Ubwiza bwo hejuru bwa Crystal
Kirisiti yo mu rwego rwohejuru ya SiC ni ngombwa kubikoresho bikora neza. Nubwo hari byinshi byahinduwe, kristu zubu ziracyerekana inenge nka micropipes, dislocations, hamwe n’umwanda, ibyo byose bishobora gutesha agaciro imikorere yibikoresho no kwizerwa.

3. Kugabanya ibiciro
Umusaruro wa kirisiti ya SiC uracyahenze cyane, ugabanya kwaguka kwagutse. Kugabanya ibiciro binyuze muburyo bwiza bwo gukura, kongera umusaruro, no kugabanya ibiciro fatizo ningirakamaro mugukwirakwiza isoko.

4. Gukora Ubwenge
Hamwe niterambere ryubwenge bwubuhanga hamwe nikoranabuhanga rinini ryamakuru, gukura kwa kirisiti ya SiC igenda yerekeza mubikorwa byubwenge, byikora. Sensors na sisitemu yo kugenzura irashobora gukurikirana no guhindura imiterere yo gukura mugihe nyacyo, kunoza imikorere ihamye no guhanura. Isesengura ryamakuru rishobora kurushaho kunoza ibipimo byimikorere hamwe nubwiza bwa kristu.

Iterambere ryubwiza buhanitse bwa SiC tekinoroji yo gukura ni ikintu cyibanze mu bushakashatsi bwibikoresho bya semiconductor. Mugihe ikoranabuhanga rigenda ritera imbere, uburyo bwo gukura bwa kristu buzakomeza gutera imbere no gutera imbere, butanga urufatiro rukomeye rwibikorwa bya SiC mubushyuhe bwinshi, inshuro nyinshi, hamwe nibikoresho bya elegitoroniki bifite ingufu nyinshi.


Igihe cyo kohereza: Nyakanga-17-2025