Inchi 12 za SiC substrate Umurambararo 300mm Ubunini 750μm 4H-N Ubwoko bushobora guhindurwa

Ibisobanuro bigufi:

Mu gihe cy'ingenzi mu mpinduka z'inganda za semiconductor zigana ku bisubizo binoze kandi bito, kugaragara kwa substrate ya SiC ya santimetero 12 (substrate ya silikoni ya santimetero 12) byahinduye cyane imiterere. Ugereranyije n'ibipimo gakondo bya santimetero 6 na santimetero 8, inyungu nini y'substrate ya santimetero 12 yongera umubare w'udupira twakozwe kuri wafer inshuro zirenze enye. Byongeye kandi, igiciro cya substrate ya SiC ya santimetero 12 cyagabanutseho 35-40% ugereranije n'udupira dusanzwe twa santimetero 8, ibi bikaba ari ingenzi cyane mu gukoresha ibicuruzwa bya nyuma.
Dukoresheje ikoranabuhanga ryacu ryo gutwara imyuka, twageze ku rwego rwo hejuru mu nganda ku bucucike bw'amakristaro ya santimetero 12, dutanga ishingiro ryihariye ry'ibikoresho bizakurikiraho mu gukora ibikoresho. Iri terambere ni ingenzi cyane mu gihe hari ikibazo cy'ibura ry'amakuru ku isi.

Ibikoresho by'ingenzi by'amashanyarazi mu bikorwa bya buri munsi—nk'ibiro by'amashanyarazi byihuta bya EV na sitasiyo za 5G—birimo gukoresha iyi substrate nini cyane. Cyane cyane mu birere bishyuha cyane, bifite voltage nyinshi, n'ahandi hantu hakomeye, substrate ya SiC ya santimetero 12 igaragaza ituze rihebuje ugereranije n'ibikoresho bishingiye kuri silikoni.

Ohereza imeri kuri twe

Ibiranga

Ibipimo bya tekiniki

Ibisobanuro bya Silicon Carbide (SiC) ya santimetero 12
Icyiciro		Umusaruro wa ZeroMPD Icyiciro (Icyiciro cya Z)	Umusaruro Usanzwe Icyiciro (Igiciro cya P)		Impamyabumenyi y'ikinyoma (Icyiciro cya D)
Ingano		3 0 0 mm~1305mm
Ubunini	4H-N	750μm±15μm	750μm±25μm
	4H-SI	750μm±15μm	750μm±25μm
Icyerekezo cya Wafer		Umurongo utari hagati y'umurongo: 4.0° ugana <1120 >±0.5° kuri 4H-N, Umurongo utari hagati y'umurongo: <0001>±0.5° kuri 4H-SI
Ubucucike bw'imiyoboro mito	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ubushobozi bwo kwirinda	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Icyerekezo cy'ibanze cy'ubugari		{10-10} ±5.0°
Uburebure bw'ibanze bw'ikiraro	4H-N	Ntabyo
	4H-SI	Notch
Kutagaragaza Edge		mm 3
LTV/TTV/Umuheto /Umupfundo		≤5μm / ≤15μm / ≤35 μ m / ≤55 mm			≤5μm / ≤15μm / ≤35 □ μm / ≤55 □ μm
Ubukana		Igiporuniya Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Imyanya y'inkombe iterwa n'urumuri rwinshi Amasahani ya Hex ashingiye ku rumuri rwinshi Uduce twa Polytype dukoresheje urumuri rwinshi Ibikubiye muri karuboni igaragara Imiterere y'ubuso bwa Silicone iterwa n'urumuri rwinshi		Nta na kimwe Agace k'ikusanyirizo ≤0.05% Nta na kimwe Agace k'ikusanyirizo ≤0.05% Nta na kimwe			Uburebure buhuriweho ≤ mm 20, uburebure bumwe ≤ mm 2 Agace k'ikusanyirizo ≤0.1% Agace k'ikusanyirizo ≤3% Agace k'ikusanyirizo ≤3% Uburebure buhuriweho ≤1 × umurambararo wa wafer
Udupira tw'inkombe dukoresheje urumuri rwinshi		Nta na kimwe cyemewe gifite ubugari n'ubujyakuzimu bwa ≥0.2mm			7 byemewe, ≤1 mm buri kimwe
(TSD) Guhindura vis yo gushyira mu ruziga		≤500 cm-2		Ntabyo
(BPD) Guhinduka kw'indege y'ibanze		≤1000 cm-2		Ntabyo
Kwanduzwa n'urumuri rwinshi rwa silicon		Nta na kimwe
Gupfunyika		Kaseti ya Wafer nyinshi cyangwa Igikoresho kimwe cya Wafer
Inyandiko:
1 Imipaka y'ubusembwa ikoreshwa ku buso bwose bwa wafer uretse agace kavamo inkombe. 2Imivuno igomba gusuzumwa ku maso ya Si gusa. 3 Amakuru yerekeye ukwangirika kw'ibice by'inyama aturuka gusa ku bimera bya KOH byashushanyijwe.

