Iterambere ryinganda za GaN ryihuse

Gallium nitride (GaN) ikoreshwa ry’ibikoresho by’amashanyarazi iragenda yiyongera cyane, iyobowe n’abacuruzi b’ibikoresho bya elegitoroniki by’abashinwa, kandi biteganijwe ko isoko ry’ibikoresho by’amashanyarazi GaN rizagera kuri miliyari 2 z'amadolari mu 2027, aho riva kuri miliyoni 126 z’amadolari ya Amerika mu 2021. Kugeza ubu, urwego rwa elegitoroniki y’abaguzi nirwo rutera ingufu za nitride ya gallium, miliyoni 207 zikaba ziyongera kuri miliyoni 207 z’amadolari y’Amerika. igipimo cya 52 ku ijana.

Ibikoresho bya GaN bifite ituze ryinshi, irwanya ubushyuhe bwiza, amashanyarazi n'amashanyarazi. Ugereranije nibice bya silicon, ibikoresho bya GaN bifite ubwinshi bwa electron kandi bigenda. Ibikoresho bya GaN bikoreshwa cyane cyane kumasoko ya elegitoroniki yumuguzi kugirango yishyure byihuse kimwe n’itumanaho hamwe na porogaramu yagutse.

Abashinzwe inganda bavuze ko nubwo isoko rya elegitoroniki y’abaguzi rikomeje kuba intege nke, icyerekezo cy’ibikoresho bya GaN gikomeza kuba cyiza. Ku isoko rya GaN, abahinguzi b'Abashinwa bashyize mubikorwa bya substrate, epitaxial, igishushanyo mbonera n’inganda zikora amasezerano. Ibicuruzwa bibiri byingenzi mubidukikije bya GaN mubushinwa ni Innoseco na Xiamen SAN 'IC.

Andi masosiyete y'Abashinwa mu murenge wa GaN arimo uruganda rukora amasoko ya Suzhou Nawei Technology Co., LTD., Dongguan Zhonggan Semiconductor Technology Co., LTD., Uwatanze epitaxy Suzhou Jingzhan Semiconductor Co., LTD.

Ikoranabuhanga rya Suzhou Nawei ryiyemeje gukora ubushakashatsi no guteza imbere no gutunganya inganda za gallium nitride (GaN) imwe rukumbi ya kristal substrate, ibikoresho byingenzi byingenzi bya semiconductor ya gatatu. Nyuma yimyaka 10 yimbaraga, Nawei Technology imaze kubona umusaruro wa santimetero 2 za gallium nitride imwe ya kristal substrate, irangiza iterambere ryikoranabuhanga ryubuhanga bwibicuruzwa bya santimetero 4, kandi byacitse binyuze mubuhanga bwingenzi bwa santimetero 6. Ubu ni yo yonyine mu Bushinwa kandi ni imwe muri nkeya ku isi ishobora gutanga litiro 2 za gallium nitride imwe rukumbi ya kirisiti ku bwinshi. Indangantego ya Gallium nitride irayobora kwisi. Mu myaka 3 iri imbere, tuzibanda ku guhindura ikoranabuhanga ryambere ryimuka mu isoko ryisi yose.

Mugihe tekinoroji ya GaN ikuze, porogaramu zayo zizaguka kuva ibicuruzwa byishyurwa byihuse kubikoresho bya elegitoroniki bikoresha amashanyarazi kuri PCS, seriveri na TVS. Bizanakoreshwa cyane mumashanyarazi yimodoka no guhindura ibinyabiziga byamashanyarazi.