Udupira twa SOI (Silicon-On-Insulator)igaragaza ibikoresho byihariye bya semiconductor bifite urwego rwa silikoni rworoshye cyane rwakozwe hejuru y'urwego rwa okiside irinda ubushyuhe. Iyi miterere idasanzwe ya sandwich itanga umusaruro ukomeye ku bikoresho bya semiconductor.
Imiterere y'imiterere:
Icyiciro cy'ibikoresho (Silicon yo hejuru):
Ubunini buri hagati ya nanometero nyinshi na mikorometero, bukora nk'urwego rukora rwo gukora transistor.
Urupapuro rwa Okiside rwashyinguwe (AGASANDUKU):
Urukuta rw'icyuma gikingira lisansi ya silikoni (ubugari bwa 0.05-15μm) rutandukanya urwego rw'igikoresho n'urukuta rw'icyuma n'amashanyarazi.
Igice cy'ibanze:
Silikoni nini (ubugari bwa 100-500μm) itanga inkunga ya mekanike.
Dukurikije ikoranabuhanga ryo gutegura, inzira zikoreshwa cyane mu gutunganya SOI silicon wafers zishobora gushyirwa mu byiciro bikurikira: SIMOX (ikoranabuhanga ryo gusiga umwuka), BESOI (ikoranabuhanga ryo gufungana), na Smart Cut (ikoranabuhanga ryo gukata mu buryo bw'ubwenge).
SIMOX (ikoranabuhanga ryo kwimura umwuka wa ogisijeni) ni uburyo bukoresha gushyira iyoni za ogisijeni zikoresha ingufu nyinshi mu duce twa silicone kugira ngo hakorwe urwego rwa silicon dioxide, hanyuma rushyirwa mu bushyuhe bwinshi kugira ngo hakorwe inenge zo mu duce. Igice cy'imbere ni inshinge za ogisijeni zikoresha iyoni kugira ngo hakorwe ogisijeni y'urwego rwabitswe.
BESOI (ikoranabuhanga ryo gukurura uduce duto tw’ibumba) rikubiyemo guhuza uduce tubiri twa silikoni hanyuma tugacukura kimwe muri byo binyuze mu gusya no gukata imiti kugira ngo habeho imiterere ya SOI. Ishingiro riri mu guhuza no gucukura uduce duto.
Smart Cut (ikoranabuhanga rya Intelligent Exfoliation) ikora urwego rwo gukuraho ururenda binyuze mu gutera iyoni ya hydrogen. Nyuma yo gufatana, hakorwa ubushyuhe kugira ngo hasohorwe ururenda rwa silicon runyuze ku rundi rurenda rwa hydrogen ion, hagakorwa urwego rwa silicon rworoshye cyane. Igice cy'ibanze ni hydrogen injection stripping.
Ubu, hari irindi koranabuhanga rizwi nka SIMBOND (ikoranabuhanga ryo guhuza umwuka wa ogisijeni), ryakozwe na Xinao. Mu by'ukuri, ni inzira ihuza uburyo bwo gushyira umwuka wa ogisijeni mu buryo butandukanye n'ikoranabuhanga ryo guhuza. Muri ubu buryo bwa tekiniki, umwuka wa ogisijeni ushyirwa mu buryo butandukanye ukoreshwa nk'urwego rwo kugabanya ubushyuhe, kandi urwego nyarwo rwa ogisijeni rushyirwa mu buryo butandukanye ni urwego rwo kugabanya ubushyuhe. Kubwibyo, binoza icyarimwe ibipimo nko kuba silicon yo hejuru ingana n'ubwiza bw'urwego rwa ogisijeni rushyizwe mu buryo butandukanye.
Udupira twa silikoni twa SOI twakozwe n'inzira zitandukanye za tekiniki dufite ibipimo bitandukanye by'imikorere kandi birakwiriye gukoreshwa mu bihe bitandukanye.
Dore imbonerahamwe y'incamake y'ibyiza by'ingenzi by'imikoreshereze ya silicon wafers za SOI, hamwe n'imikorere yazo ya tekiniki n'uburyo ikoreshwa. Ugereranyije na silicon isanzwe, SOI ifite inyungu zikomeye mu kuringaniza umuvuduko n'ikoreshwa ry'ingufu. (PS: Imikorere ya 22nm FD-SOI iri hafi y'iya FinFET, kandi ikiguzi cyagabanutseho 30%.)
