3 santimetero ifite ubuziranenge buhanitse bwo gukingira （HPSI）SiC wafer 350um Dummy grade Prime grade
Porogaramu
Wafer za HPSI SiC ni ingenzi cyane mu gutuma ibikoresho by'amashanyarazi byo mu gisekuru gitaha bikoreshwa mu buryo butandukanye bukora neza:
Sisitemu zo Guhindura Ingufu: SiC wafers ni ingenzi mu bikoresho by'ingenzi by'amashanyarazi nka MOSFETs, diodes, na IGBTs, bikaba ari ingenzi mu guhindura neza ingufu mu miyoboro y'amashanyarazi. Ibi bice biboneka mu bikoresho by'amashanyarazi bikoresha ingufu nyinshi, moteri, na inverters z'inganda.
Imodoka zikoresha amashanyarazi (EV):Gukenera imodoka zikoresha amashanyarazi bikomeje kwiyongera bisaba gukoresha ibikoresho by'ikoranabuhanga bikoresha ingufu zihagije, kandi SiC wafers ziri ku isonga muri iri hinduka. Muri EV powertrains, izi wafers zitanga ubushobozi bwo gukora neza no guhinduranya vuba, bigira uruhare mu kongera igihe cyo gusharija, gukora intera ndende, no kunoza imikorere y'imodoka muri rusange.
Ingufu Zisubiramo:Mu ngufu zishobora kongera gukoreshwa nk'ingufu zikomoka ku mirasire y'izuba n'umuyaga, SiC wafers zikoreshwa mu byuma bihindura ingufu n'ibihindura ingufu bituma ingufu zifatwa neza kandi zigakwirakwizwa. Ubushobozi bwinshi bwo gutwara ubushyuhe n'imbaraga nyinshi za SiC bituma izi ngufu zikora neza, ndetse no mu bihe bikomeye by'ibidukikije.
Ikoranabuhanga mu by'Ubwikorezi n'Ikoranabuhanga rya Roboti:Ikoranabuhanga rikoresha ingufu nyinshi mu buryo bw’ikoranabuhanga mu nganda no mu by’ikoranabuhanga rya robotiki bisaba ibikoresho bishobora guhinduranya vuba, gukora ku ngufu nyinshi, no gukora mu gihe cy’umuvuduko mwinshi. Imashini zikoresha SiC zujuje ibi bisabwa mu gutanga imikorere myiza no gukomera, ndetse no mu bihe bigoye byo gukora.
Sisitemu z'itumanaho:Mu bikorwa remezo by'itumanaho, aho ubwizerwe buhanitse no guhindura ingufu neza ari ingenzi, SiC wafers zikoreshwa mu gutanga ingufu n'ibikoresho bihindura DC-DC. Ibikoresho bya SiC bifasha kugabanya ikoreshwa ry'ingufu no kunoza imikorere ya sisitemu mu bigo by'amakuru n'imiyoboro y'itumanaho.
Binyuze mu gutanga ishingiro rikomeye ry’ikoreshwa ry’ingufu nyinshi, HPSI SiC wafer ituma habaho iterambere ry’ibikoresho bikoresha ingufu nke, bigafasha inganda kugera ku bisubizo birambye kandi bishimishije.
Imitungo
| ikigo | Icyiciro cy'umusaruro | Icyiciro cy'ubushakashatsi | Impamyabumenyi y'ikinyoma |
| Ingano | 75.0 mm ± 0.5 mm | 75.0 mm ± 0.5 mm | 75.0 mm ± 0.5 mm |
| Ubunini | 350 µm ± 25 µm | 350 µm ± 25 µm | 350 µm ± 25 µm |
| Icyerekezo cya Wafer | Ku murongo: <0001> ± 0.5° | Kuri axis: <0001> ± 2.0° | Kuri axis: <0001> ± 2.0° |
| Ubucucike bwa mikoropipe kuri 95% bya Wafers (MPD) | ≤ 1 cm⁻² | ≤ 5 cm⁻² | ≤ 15 cm⁻² |
| Ubushobozi bwo guhangana n'amashanyarazi | ≥ 1E7 Ω·cm | ≥ 1E6 Ω·cm | ≥ 1E5 Ω·cm |
| Dopant | Byakuweho | Byakuweho | Byakuweho |
| Icyerekezo cy'ibanze cy'ubugari | {11-20} ± 5.0° | {11-20} ± 5.0° | {11-20} ± 5.0° |
| Uburebure bw'ibanze bw'ikiraro | mm 32.5 ± mm 3.0 | mm 32.5 ± mm 3.0 | mm 32.5 ± mm 3.0 |
| Uburebure bwa kabiri bw'ikiraro | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Icyerekezo cya kabiri cy'icyitegererezo | Ubushyuhe bwo hejuru: 90° CW uvuye mu nzu y'ibanze ± 5.0° | Ubushyuhe bwo hejuru: 90° CW uvuye mu nzu y'ibanze ± 5.0° | Ubushyuhe bwo hejuru: 90° CW uvuye mu nzu y'ibanze ± 5.0° |
| Kutagaragaza Edge | mm 3 | mm 3 | mm 3 |
| LTV/TTV/Umuheto/Umupfundo | 3 µm / 10 µm / ± 30 µm / 40 µm | 3 µm / 10 µm / ± 30 µm / 40 µm | 5 µm / 15 µm / ± 40 µm / 45 µm |
