Duhereye ku ihame ryakazi rya LED, biragaragara ko ibikoresho bya epitaxial wafer aribintu byingenzi bigize LED. Mubyukuri, ibipimo byingenzi bya optoelectronic nkuburebure bwumuraba, umucyo, hamwe na voltage yimbere bigenwa ahanini nibikoresho bya epitaxial. Epitaxial wafer tekinoroji nibikoresho bifite akamaro kanini mubikorwa byo gukora, hamwe na Metal-Organic Chemical Vapor Deposition (MOCVD) aribwo buryo bwibanze bwo gukura ibice bito bito bya kristu ya III-V, II-VI, hamwe n’ibivange. Hano haribintu bizaza muri tekinoroji ya LED epitaxial wafer.
1. Kunoza uburyo bwo gukura intambwe ebyiri
Kugeza ubu, umusaruro wubucuruzi ukoresha intambwe ebyiri zo gukura, ariko umubare wubutaka ushobora gupakirwa icyarimwe ni muto. Mugihe sisitemu 6-wafer ikuze, imashini zikoresha wafer zigera kuri 20 ziracyatezwa imbere. Kongera umubare wa wafer akenshi biganisha kuburinganire budahagije mubice bya epitaxial. Iterambere ry'ejo hazaza rizibanda ku byerekezo bibiri:
- Gutezimbere tekinoroji yemerera gupakira substrate nyinshi mubyumba bimwe byerekana, bigatuma bikenerwa cyane kubyara umusaruro munini no kugabanya ibiciro.
- Gutezimbere ibikoresho byikora cyane, bisubirwamo ibikoresho bya-wafer.
2. Hydride Vapor Icyiciro Epitaxy (HVPE) Ikoranabuhanga
Iri koranabuhanga rituma iterambere ryihuta rya firime zibyibushye hamwe nubucucike buke bwa dislocation, zishobora kuba insimburangingo yo gukura kwa homoepitaxial ukoresheje ubundi buryo. Byongeye kandi, firime ya GaN yatandukanijwe na substrate irashobora guhinduka mubindi byinshi bya GaN imwe-kristu. Nyamara, HVPE ifite ibibi, nkikibazo cyo kugenzura neza umubyimba hamwe na gaze ya ruswa ishobora kubangamira kurushaho kunoza ibintu bya GaN.
Si-Doped HVPE-GaN
(a) Imiterere ya reaction ya Si-ikoporora HVPE-GaN; (b) Ishusho ya 800 μ m- umubyimba Si-dope HVPE-GaN;
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3. Gukura Epitaxial Gukura cyangwa Ikoranabuhanga rya Epitaxial Gukura
Ubu buhanga bushobora kurushaho kugabanya ubucucike bwa dislokisiyo no kuzamura ubwiza bwa kristu ya epitaxial ya GaN. Inzira ikubiyemo:
- Gushyira urwego rwa GaN kuri substrate ikwiye (safiro cyangwa SiC).
- Gushyira polycrystalline SiO₂ mask ya mask hejuru.
- Ukoresheje Photolithography hamwe na etching kugirango ukore Windows ya GaN hamwe na mask ya mask ya SiO₂.Mugihe cyo gukura gukurikira, GaN yabanje gukura ihagaritse mumadirishya hanyuma ikaza kuruhande rwa SiO₂.
XKH's GaN-kuri-safi
4. Ikoranabuhanga rya Pendeo-Epitaxy
Ubu buryo bugabanya cyane inenge ya lattice iterwa na lattice hamwe nubushuhe budahuye hagati ya substrate na epitaxial layer, bikarushaho kuzamura ubuziranenge bwa GaN. Intambwe zirimo:
- Gukura epitaxial ya GaN kuri substrate ikwiye (6H-SiC cyangwa Si) ukoresheje inzira ebyiri.
- Gukora ibihitamo byatoranijwe bya epitaxial layer kugeza kuri substrate, kurema inkingi isimburana (GaN / buffer / substrate) hamwe nu mwobo wubatswe.
- Gukura byiyongera kuri GaN, bigenda byiyongera kuruhande rwinkingi zumwimerere za GaN, byahagaritswe hejuru yumwobo.Kubera ko nta mask ikoreshwa, ibi birinda guhura hagati ya GaN nibikoresho bya mask.
XKH ya GaN-kuri-Silicon wafer
5. Gutezimbere Uburebure-Umuhengeri UV LED Ibikoresho bya Epitaxial
Ibi birashiraho urufatiro rukomeye rwa UV-yishimye ya fosifori ishingiye kuri LED yera. Fosifore nyinshi zikora neza zirashobora gushimishwa numucyo UV, zitanga urumuri rwinshi kuruta sisitemu ya YAG: Ce, bityo bigatuma iterambere ryera rya LED ryera.
6. Multi-Quantum Iriba (MQW) Ikoranabuhanga rya Chip
Muburyo bwa MQW, umwanda utandukanye urakopororwa mugihe cyo gukura kwurwego rutanga urumuri kugirango habeho amariba atandukanye. Kwiyongera kwa fotone yasohotse muri ayo mariba bitanga urumuri rwera mu buryo butaziguye. Ubu buryo butezimbere imikorere yumucyo, bugabanya ibiciro, kandi bworoshya gupakira no kugenzura imizunguruko, nubwo bugaragaza ibibazo bikomeye bya tekiniki.
7. Gutezimbere Ikoranabuhanga rya "Photon Recycling"
Muri Mutarama 1999, Sumitomo yo mu Buyapani yakoze LED yera ikoresheje ibikoresho bya ZnSe. Ikoranabuhanga ririmo gukura firime ya CdZnSe yoroheje kuri ZnSe imwe-kristal substrate. Iyo amashanyarazi, firime isohora urumuri rwubururu, rugahuza na ZnSe substrate kugirango rutange urumuri rwumuhondo rwuzuzanya, bivamo urumuri rwera. Mu buryo nk'ubwo, Ikigo cy’ubushakashatsi cya Photonics muri kaminuza ya Boston cyashyize hamwe igice cya semiconductor ya AlInGaP kuri GaN-LED yubururu kugira ngo gitange urumuri rwera.
8. LED Epitaxial Wafer Inzira Itemba
Ibihimbano bya Epitaxial Wafer:
Substrate design Igishushanyo mbonera → Gukura kwa bffer growth Gukura kwa N-Ubwoko bwa GaN growth Gukura kwa MQW kumurika → Gukura kwa P-Ubwoko bwa GaN → Annealing → Kwipimisha (Photoluminescence, X-ray) → Epitaxial wafer
Ip Gukora Chip:
Epitaxial wafer design Igishushanyo cya mask no guhimba → Photolithography → Ion etching → N-electrode yo mu bwoko bwa N
Wafer ya ZMSH GaN-kuri-SiC
Igihe cyo kohereza: Nyakanga-25-2025