Karubide ya Silicon Ceramics vs. Semiconductor Karubide ya Silicon: Ibikoresho bimwe bifite iherezo ritandukanye

Karubide ya Silicon (SiC) ni ikintu gitangaje gishobora kuboneka mu nganda za semiconductor ndetse no mu bicuruzwa bya semiconductor bigezweho. Ibi bikunze gutera urujijo mu bantu basanzwe bashobora kwibeshya ko ari ubwoko bumwe bw'ibicuruzwa. Mu by'ukuri, nubwo bisangiye imiterere imwe y'ibinyabutabire, SiC igaragara nk'ibumba rigezweho ridashobora kwangirika cyangwa semiconductor zikora neza cyane, zikagira uruhare rutandukanye rwose mu bikorwa by'inganda. Hari itandukaniro rikomeye hagati y'ibikoresho bya SiC byo mu rwego rwa ceramic n'ibyo mu rwego rwa semiconductor mu bijyanye n'imiterere ya kristalo, inzira zo gukora, imiterere y'imikorere, n'aho bikoreshwa.

 

  1. Ibisabwa ku isuku itandukanye ku bikoresho fatizo

 

SiC yo mu rwego rwa Ceramic ifite ibisabwa byoroshye byo gutunganya ifu yayo. Ubusanzwe, ibicuruzwa byo mu rwego rwa 90%-98% byo mu rwego rwa ceramic bishobora guhaza ibyifuzo byinshi byo gukoreshwa, nubwo ibikoresho byo mu rwego rwa ceramic bikora neza bishobora gusaba ko 98%-99.5% byo gutunganya ifu (urugero: SiC ifite reaction-bond isaba silicone igenzurwa). Yihanganira imyanda imwe n'imwe kandi rimwe na rimwe ishyiramo nkana ibikoresho byo gutunganya ifu nka aluminiyumu oxyde (Al₂O₃) cyangwa yttrium oxide (Y₂O₃) kugira ngo inoze imikorere yo gutunganya ifu, igabanye ubushyuhe bwo gutunganya ifu, kandi yongere ubucucike bw'ibicuruzwa bya nyuma.

 

SiC yo mu rwego rwa semiconductor isaba urwego rw'ubuziranenge hafi ya bwose. SiC yo mu rwego rwa substrate isaba ubuziranenge bwa ≥99.9999% (6N), hamwe n'uburyo bwo hejuru busaba ubuziranenge bwa 7N (99.99999%). Epitaxial layers igomba kugumana ubuziranenge buri munsi ya atome 10¹⁶ / cm³ (cyane cyane kwirinda imyanda yo mu rwego rwo hejuru nka B, Al, na V). Ndetse n'imyanda mike nka icyuma (Fe), aluminiyumu (Al), cyangwa boron (B) ishobora kugira ingaruka zikomeye ku miterere y'amashanyarazi itera gukwirakwira kw'imodoka, ikagabanya imbaraga z'umurima, kandi amaherezo ikabangamira imikorere n'ubwizigirwa bw'igikoresho, bigasaba kugenzura cyane imyanda.

 

碳化硅半导体材料

Ibikoresho bya semiconductor bya silicon carbide

 

  1. Imiterere n'ubwiza bya kristu bitandukanye

 

SiC yo mu rwego rwa Ceramic iboneka cyane cyane nk'ifu ya polycrystalline cyangwa imibiri yanduye igizwe n'uturemangingo twinshi twa SiC twihariye. Ibikoresho bishobora kuba birimo ubwoko bwinshi bwa polytypes (urugero: α-SiC, β-SiC) hatabayeho kugenzura cyane ubwoko bwihariye bwa polytypes, ahubwo hibandwa ku bucucike bw'ibikoresho muri rusange no ku buryo bumwe. Imiterere yayo y'imbere ifite imbibi nyinshi z'ibinyampeke n'imyenge mitomike, kandi ishobora kuba irimo ibikoresho bifasha mu kuvura (urugero: Al₂O₃, Y₂O₃).

 

SiC yo mu rwego rwa semiconductor igomba kuba ari substrates ya crystal imwe cyangwa epitaxial layers ifite imiterere ya crystal itondekanye cyane. Ikenera polytypes zihariye ziboneka binyuze mu buryo bwo gukura neza kwa crystal (urugero, 4H-SiC, 6H-SiC). Imiterere y'amashanyarazi nka electron mobility na bandgap irakomeye cyane iyo itoranijwe na polytype, bityo ikaba isaba igenzura rikomeye. Muri iki gihe, 4H-SiC niyo iyoboye isoko bitewe n'imiterere yayo myiza y'amashanyarazi harimo mobility nyinshi ya carrier no kwangirika kw'imbaraga z'amashanyarazi, bigatuma iba nziza ku bikoresho by'amashanyarazi.

