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Ubuyobozi bwuzuye ku biti bya Silicon Carbide Wafers/SiC wafer

Incamake ya SiC wafer

 Uduce twa silikoni (SiC) twa waferByabaye ahantu nyaburanga hakundwa cyane mu bikoresho by'ikoranabuhanga bikoresha ingufu nyinshi, inshuro nyinshi, n'ubushyuhe bwinshi mu bijyanye n'imodoka, ingufu zisubiramo, n'ikirere. Porogaramu yacu ikubiyemo ubwoko bw'ingenzi bwa polytypes na gahunda zo gukoresha doping—4H (4H-N) ifite azote (azote), 3C (3C-N) ifite azote (4H/6H) na p-type 4H/6H (4H/6H-P)—bitangwa mu byiciro bitatu by'ubuziranenge: PRIME (ibikoresho bya polished byuzuye, ibikoresho bya polished), DUMMY (yashyizwemo cyangwa idapolished mu igeragezwa ry'imikorere), na RESEARCH (imiterere ya epi layers na doping profiles ku bushakashatsi n'iterambere). Uduce twa wafer dufata 2″, 4″, 6″, 8″, na 12″ kugira ngo bijyane n'ibikoresho bya kera n'ibya kera. Dutanga kandi boule za monocrystalline na kristu z'imbuto zishingiye ku murongo kugira ngo zishyigikire gukura kwa kristu mu nzu.

Wafer zacu za 4H-N zifite ubucucike kuva kuri 1 × 10¹⁶ kugeza kuri 1 × 10¹⁹ cm⁻³ n'ubucucike bwa 0.01–10 Ω·cm, zitanga uburyo bwiza bwo kugenda no kwangirika kwa electron hejuru ya 2 MV/cm - ni nziza kuri diode za Schottky, MOSFET, na JFET. Substrates za HPSI zirengeje 1 × 10¹² Ω·cm hamwe n'ubucucike bwa micropipe buri munsi ya 0.1 cm⁻², bigatuma habaho gusohoka gake ku bikoresho bya RF na microwave. Cubic 3C-N, iboneka mu buryo bwa 2″ na 4″, ituma heteroepitaxy kuri silicon kandi igashyigikira porogaramu nshya za photonic na MEMS. Wafer za P-type 4H/6H-P, zivanze na aluminiyumu kuri 1 × 10¹⁶–5×10¹⁸ cm⁻³, zoroshya imiterere y'ibikoresho byuzuzanya.

Wafer za SiC, PRIME zikorerwa isuku ya shimi-mechanical kugeza kuri <0.2 nm RMS ubugari bw'ubuso, ihindagurika ry'ubugari bwose buri munsi ya µm 3, na bow <10 µm. Dustes za DUMMY zihutisha ibizamini byo guteranya no gupakira, mu gihe RESEARCH wafers zifite ubugari bwa epi-layer bwa 2–30 µm n'ikoreshwa ry'imiti ryakozwe mu buryo bwihariye. Ibicuruzwa byose byemejwe na X-ray diffraction (rocking curve <30 arcsec) na Raman spectroscopy, hamwe n'ibizamini by'amashanyarazi—ibipimo bya Hall, C–V profiling, na micropipe scanning—bigamije kwemeza ko JEDEC na SEMI byujuje ibisabwa.

Uduti tw’imbuto dufite umurambararo wa mm 150 duhingwa hakoreshejwe PVT na CVD dufite ubucucike buri munsi ya cm⁻² 1×10³ kandi dufite umubare muto w’uduti twa micropipe. Uduti tw’imbuto ducibwa muri dogere 0.1 z’umurongo wa c kugira ngo twizere ko dushobora kongera gukura no gukata umusaruro mwinshi.