| Ubukana bw'ubuso | Isura ya C: Irasekuye, Isura ya Si: CMP | Isura ya C: Irasekuye, Isura ya Si: CMP | Isura ya C: Irasekuye, Isura ya Si: CMP |
| Uduce (tugenzurwa n'urumuri rwinshi) | Nta na kimwe | Nta na kimwe | Nta na kimwe |
| Hex Plates (igenzurwa n'urumuri rwinshi) | Nta na kimwe | Nta na kimwe | Agace k'ikusanyirizo 10% |
| Uduce twa Polytype (tugenzurwa n'urumuri rwinshi) | Agace k'ikusanyirizo 5% | Agace k'ikusanyirizo 5% | Agace k'ikusanyirizo 10% |
| Imikufi (igenzurwa n'urumuri rwinshi) | ≤ imikufi 5, uburebure buhuriweho ≤ mm 150 | ≤ imisumari 10, uburebure buhuriweho ≤ mm 200 | ≤ imisumari 10, uburebure buhuriweho ≤ mm 200 |
| Gukata inkombe | Nta na kimwe cyemewe ubugari n'ubujyakuzimu bwa ≥ 0.5 mm | 2 byemewe, ≤ ubugari n'ubujyakuzimu bya mm 1 | 5 byemewe, ≤ ubugari n'ubujyakuzimu bya mm 5 |
| Kwanduzwa n'ubuso (bigenzurwa n'urumuri rwinshi) | Nta na kimwe | Nta na kimwe | Nta na kimwe |
Ibyiza by'ingenzi
Umusaruro mwiza w’ubushyuhe: Uburyo SiC ikoresha ubushyuhe bwinshi butuma ubushyuhe bukwirakwira neza mu bikoresho by’amashanyarazi, bigatuma bikoresha ingufu nyinshi kandi bigakora neza nta gushyuha cyane. Ibi bivuze ko sisitemu nto kandi zikora neza kandi zimara igihe kirekire zikora.
Umuvuduko Ukabije w’Ingufu: Hamwe n’icyuho kinini ugereranije na silikoni, SiC wafers zishyigikira ikoreshwa rya voltage nyinshi, bigatuma ziba nziza ku bice by’ikoranabuhanga bikenera kwihanganira voltage nyinshi, nko mu modoka zikoresha amashanyarazi, sisitemu z’amashanyarazi, na sisitemu z’ingufu zisubira.
Kugabanuka k'ingufu z'amashanyarazi: Kuba ibikoresho bya SiC bidakoresha ingufu nyinshi kandi umuvuduko wabyo wihuta utuma bigabanuka ku gihombo cy'ingufu mu gihe cy'imikorere. Ibi ntibituma imikorere irushaho kuba myiza gusa ahubwo binatuma sisitemu zikoresha ingufu zigabanuka.
Kongera Kwizerwa mu Bidukikije Bikomeye: Imiterere ikomeye y'ibikoresho bya SiC ituma ikora neza mu bihe bikomeye, nko mu bushyuhe bwinshi (kugeza kuri 600°C), voltage nyinshi, n'umuvuduko wo hejuru. Ibi bituma SiC wafers zikoreshwa mu nganda, imodoka, n'ingufu zikenerwa cyane.
Ingufu Zikoreshwa mu Kunoza: Ibikoresho bya SiC bitanga ingufu nyinshi kurusha ibikoresho bisanzwe bishingiye kuri silikoni, bigabanya ingano n'uburemere bwa sisitemu z'amashanyarazi mu gihe binongera imikorere yabyo muri rusange. Ibi bituma habaho kuzigama amafaranga no kugabanya ibidukikije mu bikorwa nk'ingufu zishobora kuvugururwa n'imodoka zikoresha amashanyarazi.
Uburyo bwo kwaguka: Ubwinshi bwa santimetero 3 z'umurambararo n'ubushobozi bwo kwihanganira gukora neza bya wafer ya HPSI SiC bituma ishobora kwaguka mu gukora ibintu byinshi, ikujuje ibisabwa mu bushakashatsi no mu bucuruzi.
Umwanzuro
Umugozi wa HPSI SiC, ufite umurambararo wa santimetero 3 n'ubugari bwa 350 µm ± 25 µm, ni wo musaruro mwiza cyane ku bikoresho by'ikoranabuhanga bishya bikoresha ingufu nyinshi. Uruvange rwawo rwihariye rw'ubushyuhe, ingufu nyinshi zigabanuka, igihombo gito cy'ingufu, no kwizerana mu bihe bikomeye bituma uba ingenzi mu bikorwa bitandukanye mu guhindura ingufu, ingufu zishobora kuvugururwa, imodoka zikoresha amashanyarazi, sisitemu z'inganda, n'itumanaho.
Iyi wafer ya SiC ikwiriye cyane cyane inganda zishaka kugera ku musaruro mwiza, kuzigama ingufu nyinshi, no kunoza uburyo bwo gukora neza. Uko ikoranabuhanga ry'amashanyarazi rikomeza gutera imbere, wafer ya HPSI SiC itanga urufatiro rwo guteza imbere ibisubizo by'ingufu zizaza, biganisha ku iterambere rirambye kandi ridafite karubone nyinshi.
Ishusho irambuye
