Ifuru ikuramo kristalo ya SiC ifite santimetero 4 na santimetero 6 na santimetero 8 kuri CVD

Ibisobanuro bigufi:

Sisitemu ya XKH yo gukuraho Crystal Furnace CVD Chemical Vapor Deposition ikoresha ikoranabuhanga rikomeye ku isi ryo gushyiramo umwuka mu by’uburozi, ryagenewe cyane cyane gukura kwa kristalo imwe ya SiC nziza. Binyuze mu kugenzura neza ibipimo by’imikorere birimo urujya n’uruza rwa gaze, ubushyuhe n’umuvuduko, ituma kristalo ya SiC igenzurwa ikura ku duce twa santimetero 4-8. Iyi sisitemu ya CVD ishobora gukora ubwoko butandukanye bwa kristalo ya SiC harimo ubwoko bwa 4H/6H-N n’ubwoko bwa 4H/6H-SEMI bukingira, butanga ibisubizo byuzuye kuva ku bikoresho kugeza ku bikorwa. Sisitemu ishyigikira ibisabwa mu gukura kwa wafers za santimetero 2-12, bigatuma iba nziza cyane mu gukora ibikoresho by’ikoranabuhanga n’ibikoresho bya RF.

Ohereza imeri kuri twe

Ibiranga

Ihame ry'imikorere

Ihame ry'ingenzi rya sisitemu yacu ya CVD rikubiyemo gusenya ubushyuhe bwa silika (urugero, SiH4) na karubone (urugero, C3H8) gaze zibanza ku bushyuhe bwinshi (ubusanzwe 1500-2000°C), gushyira kristu imwe ya SiC ku bintu bikoreshwa mu buryo bwa gazi binyuze mu buryo bwa shimi. Iri koranabuhanga rikwiriye cyane cyane mu gukora kristu imwe ifite ubuziranenge buhanitse (>99.9995%) ya 4H/6H-SiC ifite ubucucike buke (<1000/cm²), ihura n'ibisabwa bikomeye ku bikoresho by'amashanyarazi n'ibikoresho bya RF. Binyuze mu kugenzura neza imiterere ya gazi, umuvuduko w'amazi n'ubushyuhe, sisitemu ituma habaho uburyo bwo kugenzura neza ubwoko bwa kristu (ubwoko bwa N/P) n'uburyo bwo guhangana n'ingufu.

Ubwoko bwa sisitemu n'ibipimo bya tekiniki

Ubwoko bwa sisitemu	Ingano y'ubushyuhe	Ibiranga by'ingenzi	Porogaramu
CVD ifite ubushyuhe bwinshi	1500-2300°C	Ubushyuhe bwa grafiti, ubushyuhe bwa ± 5°C bungana	Iterambere rya kristu ya SiC nyinshi
CVD ishyushye cyane	800-1400°C	Ubushyuhe bwa tungsten filament, igipimo cyo gushyiramo 10-50μm/h	Epitaxy nini ya SiC
VPE CVD	1200-1800°C	Kugenzura ubushyuhe mu bice byinshi, ikoreshwa rya gaze >80%	Umusaruro w'ibinure byinshi
PECVD	400-800°C	Plasma yongerewe, igipimo cyo gushyiramo 1-10μm/h	Filimi nto za SiC zifite ubushyuhe buke

Ibiranga Tekiniki by'ingenzi

1. Sisitemu yo kugenzura ubushyuhe mu buryo buhanitse
Itanura rifite uburyo bwinshi bwo gushyushya bushobora kugumana ubushyuhe bugera kuri 2300°C hamwe n’ubushyuhe bungana bwa ±1°C mu cyumba cyose cy’ikuramo. Ubu buryo bwo gucunga ubushyuhe neza bugerwaho binyuze muri:
Uduce 12 tw'ubushyuhe dugenzurwa mu buryo bwigenga.
Gukurikirana thermocouple idahagije (Ubwoko C W-Re).
Algorithm zo guhindura imiterere y'ubushyuhe mu gihe nyacyo.
Inkuta z'icyumba zikonjeshejwe n'amazi kugira ngo zigenzure ubushyuhe.