| Akamaro k'Imikorere | Ihame rya tekiniki | Igaragaza ryihariye | Ingero zisanzwe z'ikoreshwa |
| Ubushobozi buke bwo gukwirakwiza ibicurane | Udukingirizo tw'urukiramende (BOX) duhuza amashanyarazi hagati y'igikoresho n'ubutaka | Umuvuduko wo guhinduranya wiyongereyeho 15%-30%, ikoreshwa ry'ingufu rigabanukaho 20%-50% | 5G RF, Udupapuro tw'itumanaho twihuta cyane |
| Kugabanuka k'umuyoboro w'amazi usohoka | Insulation layer igabanya inzira z'amazi zisohoka | Umuriro w'amazi uva wagabanutseho >90%, igihe cyo kumara bateri kigakomeza | Ibikoresho bya IoT, ibikoresho by'ikoranabuhanga byambarwa |
| Ubukomere bw'imirasire yongerewe | Insulation layer ibuza ubwiyongere bw'amashanyarazi buterwa n'imirasire | Ubushobozi bwo kwihanganira imirasire bwazamutse inshuro 3-5, bugabanya ingaruka zo guhindagurika kw'ibintu rimwe gusa | Ibyogajuru, Ibikoresho by'inganda za kirimbuzi |
| Kugenzura Ingaruka z'Imiyoboro Migufi | Urusobe ruto rwa silikoni rugabanya impanuka z'amashanyarazi hagati y'imiyoboro y'amazi n'isoko | Gukomera kw'amashanyarazi y'umupaka byazamutse, uburebure bw'umupaka bukozwe neza | Udupapuro twa logique duteye imbere (<14nm) |
| Imicungire myiza y'ubushyuhe | Ubwikorezi bw'insinga bugabanya uburyo ubushyuhe bufatana | Ubushyuhe bugabanukaho 30%, ubushyuhe bwo gukora bugabanukaho 15-25°C | Imashini zikoresha ikoranabuhanga rya 3D, ibikoresho by'ikoranabuhanga by'imodoka |
| Gukoresha ikoreshwa ry'inshuro nyinshi | Kugabanuka k'ubushobozi bwa parasite no kwiyongera kw'uburyo bwo gutwara ibintu | Gutinda kugabanukaho 20%, bifasha gutunganya ibimenyetso >30GHz | Itumanaho rya mmWave, utumashini twa satelite comm |
| Kongera ubushobozi bwo guhindura imiterere y'igishushanyo | Nta gusukura imiti igabanya ubukana bw'umugongo bikenewe, bishyigikira uburyo bwo gukurura umugongo | Intambwe z'ibikorwa zagabanutseho 13%-20%, ubucucike bw'ishyirwa mu bikorwa ry'inyongeraho 40% | Ibyuma bivanze bya IC, Sensors |
| Ubudahangarwa bw'umubiri buterwa n'ingufu | Ubwikorezi bw'insinga butandukanya aho PN ihurira n'udukoko | Umuvuduko w'amashanyarazi wa Latch-up wariyongereye ugera kuri >100mA | Ibikoresho by'ingufu bifite ingufu nyinshi |
Muri make, inyungu nyamukuru za SOI ni izi: ikora vuba kandi ikoresha ingufu nke.
Bitewe n'iyi miterere y'imikorere ya SOI, ifite akamaro kanini mu nzego zisaba imikorere myiza ya frequency n'imikorere y'ingufu.
Nkuko bigaragara hano hasi, hashingiwe ku gipimo cy'ibipimo by'ikoreshwa bihuye na SOI, bigaragara ko RF n'ibikoresho by'amashanyarazi ari byo bigize igice kinini cy'isoko rya SOI.
| Ahantu ho Gusaba | Isoko ry'Imigabane |
| RF-SOI (Umuvuduko wa Radiyo) | 45% |
| SOI y'ingufu | 30% |
| FD-SOI (Yangiritse burundu) | 15% |
| SOI y'amaso | 8% |
| SOI yo kumenya | 2% |
Bitewe n’iterambere ry’amasoko nko mu itumanaho rigendanwa no gutwara imodoka mu buryo bwikora, SOI silicon wafers nazo zitezweho kugumana igipimo runaka cy’iterambere.
XKH, nk'umuvumbuzi ukomeye mu ikoranabuhanga rya Silicon-On-Insulator (SOI), itanga ibisubizo byuzuye bya SOI kuva ku bushakashatsi no ku iterambere kugeza ku musaruro w'ingano hakoreshejwe inzira zikomeye zo gukora. Urutonde rwacu rwuzuye rurimo 200mm/300mm SOI wafers zigizwe na RF-SOI, Power-SOI na FD-SOI, hamwe n'igenzura rikomeye ry'ubuziranenge rituma habaho imikorere idasanzwe (ubunini buri hagati ya ± 1.5%). Dutanga ibisubizo byihariye bifite ubugari bw'urwego rwa oxide (BOX) kuva kuri 50nm kugeza kuri 1.5μm hamwe n'ibipimo bitandukanye byo kurwanya kugira ngo bihuze n'ibisabwa byihariye. Dukoresheje ubunararibonye bw'imyaka 15 mu bya tekiniki n'uruhererekane rukomeye rw'ibicuruzwa ku isi, dutanga ibikoresho byiza bya SOI ku nganda zikora ibikoresho bya semiconductor ku rwego rwo hejuru ku isi, bituma habaho udushya twinshi mu itumanaho rya 5G, ibikoresho by'ikoranabuhanga by'imodoka, n'ubuhanga bw'ubukorano.
Igihe cyo kohereza: 24 Mata 2025






