12 santimetero SiC Substrate N Ubwoko bunini bufite imikorere myiza cyane Porogaramu za RF

Ishusho ya 12 santimetero SiC Substrate N yo mu bwoko bwa

Ibisobanuro bigufi:

Iyi substrate ya santimetero 12 ya SiC ihagarariye iterambere rikomeye mu ikoranabuhanga ry’ibikoresho bya semiconductor, itanga inyungu zihindura imikorere y’ibikoresho by’amashanyarazi n’ikoreshwa rya frequency nyinshi. Nk’uburyo bwa wafer ya silicon carbide nini cyane iboneka mu nganda, iyi substrate ya santimetero 12 ya SiC ituma habaho ubukungu budasanzwe mu gihe ikomeza kugira ibyiza by’ibikoresho by’icyuho kinini n’imiterere idasanzwe y’ubushyuhe. Ugereranyije na wafers za SiC zisanzwe za santimetero 6 cyangwa nto, iyi platform ya santimetero 12 itanga ubuso burenze 300% bushobora gukoreshwa kuri wafer imwe, yongera cyane umusaruro w’ifaranga kandi igabanya ikiguzi cyo gukora ibikoresho by’amashanyarazi. Uku guhinduka kw’ingano kwerekana amateka y’impinduka za silicon wafers, aho buri kwiyongera k’umurambararo kwazanye igabanuka rikomeye ry’ikiguzi n’imikorere myiza. Uburyo bwiza bwo gutwara ubushyuhe bwa santimetero 12 ya SiC (hafi ya santimetero 3 za silicon) hamwe n’imbaraga zikomeye zo kugabanya ubushyuhe bituma igira agaciro cyane ku buryo bw’imodoka z’amashanyarazi za 800V zo mu gisekuru gitaha, aho ituma modules z’amashanyarazi ziciriritse kandi zikora neza. Mu bikorwa remezo bya 5G, umuvuduko mwinshi wa electron saturation y’iyi mashini utuma ibikoresho bya RF bikora ku frequency nyinshi kandi bigatakaza igihombo gito. Kuba iyi substrate ihuye n'ibikoresho bya silicon byahinduwe kandi byoroshya ikoreshwa ry'ibikoresho bisanzwe, nubwo hakenewe uburyo bwihariye bwo kuyikoresha bitewe n'ubukana bukabije bwa SiC (9.5 Mohs). Uko umusaruro wiyongera, iyi substrate ya santimetero 12 ya SiC yitezweho kuba ihame mu nganda mu gukoresha ingufu nyinshi, bigatera udushya mu bijyanye n'imodoka, ingufu zishobora kuvugururwa, n'uburyo bwo guhindura ingufu z'inganda.

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Ibiranga

Ibipimo bya tekiniki

Ibisobanuro bya Silicon Carbide (SiC) ya santimetero 12
Icyiciro		Umusaruro wa ZeroMPD Icyiciro (Icyiciro cya Z)	Umusaruro Usanzwe Icyiciro (Igiciro cya P)		Impamyabumenyi y'ikinyoma (Icyiciro cya D)
Ingano		3 0 0 mm~1305mm
Ubunini	4H-N	750μm±15μm	750μm±25μm
	4H-SI	750μm±15μm	750μm±25μm
Icyerekezo cya Wafer		Umurongo utari hagati y'umurongo: 4.0° ugana <1120 >±0.5° kuri 4H-N, Umurongo utari hagati y'umurongo: <0001>±0.5° kuri 4H-SI
Ubucucike bw'imiyoboro mito	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ubushobozi bwo kwirinda	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Icyerekezo cy'ibanze cy'ubugari		{10-10} ±5.0°
Uburebure bw'ibanze bw'ikiraro	4H-N	Ntabyo
	4H-SI	Notch
Kutagaragaza Edge		mm 3
LTV/TTV/Umuheto /Umupfundo		≤5μm / ≤15μm / ≤35 μ m / ≤55 mm			≤5μm / ≤15μm / ≤35 □ μm / ≤55 □ μm
Ubukana		Igiporuniya Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Imyanya y'inkombe iterwa n'urumuri rwinshi Amasahani ya Hex ashingiye ku rumuri rwinshi Uduce twa Polytype dukoresheje urumuri rwinshi Ibikubiye muri karuboni igaragara Imiterere y'ubuso bwa Silicone iterwa n'urumuri rwinshi		Nta na kimwe Agace k'ikusanyirizo ≤0.05% Nta na kimwe Agace k'ikusanyirizo ≤0.05% Nta na kimwe			Uburebure buhuriweho ≤ mm 20, uburebure bumwe ≤ mm 2 Agace k'ikusanyirizo ≤0.1% Agace k'ikusanyirizo ≤3% Agace k'ikusanyirizo ≤3% Uburebure buhuriweho ≤1 × umurambararo wa wafer
Udupira tw'inkombe dukoresheje urumuri rwinshi		Nta na kimwe cyemewe gifite ubugari n'ubujyakuzimu bwa ≥0.2mm			7 byemewe, ≤1 mm buri kimwe
(TSD) Guhindura vis yo gushyira mu ruziga		≤500 cm-2		Ntabyo
(BPD) Guhinduka kw'indege y'ibanze		≤1000 cm-2		Ntabyo
Kwanduzwa n'urumuri rwinshi rwa silicon		Nta na kimwe
Gupfunyika		Kaseti ya wafer nyinshi cyangwa icupa rimwe rya wafer
Inyandiko:
1 Imipaka y'ubusembwa ikoreshwa ku buso bwose bwa wafer uretse agace kavamo inkombe. 2Imivuno igomba gusuzumwa ku maso ya Si gusa. 3 Amakuru yerekeye ukwangirika kw'ibice by'inyama aturuka gusa ku bimera bya KOH byashushanyijwe.