Binyuze mu guhuza ubwoko bwinshi bwa polytypes, ubwoko bwa doping, ubwiza bw'ibipimo, ingano ya SiC wafer, n'umusaruro wa boule na seed-crystal mu nzu, urubuga rwacu rwa SiC substrate rworoshya imiyoboro y'ibicuruzwa kandi rukihutisha iterambere ry'ibikoresho by'imodoka zikoresha amashanyarazi, imiyoboro y'amashanyarazi, n'ibidukikije bikomeye.

Incamake ya SiC wafer

 Uduce twa silikoni (SiC) twa waferByabaye nk'ibikoresho bya SiC by'ingenzi mu gukoresha ikoranabuhanga rikoresha ingufu nyinshi, frequency nyinshi, n'ubushyuhe bwinshi mu nzego z'imodoka, ingufu zisubira, n'indege. Porogaramu yacu ikubiyemo ubwoko bw'ingenzi bwa polytypes na gahunda zo gukoresha doping—4H (4H-N) ifite azote (azote), 4H (4H-N) ifite ubuziranenge buhanitse (HPSI), 3C ifite azote (3C-N), na 4H/6H (4H/6H-P)—bitangwa mu byiciro bitatu by'ubuziranenge: SiC waferPRIME (ifite isuku yuzuye, ifite ubushobozi bwo gukoresha ibikoresho), DUMMY (ifite isuku cyangwa idatogoshejwe kugira ngo ikoreshwe mu igerageza ry’imikorere), na RESEARCH (ifite ibyiciro bya epi na doping profiles ku bushakashatsi n’iterambere). Uduce twa SiC Wafer dufata uburebure bwa 2″, 4″, 6″, 8″, na 12″ kugira ngo bijyane n’ibikoresho bya kera ndetse n’ibikoresho bigezweho. Dutanga kandi boule za monocrystalline na kristu z’imbuto zishingiye ku buryo buboneye kugira ngo dufashe gukura kwa kristu mu nzu.

Wafer zacu za 4H-N SiC zifite ubucucike kuva kuri 1 × 10¹⁶ kugeza kuri 1 × 10¹⁹ cm⁻³ n'ubucucike bwa 0.01–10 Ω·cm, zitanga uburyo bwiza bwo kugenda no kwangirika kwa electron hejuru ya 2 MV/cm - ni nziza kuri diode za Schottky, MOSFET, na JFET. Substrates za HPSI zirengeje 1 × 10¹² Ω·cm hamwe n'ubucucike bwa micropipe buri munsi ya 0.1 cm⁻², bigatuma habaho gusohoka gake ku bikoresho bya RF na microwave. Cubic 3C-N, iboneka mu buryo bwa 2″ na 4″, ituma heteroepitaxy kuri silicon kandi igashyigikira porogaramu nshya za photonic na MEMS. Wafer za SiC P-type 4H/6H-P, zivanze na aluminiyumu kuri 1 × 10¹⁶–5×10¹⁸ cm⁻³, zoroshya imiterere y'ibikoresho byuzuzanya.

Wafer za SiC PRIME zikorerwa isuku ya shimi-mechanical kugeza kuri <0.2 nm RMS ubugari bw'ubuso, ihindagurika ry'ubugari bwose buri munsi ya µm 3, na bow <10 µm. Dusate za DUMMY zihutisha ibizamini byo guteranya no gupakira, mu gihe RESEARCH wafers zifite ubugari bwa epi-layer bwa 2–30 µm n'ikoreshwa ry'imiti. Ibicuruzwa byose byemejwe na X-ray diffraction (rocking curve <30 arcsec) na Raman spectroscopy, hamwe n'ibizamini by'amashanyarazi—ibipimo bya Hall, C–V profiling, na micropipe scanning—bigamije kwemeza ko JEDEC na SEMI byujuje ibisabwa.

Uduti tw’imbuto dufite umurambararo wa mm 150 duhingwa hakoreshejwe PVT na CVD dufite ubucucike buri munsi ya cm⁻² 1×10³ kandi dufite umubare muto w’uduti twa micropipe. Uduti tw’imbuto ducibwa muri dogere 0.1 z’umurongo wa c kugira ngo twizere ko dushobora kongera gukura no gukata umusaruro mwinshi.