 

  1. Kugereranya Inzira Igoye

 

SiC yo mu rwego rwa Ceramic ikoresha uburyo bworoshye bwo gukora (gutegura ifu → gukora → gusya), bisa no "gukora amatafari." Ubu buryo bukubiyemo:

 

  • Kuvanga ifu ya SiC yo mu rwego rwo kugurisha (ubusanzwe ingana na mikoroni) n'ibikoresho byo gufunga
  • Gukora ukoresheje gukanda
  • Gushyushya cyane (1600-2200°C) kugira ngo habeho ubucucike binyuze mu gukwirakwiza uduce
    Inyinshi mu bikorwa zishobora kwuzuzwa n'ubucucike buri hejuru ya 90%. Uburyo bwose ntibusaba kugenzura neza gukura kwa kristu, ahubwo hibandwa ku gukora no gusya ibintu bihamye. Ibyiza birimo koroshya uburyo bwo gukora ibintu ku miterere igoye, nubwo nta byangombwa byo gutungana bihagije bisaba.

 

SiC yo mu rwego rwa semiconductor ikubiyemo inzira zigoye cyane (gutegura ifu ifite ubuziranenge bwinshi → gukura kwa substrate ya kristale imwe → gushyiramo wafer ya epitaxial → gukora igikoresho). Intambwe z'ingenzi zirimo:

 

  • Gutegura substrate ahanini hakoreshejwe uburyo bwo gutwara umwuka ushyushye (PVT)
  • Gushyira ifu ya SiC mu kirere mu bihe bikomeye cyane (2200-2400°C, ifu nyinshi ivamo umwuka)
  • Kugenzura neza ubushyuhe (± 1°C) n'ibipimo by'umuvuduko
  • Gukura kw'urwego rwa Epitaxial binyuze mu gutanga umwuka w'ubushyuhe (CVD) kugira ngo habeho urwego rungana kandi rufite ubunini bungana (ubusanzwe mikoroni nyinshi kugeza ku icumi)
    Uburyo bwose busaba ahantu hasukuye cyane (urugero, ibyumba byo gusukura byo mu cyiciro cya 10) kugira ngo hirindwe kwandura. Ibiranga birimo uburyo buhanitse bwo gukora, busaba kugenzura ubushyuhe n'umuvuduko wa gaze, hamwe n'ibisabwa bikomeye kugira ngo ibikoresho fatizo bisukure (>99.9999%) ndetse n'uburyo ibikoresho bigezweho bitunganijwe neza.

 

  1. Itandukaniro rikomeye ku giciro n'icyerekezo cy'isoko

 

Ibiranga SiC yo mu rwego rwa Ceramic:

  • Ibikoresho fatizo: Ifu yo mu rwego rwo kugurisha
  • Uburyo bworoshye cyane
  • Igiciro gito: Ibihumbi kugeza ku bihumbi mirongo kuri toni
  • Imikoreshereze yagutse: Ibikoresho byo gukurura ibintu bitagira ingano, ibidakoreshwa mu gukurura ibintu bidafite ingano, n'izindi nganda zihenze cyane

 

Ibiranga SiC yo mu rwego rwa semiconductor:

  • Ingendo ndende zo gukura kw'ubutaka
  • Guhangana n'ibiza mu kugenzura ubusembwa
  • Umusaruro uri hasi
  • Igiciro kiri hejuru: Ibihumbi by'amadolari ya Amerika kuri substrate ya santimetero 6
  • Amasoko yibanda ku bintu bitandukanye: Ibyuma by'ikoranabuhanga bigezweho nk'ibikoresho by'amashanyarazi n'ibice bya RF
    Bitewe n'iterambere ryihuse ry'imodoka nshya zikoresha ingufu n'itumanaho rya 5G, icyifuzo cy'isoko kiriyongera cyane.

