SOI (Silicon-Kuri-Insulator) waferKugereranya ibikoresho byihariye bya semiconductor byerekana urwego rwa ultra-thin silicon igizwe hejuru ya oxyde oxyde. Imiterere yihariye ya sandwich itanga ibikorwa byingenzi byongera ibikoresho bya semiconductor.
Imiterere:
Igikoresho cyibikoresho (Hejuru ya Silicon):
Ubunini buva kuri nanometero nyinshi kugeza kuri micrometero, bukora nk'urwego rukora rwo guhimba transistor.
Yashyinguwe Oxide Layeri (BOX):
Dioxyde de silikoni irinda (0,05-15 mm) itandukanya amashanyarazi igikoresho cya substrate.
Shingiro:
Silicon nini (100-500μm z'ubugari) itanga ubufasha bwa mashini.
Ukurikije uburyo bwo gutegura tekinoroji, inzira nyamukuru yuburyo bwa SOI silicon wafers irashobora gushyirwa mubice nka: SIMOX (tekinoroji yo gutera inshinge ya ogisijeni), BESOI (tekinoroji yo guhuza ibikoresho), na Smart Cut (tekinoroji yo kwambura ubwenge).
SIMOX (Ikoreshwa rya Oxygene yo mu bwigunge) ni tekinike ikubiyemo gutera inshinge za ogisijeni zifite ingufu nyinshi muri wafer ya silicon kugira ngo habeho dioxyde de dioxyde de silicon, hanyuma igakorerwa ubushyuhe bwo hejuru kugira ngo ikosore inenge. Intangiriro ni inshinge ya ion ogisijeni kugirango ibe ogisijeni yashyinguwe.
BESOI (Bonding Thinning technology) ikubiyemo guhuza wafer ebyiri za silicon hanyuma ukayinanura imwe murimwe binyuze mu gusya imashini no gutunganya imiti kugirango ube imiterere ya SOI. Intangiriro iri mu guhuza no kunanuka.
Gukata Smart (Tekinoroji ya Intelligent Exfoliation) ikora urwego rwa exfolisiyoneri binyuze mu gutera inshinge ya hydrogen. Nyuma yo guhambira, hakorwa uburyo bwo kuvura ubushyuhe bwa silicon wafer hafi ya hydrogène ion, bigakora urwego ruto cyane. Intangiriro ni ugukuramo hydrogen.
Kugeza ubu, hari ubundi buhanga buzwi nka SIMBOND (tekinoroji yo guhuza ogisijeni), bwakozwe na Xinao. Mubyukuri, ni inzira ihuza okisijeni yo gutera inshinge hamwe na tekinoroji yo guhuza. Muri iyi nzira ya tekiniki, ogisijeni yatewe ikoreshwa nkurwego rworoshye, kandi ogisijeni nyirizina yashyinguwe ni urwego rwa okiside yumuriro. Kubwibyo, icyarimwe itezimbere ibipimo nkuburinganire bwa silikoni yo hejuru hamwe nubwiza bwa ogisijeni yashyinguwe.
SOI silicon wafers yakozwe ninzira zitandukanye za tekiniki zifite ibipimo bitandukanye byimikorere kandi birakwiriye muburyo butandukanye bwo gusaba.
Ibikurikira nimbonerahamwe yincamake yibikorwa byingenzi bya SOI silicon wafers, ihujwe nibikorwa byabo bya tekiniki hamwe nibikorwa nyabyo. Ugereranije na silicon gakondo, SOI ifite ibyiza byingenzi mukuringaniza umuvuduko no gukoresha ingufu. (PS: Imikorere ya 22nm FD-SOI yegereye iya FinFET, kandi igiciro cyaragabanutseho 30%.)
