Gukura urwego rwinyongera rwa atome ya silicon kuri substrate ya silicon wafer ifite ibyiza byinshi:
Mubikorwa bya silicon ya CMOS, gukura kwa epitaxial (EPI) kumurongo wafer ni intambwe ikomeye.
1 、 Kunoza ubuziranenge bwa kirisiti
Inenge ya mbere yubusembwa nubuhumane: Mugihe cyibikorwa byo gukora, wafer substrate irashobora kugira inenge numwanda. Imikurire yicyiciro cya epitaxial irashobora kubyara urwego rwohejuru rwa monocrystalline silicon igizwe nubushuhe buke bwinenge hamwe n umwanda kuri substrate, ibyo bikaba ari ngombwa muguhimba ibikoresho nyuma.
Imiterere ya kristu imwe: Gukura kwa Epitaxial bituma habaho imiterere ya kirisiti imwe, kugabanya ingaruka zimbibi zimbuto nudusembwa mubikoresho bya substrate, bityo bikazamura ubwiza rusange bwa kirisiti ya wafer.
2 kunoza imikorere y'amashanyarazi.
Kunoza ibikoresho biranga ibikoresho: Mugukuza epitaxial layer kuri substrate, kwibanda kwa doping hamwe nubwoko bwa silicon birashobora kugenzurwa neza, bigahindura imikorere yamashanyarazi yibikoresho. Kurugero, doping ya epitaxial layer irashobora guhindurwa neza kugirango igenzure voltage yumubare wa MOSFETs nibindi bikoresho byamashanyarazi.
Kugabanya imiyoboro yamenetse: Igipimo cyiza-cyiza cya epitaxial gifite ubucucike buke buke, bufasha kugabanya imiyoboro yamenetse mubikoresho, bityo bikazamura imikorere yibikoresho no kwizerwa.
3 kunoza imikorere y'amashanyarazi.
Kugabanya Ingano yimiterere: Mubintu bito bito (nka 7nm, 5nm), ubunini bwibikoresho bikomeza kugabanuka, bisaba ibikoresho byinshi binonosoye kandi byujuje ubuziranenge. Epitaxial yiterambere rya tekinoroji irashobora kuzuza ibyo bisabwa, igashyigikira inganda zikora cyane kandi zifite ubucucike bukabije.
Kongera imbaraga za Breakdown Voltage: Ibice bya Epitaxial birashobora gushushanywa hamwe n’umuvuduko mwinshi wo gusenyuka, bikaba ingenzi mu gukora ibikoresho bifite ingufu nyinshi n’amashanyarazi menshi. Kurugero, mubikoresho byingufu, ibice bya epitaxial birashobora kunoza igikoresho cya voltage yamashanyarazi, byongera ibikorwa byumutekano.
4 、 Gutunganya guhuza hamwe nuburyo bwinshi
Imiterere myinshi: Tekinoroji yo gukura ya Epitaxial ituma imikurire yimiterere myinshi kuri substrate, hamwe nibice bitandukanye bifite doping yibanze hamwe nubwoko butandukanye. Ibi ni ingirakamaro cyane mugukora ibikoresho bigoye bya CMOS no gufasha guhuza ibice bitatu.
Ubwuzuzanye: Igikorwa cyo gukura epitaxial kirahuza cyane nuburyo busanzwe bwo gukora CMOS, bigatuma byoroha kwinjiza mubikorwa byubu bikora bitabaye ngombwa ko bihinduka cyane kumurongo wibikorwa.
Incamake: Ikoreshwa ryikura rya epitaxial muri CMOS silicon ikora cyane cyane igamije kuzamura ubwiza bwa kirisiti ya wafer, kunoza imikorere yumuriro wamashanyarazi, gushyigikira inzira igezweho, no kuzuza ibyifuzo byimikorere ihanitse kandi yuzuye cyane. Epitaxial tekinoroji yiterambere ituma igenzura neza doping yibintu hamwe nimiterere, kunoza imikorere rusange no kwizerwa kwibikoresho.
Igihe cyo kohereza: Ukwakira-16-2024