Ku itariki ya 26, Power Cube Semi yatangaje iterambere ryiza rya semiconductor ya mbere ya 2300V SiC (Silicon Carbide) MOSFET yo muri Koreya y'Epfo.
Ugereranyije na semiconductor zisanzwe zikoresha Si (Silicon), SiC (Silicon Carbide) ishobora kwihanganira voltage nyinshi, bityo ikaba yiswe igikoresho cy’igisekuru gitaha kizayobora ahazaza h’imashini zikoresha ingufu. Ikora nk'ikintu cy'ingenzi gikenewe mu gutangiza ikoranabuhanga rigezweho, nko gukwirakwiza imodoka zikoresha amashanyarazi no kwagura centers z’amakuru ziyobowe n’ubwenge bw’ubukorano.
Power Cube Semi ni ikigo kidapfa gushimwa gikora ibikoresho bya semiconductor bikoresha ingufu mu byiciro bitatu by'ingenzi: SiC (Silicon Carbide), Si (Silicon), na Ga2O3 (Gallium Oxide). Vuba aha, ikigo cyasabye kandi kigurisha Schottky Barrier Diodes (SBDs) zifite ubushobozi bwo hejuru ku ikigo mpuzamahanga cy’imodoka zikoresha amashanyarazi mu Bushinwa, bityo kibona ishimwe kubera imiterere n’ikoranabuhanga byacyo bya semiconductor.
Isohoka rya 2300V SiC MOSFET ni ikintu cy’ingenzi nk’iki cyabaye mu iterambere rya mbere muri Koreya y’Epfo. Infineon, ikigo mpuzamahanga gishinzwe ingufu zikomoka kuri semiconductor gifite icyicaro mu Budage, nacyo cyatangaje ko kizatangiza ibicuruzwa byacyo bya 2000V muri Werurwe, ariko nta rutonde rw’ibicuruzwa bya 2300V bifite.
Infineon's 2000V CoolSiC MOSFET, ikoresheje paki ya TO-247PLUS-4-HCC, ihaza icyifuzo cy’ingufu nyinshi mu bashushanya, bigatuma sisitemu ikora neza ndetse no mu gihe cy’ingufu nyinshi za voltage no guhinduranya.
CoolSiC MOSFET itanga voltage nyinshi y'amashanyarazi ahuza umuyoboro w'amashanyarazi, bigatuma ingufu ziyongera nta ngufu ziyongera. Ni cyo gikoresho cya mbere cya silikoni carbide ku isoko gifite voltage ya 2000V, gikoresha paki ya TO-247PLUS-4-HCC ifite intera ya mm 14 n'aho irenga mm 5.4. Ibi bikoresho bifite igihombo gito cyo guhindura kandi bikwiranye n'ibikoresho nka inverters z'imirasire y'izuba, sisitemu zo kubika ingufu, no gushyushya imodoka zikoresha amashanyarazi.
Uruhererekane rw'ibicuruzwa bya CoolSiC MOSFET 2000V rukwiriye sisitemu ya DC ifite voltage nyinshi kugeza kuri 1500V DC. Ugereranyije na 1700V SiC MOSFET, iki gikoresho gitanga uburebure buhagije bwa voltage kuri sisitemu ya DC ya 1500V. CoolSiC MOSFET itanga voltage ya 4.5V kandi ifite diode zikomeye zo guhindura imikorere. Hamwe n'ikoranabuhanga rya .XT, ibi bice bitanga imikorere myiza y'ubushyuhe n'ubudahangarwa bukomeye bw'ubushuhe.
Uretse 2000V CoolSiC MOSFET, Infineon izashyira ahagaragara diode zuzuzanya za CoolSiC zipakiye muri paki za TO-247PLUS 4-pin na TO-247-2 mu gihembwe cya gatatu cya 2024 no mu gihembwe cya nyuma cya 2024, uko bikurikirana. Izi diode zikwiriye cyane gukoreshwa ku mirasire y'izuba. Hari kandi n'ibicuruzwa bihuye n'ibinyabiziga bikoresha amarembo.
Uruhererekane rw'ibicuruzwa bya CoolSiC MOSFET 2000V ubu ruraboneka ku isoko. Byongeye kandi, Infineon itanga ibibaho bikwiye byo gusuzuma: EVAL-COOLSIC-2KVHCC. Abakora porogaramu bashobora gukoresha iki kibaho nk'urubuga rusanzwe rwo gusuzuma MOSFET zose za CoolSiC na diode zifite amanota ya 2000V, ndetse na EiceDRIVER compact single-channel isolation gate driver 1ED31xx product series binyuze mu gukora dual-pulse cyangwa continuous PWM.
Gung Shin-soo, Umuyobozi Mukuru w’Ikoranabuhanga muri Power Cube Semi, yagize ati: "Twashoboye kongera ubunararibonye twari dufite mu iterambere no gukora ku bwinshi 1700V SiC MOSFETs kugera kuri 2300V."
Igihe cyo kohereza: Mata-08-2024