| Ibyiza byo gukora | Ihame rya tekiniki | Kugaragara byihariye | Ikoreshwa risanzwe |
| Ubushobozi buke bwa Parasitike | Gukingura ibice (BOX) bihagarika kwishyuza hagati yibikoresho na substrate | Umuvuduko wo guhindura wiyongereyeho 15% -30%, gukoresha ingufu byagabanutseho 20% -50% | 5G RF, imiyoboro y'itumanaho ryinshi |
| Kugabanuka Kumeneka Yubu | Gukingura ibice birwanya inzira zigezweho | Amashanyarazi yamenetse yagabanutseho> 90%, igihe kinini cya bateri | Ibikoresho bya IoT, ibikoresho bya elegitoroniki byambara |
| Kongera Imirasire Ikomeye | Gukingira ibice bibuza imirasire iterwa no kwishyuza | Kwihanganira imirasire byateje imbere 3-5x, bigabanya ibyabaye rimwe gusa | Icyogajuru, ibikoresho bya kirimbuzi |
| Kugenzura Umuyoboro Mugufi | Gitoya ya silicon igabanya guhuza amashanyarazi hagati yamazi nisoko | Kunoza inzitizi yumubyigano wa voltage, gutezimbere subthreshold kumurongo | Imiyoboro ihanitse ya node (<14nm) |
| Gutezimbere Ubushyuhe | Gukingura ibice bigabanya guhuza ubushyuhe bwumuriro | 30% ubushyuhe bukabije, 15-25 ° C ubushyuhe bwo hasi | 3D IC, ibikoresho bya elegitoroniki |
| Gukwirakwiza cyane | Kugabanya ubushobozi bwa parasitike no kongera umuvuduko wabatwara | 20% gutinda hasi, ishyigikira> 30GHz gutunganya ibimenyetso | mmItumanaho, Umuyoboro wa satelite |
| Kongera Igishushanyo mbonera | Ntabwo doping nziza isabwa, ishyigikira kubogama inyuma | 13% -20% intambwe nkeya yintambwe, 40% murwego rwo hejuru rwo kwishyira hamwe | Ivanga-ibimenyetso bya IC, Sensors |
| Ubudahangarwa bw'umubiri | Gukingura ibice bitandukanya parasitike ya PN | Latch-up igezweho yiyongereye kuri> 100mA | Ibikoresho byamashanyarazi menshi |
Kurangiza, ibyiza byingenzi bya SOI ni: ikora byihuse kandi ikora neza.
Bitewe nibi bikorwa biranga SOI, ifite porogaramu nini mubice bisaba imikorere yinshuro nziza nibikorwa byo gukoresha ingufu.
Nkuko bigaragara hano hepfo, ukurikije igipimo cyimirima isaba ihuye na SOI, urashobora kubona ko RF nibikoresho byamashanyarazi bifite igice kinini cyisoko rya SOI.
| Umwanya wo gusaba | Umugabane w'isoko |
| RF-SOI (Umuyoboro wa Radio) | 45% |
| Imbaraga SOI | 30% |
| FD-SOI (Byuzuye) | 15% |
| SOI nziza | 8% |
| Sensor SOI | 2% |
Hamwe no kuzamuka kwamasoko nkitumanaho rya terefone igendanwa no gutwara ibinyabiziga byigenga, wafer ya SOI silicon nayo iteganijwe gukomeza umuvuduko runaka witerambere.
X. Inshingano zacu zuzuye zirimo 200mm / 300mm SOI wafer izenguruka RF-SOI, Power-SOI na FD-SOI, hamwe no kugenzura ubuziranenge bukomeye butuma imikorere idahwitse (uburinganire buri hagati ya ± 1.5%). Dutanga ibisubizo byabugenewe hamwe na oxyde yashyinguwe (BOX) uburebure bwa metero kuva kuri 50nm kugeza kuri 1.5μm hamwe nuburyo butandukanye bwo guhangana kugirango byuzuze ibisabwa byihariye. Twifashishije imyaka 15 yubumenyi bwa tekinike hamwe nuruhererekane rukomeye rwo gutanga amasoko ku isi, turatanga byimazeyo ibikoresho byo mu rwego rwo hejuru bya SOI ibikoresho byo mu rwego rwo hejuru ku bakora inganda zo mu rwego rwo hejuru ku rwego rwo hejuru ku isi hose, bigatuma habaho udushya twinshi mu itumanaho rya 5G mu itumanaho rya 5G, ibikoresho bya elegitoroniki, hamwe n’ubwenge bukoreshwa mu bwenge.
XKH's SOI wafers:
Igihe cyo kohereza: Apr-24-2025