 

  1. Imiterere itandukanye y'ikoreshwa

 

SiC yo mu rwego rwa Ceramic ikora nk' "ikoreshwa mu nganda" cyane cyane mu bikorwa by'inyubako. Ikoresha imiterere yayo myiza ya mekanike (ubukomere bwinshi, kudashira) n'imiterere y'ubushyuhe (kudashira ubushyuhe bwinshi, kudashira), irarusha izindi muri ibi bikurikira:

 

  • Ibikoresho byo gusya (amapine yo gusya, impapuro zo gusya)
  • Ibikoresho byo mu itanura bishyuha cyane (refractories)
  • Ibikoresho birwanya kwangirika/kwangirika (imiyoboro y'ipompe, imiyoboro y'amazi)

 

碳化硅陶瓷结构件

Ibice by'imiterere ya karubide ya silikoni

 

SiC yo mu rwego rwa semiconductor ikora nk'"itsinda ry'abahanga mu by'ikoranabuhanga," ikoresha imiterere yayo ya semiconductor ifite agahenge gakomeye kugira ngo igaragaze inyungu zidasanzwe mu bikoresho by'ikoranabuhanga:

 

  • Ibikoresho by'amashanyarazi: Inverters za EV, converters za grid (kunoza imikorere myiza yo guhindura amashanyarazi)
  • Ibikoresho bya RF: sitasiyo za 5G, sisitemu za radar (zituma umurongo wo gukora uba mwinshi)
  • Ibyuma by'ikoranabuhanga: Ibikoresho byo mu bwoko bwa substrate bya LED z'ubururu

 

200 毫米 SiC 外延晶片

Wafer ya SiC epitaxial ya milimetero 200

 

Ingano

SiC yo mu rwego rwa Ceramic

SiC yo mu rwego rwa semiconductor

Imiterere ya kristu

Polycrystalline, ubwoko bwinshi bwa polytypes

Ibara rimwe rya kristu, ubwoko bwa poliyumu zatoranijwe neza

Icyerekezo cy'Ibikorwa

Ubucucike n'igenzura ry'imiterere

Igenzura ry'ubuziranenge n'umutungo w'amashanyarazi bya kristale

Ishyirwa mu bikorwa ry'ibanze

Imbaraga za mashini, kurwanya ingese, kudahungabana k'ubushyuhe

Imiterere y'amashanyarazi (icyuho cy'umugozi, aho amashanyarazi anyura, nibindi)

Ingero z'Ikoreshwa

Ibice by'inyubako, ibice bidashobora kwangirika, ibice bishyuha cyane

Ibikoresho bifite ingufu nyinshi, ibikoresho bifite umurongo munini, ibikoresho bifite optoelectronic

Ibikoresho bitwara ikiguzi

Ubworoherane mu mikorere, igiciro cy'ibikoresho fatizo

Igipimo cyo gukura kwa kristu, ubwiza bw'ibikoresho, ubuziranenge bw'ibikoresho fatizo

 

Muri make, itandukaniro ry'ibanze rituruka ku ntego zabyo zitandukanye: SiC yo mu rwego rwa ceramic ikoresha "imiterere (imiterere)" mu gihe SiC yo mu rwego rwa semiconductor ikoresha "imiterere (amashanyarazi)." Iya mbere ikurikirana imikorere ihendutse ya mekanike/ubushyuhe, mu gihe iya nyuma igaragaza ikoranabuhanga ryo gutegura ibikoresho nk'ibikoresho bifite isuku nyinshi, bifite imikorere ya kristale imwe. Nubwo bisangiye inkomoko imwe ya shimi, SiC yo mu rwego rwa ceramic na SiC yo mu rwego rwa semiconductor bigaragaza itandukaniro rigaragara mu buziranenge, imiterere ya kristale, n'imikorere y'inganda - nyamara byombi bigira uruhare runini mu musaruro w'inganda no mu iterambere ry'ikoranabuhanga mu nzego zabyo.

 

XKH ni ikigo cy’ikoranabuhanga rigezweho cyihariye mu bushakashatsi no guteza imbere no gukora ibikoresho bya silicon carbide (SiC), gitanga serivisi zo guteza imbere, gutunganya neza, no gutunganya ubuso kuva kuri ceramics za SiC zifite isuku yo hejuru kugeza kuri kristu za SiC zo mu rwego rwa semiconductor. Ikoresheje ikoranabuhanga rigezweho ryo gutegura n’imirongo y’imikorere y’ubwenge, XKH itanga ibicuruzwa bya SiC bifite imikorere ihindagurika (90%-7N purity) n’ibisubizo bigenzurwa n’imiterere (polycrystalline/single-crystalline) ku bakiriya mu bijyanye na semiconductor, ingufu nshya, indege n’izindi nzego zigezweho. Ibicuruzwa byacu bikoreshwa cyane mu bikoresho bya semiconductor, imodoka zikoresha amashanyarazi, itumanaho rya 5G n’inganda zijyanye nabyo.

 

Ibi bikurikira ni ibikoresho bya keramike bya silikoni karubide byakozwe na XKH.

 

https://www.xkh-semitech.com/silicon-carbide-ceramic-tray-sucker-silicon-carbide-ceramic-tube-supply-high-temperature-sintering-custom-processing-product/

Igihe cyo kohereza: 30 Nyakanga-2025