Binyuze mu guhuza ubwoko bwinshi bwa polytypes, ubwoko bwa doping, ubwiza bw'ibipimo, ingano ya SiC wafer, n'umusaruro wa boule na seed-crystal mu nzu, urubuga rwacu rwa SiC substrate rworoshya imiyoboro y'ibicuruzwa kandi rukihutisha iterambere ry'ibikoresho by'imodoka zikoresha amashanyarazi, imiyoboro y'amashanyarazi, n'ibidukikije bikomeye.

Ifoto ya SiC wafer

Urupapuro rw'amakuru rwa SiC wafer yo mu bwoko bwa santimetero 6, 4H-N

 

Urupapuro rw'amakuru rwa SiC wafers ya santimetero 6
Igipimo Igice cy'ibipimo Icyiciro cya Z Icyiciro cya P Icyiciro cya D
Ingano   149.5–150.0 mm 149.5–150.0 mm 149.5–150.0 mm
Ubunini 4H‑N 350 µm ± 15 µm 350 µm ± 25 µm 350 µm ± 25 µm
Ubunini 4H‑SI 500 µm ± 15 µm 500 µm ± 25 µm 500 µm ± 25 µm
Icyerekezo cya Wafer   Umurongo utari hagati y'umurongo: 4.0° ugana <11-20> ±0.5° (4H-N); Umurongo utari hagati y'umurongo: <0001> ±0.5° (4H-SI) Umurongo utari hagati y'umurongo: 4.0° ugana <11-20> ±0.5° (4H-N); Umurongo utari hagati y'umurongo: <0001> ±0.5° (4H-SI) Umurongo utari hagati y'umurongo: 4.0° ugana <11-20> ±0.5° (4H-N); Umurongo utari hagati y'umurongo: <0001> ±0.5° (4H-SI)
Ubucucike bw'imiyoboro mito 4H‑N ≤ 0.2 cm⁻² ≤ 2 cm⁻² ≤ 15 cm⁻²
Ubucucike bw'imiyoboro mito 4H‑SI ≤ 1 cm⁻² ≤ 5 cm⁻² ≤ 15 cm⁻²
Ubushobozi bwo kwirinda 4H‑N 0.015–0.024 Ω·cm 0.015–0.028 Ω·cm 0.015–0.028 Ω·cm
Ubushobozi bwo kwirinda 4H‑SI ≥ 1 × 10¹⁰ Ω·cm ≥ 1 × 10⁵ Ω·cm  
Icyerekezo cy'ibanze cy'ubugari   [10-10] ± 5.0° [10-10] ± 5.0° [10-10] ± 5.0°
Uburebure bw'ibanze bw'ikiraro 4H‑N 47.5 mm ± 2.0 mm    
Uburebure bw'ibanze bw'ikiraro 4H‑SI Notch    
Kutagaragaza Edge     mm 3  
Umuheto/LTV/TTV/Umuheto   ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm  
Ubukana Igipolonye Ra ≤ 1 nm    
Ubukana CMP Ra ≤ 0.2 nm   Ra ≤ 0.5 nm
Uduce tw'inkombe   Nta na kimwe   Uburebure bw'umubumbe ≤ mm 20, imwe ≤ mm 2
Amasahani ya Hex   Agace k'ikusanyirizo ≤ 0.05% Agace k'ikusanyirizo ≤ 0.1% Agace k'ikusanyirizo ≤ 1%
Uduce twa Polytype   Nta na kimwe Agace k'ikusanyirizo ≤ 3% Agace k'ikusanyirizo ≤ 3%
Ibikubiye muri karuboni   Agace k'ikusanyirizo ≤ 0.05%   Agace k'ikusanyirizo ≤ 3%
Imikufi yo hejuru   Nta na kimwe   Uburebure buhuriweho ≤ 1 × umurambararo wa wafer
Udupira two mu mucanga   Nta na kimwe cyemewe ≥ ubugari n'ubujyakuzimu bwa mm 0.2   Ibice bigera kuri 7, ≤ mm 1 buri kimwe
TSD (Guhindura Imigozi)   ≤ cm 500⁻²   Ntabyo
BPD (Guhinduka k'Umuyoboro w'Ishingiro)   ≤ 1000 cm⁻²   Ntabyo
Kwanduza ubuso   Nta na kimwe    
Gupfunyika   Kaseti ifite wafer nyinshi cyangwa agasanduku kamwe k'wafer Kaseti ifite wafer nyinshi cyangwa agasanduku kamwe k'wafer Kaseti ifite wafer nyinshi cyangwa agasanduku kamwe k'wafer