2. Ikoranabuhanga ryo Gutanga Gazi no Kuvanga
Sisitemu yacu yihariye yo gukwirakwiza gazi iratuma habaho uburyo bwiza bwo kuvanga gazi mbere y’uko ikoreshwa kandi igatanga umusaruro uhuye:
Ibikoresho bigenzura ubwinshi bw'amazi bifite ubuziranenge bwa ± 0.05scm.
Imashini itera gaze ifite point nyinshi.
Gukurikirana imiterere y'imyuka mu gace runaka (FTIR spectroscopy).
Kwishyura umusaruro wikora mu buryo bwikora mu gihe cy'ikura ry'umusaruro.

3. Kongera Ubwiza bwa Crystal
Iyi sisitemu irimo udushya twinshi kugira ngo inoze ubwiza bwa kristale:
Icyuma gifata substrate kizunguruka (0-100rpm gishobora gutegurwa).
Ikoranabuhanga rigezweho ryo kugenzura urwego rw'imipaka.
Sisitemu yo kugenzura ubusembwa buri mu mwanya wabwo (gukwirakwiza hakoreshejwe laser ya UV).
Kwishyura stress mu buryo bwikora mu gihe cyo gukura.

4. Kwikora no kugenzura ibikorwa
Gukoresha resept mu buryo bwikora.
Uburyo bwo kunoza imiterere y'ubuhanga mu iterambere ry'ibintu mu gihe nyacyo.
Gukurikirana no gusuzuma indwara hakoreshejwe ikoranabuhanga rya kure.
Kubika amakuru arenga 1000 (bikabikwa imyaka 5).

5. Ibiranga umutekano n'ubwiringiro
Uburinzi burenze urugero butatu bushobora kugabanuka.
Sisitemu yo gusukura byihutirwa yikora.
Igishushanyo mbonera cy'inyubako gifite urwego rw'imitingito.
Garanti ya 98.5% y'igihe cyo gukora.

6. Ubwubatsi Bushobora Kugera ku Bunini
Igishushanyo mbonera cya modular cyemerera kongera ubushobozi.
Ihuye n'ingano ya wafer ya mm 100 kugeza kuri mm 200.
Ishyigikira imiterere y'amashusho yombi ahagaze n'atambitse.
Ibikoresho byo guhindura byihuse kugira ngo bitangwe.

7. Gukoresha neza ingufu
Ikoreshwa ry'ingufu rigabanukaho 30% ugereranyije na sisitemu zingana nazo.
Sisitemu yo kugarura ubushyuhe ifata 60% by'ubushyuhe bw'imyanda.
Algorithm nziza zo gukoresha gazi.
Ibisabwa ku nyubako zikurikiza LEED.

8. Uburyo bwo gukoresha ibikoresho bitandukanye
Ikura ubwoko bwose bw'ingenzi bwa SiC (4H, 6H, 3C).
Ishyigikira ubwoko bwa conductive na semi-insulation.
Ifasha mu mikorere itandukanye yo gukoresha imiti igabanya ubukana bw'ibiyobyabwenge (ubwoko bwa N, ubwoko bwa P).
Ihuye n'ibindi bintu byabanjirije ibindi (urugero, TMS, TES).

