SiC wafer
Wafers ya silicon karbide (SiC) yahindutse substrate yo guhitamo ingufu nyinshi, inshuro nyinshi, hamwe nubushyuhe bwo hejuru bwa elegitoroniki mumashanyarazi, ingufu zishobora kongera ingufu, hamwe nindege. Inshingano zacu zirimo polytypes zingenzi hamwe na gahunda ya doping - azote-yuzuye 4H (4H-N), isuku-y-igice cyinshi (HPSI), azote-yuzuye 3C (3C-N), hamwe na p-4H / 6H (4H / 6H-P) - yatanzwe mu byiciro bitatu byujuje ubuziranenge: PRIME (yuzuye neza, yuzuye ibikoresho) UBUSHAKASHATSI (epi igizwe na profili ya doping ya R&D). Ibipimo bya Wafer bingana na 2 ″, 4 ″, 6 ″, 8 ″, na 12 ″ kugirango bikwiranye nibikoresho byumurage hamwe na fab zateye imbere. Dutanga kandi monocrystalline boules hamwe na kristu yimbuto yerekanwe neza kugirango dushyigikire murugo.
Wafers yacu ya 4H-N iragaragaza ubucucike bwabatwara kuva kuri 1 × 10¹⁶ kugeza kuri 1 × 10¹⁹ cm⁻³ hamwe no guhangana na 0.01-10 Ω · cm, bigatanga moteri nziza ya elegitoronike no kumeneka hejuru ya 2 MV / cm - nibyiza kuri diode ya Schottky, MOSFETs, na JFETs. HPSI insimburangingo irenga 1 × 10¹² Ω · cm irwanya ubukana bwa micropipe munsi ya 0.1 cm⁻², bigatuma imyuka ntoya ya RF na microwave. Cubic 3C-N, iboneka muburyo bwa 2 ″ na 4 ″, ituma heteroepitaxy kuri silicon kandi ishyigikira porogaramu ya Photonic na MEMS. P-ubwoko bwa 4H / 6H-P wafer, yometse kuri aluminium kugeza kuri 1 × 10¹⁶ - 5 × 10¹⁸ cm⁻³, byorohereza ibikoresho byubaka.
PRIME wafers ikorerwa imiti-yubukanishi kuri <0.2 nm RMS yubuso bwubuso, ubunini bwuzuye butandukana munsi ya 3 µm, kandi umuheto <10 µm. DUMMY substrate yihutisha guteranya no gupakira, mugihe wafers YUBUSHAKASHATSI igaragaramo epi-layer yuburebure bwa 2-30 µm na doping bespoke. Ibicuruzwa byose byemejwe na X-ray itandukanya (gutondeka umurongo <30 arcsec) hamwe na Raman spectroscopy, hamwe nibizamini byamashanyarazi - gupima Hall, kwerekana imyirondoro ya C - V, no gusikana micropipe - byemeza JEDEC na SEMI kubahiriza.
Boules igera kuri mm 150 ya diametre ikura hifashishijwe PVT na CVD hamwe nubucucike buri munsi ya cm 1 × 10³ cm na micropipe nkeya. Imbuto za kristu zaciwe muri 0.1 ° ya c-axis kugirango zemeze gukura kwororoka no gutanga umusaruro mwinshi.
Muguhuza polytypes nyinshi, doping variants, amanota meza, ingano ya wafer, hamwe nu nzu ya boule hamwe nimbuto-kristu, urubuga rwacu rwa SiC rwerekana iminyururu itanga kandi byihutisha iterambere ryibikoresho kubinyabiziga byamashanyarazi, imiyoboro yubwenge, hamwe nibidukikije bikabije.
SiC wafer
Wafers ya silicon karbide (SiC) yahindutse substrate yo guhitamo ingufu nyinshi, inshuro nyinshi, hamwe nubushyuhe bwo hejuru bwa elegitoroniki mumashanyarazi, ingufu zishobora kongera ingufu, hamwe nindege. Inshingano zacu zirimo polytypes zingenzi hamwe na gahunda ya doping - azote-yuzuye 4H (4H-N), isuku-y-igice cyinshi (HPSI), azote-yuzuye 3C (3C-N), hamwe na p-4H / 6H (4H / 6H-P) - yatanzwe mu byiciro bitatu byujuje ubuziranenge: PRIME (yuzuye neza, yuzuye ibikoresho) UBUSHAKASHATSI (epi igizwe na profili ya doping ya R&D). Ibipimo bya Wafer bingana na 2 ″, 4 ″, 6 ″, 8 ″, na 12 ″ kugirango bikwiranye nibikoresho byumurage hamwe na fab zateye imbere. Dutanga kandi monocrystalline boules hamwe na kristu yimbuto yerekanwe neza kugirango dushyigikire murugo.