Urupapuro rw'amakuru rwa SiC wafer yo mu bwoko bwa 4H-N rwa santimetero 4

 

Urupapuro rw'amakuru rwa SiC wafer ya santimetero 4
Igipimo Nta musaruro wa MPD Icyiciro Gisanzwe cy'Umusaruro (Icyiciro cya P) Icyiciro cy'indorerwamo (Icyiciro cya D)
Ingano 99.5 mm–100.0 mm
Ubunini (4H-N) 350 µm±15 µm   350 µm±25 µm
Ubunini (4H-Si) 500 µm±15 µm   500 µm±25 µm
Icyerekezo cya Wafer Umurongo utari hagati y'umuyoboro: 4.0° ugana <1120> ± 0.5° kuri 4H-N; Kuri 4H-Si: <0001> ± 0.5°    
Ubucucike bw'imiyoboro mito (4H-N) ≤0.2 cm⁻² ≤2 cm⁻² ≤15 cm⁻²
Ubucucike bwa mikoropi (4H-Si) ≤1 cm⁻² ≤5 cm⁻² ≤15 cm⁻²
Ubushobozi bwo kwirinda (4H-N)   0.015–0.024 Ω·cm 0.015–0.028 Ω·cm
Ubushobozi bwo kwirinda (4H-Si) ≥1E10 Ω·cm   ≥1E5 Ω·cm
Icyerekezo cy'ibanze cy'ubugari   [10-10] ±5.0°  
Uburebure bw'ibanze bw'ikiraro   mm 32.5 ± mm 2.0  
Uburebure bwa kabiri bw'ikiraro   18.0 mm ± 2.0 mm  
Icyerekezo cya kabiri cy'icyitegererezo   Silicon ireba hejuru: 90° CW uvuye kuri prime flat ± 5.0°  
Kutagaragaza Edge   mm 3  
LTV/TTV/Umuheto ≤2.5 µm / ≤5 µm / ≤15 µm / ≤30 µm   ≤10 µm / ≤15 µm / ≤25 µm / ≤40 µm
Ubukana Ra ya Polonye ≤1 nm; CMP Ra ≤0.2 nm   Ra ≤0.5 nm
Imyanya y'inkombe iterwa n'urumuri rwinshi Nta na kimwe Nta na kimwe Uburebure buhuriweho ≤10 mm; uburebure bumwe ≤2 mm
Amasahani ya Hex ashingiye ku rumuri rwinshi Agace k'ikusanyirizo ≤0.05% Agace k'ikusanyirizo ≤0.05% Agace k'ikusanyirizo ≤0.1%
Uduce twa Polytype dukoresheje urumuri rwinshi Nta na kimwe   Agace k'ikusanyirizo ≤3%
Ibikubiye muri karuboni igaragara Agace k'ikusanyirizo ≤0.05%   Agace k'ikusanyirizo ≤3%
Imiterere y'ubuso bwa Silicone iterwa n'urumuri rwinshi Nta na kimwe   Uburebure buhuriweho ≤1 umurambararo wa wafer
Udupira tw'inkombe dukoresheje urumuri rwinshi Nta na kimwe cyemewe ubugari n'ubujyakuzimu bwa ≥0.2 mm   5 byemewe, ≤1 mm buri kimwe
Kwanduzwa n'urumuri rwinshi rwa silicon Nta na kimwe    
Guhindura vis mu ruziga ≤500 cm⁻² Ntabyo  
Gupfunyika Kaseti ifite wafer nyinshi cyangwa agasanduku kamwe k'wafer Kaseti ifite wafer nyinshi cyangwa agasanduku kamwe k'wafer Kaseti ifite wafer nyinshi cyangwa agasanduku kamwe k'wafer

