Silicon Carbide Ceramics na Semiconductor Silicon Carbide: Ibikoresho bimwe hamwe nibintu bibiri bitandukanye

1. Ibisabwa Byera Bitandukanye Kubikoresho Byibanze

 

Ceramic yo mu rwego rwa Ceramic ifite ibyangombwa bisukuye byoroheje byifu yifu. Mubisanzwe, ibicuruzwa byo mu rwego rwubucuruzi bifite 90% -98% byera birashobora guhaza ibyifuzo byinshi, nubwo ubukorikori bukomeye bwububiko bushobora gusaba 98% -99.5% byera (urugero, SiC ihuza na silike yubusa). Ihanganira umwanda runaka kandi rimwe na rimwe ikubiyemo nkana ibikoresho bifasha gucumura nka aluminium oxyde (Al₂O₃) cyangwa okiside ya yttrium (Y₂O₃) kugirango itezimbere imikorere yicyaha, ubushyuhe buke bwo gucumura, kandi byongere ubwinshi bwibicuruzwa.

 

Semiconductor-urwego SiC isaba hafi-yuzuye urwego rwubuziranenge. Substrate-urwego rumwe rwa kristu ya SiC isaba ≥99.9999% (6N) isuku, hamwe na progaramu zimwe zo murwego rwohejuru zikenera 7N (99.99999%). Ibice bya Epitaxial bigomba gukomeza kwibanda ku mwanda uri munsi ya 10¹⁶ atom / cm³ (cyane cyane wirinda umwanda wo mu rwego rwo hejuru nka B, Al, na V). Ndetse no kwanduza umwanda nk'icyuma (Fe), aluminium (Al), cyangwa boron (B) birashobora kugira ingaruka zikomeye kumitungo y'amashanyarazi itera abatwara ibintu, kugabanya imbaraga zumurima, kandi amaherezo bikabangamira imikorere yibikoresho no kwizerwa, bisaba kugenzura cyane umwanda.

 

Silicon karbide igice cya kabiri

 

2. Imiterere itandukanye ya Crystal nuburyo bwiza

 

Ceramic yo mu rwego rwa Ceramic ibaho cyane cyane nkifu ya polycristaline cyangwa imibiri yacumuye igizwe na microcrystal nyinshi ya SiC itabishaka. Ibikoresho birashobora kuba birimo polytypes nyinshi (urugero, α-SiC, β-SiC) bitagenzuwe cyane kuri polytypes yihariye, hibandwa aho kwibanda kubintu byose hamwe. Imiterere yimbere iragaragaza imbibi nyinshi nimbuto za microscopique, kandi irashobora kuba irimo imfashanyo zicumura (urugero, Al₂O₃, Y₂O₃).

 

Semiconductor-urwego SiC igomba kuba imwe-kristal substrate cyangwa epitaxial layers hamwe na kristu yubatswe cyane. Irasaba polytypes yihariye yabonetse hakoreshejwe tekinoroji yo gukura neza (urugero, 4H-SiC, 6H-SiC). Ibikoresho byamashanyarazi nka moteri ya electron na bandgap byumva cyane guhitamo polytype, bisaba kugenzurwa cyane. Kugeza ubu, 4H-SiC yiganje ku isoko kubera imiterere y’amashanyarazi isumba ayandi harimo gutwara ibintu byinshi no gutwara imbaraga zumurima, bigatuma biba byiza kubikoresho byamashanyarazi.

 

3. Kugereranya inzira

 

Ceramic yo mu rwego rwa Ceramic ikoresha uburyo bworoshye bwo gukora (gutegura ifu → gukora → gucumura), bisa n '“kubumba amatafari.” Inzira ikubiyemo:

 

• Kuvanga ifu ya SiC yubucuruzi (mubisanzwe micron-nini) hamwe na binders
• Gushiraho ukoresheje gukanda
• Ubushyuhe bwo hejuru cyane (1600-2200 ° C) kugirango ugere kuri densification binyuze mu gukwirakwiza ibice
  Porogaramu nyinshi zirashobora kunyurwa na> 90%. Inzira yose ntisaba kugenzura neza gukura kwa kristu, kwibanda aho gushiraho no gucumura neza. Ibyiza birimo uburyo bwo guhinduka kumiterere igoye, nubwo ugereranije nibisabwa byo hasi.

