Uduce twa Epitaxial twa 4H-SiC twa MOSFETs zifite Voltage nyinshi (100–500 μm, santimetero 6)

Ishusho ya 4H-SiC Epitaxial Wafers ikoreshwa mu gupima MOSFETs zifite Voltage nyinshi (100–500 μm, santimetero 6)

Ibisobanuro bigufi:

Iterambere ryihuse ry’imodoka zikoresha amashanyarazi, imiyoboro y’amashanyarazi igezweho, sisitemu z’ingufu zisubira, n’ibikoresho by’inganda bikoresha ingufu nyinshi byatumye hakenerwa byihutirwa ibikoresho bya semiconductor bishobora gucunga voltage nyinshi, ubucucike bw’ingufu nyinshi, no gukora neza kurushaho. Mu bikoresho bya semiconductor bifite icyuho kinini,karubide ya silikoni (SiC)Igaragara cyane kubera icyuho kinini cyayo, ubushobozi bwayo bwo gutwara ubushyuhe bwinshi, hamwe n'imbaraga zikomeye cyane z'amashanyarazi.

Ohereza imeri kuri twe

Ibiranga

Ishusho irambuye

Incamake y'ibicuruzwa

IbyacuUdupaki twa epitaxial twa 4H-SiCbyakozwe mu buryo bwihariye kugira ngoPorogaramu za MOSFET zifite voltage nyinshi cyaneIfite ibice bya epitaxial kuva kuri100 μm kugeza 500 μm on Ibyuma bya santimetero 150 (150 mm), izi wafers zitanga ahantu hanini ho guhindagurika hakenewe ku bikoresho byo mu bwoko bwa kV mu gihe zigumana ubuziranenge budasanzwe bwa kristale no kwaguka. Ubunini busanzwe burimo 100 μm, 200 μm, na 300 μm, hamwe n'uburyo bwo guhindura ibintu.

Ubunini bw'urwego rwa Epitaxial

Urukuta rwa epitaxial rugira uruhare rukomeye mu kugena imikorere ya MOSFET, cyane cyane uburinganire hagati yaingufu z'amashanyarazinaku buryo budashobora kwimurwa.

100–200 μm: Yakorewe neza MOSFET zifite voltage iri hagati kugeza kuri high, itanga uburinganire bwiza mu mikorere myiza y'amashanyarazi no kuziba ingufu.
200–500 μm: Bikwiriye ibikoresho bifite ingufu nyinshi cyane (10 kV+), bigatuma ahantu harehare ho guhindagurika kw'amazi hashobora gutuma habaho imiterere ikomeye yo kwangirika kw'amashanyarazi.

Mu buryo bwose,Ubunini bungana bugenzurwa muri ± 2%, bishimangira ko imiterere y’ibikoresho kuva kuri wafer kugeza kuri wafer n’itsinda ku rindi. Ubu buryo bworoshye butuma abashushanya banonosora imikorere y’ibikoresho byabo mu byiciro by’amashanyarazi mu gihe bakomeza kongera gukora ibikoresho mu bwinshi.

Uburyo bwo gukora

Wafer zacu zikorwa hakoreshejweepitaxy igezweho ya CVD (Chimical Vapor Deposition), bifasha kugenzura neza ubugari, gukoresha imiti igabanya ubushyuhe, n'ubwiza bwa kristale, ndetse no ku bice binini cyane.

CVD Epitaxy– Imyuka ifite isuku nyinshi n'imiterere myiza bitanga ubuso bwiza kandi bufite inenge nke.
Iterambere ry'urwego runini– Uburyo bwo gutunganya ibintu butuma ubugari bwa epitaxial bugera ku500 μmhamwe n'uburyo bungana neza cyane.
Kugenzura ikoreshwa ry'imiti igabanya ubukana bw'ibiyobyabwenge– Uburyo bwo gukosora ubwinshi hagati1×10¹⁴ – 1×10¹⁶ cm⁻³, hamwe n'ubumwe buri hejuru ya ± 5%.
Gutegura ubuso– Amafunguro ya Wafers anyuramoGusukura CMPno kugenzura neza, kugenzura ko bihuye n'ibikorwa bigezweho nko gusiga irangi ku rugi, gufotora no gushyira mu bikorwa ibyuma.