Urupapuro rw'amakuru rwa SiC wafer yo mu bwoko bwa HPSI rwa santimetero 4

 

Urupapuro rw'amakuru rwa SiC wafer yo mu bwoko bwa HPSI rwa santimetero 4
Igipimo Ingano y'umusaruro wa MPD ntarengwa (Ingano ya Z) Icyiciro Gisanzwe cy'Umusaruro (Icyiciro cya P) Icyiciro cy'indorerwamo (Icyiciro cya D)
Ingano   99.5–100.0 mm  
Ubunini (4H-Si) 500 µm ±20 µm   500 µm ±25 µm
Icyerekezo cya Wafer Umurongo utari hagati y'umuyoboro: 4.0° ugana <11-20> ± 0.5° kuri 4H-N; Kuri 4H-Si: <0001> ± 0.5°
Ubucucike bwa mikoropi (4H-Si) ≤1 cm⁻² ≤5 cm⁻² ≤15 cm⁻²
Ubushobozi bwo kwirinda (4H-Si) ≥1E9 Ω·cm   ≥1E5 Ω·cm
Icyerekezo cy'ibanze cy'ubugari (10-10) ± 5.0°
Uburebure bw'ibanze bw'ikiraro mm 32.5 ± mm 2.0
Uburebure bwa kabiri bw'ikiraro 18.0 mm ± 2.0 mm
Icyerekezo cya kabiri cy'icyitegererezo Silicon ireba hejuru: 90° CW uvuye kuri prime flat ± 5.0°
Kutagaragaza Edge   mm 3  
LTV/TTV/Umuheto ≤3 µm / ≤5 µm / ≤15 µm / ≤30 µm   ≤10 µm / ≤15 µm / ≤25 µm / ≤40 µm
Ubukana (isura ya C) Igipolonye Ra ≤1 nm  
Ubukana (isura ya Si) CMP Ra ≤0.2 nm Ra ≤0.5 nm
Imyanya y'inkombe iterwa n'urumuri rwinshi Nta na kimwe   Uburebure buhuriweho ≤10 mm; uburebure bumwe ≤2 mm
Amasahani ya Hex ashingiye ku rumuri rwinshi Agace k'ikusanyirizo ≤0.05% Agace k'ikusanyirizo ≤0.05% Agace k'ikusanyirizo ≤0.1%
Uduce twa Polytype dukoresheje urumuri rwinshi Nta na kimwe   Agace k'ikusanyirizo ≤3%
Ibikubiye muri karuboni igaragara Agace k'ikusanyirizo ≤0.05%   Agace k'ikusanyirizo ≤3%
Imiterere y'ubuso bwa Silicone iterwa n'urumuri rwinshi Nta na kimwe   Uburebure buhuriweho ≤1 umurambararo wa wafer
Udupira tw'inkombe dukoresheje urumuri rwinshi Nta na kimwe cyemewe ubugari n'ubujyakuzimu bwa ≥0.2 mm   5 byemewe, ≤1 mm buri kimwe
Kwanduzwa n'urumuri rwinshi rwa silicon Nta na kimwe   Nta na kimwe
Guhindura Screw mu Migozi ≤500 cm⁻² Ntabyo  
Gupfunyika   Kaseti ifite wafer nyinshi cyangwa agasanduku kamwe k'wafer  