 

Semiconductor-yo mu rwego rwa SiC ikubiyemo inzira zigoye cyane (gutegura ifu yuzuye-isuku yo gutegura growth gukura-kristu imwe ya substrate gukura → epitaxial wafer deposition → guhimba ibikoresho). Intambwe z'ingenzi zirimo:

 

• Substrate imyiteguro cyane cyane ikoresheje uburyo bwo gutwara imyuka yumubiri (PVT)
• Kugabanuka kw'ifu ya SiC mubihe bikabije (2200-2400 ° C, icyuho kinini)
• Kugenzura neza ubushyuhe bwa gradients (± 1 ° C) hamwe nibipimo byumuvuduko
• Gukura kwa Epitaxial binyuze mumyuka ya chimique (CVD) kugirango habeho umubyimba umwe, wuzuye (mubisanzwe ni microni kugeza kuri mirongo)
  Inzira yose isaba ibidukikije bisukuye cyane (urugero, ubwiherero bwo mu cyiciro cya 10) kugirango wirinde kwanduza. Ibiranga ibintu birimo inzira ikabije, bisaba kugenzura imirima yumuriro nigipimo cya gazi, hamwe nibisabwa cyane kubintu byera (> 99.9999%) hamwe nibikoresho byujuje ubuziranenge.

 

4. Ibiciro Byingenzi Itandukaniro nicyerekezo cyisoko

 

Ibiranga urwego rwa Ceramic:

• Ibikoresho bibisi: Ifu yo mu rwego rwubucuruzi
• Ugereranije inzira yoroshye
• Igiciro gito: Ibihumbi kugeza ku bihumbi mirongo kuri toni
• Porogaramu yagutse: Abrasives, inganda, nizindi nganda zita kubiciro

 

Semiconductor-urwego rwa SiC ibiranga:

• Inzira ndende yo gukura
• Kurwanya kugenzura inenge
• Igipimo gito cy'umusaruro
• Igiciro kinini: Ibihumbi USD kuri substrate ya santimetero 6
• Amasoko yibanze: ibikoresho bya elegitoroniki bikora cyane nkibikoresho byamashanyarazi nibigize RF
  Hamwe niterambere ryihuse ryimodoka nshya ningufu za 5G, isoko ryiyongera cyane.

 

5. Gutandukanya Porogaramu

 

Ceramic-grade SiC ikora nk "uruganda rukora inganda" cyane cyane mubikorwa byubaka. Gukoresha imiterere yubukorikori buhebuje (gukomera cyane, kwambara birwanya) hamwe nubushyuhe bwumuriro (kurwanya ubushyuhe bwo hejuru, kurwanya okiside), birenze muri:

 

• Abrasives (gusya ibiziga, sandpaper)
• Amashanyarazi (ubushyuhe bwo hejuru bw'itanura)
• Kwambara / kwangirika kwangirika (imibiri ya pompe, imirongo ya pipe)

 

Silicon carbide ceramic ibice byubaka

 

Semiconductor-yo mu rwego rwa SiC ikora nka "intore za elegitoroniki," ikoresha imiterere yagutse ya semiconductor yerekana ibyiza byihariye mubikoresho bya elegitoroniki:

 

• Ibikoresho byingufu: EV inverters, gride ihindura (kunoza imikorere yo guhindura ingufu)
• Ibikoresho bya RF: Sitasiyo ya 5G, sisitemu ya radar (ituma imirongo ikora cyane)
• Optoelectronics: Substrate material ya LED yubururu

 

Milimetero 200 SiC epitaxial wafer

 

Igipimo	Ceramic-Urwego SiC	Semiconductor-urwego rwa SiC
Imiterere ya Crystal	Polycrystalline, polytypes nyinshi	Ikirahuri kimwe, cyatoranijwe cyane polytypes
Inzira yibanze	Kwiyongera no kugenzura imiterere	Ubwiza bwa Crystal hamwe no kugenzura umutungo w'amashanyarazi
Imikorere Yibanze	Imbaraga za mashini, kurwanya ruswa, guhagarara neza	Ibikoresho by'amashanyarazi (bandgap, umurima wo gusenyuka, nibindi)
Gusaba	Ibice byubaka, ibice birwanya kwambara, ubushyuhe bwo hejuru	Ibikoresho bifite ingufu nyinshi, ibikoresho byihuta cyane, ibikoresho bya optoelectronic
Abashoferi	Inzira ihindagurika, igiciro cyibikoresho	Iterambere ryikura rya Crystal, ibikoresho neza, ibikoresho byera

 

Muri make, itandukaniro ryibanze rituruka kumigambi yabo itandukanye: imikorere ya ceramic-yo mu rwego rwa ceramic ikoresha "form (imiterere)" mugihe SiC ikoresha icyiciro cya kabiri ikoresha "imitungo (amashanyarazi)." Iyambere ikurikirana imikorere-yubukanishi / yubushyuhe, mugihe iyanyuma igereranya isonga ryubuhanga bwo gutegura ibikoresho nkibintu byera cyane, ibikoresho bya kristu imwe. Nubwo gusangira inkomoko imwe ya chimique, urwego rwubutaka na semiconductor-urwego rwa SiC rugaragaza itandukaniro rigaragara mubyera, imiterere ya kirisiti, nuburyo bwo gukora - nyamara byombi bigira uruhare runini mubikorwa byinganda no guteza imbere ikoranabuhanga murwego rwabo.