Ibyiza by'ingenzi

Ubushobozi bwo gukoresha ingufu nyinshi cyane (Ultra-High Voltage)– Uduce duto cyane twa epitaxial (100–500 μm) dushyigikira imiterere ya MOSFET yo mu bwoko bwa kV.
Ubwiza budasanzwe bwa Crystal– Kugabanuka guke kw'aho ibintu biherereye n'ubucucike bw'ibice by'imbere bitanga icyizere kandi bigagabanya gusohoka kw'amazi.
Uduce duto twa santimetero 6 tunini- Inkunga yo gukora ibikoresho byinshi, kugabanya ikiguzi kuri buri gikoresho, no guhuza neza.
Imiterere myiza y'ubushyuhe– Ubushobozi bwo gutwara ubushyuhe bwinshi n'icyuho kinini bituma habaho gukora neza ku ngufu n'ubushyuhe bwinshi.
Ibipimo Bishobora Guhindurwa– Ubunini, gukoresha imiti igabanya ubushyuhe, icyerekezo, n'irangira ry'ubuso bishobora guhindurwa hakurikijwe ibisabwa byihariye.

Ibisobanuro bisanzwe

Igipimo	Ibisobanuro
Ubwoko bw'ubushobozi bwo gutwara ibintu	Ubwoko bwa N (Ifite azote)
Ubushobozi bwo kwirinda	Icyo ari cyo cyose
Inguni Idakora ku Murongo Utari ku Murongo Urerure	4° ± 0.5° (ugana kuri [11-20])
Icyerekezo cya kristu	(0001) Si-face
Ubunini	200–300 μm (ishobora guhindurwa 100–500 μm)
Kurangiza ubuso	Imbere: CMP yahinduwe (iteguye gukoreshwa) Inyuma: yakozwe ku murongo cyangwa yahinduwe
Televiziyo ya TV	≤ 10 μm
Umuheto/Umuheto	≤ 20 μm

Ahantu ho Gukoresha Serivisi

Wafer za epitaxial za 4H-SiC zikwiriye cyaneMOSFET muri sisitemu z'amashanyarazi menshi cyane, harimo:

Inverters zikoresha amashanyarazi n'ibikoresho byo gusharija bifite voltage nyinshi
Ibikoresho byo kohereza no gukwirakwiza ibikoresho by'ikoranabuhanga
Ingufu zishobora kuvugururwa (izuba, umuyaga, ububiko)
Sisitemu zo gusimbuza ibikoresho by'inganda zikoresha ingufu nyinshi

Ibibazo Bikunze Kubazwa

Q1: Ubwoko bw'imikorere y'amashanyarazi ni ubuhe?
A1: Ubwoko bwa N, bugizwe na azote — ni urugero rw’inganda za MOSFET n’izindi mashini zitanga ingufu.

Q2: Ni ubuhe bunini bwa epitaxial buboneka?
A2: 100–500 μm, hamwe n'amahitamo asanzwe kuri 100 μm, 200 μm, na 300 μm. Ubunini bwihariye buraboneka iyo ubisabye.

Q3: Icyerekezo cya wafer n'inguni ya off-axis ni iki?
A3: (0001) Si-face, hamwe na 4° ± 0.5° hanze y'umurongo ugana mu cyerekezo cya [11-20].

Ku bijyanye natwe

XKH yihariye mu iterambere, gukora, no kugurisha ikirahure cyihariye cya optique n'ibikoresho bishya bya kristu. Ibicuruzwa byacu bitanga ibikoresho by'ikoranabuhanga bya optique, ibikoresho by'ikoranabuhanga bikoreshwa n'abantu, n'ibya gisirikare. Dutanga ibikoresho bya optique bya Safira, ibifuniko bya lens za telefoni zigendanwa, Ceramics, LT, Silicon Carbide SIC, Quartz, na semiconductor crystal wafers. Dufite ubuhanga n'ibikoresho bigezweho, turakora neza mu gutunganya ibicuruzwa bitari iby'ubuziranenge, tugamije kuba ikigo gikomeye mu ikoranabuhanga rigezweho mu bikoresho bya optoelectronic.