Ibiranga by'ingenzi

1. Akamaro k'ingano nini: Inzu ya SiC ya santimetero 12 (substrate ya silikoni karubide ya santimetero 12) itanga ubuso bunini bwa wafer imwe, bigatuma hakorwa utwuma twinshi kuri wafer imwe, bityo bikagabanya ikiguzi cyo kuyikora no kongera umusaruro.
2. Ibikoresho Bikora Cyane: Kuba silicon carbide irwanya ubushyuhe bwinshi n'imbaraga nyinshi zo kwangirika bituma substrate ya santimetero 12 iba nziza cyane ku bikoresho bifite voltage nyinshi n'ingufu nyinshi, nka EV inverters na sisitemu zo gusharija vuba.
3. Guhuza uburyo bwo gutunganya: Nubwo SiC ifite ubukana bwinshi n'ingorane zo kuyitunganya, substrate ya SiC ya santimetero 12 igera ku ntege nke zo hejuru binyuze mu buryo bwiza bwo gukata no kuyisukura, bigatuma umusaruro w'ibikoresho urushaho kuba mwiza.
4. Gucunga neza ubushyuhe: Hamwe n'uburyo bwiza bwo gutwara ubushyuhe kurusha ibikoresho bishingiye kuri silikoni, substrate ya santimetero 12 ikemura neza ikibazo cyo gushonga k'ubushyuhe mu bikoresho bifite ingufu nyinshi, bigatuma igihe cyo kubaho cy'ibikoresho kirushaho kuba cyiza.

Porogaramu z'ingenzi

1. Ibinyabiziga bikoresha amashanyarazi: Imashini ya SiC ya santimetero 12 (imashini ya silikoni ya santimetero 12) ni igice cy'ingenzi cya sisitemu y'amashanyarazi yo mu gisekuru gitaha, ituma inverters zikora neza cyane zikongera uburebure bw'imodoka no kugabanya igihe cyo gushyushya.

2. Sitasiyo za 5G Base: Substrates nini za SiC zishyigikira ibikoresho bya RF bifite frequency yo hejuru, zihaza ibyifuzo bya sitasiyo za 5G base kugira ngo habeho ingufu nyinshi kandi habeho igihombo gito.

3. Ingufu z'inganda: Mu byuma bihindura imirasire y'izuba n'imiyoboro y'amashanyarazi, substrate ya santimetero 12 ishobora kwihanganira voltage nyinshi mu gihe igabanya igihombo cy'ingufu.

4. Ibyuma by'ikoranabuhanga ku bakoresha: Ibyuma bikoresha amashanyarazi byihuta mu gihe kizaza hamwe n'ibikoresho by'amashanyarazi bishobora gukoresha ibikoresho bya SiC bya santimetero 12 kugira ngo bigere ku bunini buto kandi bigire umusaruro mwiza.

Serivisi za XKH

Twibanda ku serivisi zihariye zo gutunganya substrates za SiC za santimetero 12 (substrates za silikoni carbide za santimetero 12), harimo:
1. Gukata no Gutunganya: Gutunganya substrate bidasembuye cyane kandi bikozwe neza hakurikijwe ibyo abakiriya bakeneye, bigatuma igikoresho gikora neza kandi gihamye.
2. Inkunga yo Gukura kwa Epitaxial: Serivisi nziza za epitaxial wafer zo kwihutisha ikorwa rya chips.
3. Isesengura ry’ibyiciro bito: Rishyigikira kwemeza ubushakashatsi n’iterambere ku bigo by’ubushakashatsi n’ibigo by’ubucuruzi, rigabanya ibihe by’iterambere.
4. Ubujyanama mu bya tekiniki: Ibisubizo kuva ku guhitamo ibikoresho kugeza ku kunoza uburyo bwo gutunganya, bifasha abakiriya gutsinda imbogamizi zo gutunganya SiC.
Byaba ari ibyo gukora ku bwinshi cyangwa guhindura ibintu byihariye, serivisi zacu za santimetero 12 za SiC substrate zijyanye n'ibyo umushinga wawe ukeneye, zigatuma iterambere ry'ikoranabuhanga ritera imbere.