Ifite santimetero 12 za SIC substrate ya silikoni karubide prime grade diameter 300mm nini 4H-N Ikwiriye gukoreshwa mu gukwirakwiza ubushyuhe bwinshi mu gikoresho

Isantimetero 12 za SIC substrate silikoni karubide prime grade diameter 300mm nini 4H-N Ikwiriye gukoreshwa mu gutwika ubushyuhe bw'ibikoresho bifite ingufu nyinshi Ishusho yagaragaye

Ibisobanuro bigufi:

Substrate ya silikoni ya santimetero 12 (substrate ya SiC) ni substrate nini kandi ifite ubushobozi bwo gukora ibintu bya semiconductor ikoze muri kristu imwe ya silikoni. Silicon carbide (SiC) ni ibikoresho bya semiconductor bifite imiterere myiza y'amashanyarazi, ubushyuhe n'ubukanishi, bikoreshwa cyane mu gukora ibikoresho by'ikoranabuhanga mu kirere gifite ingufu nyinshi, frequency nyinshi n'ubushyuhe bwinshi. Substrate ya santimetero 300 ni uburyo bugezweho bwo gukoresha ikoranabuhanga rya silikoni carbide, bushobora kunoza cyane imikorere myiza y'umusaruro no kugabanya ikiguzi.

Ohereza imeri kuri twe

Ibiranga

Ibiranga ibicuruzwa

1. Ubushyuhe bwinshi: ubushyuhe bwa karubide ya silikoni bukubye inshuro zirenga eshatu ugereranyije na silikoni, ikaba ikwiriye gukoreshwa mu gukwirakwiza ubushyuhe ku bikoresho bifite ingufu nyinshi.

2. Ingufu nyinshi zo mu murima: Ingufu zo mu murima zikubye inshuro 10 ugereranyije na silikoni, zikwiriye gukoreshwa mu buryo bukoresha umuvuduko mwinshi.

3. Icyuho kinini: Icyuho ni 3.26eV (4H-SiC), gikwiriye gukoreshwa mu bushyuhe bwinshi no mu nshuro nyinshi.

4. Ubukana bwinshi: Ubukana bwa Mohs ni 9.2, bukurikira diyama gusa, burwanya kwangirika neza kandi bufite imbaraga za mekanike.

5. Gukomera mu bya shimi: kurwanya ingese cyane, imikorere ihamye mu bushyuhe bwinshi n'ibidukikije bikomeye.

6. Ingano nini: santimetero 300 (300mm), yongera umusaruro, igagabanya ikiguzi cy'ibikoresho.

7.Ubucucike buke bw'ibice: ikoranabuhanga ryo gukuraho kristale imwe nziza kugira ngo habeho ubucucike buke bw'ibice kandi bigire imiterere myiza.

Icyerekezo cy'ingenzi cy'umusaruro

1. Ibyuma by'ikoranabuhanga bikoresha ingufu:

Mosfets: Ikoreshwa mu modoka zikoresha amashanyarazi, moteri zo mu nganda n'izikoresha ingufu zihindura umuriro.

Diode: nka diode za Schottky (SBD), zikoreshwa mu gutunganya no guhinduranya neza amashanyarazi.

2. Ibikoresho bya Rf:

Amplifier y'amashanyarazi ya Rf: ikoreshwa muri sitasiyo z'itumanaho za 5G no mu itumanaho rya satelite.

Ibikoresho bya mikoroonde: Bikwiriye uburyo bwo gutumanaho bwa radar na wireless.

3. Imodoka nshya zikoresha ingufu:

Sisitemu zikoresha amashanyarazi: imashini zigenzura moteri n'inverters ku binyabiziga bikoresha amashanyarazi.

Ikirundo cyo gusharija: Module y'amashanyarazi yo gusharija byihuse.

4. Ikoreshwa mu nganda:

Inverter ifite ingufu nyinshi: yo kugenzura moteri z'inganda no gucunga ingufu.

Urusobe rw'amashanyarazi: Ku byuma bihindura amashanyarazi bya HVDC n'ibikoresho by'ikoranabuhanga bitanga ingufu.

5. Ibyerekeye indege:

Ibyuma by'ikoranabuhanga bikoresha ubushyuhe bwinshi: bikwiranye n'ibipimo by'ubushyuhe bwinshi by'ibikoresho byo mu kirere.

6. Urwego rw'ubushakashatsi:

Ubushakashatsi bwa semiconductor ku ikoranabuhanga rigezweho: mu guteza imbere ibikoresho bishya bya semiconductor n'ibikoresho.

Iyi substrate ya silikoni ya santimetero 12 ni ubwoko bw'ibikoresho bya semiconductor bifite imikorere myiza cyane, bifite imiterere myiza nko gutwara ubushyuhe bwinshi, imbaraga nyinshi zo kugabanya ingufu n'icyuho kinini cy'umurongo. Ikoreshwa cyane mu bikoresho by'ikoranabuhanga bikoresha ingufu, ibikoresho bya radiyo, imodoka nshya zikoresha ingufu, kugenzura inganda no mu kirere, kandi ni ingenzi mu guteza imbere iterambere ry'ibikoresho by'ikoranabuhanga bigezweho kandi bifite ingufu nyinshi.