Wafers yacu ya 4H-N iragaragaza ubucucike bwabatwara kuva kuri 1 × 10¹⁶ kugeza kuri 1 × 10¹⁹ cm⁻³ hamwe no guhangana na 0.01-10 Ω · cm, bigatanga moteri nziza ya elegitoronike no kumeneka hejuru ya 2 MV / cm - nibyiza kuri diode ya Schottky, MOSFETs, na JFETs. HPSI insimburangingo irenga 1 × 10¹² Ω · cm irwanya ubukana bwa micropipe munsi ya 0.1 cm⁻², bigatuma imyuka ntoya ya RF na microwave. Cubic 3C-N, iboneka muburyo bwa 2 ″ na 4 ″, ituma heteroepitaxy kuri silicon kandi ishyigikira porogaramu ya Photonic na MEMS. P-ubwoko bwa 4H / 6H-P wafer, yometse kuri aluminium kugeza kuri 1 × 10¹⁶ - 5 × 10¹⁸ cm⁻³, byorohereza ibikoresho byubaka.
PRIME wafers ikorerwa imiti-yubukanishi kuri <0.2 nm RMS yubuso bwubuso, ubunini bwuzuye butandukana munsi ya 3 µm, kandi umuheto <10 µm. DUMMY substrate yihutisha guteranya no gupakira, mugihe wafers YUBUSHAKASHATSI igaragaramo epi-layer yuburebure bwa 2-30 µm na doping bespoke. Ibicuruzwa byose byemejwe na X-ray itandukanya (gutondeka umurongo <30 arcsec) hamwe na Raman spectroscopy, hamwe nibizamini byamashanyarazi - gupima Hall, kwerekana imyirondoro ya C - V, no gusikana micropipe - byemeza JEDEC na SEMI kubahiriza.
Boules igera kuri mm 150 ya diametre ikura hifashishijwe PVT na CVD hamwe nubucucike buri munsi ya cm 1 × 10³ cm na micropipe nkeya. Imbuto za kristu zaciwe muri 0.1 ° ya c-axis kugirango zemeze gukura kwororoka no gutanga umusaruro mwinshi.
Muguhuza polytypes nyinshi, doping variants, amanota meza, ingano ya wafer, hamwe nu nzu ya boule hamwe nimbuto-kristu, urubuga rwacu rwa SiC rwerekana iminyururu itanga kandi byihutisha iterambere ryibikoresho kubinyabiziga byamashanyarazi, imiyoboro yubwenge, hamwe nibidukikije bikabije.
Ifoto ya SiC wafer
6inch 4H-N andika urupapuro rwamakuru ya SiC wafer
| 6inch SiC wafers urupapuro rwamakuru | ||||
| Parameter | Sub-Parameter | Z Icyiciro | Icyiciro | D Icyiciro |
| Diameter | 149.5–150.0 mm | 149.5–150.0 mm | 149.5–150.0 mm | |
| Umubyimba | 4H - N. | 350 µm ± 15 µm | 350 µm ± 25 µm | 350 µm ± 25 µm |
| Umubyimba | 4H - SI | 500 µm ± 15 µm | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Icyerekezo cya Wafer | Off axis: 4.0 ° yerekeza kuri <11-20> ± 0.5 ° (4H-N); Ku murongo: <0001> ± 0.5 ° (4H-SI) | Off axis: 4.0 ° yerekeza kuri <11-20> ± 0.5 ° (4H-N); Ku murongo: <0001> ± 0.5 ° (4H-SI) | Off axis: 4.0 ° yerekeza kuri <11-20> ± 0.5 ° (4H-N); Ku murongo: <0001> ± 0.5 ° (4H-SI) | |
| Ubucucike bwa Micropipe | 4H - N. | ≤ 0.2 cm⁻² | Cm 2 cm⁻² | ≤ 15 cm⁻² |
| Ubucucike bwa Micropipe | 4H - SI | Cm 1 cm⁻² | Cm 5 cm⁻² | ≤ 15 cm⁻² |
| Kurwanya | 4H - N. | 0.015–0.024 Ω · cm | 0.015–0.028 Ω · cm | 0.015–0.028 Ω · cm |