Gukoresha SiC wafer

 

  • Modules z'amashanyarazi za SiC Wafer kuri EV Inverters
    MOSFET na diode zishingiye kuri SiC wafer zishingiye kuri substrates nziza za SiC wafer zitanga igihombo cyo guhinduranya gike cyane. Binyuze mu ikoranabuhanga rya SiC wafer, izi modules z'amashanyarazi zikora ku muvuduko mwinshi w'amashanyarazi n'ubushyuhe, bigatuma inverters zikora neza. Gushyiramo SiC wafer mu byiciro by'amashanyarazi bigabanya ibisabwa mu gukonjesha no mu mwanya wabyo, bigaragaza ubushobozi bwose bw'udushya twa SiC wafer.

  • Ibikoresho bya RF na 5G byihuta cyane kuri SiC Wafer
    Amplifiers za RF na switch zakozwe kuri platform za SiC wafer zirinda ubushyuhe zigaragaza amashanyarazi menshi kandi zigabanya ubushyuhe. Substrate ya SiC wafer igabanya igihombo cya dielectric kuri frequency za GHz, mu gihe imbaraga za SiC wafer zituma ikora neza mu gihe cy’ubushyuhe bwinshi—bituma SiC wafer iba substrate ikundwa cyane na sitasiyo za 5G na sisitemu za radar zo mu cyiciro gikurikira.

  • Ibyuma bya optoelectronic na LED biva muri SiC Wafer
    Uduce twa LED tw’ubururu na UV duhingwa kuri SiC wafer substrates twungukira ku guhuza neza utwuma no gukwirakwiza ubushyuhe. Gukoresha C-face SiC wafer irabagirana bituma habaho imiterere imwe ya epitaxial, mu gihe ubukana bwa SiC wafer butuma wafer igabanya ubukana kandi ipfunyike neza. Ibi bituma SiC wafer iba urubuga rwo gukoresha LED ikora neza kandi iramba.

Ibibazo n'Ibisubizo bya SiC wafer

1. Q: Ni gute SiC wafers zikorwa?


A:

Udupaki twa SiC twakozweIntambwe zirambuye

  1. Uduce twa SiCGutegura ibikoresho fatizo

    • Koresha ifu ya SiC yo mu bwoko bwa ≥5N (umwanda ≤1 ppm).
    • Shyiraho urusenda hanyuma uteke mbere kugira ngo ukureho ibisigazwa bya karuboni cyangwa azote.

  1. SiCGutegura imbuto za kristu

    • Fata agace ka kristalo imwe ya 4H-SiC, ukate ukurikije icyerekezo cya 〈0001〉 kugeza kuri ~10 × 10 mm².

    • Gushushanya neza kuri Ra ≤0.1 nm no gushyira ikimenyetso ku cristal.

  2. SiCGukura kwa PVT (Gutwara umwuka ushyushye)

    • Shyiramo icyuma gishyushya girafu: hasi hashyirwamo ifu ya SiC, hejuru hashyirwamo kristu y'imbuto.

    • Himura kugeza kuri 10⁻³–10⁻⁵ Torr cyangwa ushyiremo helium ifite ubuziranenge bwinshi kuri 1 atm.

    • Shyushya agace gaturukamo kugeza kuri 2100–2300 ℃, komeza agace k'imbuto gakonjeshe 100–150 ℃.

    • Genzura igipimo cy'izamuka rya 1–5 mm/h kugira ngo uhuze ubwiza n'umusaruro.

  3. SiCIngot Annealing

    • Shyira ingot ya SiC ikuze ku bushyuhe bwa 1600–1800 ℃ mu gihe cy'amasaha 4–8.

    • Intego: kugabanya ubushyuhe no kugabanya ubucucike bw'ihindagurika ry'ikirere.