Ibiranga by'ingenzi

1. Ubushobozi bwo gukora n'inyungu z'ikiguzi: Umusaruro mwinshi wa substrate ya SiC ya santimetero 12 (substrate ya silikoni ya santimetero 12) ugaragaza ibihe bishya mu nganda za semiconductor. Umubare w'udupira duto twaboneka muri wafer imwe ugera ku nshuro 2.25 ugereranije n'udupira twa santimetero 8, bigatuma umusaruro uzamuka cyane. Ibitekerezo by'abakiriya bigaragaza ko gukoresha substrate ya santimetero 12 byagabanyije ikiguzi cyo gukora module y'amashanyarazi ku kigero cya 28%, bitanga inyungu ikomeye mu irushanwa ku isoko ririmo guhangana cyane.
2. Imiterere Idasanzwe: Igice cya SiC cya santimetero 12 gihabwa ibyiza byose bya silikoni karubide - ubushyuhe bwacyo bungana n'inshuro 3 za silikoni, mu gihe imbaraga zacyo zo kwangirika zingana n'inshuro 10 za silikoni. Ibi biranga bituma ibikoresho bishingiye kuri substrates za santimetero 12 bikora neza ahantu hari ubushyuhe bwinshi burenga dogere selisiyusi 200, bigatuma biba byiza cyane mu bikorwa bikomeye nko mu modoka zikoresha amashanyarazi.
3. Ikoranabuhanga ryo Gutunganya Ubuso: Twakoze uburyo bushya bwo gusiga irangi ry’ibinyabutabire (CMP) by’umwihariko ku bidukikije bya SiC bya santimetero 12, bigatuma ubuso burushaho kuba ubw’ubugari (Ra<0.15nm). Ubu buryo bukemura ikibazo cy’isi yose cyo gutunganya ubuso bwa silicon carbide wafer bufite umurambararo munini, bukuraho inzitizi zo gukura neza kwa epitaxial.
4. Imikorere yo gucunga ubushyuhe: Mu bikorwa bifatika, substrates za SiC za santimetero 12 zigaragaza ubushobozi butangaje bwo gukwirakwiza ubushyuhe. Amakuru y’igerageza agaragaza ko munsi y’ubucucike bumwe bw’ingufu, ibikoresho bikoresha substrates za santimetero 12 bikora ku bushyuhe buri hagati ya 40-50°C n’ibikoresho bishingiye kuri silikoni, bikongera cyane igihe cyo gukoresha ibikoresho.