| Kurwanya | 4H - SI | ≥ 1 × 10¹⁰ Ω · cm | ≥ 1 × 10⁵ Ω · cm | |
| Icyerekezo Cyibanze | [10-10] ± 5.0 ° | [10-10] ± 5.0 ° | [10-10] ± 5.0 ° | |
| Uburebure bwibanze | 4H - N. | 47.5 mm ± 2,2 mm | ||
| Uburebure bwibanze | 4H - SI | Ikimenyetso | ||
| Guhezwa | Mm 3 | |||
| Intambara / LTV / TTV / Umuheto | ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm | ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm | ||
| Ubugome | Igipolonye | Ra ≤ 1 nm | ||
| Ubugome | CMP | Ra ≤ 0.2 nm | Ra ≤ 0.5 nm | |
| Impera | Nta na kimwe | Uburebure bwa mm 20 mm, imwe ≤ 2 mm | ||
| Isahani | Agace kegeranye ≤ 0.05% | Agace kegeranye ≤ 0.1% | Agace kegeranye ≤ 1% | |
| Uturere twa polytype | Nta na kimwe | Agace kegeranye ≤ 3% | Agace kegeranye ≤ 3% | |
| Carbone | Agace kegeranye ≤ 0.05% | Agace kegeranye ≤ 3% | ||
| Igishushanyo cyo hejuru | Nta na kimwe | Uburebure bwuzuye ≤ 1 × wafer diameter | ||
| Imipira | Ntanumwe wemerewe ≥ 0.2 mm ubugari & ubujyakuzimu | Kugera kuri 7 chip, mm 1 mm imwe imwe | ||
| TSD (Gutandukanya insanganyamatsiko) | ≤ 500 cm⁻² | N / A. | ||
| BPD (Gusiba Indege Base) | Cm 1000 cm⁻² | N / A. | ||
| Kwanduza Ubuso | Nta na kimwe | |||
| Gupakira | Cassette ya Multi-wafer cyangwa ikintu kimwe cya wafer | Cassette ya Multi-wafer cyangwa ikintu kimwe cya wafer | Cassette ya Multi-wafer cyangwa ikintu kimwe cya wafer | |
4inch 4H-N andika urupapuro rwamakuru ya SiC wafer
| 4inch SiC wafer urupapuro rwamakuru | |||
| Parameter | Umusaruro wa MPD Zeru | Icyiciro cy'umusaruro usanzwe (P Grade) | Icyiciro cya Dummy (D Grade) |
| Diameter | 99,5 mm - 100.0 mm | ||
| Umubyimba (4H-N) | 350 µm ± 15 µm | 350 µm ± 25 µm | |
| Umubyimba (4H-Si) | 500 µm ± 15 µm | 500 µm ± 25 µm | |
| Icyerekezo cya Wafer | Off axis: 4.0 ° yerekeza kuri <1120> ± 0.5 ° kuri 4H-N; Ku murongo: <0001> ± 0.5 ° kuri 4H-Si | ||
| Ubucucike bwa Micropipe (4H-N) | ≤0.2 cm⁻² | ≤2 cm⁻² | ≤15 cm⁻² |
| Ubucucike bwa Micropipe (4H-Si) | ≤1 cm⁻² | ≤5 cm⁻² | ≤15 cm⁻² |
| Kurwanya (4H-N) | 0.015–0.024 Ω · cm | 0.015–0.028 Ω · cm | |
| Kurwanya (4H-Si) | ≥1E10 Ω · cm | ≥1E5 Ω · cm | |
| Icyerekezo Cyibanze | [10-10] ± 5.0 ° | ||
| Uburebure bwibanze | 32,5 mm ± 2,2 mm | ||
| Uburebure bwa kabiri | 18.0 mm ± 2,2 mm | ||
| Icyerekezo cya kabiri cya Flat | Silicon ireba hejuru: 90 ° CW uhereye kumurongo wambere ± 5.0 ° | ||
| Guhezwa | Mm 3 | ||
| LTV / TTV / Umuheto | ≤2.5 µm / ≤5 µm / ≤15 µm / ≤30 µm | ≤10 µm / ≤15 µm / ≤25 µm / ≤40 µm | |
| Ubugome | Igipolonye Ra ≤1 nm; CMP Ra ≤0.2 nm | Ra ≤0.5 nm | |
| Impande Zimenetse Kumucyo mwinshi | Nta na kimwe | Nta na kimwe | Uburebure bwa mm10 mm; uburebure bumwe mm2 mm |