9. Imikorere ya sisitemu y'ubushyuhe
Igitutu cy'ibanze: <1×10⁻⁶ Torr
Igipimo cyo kuva kw'amazi: <1×10⁻⁹ Torr·L/segonda
Umuvuduko wo kuvoma: 5000L/s (kuri SiH₄)

Kugenzura igitutu mu buryo bwikora mu gihe cy'ikura
Ibi bisobanuro byuzuye bya tekiniki bigaragaza ubushobozi bwa sisitemu yacu bwo gukora kristu za SiC zo mu rwego rw’ubushakashatsi n’ubwiza bw’umusaruro hamwe n’uburyo bwiza bwo gukora ibintu hamwe n’umusaruro ukomeye mu nganda. Uruvange rw’igenzura ry’ubuziranenge, igenzura rigezweho, n’ubuhanga bukomeye bituma iyi sisitemu ya CVD iba amahitamo meza haba mu bushakashatsi no mu iterambere ndetse no mu gukora ibikoresho by’ikoranabuhanga mu by’amashanyarazi, ibikoresho bya RF, n’izindi porogaramu zigezweho za semiconductor.

Ibyiza by'ingenzi

1. Gukura neza kw'urukiramende
• Ubucucike bw'inenge buri hasi cyane nka <1000/cm² (4H-SiC)
• Uburyo bwo gukoresha imiti igabanya ubukana <5% (wafers za santimetero 6)
• Ubuziranenge bwa kristu >99.9995%

2. Ubushobozi bwo gukora ibintu binini
• Ifasha gukura kwa wafer ya santimetero 25
• Ubugari bw'umurambararo >99%
• Ihindagurika ry'ubunini <±2%

3. Kugenzura neza inzira
• Uburyo bwo kugenzura ubushyuhe ±1°C
• Uburyo bwo kugenzura urujya n'uruza rw'umwuka ± 0.1scm
• Uburyo bwo kugenzura umuvuduko ± 0.1Torr

4. Gukoresha neza ingufu
• Ingufu zikoreshwa neza kurusha 30% kurusha uburyo busanzwe
• Igipimo cyo gukura kigera kuri 50-200μm/h
• Igihe cyo gukora ibikoresho >95%

Porogaramu z'ingenzi

1. Ibikoresho by'ikoranabuhanga bikoresha ingufu
Ibyuma bya santimetero 6 bya 4H-SiC bya 1200V+ MOSFET/diode, bigabanya igihombo cyo guhinduranya ku kigero cya 50%.

2. Itumanaho rya 5G
Ibyuma bya SiC bikingira buhoro buhoro (resistivity >10⁸Ω·cm) kuri PAs z'ibanze, hamwe n'igihombo cyo kwinjira <0.3dB kuri >10GHz.

3. Imodoka nshya zikoresha ingufu
Modules z'amashanyarazi za SiC zo mu rwego rw'imodoka zongera urugero rwa EV ku kigero cya 5-8% kandi zigagabanya igihe cyo gusharija ku kigero cya 30%.

4. Ibikoresho bihindura amashanyarazi bya PV
Substrates zifite inenge nke zongerera ubushobozi bwo guhindura ibintu ku kigero kirenga 99% mu gihe zigabanya ingano ya sisitemu ku kigero cya 40%.

Serivisi za XKH

1. Serivisi zo guhindura ibintu
Sisitemu za CVD za santimetero 4-8 zagenwe.
Ishyigikira iterambere ry'ubwoko bwa 4H/6H-N, ubwoko bwa 4H/6H-SEMI insulation, n'ibindi.

2. Inkunga ya tekiniki
Amahugurwa yuzuye ku mikorere no kunoza imikorere.
Igisubizo cya tekiniki amasaha 24/7.

3. Ibisubizo by'inyongera
Serivisi kuva ku ntangiriro kugeza ku ishyirwa mu bikorwa kugeza ku igenzura ry'imikorere.

4. Itangwa ry'ibikoresho
Uduce twa SiC twa santimetero 2-12/epi-wafers turahari.
Ishyigikira ubwoko bwa poliyumu bwa 4H/6H/3C.

Ibintu by'ingenzi bitandukanya ibintu birimo:
Ubushobozi bwo gukura bwa kristale bugera kuri santimetero 8.
Igipimo cy'izamuka ryihuse rya 20% ugereranyije n'impuzandengo y'inganda.
Kwizerwa kwa sisitemu ku kigero cya 98%.
Pake yuzuye y'ubuhanga bwo kugenzura.