Porogaramu z'ingenzi

1. Sisitemu Nshya y'Ingufu z'Ibinyabiziga: Substrate ya SiC ya santimetero 12 (substrate ya silikoni ya santimetero 12) irimo guhindura imiterere y'amashanyarazi y'ibinyabiziga. Kuva kuri charger ziri mu bwato (OBC) kugeza kuri inverter nini na sisitemu yo gucunga bateri, kunoza imikorere kwazanywe na substrate ya santimetero 12 byongera uburebure bw'ibinyabiziga ku kigero cya 5-8%. Raporo zitangwa n'ikigo gikomeye mu gukora imodoka zigaragaza ko gukoresha substrate zacu za santimetero 12 byagabanyije igihombo cy'ingufu muri sisitemu yazo yo gusharija vuba ku kigero gitangaje cya 62%.
2. Urwego rw'Ingufu Zisubira: Muri sitasiyo z'amashanyarazi zikoresha amashanyarazi ya photovoltaic, inverters zishingiye kuri substrates za SiC za santimetero 12 ntabwo zifite gusa ibintu bito byo mu bwoko bwa fome ahubwo zigira n'ubushobozi bwo guhindura ibintu burenga 99%. Cyane cyane mu miterere ikwirakwizwa, ubu buryo bworoshye butuma abazigama amafaranga ibihumbi amagana y'amayuan mu gihombo cy'amashanyarazi ku bakoresha buri mwaka.
3. Ikoranabuhanga mu by’Ubwikorezi: Imashini zihindura imikorere y’amajwi zikoresha substrates za santimetero 12 zigaragaza imikorere myiza mu ma robots yo mu nganda, ibikoresho bya CNC, n'ibindi bikoresho. Imiterere yazo yo guhindura imikorere y’amajwi menshi yongera umuvuduko wa moteri ku kigero cya 30% mu gihe zigabanya ingaruka mbi za electromagnetic kugeza kuri kimwe cya gatatu cy’ibisubizo bisanzwe.
4. Udushya mu by'ikoranabuhanga: Ikoranabuhanga rya telefoni zigezweho zo mu bwoko bwa terefone zisharira vuba ryatangiye gukoresha substrates za SiC za santimetero 12. Biteganijwe ko ibicuruzwa bisharira vuba birengeje 65W bizahinduka burundu bikoreshe silicon carbide, aho substrates za santimetero 12 zizavamo amahitamo meza mu bijyanye n'igiciro.

Serivisi za XKH zigenewe substrate ya SiC ya santimetero 12

Kugira ngo huzuzwe ibisabwa byihariye kuri substrates za SiC za santimetero 12 (substrates za silikoni carbide za santimetero 12), XKH itanga ubufasha busesuye bwa serivisi:
1. Guhindura ubunini bw'ibice:
Dutanga substrates za santimetero 12 mu buryo butandukanye bwo gupima ubunini burimo 725μm kugira ngo duhuze n'ibyo dukeneye mu buryo butandukanye.
2. Gukoresha imiti igabanya ubukana bw'ibiyobyabwenge:
Inganda zacu zishyigikira ubwoko bwinshi bw'amashanyarazi arimo substrates za n-type na p-type, hamwe n'uburyo bwo kugenzura neza ubukana bw'amashanyarazi buri hagati ya 0.01-0.02Ω·cm.
3. Serivisi zo gupima:
Dufite ibikoresho byuzuye byo gupima ku rwego rwa wafer, dutanga raporo zuzuye z'igenzura.
XKH irasobanukiwe ko buri mukiriya afite ibisabwa byihariye kuri substrates za SiC za santimetero 12. Bityo, dutanga uburyo bworoshye bwo gukorana mu bucuruzi kugira ngo dutange ibisubizo birusha ibindi guhangana, byaba kuri:
· Ingero z'ubushakashatsi n'iterambere
· Ibicuruzwa byinshi byaguzwe
Serivisi zacu zihariye zituma dushobora guhaza ibyo ukeneye mu bijyanye na tekiniki n'umusaruro ku bikoresho bya SiC bya santimetero 12.