Indorerwamo za AR za Silicon Carbide zo mu rwego rwa Optical-Grade: Gutegura uduce duto duto two mu bwoko bwa High-Purity Semi-Insulating Substrates

Mu gihe cy’impinduramatwara ya AI, indorerwamo za AR zigenda zinjira mu bitekerezo bya rubanda buhoro buhoro. Nk’uburyo bwo guhuza isi isanzwe n’iy’ukuri, indorerwamo za AR zitandukanye n’ibikoresho bya VR kuko zemerera abakoresha kubona amashusho yakozwe mu buryo bwa elegitoroniki n’urumuri rw’ibidukikije icyarimwe. Kugira ngo bagere kuri iyi mikorere ibiri—kwerekana amashusho ya microdisplay mu maso mu gihe babungabunga urumuri rwo hanze—indorerwamo za AR zishingiye kuri silicon carbide (SiC) zikoresha imiterere y’urumuri (lightguide). Iyi miterere ikoresha urumuri rw’imbere rwose kugira ngo yohereze amashusho, asa n’urumuri rw’amashanyarazi, nk’uko bigaragara mu gishushanyo mbonera.

Ubusanzwe, substrate imwe ya santimetero 6 ifite ubuziranenge buhanitse ishobora gutanga indorerwamo ebyiri, mu gihe substrate ya santimetero 8 ishobora kwakira indorerwamo 3-4. Gukoresha ibikoresho bya SiC bitanga inyungu eshatu z'ingenzi:

1. Icyitegererezo cy’ibara ryihariye (2.7): Gikoresha urubuga rwo kureba amabara yuzuye >80° (FOV) hamwe n’urwego rumwe rw’ikirahuri, bikuraho ibintu by’umukororombya bisanzwe mu miterere isanzwe ya AR.
2. Integrated tri-color waveguide (RGB): Isimbura multi-layer waveguide stacks, ikagabanya ingano n'uburemere bw'igikoresho.
3. Uburyo bwo gutwara ubushyuhe bwinshi (490 W/m·K): Bugabanya kwangirika kw'amatara bitewe no kwibumbira mu bushyuhe.

Izi nyungu zatumye isoko ry’indorerwamo za AR zishingiye kuri SiC rikenera cyane. SiC yo mu rwego rwa optique ikoreshwa ubusanzwe igizwe na kristu za HPSI (high-purity semi-insulating crystals), ibyo zikenera cyane mu gutegura bigira uruhare mu guhenda cyane muri iki gihe. Kubera iyo mpamvu, iterambere rya substrates za HPSI SiC ni ingenzi cyane.

1. Gutunganya Ifu ya SiC Irinda Gutumura
Umusaruro wo mu nganda ukoresha cyane cyane ikoranabuhanga ryo kwikwirakwiza ry’ibinyabutabire mu bushyuhe bwinshi (SHS), igikorwa gisaba igenzura ryimbitse:

• Ibikoresho fatizo: 99.999% by'ifu ya karuboni/silicone yuzuye ifite ingano ya 10–100 μm.
• Ubuziranenge bw'ibice: Ibice bya grafiti bisukurwa mu bushyuhe bwinshi kugira ngo bigabanye ikwirakwira ry'imyanda mu byuma.
• Kugenzura ikirere: Argon ya 6N-purity (ifite imashini zisukura mu murongo) igabanya ikoreshwa rya azote; imyuka ya HCl/H₂ ishobora gushyirwamo kugira ngo ihindure imvange ya boron kandi igabanye azote, nubwo ubwinshi bwa H₂ busaba kongerwamo imbaraga kugira ngo hirindwe kwangirika kwa grafiti.
• Ibipimo ngenderwaho by'ibikoresho: Amatanura yo gukora agomba kugera kuri <10⁻⁴ Pa base vacuum, hamwe na protocole zikomeye zo kugenzura amazi.

2. Imbogamizi zo Gukura kwa Crystal
Iterambere rya HPSI SiC risangiye ibisabwa nk'iby'ubuziranenge:

• Ibiryo: Ifu ya SiC ya 6N+-purity ifite B/Al/N <10¹⁶ cm⁻³, Fe/Ti/O munsi y'umupaka ntarengwa, hamwe n'ibyuma bike bya alkali (Na/K).
• Sisitemu za gaze: 6N argon/hydrogen blends yongera ubushobozi bwo guhangana n'ingufu.
• Ibikoresho: Pompe za molekile zituma umwuka uvamo umwuka mwinshi cyane (<10⁻⁶ Pa); gutunganya mbere yo gukoresha icyuma gishyushya amazi no gusohora azote ni ingenzi cyane.

2.1 Udushya mu gutunganya uduce duto
Ugereranije na silicon, SiC ikura igihe kirekire ndetse n'umuvuduko wayo (bitera guturika/gucika kw'inkombe) bisaba uburyo bwo kuyitunganya buhanitse:

• Gukata hakoreshejwe laser: Byongera umusaruro kuva kuri wafer 30 (350 μm, insinga) kugeza kuri wafers >50 kuri buri boule ya mm 20, bikaba bishobora gutuma 200-μm zigabanuka. Igihe cyo gutunganya kiragabanuka kuva ku minsi 10-15 (insinga) kugeza kuri

3. Ubufatanye mu nganda

Itsinda rya Orion rya Meta ryatangije gahunda yo gukoresha uburyo bwa SiC waveguide, bituma habaho ishoramari mu bushakashatsi no mu iterambere. Ubufatanye bw'ingenzi burimo:

• TankeBlue na MUDI Micro: Iterambere ry'amabara ya AR diffractive waveguide lenses.
• Jingsheng Mech, Longqi Tech, XREAL, na Kunyou Optoelectronics: Ihuriro ry’ingamba zo guhuza uruhererekane rw’ibikoresho bya AI/AR.

Iteganyagihe ry’isoko riteganya ko units 500.000 za AR zishingiye kuri SiC buri mwaka bitarenze umwaka wa 2027, zigakoresha substrates 250.000 za santimetero 6 (cyangwa 125.000 za santimetero 8). Iyi nzira igaragaza uruhare rwa SiC mu guhindura imikorere ya optique ya AR yo mu gisekuru gitaha.

XKH yihariye mu gutanga substrates nziza za 4H-semi-insulating (4H-SEMI) SiC zifite uburebure bushobora guhindurwa kuva kuri santimetero 2 kugeza kuri santimetero 8, zigenewe kuzuza ibisabwa byihariye muri RF, amashanyarazi, na AR/VR optics. Imbaraga zacu zirimo gutanga ingano yizewe, guhindura neza (ubunini, icyerekezo, kurangiza ubuso), no gutunganya neza imbere mu nzu kuva ku gukura kwa kristu kugeza ku gusya. Uretse 4H-SEMI, dutanga kandi substrates za 4H-N, 4H/6H-P, na 3C-SiC, dushyigikira udushya dutandukanye twa semiconductor na optoelectronic.