Karubide ya silikoni ya SiCigikoresho kivuga ku gikoresho gikozwe muri karubide ya silikoni nk'ibikoresho fatizo.
Dukurikije imiterere itandukanye yo kurwanya, igabanyijemo ibikoresho by'ingufu bya silikoni nakarubide ya silikoni ifite ubwishingizi buciriritseIbikoresho bya RF.
Imiterere y'ibikoresho by'ingenzi n'ikoreshwa rya karubide ya silikoni
Ibyiza by'ingenzi bya SiC birutaIbikoresho bya Sini:
SiC ifite icyuho cya band inshuro eshatu kurusha Si, gishobora kugabanya amazi ava mu kirere no kongera ubushobozi bwo kwihanganira ubushyuhe.
SiC ifite imbaraga zo kugabanya ingufu inshuro 10 kurusha Si, ishobora kongera ubucucike bw'amashanyarazi, imikorere yayo, kwihanganira ubushobozi bwa voltage no kugabanya igihombo cyo kuyihagarika, ikaba ikwiriye gukoreshwa mu gukoresha voltage nyinshi.
SiC ifite umuvuduko wa electron saturation drift ukubye kabiri ugereranije na Si, bityo ikaba ishobora gukora ku muvuduko wo hejuru.
SiC ifite ubushobozi bwo gutwara ubushyuhe inshuro eshatu kurusha Si, ikaba ifite ubushobozi bwo gukwirakwiza ubushyuhe neza, ishobora gushyigikira ubucucike bw'ingufu nyinshi no kugabanya ibisabwa mu gukwirakwiza ubushyuhe, bigatuma igikoresho cyoroha.
Ingufu ziyobora amashanyarazi
Substrate iyobora amashanyarazi: Gukuraho imyanda itandukanye muri kristu, cyane cyane imyanda yo mu rwego rwo hasi, kugira ngo kristu igere ku buhanga bwo hejuru bwo kurwanya amashanyarazi.
Iyoborasubstrate ya karubide ya silikoniagace ka SiC
Igikoresho cy'ingufu za silicon carbide gikoresha amashanyarazi giterwa no gukura kwa silicon carbide epitaxial layer kuri substrate ikoresha amashanyarazi, urupapuro rwa silicon carbide epitaxial rukomeza gutunganywa, harimo no gukora diode za Schottky, MOSFET, IGBT, nibindi, bikoreshwa cyane cyane mu modoka zikoresha amashanyarazi, amashanyarazi ya photovoltaic, transit ya gari ya moshi, centre y'amakuru, charger n'ibindi bikorwa remezo. Inyungu z'imikorere ni izi zikurikira:
Imiterere y’umuvuduko ukabije wongerewe. Ingufu z’amashanyarazi za karubide ya silikoni zikubye inshuro zirenga 10 ugereranyije na silicon, ibyo bigatuma imbaraga zo kurwanya umuvuduko ukabije w’ibikoresho bya karubide ya silikoni ziruta cyane iz’ibikoresho bya silikoni zingana.
Imiterere myiza y'ubushyuhe buri hejuru. Karubide ya silikoni ifite ubushobozi bwo gutwara ubushyuhe bwinshi kurusha silikoni, ibyo bigatuma gukwirakwiza ubushyuhe mu gikoresho byoroha kandi ubushyuhe ntarengwa bwo gukora bukazamuka. Kudakoresha ubushyuhe bwinshi bishobora gutuma imbaraga z'amashanyarazi ziyongera cyane, ariko bikagabanya ibisabwa kuri sisitemu yo gukonjesha, kugira ngo icyuma gikoreshwemo gishobore koroha kandi gikonje.
Ingufu zikoreshwa nke. ① Igikoresho cya silicon carbide gifite ubushobozi buke bwo kudakora neza kandi nta gihombo kirimo; (2) Umuvuduko w'amazi y'ibikoresho bya silicon carbide ugabanuka cyane ugereranije n'uw'ibikoresho bya silicon, bityo bigabanyiriza igihombo cy'ingufu; ③ Nta kintu kigaragara mu gihe ibikoresho bya silicon carbide bizimya umuriro, kandi igihombo cyo guhindura umuriro ni gito, ibyo bikaba birushaho kunoza cyane uburyo bwo guhindura amashanyarazi mu buryo bufatika.
Substrate ya SiC ifite ubwishingizi buciriritse
Substrate ya SiC ifite ubwikorezi buciriritse: Doping ya N ikoreshwa mu kugenzura neza ubushobozi bwo guhangana n’ibicuruzwa biyobora amashanyarazi binyuze mu gupima isano iri hagati y’ubwinshi bw’ibintu bikoresha azote, igipimo cyo gukura n’ubushobozi bwo guhangana n’amakristale.
Ibikoresho bya substrate bifite ubuziranenge buhanitse kandi bikingira buhoro buhoro
Ibikoresho bya RF bishingiye kuri silikoni idafite ubushyuhe bwinshi bikorerwa no gukura gallium nitride epitaxial layer kuri substrate ya silikoni idafite ubushyuhe bwinshi kugira ngo hategurwe silicon nitride epitaxial sheet, harimo na HEMT n'ibindi bikoresho bya gallium nitride RF, bikoreshwa cyane cyane mu itumanaho rya 5G, itumanaho ry'ibinyabiziga, porogaramu zo kurinda, kohereza amakuru, n'indege.
Igipimo cy’amashanyarazi ya silicon carbide na gallium nitride gikubye inshuro 2.0 na 2.5 ugereranyije na silicon, bityo imikorere ya silicon carbide na gallium nitride iruta iy’ibikoresho bisanzwe bya silicon. Ariko, ibikoresho bya gallium nitride bifite ingaruka mbi zo kudashyuha neza, mu gihe silicon carbide ifite kudashyuha neza no gutwara ubushyuhe, ibyo bikaba bishobora gutuma ibikoresho bya gallium nitride bidashobora kwihanganira ubushyuhe neza, bityo inganda zifata silicon carbide ifite ubwikorezi buciriritse nk’ishingiro, maze urwego rwa gan epitaxial ruhingwa kuri silicon carbide substrate kugira ngo rukore ibikoresho bya RF.
Niba hari icyaha, hamagara usiba
Igihe cyo kohereza: Nyakanga-16-2024