Ku ya 26, Power Cube Semi yatangaje iterambere ryiza rya Koreya yepfo 2300V SiC ya mbere (Silicon Carbide) MOSFET ya semiconductor.
Ugereranije na semiconductor ishingiye kuri Si (Silicon), SiC (Silicon Carbide) irashobora kwihanganira ingufu nyinshi, bityo bakashimwa nkigikoresho kizaza kiyobora ejo hazaza h'amashanyarazi. Ikora nkigice cyingenzi gisabwa mugutangiza ikoranabuhanga rigezweho, nko gukwirakwiza ibinyabiziga byamashanyarazi no kwagura ibigo byamakuru biterwa nubwenge bwubuhanga.
Power Cube Semi nisosiyete idafite imbaraga iteza imbere ibyuma bikoresha amashanyarazi mu byiciro bitatu byingenzi: SiC (Silicon Carbide), Si (Silicon), na Ga2O3 (Gallium Oxide). Vuba aha, isosiyete yasabye kandi igurisha ubushobozi bwa Schottky Barrier Diode (SBDs) mu isosiyete ikora ibinyabiziga bikoresha amashanyarazi ku isi mu Bushinwa, imenyekana kubera igishushanyo mbonera n’ikoranabuhanga.
Isohora rya 2300V SiC MOSFET rirashimishije nkurubanza rwa mbere rwiterambere muri Koreya yepfo. Infineon, isosiyete ikora amashanyarazi ya semiconductor ku isi ikorera mu Budage, na yo yatangaje ko yashyizwe ahagaragara ibicuruzwa byayo 2000V muri Werurwe, ariko idafite umurongo wa 2300V.
Infineon ya 2000V CoolSiC MOSFET, ikoresheje paketi ya TO-247PLUS-4-HCC, yujuje icyifuzo cyo kongera ingufu z'amashanyarazi mu bashushanya ibintu, bigatuma sisitemu yizerwa ndetse no mu bihe bikomeye bya voltage nini no guhinduranya ibihe.
CoolSiC MOSFET itanga umurongo wo hejuru uhuza voltage, ituma imbaraga ziyongera nta kongera amashanyarazi. Nibikoresho byambere bya disiketi ya silicon karbide kumasoko hamwe na voltage yamenetse ya 2000V, ukoresheje pake ya TO-247PLUS-4-HCC ifite intera ndende ya 14mm hamwe na 5.4mm. Ibi bikoresho biragaragaza igihombo gito kandi birakwiriye gukoreshwa nka inverteri yizuba, sisitemu yo kubika ingufu, hamwe no kwishyuza ibinyabiziga byamashanyarazi.
Ibicuruzwa bya CoolSiC MOSFET 2000V bikwiranye na sisitemu ya bisi ya voltage nini ya DC kugeza 1500V DC. Ugereranije na 1700V SiC MOSFET, iki gikoresho gitanga marge ihagije ya sisitemu ya 1500V DC. CoolSiC MOSFET itanga voltage ya 4.5V kandi ikaza ifite disode yumubiri ikomeye kugirango igabanuke. Hamwe na tekinoroji ya .XT, ibi bice bitanga imikorere myiza yubushyuhe hamwe nubushyuhe bukomeye.
Usibye MOSFET ya 2000V CoolSiC, Infineon vuba aha izashyira ahagaragara diode yuzuzanya ya CoolSiC ipakiye muri TO-247PLUS 4-pin na TO-247-2 mugihembwe cya gatatu cya 2024 nigihembwe cyanyuma cya 2024. Iyi diode irakwiriye cyane cyane gukoresha izuba. Guhuza amarembo yubushoferi ibicuruzwa nabyo birahari.
Ibicuruzwa bya CoolSiC MOSFET 2000V ubu biraboneka ku isoko. Byongeye kandi, Infineon itanga ikibaho gikwiye cyo gusuzuma: EVAL-COOLSIC-2KVHCC. Abashinzwe iterambere barashobora gukoresha iki kibaho nkurwego rusanzwe rwibizamini kugirango basuzume MOSFETs zose za CoolSiC na diode zapimwe kuri 2000V, kimwe na EiceDRIVER compact imwe-imwe yo kwihererana amarembo yumushoferi 1ED31xx ikurikirana ibicuruzwa binyuze mumyanya ibiri cyangwa ibikorwa bya PWM bikomeza.
Gung Shin-soo, Umuyobozi mukuru ushinzwe ikoranabuhanga muri Power Cube Semi, yagize ati: "Twashoboye kugeza ubunararibonye dufite mu iterambere no kubyaza umusaruro umusaruro wa 1700V SiC MOSFETs kugeza 2300V.
Igihe cyo kohereza: Apr-08-2024