  4. SiCGukata Wafer

    • Koresha urukero rw'insinga ya diyama kugira ngo ukate ingot mo uduce twa wafer dufite ubugari bwa mm 0.5–1.

    • Gabanya imbaraga zo guhindagura no ku ruhande kugira ngo wirinde uduce duto tw’ingufu.

  5. SiCWaferiGusya no Gusukura

    • Gusya cyanegukuraho ibyangiritse mu gukata (ubukana ~ 10–30 µm).

    • Gusya nezakugira ngo ugere ku buringanire bungana na ≤5 µm.

    • Gusukura hakoreshejwe imiti (CMP)kugera ku iherezo rimeze nk'iry'indorerwamo (Ra ≤0.2 nm).

  6. SiCWaferiIsuku n'igenzura

    • Gusukura hakoreshejwe ikoranabuhanga rya Ultrasonicmuri Piranha igisubizo (H₂SO₄: H₂O₂), amazi ya DI, hanyuma IPA.

    • XRD/Raman spectroscopykwemeza ubwoko bwa polytype (4H, 6H, 3C).

    • Interferometrikegupima ubugari (<5 µm) n'ubugari (<20 µm).

    • Iperereza ry'ingingo enyegupima ubushobozi bwo guhangana n'ingufu (urugero: HPSI ≥10⁹ Ω·cm).

    • Igenzura ry'ibitagenda nezamunsi ya mikorosikopi y'urumuri rwa polarized hamwe n'icyuma gipima imikurire.

  7. SiCWaferiGushyira mu byiciro no gutondeka

    • Shyiraho uduce duto dukurikije ubwoko bwa polytype n'ubwoko bw'amashanyarazi:

      • Ubwoko bwa 4H-SiC N (4H-N): igipimo cy'umutwaro 10¹⁶–10¹⁸ cm⁻³

      • 4H-SiC High Purity Semi-Insulation (4H-HPSI): resistivity ≥10⁹ Ω·cm

      • Ubwoko bwa 6H-SiC N (6H-N)

      • Izindi: 3C-SiC, P-type, n'izindi.

  8. SiCWaferiGupakira no Kohereza

    • Shyira mu dusanduku tw'isukari dusukuye kandi tudafite ivumbi.

    • Shyira ikimenyetso kuri buri gasanduku ukoresheje umurambararo, ubunini, ubwoko bwa polytype, urwego rwo kugabanya ubukana, n'umubare w'itsinda.

      Uduce twa SiC

2. Q: Ni izihe nyungu z'ingenzi za wafer za SiC ugereranyije na wafer za silicon?


A: Ugereranije na wafer za silicon, wafer za SiC zituma:

  • Imikorere y'amashanyarazi menshi(>1.200 V) ifite ubushobozi bwo kudakora neza.

  • Ubushyuhe bwinshi burahamye(>300 °C) no kunoza imicungire y'ubushyuhe.

  • Umuvuduko wihuta wo guhinduranyahamwe n'igihombo gito cyo guhinduranya, bigabanya ubukonje n'ingano y'ibikoresho bihindura ingufu mu buryo bwa sisitemu.

4. Q: Ni izihe nenge zikunze kugira ingaruka ku musaruro wa SiC wafer n'imikorere yayo?


A: Inenge z'ibanze mu miyoboro ya SiC zirimo imiyoboro mito, kwimuka kw'imiyoboro y'imbere (BPDs), no gushwanyagurika k'ubuso. Imiyoboro mito ishobora gutera ikibazo gikomeye ku bikoresho; BPDs ziyongera ubushobozi bwo kwirinda uko igihe kigenda gihita; kandi gushwanyagurika k'ubuso bigatuma imiyoboro ya SiC icika cyangwa gukura nabi mu gice cya epitaxial. Bityo rero, kugenzura neza no kugabanya inenge ni ngombwa kugira ngo umusaruro wa SiC wafer urusheho kuba mwiza.

Igihe cyo kohereza: 30 Kamena-2025
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