Nubwo substrate za silicon carbide muri iki gihe zifite ikoreshwa rito mu bikoresho by'ikoranabuhanga nk'indorerwamo za AR, ubushobozi bwazo mu gucunga neza ingufu n'ibikoresho by'ikoranabuhanga bito bishobora gushyigikira ibisubizo byoroheje kandi bifite imikorere myiza ku bikoresho bya AR/VR bizaza. Kuri ubu, iterambere nyamukuru rya substrate ya silicon carbide ryibanda ku nganda nko mu modoka nshya zikoresha ingufu, ibikorwa remezo by'itumanaho no mu buryo bwikora mu nganda, kandi riteza imbere inganda za semiconductor kugira ngo zitere imbere mu cyerekezo cyiza kandi cyizewe.

XKH yiyemeje gutanga ibikoresho bya SIC 12 byiza cyane hamwe n'ubufasha busesuye bwa tekiniki na serivisi, harimo:

1. Umusaruro wihariye: Dukurikije ibyo umukiriya akeneye, hatangwa uburyo butandukanye bwo guhangana n'ingufu, icyerekezo cya kristu n'uburyo bwo gutunganya ubuso.

2. Kunoza imikorere: Guha abakiriya inkunga ya tekiniki mu iterambere rya epitaxial, gukora ibikoresho n'izindi nzira zo kunoza imikorere y'ibicuruzwa.

3. Gupima no kwemeza: Gutanga icyemezo gikomeye cyo kumenya inenge no kwemeza ubuziranenge kugira ngo harebwe ko substrate yujuje ibisabwa n'inganda.

4. Ubufatanye mu bushakashatsi no mu iterambere: Gufatanya gutegura ibikoresho bishya bya silikoni hamwe n'abakiriya kugira ngo bateze imbere udushya mu ikoranabuhanga.

Imbonerahamwe y'amakuru

Ibisobanuro bya Silicon Carbide (SiC) ya santimetero 12
Icyiciro		Umusaruro wa ZeroMPD Icyiciro (Icyiciro cya Z)	Umusaruro Usanzwe Icyiciro (Igiciro cya P)		Impamyabumenyi y'ikinyoma (Icyiciro cya D)
Ingano		3 0 0 mm~305mm
Ubunini	4H-N	750μm±15μm	750μm±25μm
	4H-SI	750μm±15μm	750μm±25μm
Icyerekezo cya Wafer		Umurongo utari hagati y'umurongo: 4.0° ugana <1120 >±0.5° kuri 4H-N, Umurongo utari hagati y'umurongo: <0001>±0.5° kuri 4H-SI
Ubucucike bw'imiyoboro mito	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ubushobozi bwo kwirinda	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Icyerekezo cy'ibanze cy'ubugari		{10-10} ±5.0°
Uburebure bw'ibanze bw'ikiraro	4H-N	Ntabyo
	4H-SI	Notch
Kutagaragaza Edge		mm 3
LTV/TTV/Umuheto /Umupfundo		≤5μm / ≤15μm / ≤35 μ m / ≤55 mm			≤5μm / ≤15μm / ≤35 □ μm / ≤55 □ μm
Ubukana		Igiporuniya Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Imyanya y'inkombe iterwa n'urumuri rwinshi Amasahani ya Hex ashingiye ku rumuri rwinshi Uduce twa Polytype dukoresheje urumuri rwinshi Ibikubiye muri karuboni igaragara Imiterere y'ubuso bwa Silicone iterwa n'urumuri rwinshi		Nta na kimwe Agace k'ikusanyirizo ≤0.05% Nta na kimwe Agace k'ikusanyirizo ≤0.05% Nta na kimwe			Uburebure buhuriweho ≤ mm 20, uburebure bumwe ≤ mm 2 Agace k'ikusanyirizo ≤0.1% Agace k'ikusanyirizo ≤3% Agace k'ikusanyirizo ≤3% Uburebure buhuriweho ≤1 × umurambararo wa wafer
Udupira tw'inkombe dukoresheje urumuri rwinshi		Nta na kimwe cyemewe gifite ubugari n'ubujyakuzimu bwa ≥0.2mm			7 byemewe, ≤1 mm buri kimwe
(TSD) Guhindura vis yo gushyira mu ruziga		≤500 cm-2		Ntabyo
(BPD) Guhinduka kw'indege y'ibanze		≤1000 cm-2		Ntabyo
Kwanduzwa n'urumuri rwinshi rwa silicon		Nta na kimwe
Gupfunyika		Kaseti ya wafer nyinshi cyangwa icupa rimwe rya wafer
Inyandiko:
1 Imipaka y'ubusembwa ikoreshwa ku buso bwose bwa wafer uretse agace kavamo inkombe. 2Imivuno igomba gusuzumwa ku maso ya Si gusa. 3 Amakuru yerekeye ukwangirika kw'ibice by'inyama aturuka gusa ku bimera bya KOH byashushanyijwe.

XKH izakomeza gushora imari mu bushakashatsi no guteza imbere kugira ngo iteze imbere iterambere rya substrates za silikoni za santimetero 12 mu bunini, inenge nke kandi zihamye, mu gihe XKH isuzuma ikoreshwa ryayo mu nzego zigezweho nko mu bikoresho by'ikoranabuhanga (nk'amashanyarazi ku bikoresho bya AR/VR) na quantum computing. Mu kugabanya ikiguzi no kongera ubushobozi, XKH izazana iterambere mu nganda za semiconductor.