| Isahani ya Hex Kumucyo mwinshi | Agace kegeranye ≤0.05% | Agace kegeranye ≤0.05% | Agace kegeranye ≤0.1% |
| Uturere twa Polytype Kumucyo mwinshi | Nta na kimwe | Agace kegeranye ≤3% | |
| Amashusho ya Carbone | Agace kegeranye ≤0.05% | Agace kegeranye ≤3% | |
| Igishushanyo cya Silicon Igishushanyo Cyinshi Cyumucyo | Nta na kimwe | Uburebure bwuzuye ≤1 wafer diameter | |
| Imipira yimpande yumucyo mwinshi | Nta numwe wemereye ≥0.2 mm z'ubugari n'uburebure | 5 byemewe, mm1 mm imwe imwe | |
| Ubuso bwa Silicon Yanduye Kumucyo mwinshi | Nta na kimwe | ||
| Gutandukanya imigozi | ≤500 cm⁻² | N / A. | |
| Gupakira | Cassette ya Multi-wafer cyangwa ikintu kimwe cya wafer | Cassette ya Multi-wafer cyangwa ikintu kimwe cya wafer | Cassette ya Multi-wafer cyangwa ikintu kimwe cya wafer |
4inch HPSI andika urupapuro rwamakuru ya SiC wafer
| 4inch HPSI andika urupapuro rwamakuru ya SiC wafer | |||
| Parameter | Impamyabumenyi ya Zeru MPD (Z Grade) | Icyiciro cy'umusaruro usanzwe (P Grade) | Icyiciro cya Dummy (D Grade) |
| Diameter | 99.5–100.0 mm | ||
| Umubyimba (4H-Si) | 500 µm ± 20 µm | 500 µm ± 25 µm | |
| Icyerekezo cya Wafer | Off axis: 4.0 ° yerekeza kuri <11-20> ± 0.5 ° kuri 4H-N; Ku murongo: <0001> ± 0.5 ° kuri 4H-Si | ||
| Ubucucike bwa Micropipe (4H-Si) | ≤1 cm⁻² | ≤5 cm⁻² | ≤15 cm⁻² |
| Kurwanya (4H-Si) | ≥1E9 Ω · cm | ≥1E5 Ω · cm | |
| Icyerekezo Cyibanze | (10-10) ± 5.0 ° | ||
| Uburebure bwibanze | 32,5 mm ± 2,2 mm | ||
| Uburebure bwa kabiri | 18.0 mm ± 2,2 mm | ||
| Icyerekezo cya kabiri cya Flat | Silicon ireba hejuru: 90 ° CW uhereye kumurongo wambere ± 5.0 ° | ||
| Guhezwa | Mm 3 | ||
| LTV / TTV / Umuheto | ≤3 µm / ≤5 µm / ≤15 µm / ≤30 µm | ≤10 µm / ≤15 µm / ≤25 µm / ≤40 µm | |
| Ubukonje (C isura) | Igipolonye | Ra ≤1 nm | |
| Ubukonje (Si face) | CMP | Ra ≤0.2 nm | Ra ≤0.5 nm |
| Impande Zimenetse Kumucyo mwinshi | Nta na kimwe | Uburebure bwa mm10 mm; uburebure bumwe mm2 mm | |
| Isahani ya Hex Kumucyo mwinshi | Agace kegeranye ≤0.05% | Agace kegeranye ≤0.05% | Agace kegeranye ≤0.1% |
| Uturere twa Polytype Kumucyo mwinshi | Nta na kimwe | Agace kegeranye ≤3% | |
| Amashusho ya Carbone | Agace kegeranye ≤0.05% | Agace kegeranye ≤3% | |
| Igishushanyo cya Silicon Igishushanyo Cyinshi Cyumucyo | Nta na kimwe | Uburebure bwuzuye ≤1 wafer diameter | |
| Imipira yimpande yumucyo mwinshi | Nta numwe wemereye ≥0.2 mm z'ubugari n'uburebure | 5 byemewe, mm1 mm imwe imwe | |
| Ubuso bwa Silicon Yanduye Kumucyo mwinshi | Nta na kimwe | Nta na kimwe | |
| Gutandukanya imirongo | ≤500 cm⁻² | N / A. | |
| Gupakira | Cassette ya Multi-wafer cyangwa ikintu kimwe cya wafer | ||
Igihe cyo kohereza: Jun-30-2025