Inchi 6 z'ubwoko bwa 4H SEMI substrate ya SiC ivanze Ubunini 500μm TTV≤5μm Urwego rwa MOS

Inchi 6 z'ubwoko bwa 4H SUM Composite substrate Ubunini 500μm TTV≤5μm Urwego rwa MOS Ishusho yagaragaye

Ibisobanuro bigufi:

Bitewe n’iterambere ryihuse ry’ikoranabuhanga rya 5G mu itumanaho na radar, substrate ya SiC ya santimetero 6 ya semi-insulating yabaye ingenzi mu gukora ibikoresho bikoresha frequency nyinshi. Ugereranyije na substrate za GaAs zisanzwe, iyi substrate igumana resistivity nyinshi (>10⁸Ω·cm) mu gihe yongera imikorere y’ubushyuhe inshuro zirenga 5, ikemura neza ibibazo byo gukwirakwiza ubushyuhe mu bikoresho bifite milimetero. Amplifiers z’amashanyarazi ziri mu bikoresho bya buri munsi nka terefone zigendanwa za 5G na satellite communication terminals zishobora kuba zubatswe kuri iyi substrate. Dukoresheje ikoranabuhanga ryacu rya "buffer layer doping compensation", twagabanyije ubucucike bwa micropipe kugeza munsi ya 0.5/cm² kandi twabonye igihombo gito cyane cya 0.05 dB/mm.

Ohereza imeri kuri twe

Ibiranga

Ibipimo bya tekiniki

Ibintu	Ibisobanuro	Ibintu	Ibisobanuro
Ingano	150±0.2 mm	Ubukana bw'imbere (Si-face)	Ra≤0.2 nm (5μm×5μm)
Ubwoko bwa polikopi	4H	Udupira two mu mpande, gushwanyagurika, gucikagurika (isuzuma ry'amaso)	Nta na kimwe
Ubushobozi bwo kwirinda	≥1E8 Ω·cm	Televiziyo ya TV	≤5 μm
Ubunini bw'urwego rwo kwimura	≥0.4 μm	Ifuro	≤35 μm
Ubusa (2mm>D>0.5mm)	≤5 buri kimwe/Wafer	Ubunini	500±25 μm

Ibiranga by'ingenzi

1. Imikorere idasanzwe y'inshuro nyinshi
Iyi substrate ya SiC ifite santimetero 6 ikoresha imiterere ya dielectric layer, ituma dielectric ihinduka buri gihe ya <2% muri Ka-band (26.5-40 GHz) kandi ikongera imiterere y’itsinda ku kigero cya 40%. Yongereye 15% mu mikorere myiza na 20% ku ikoreshwa ry’ingufu muri module za T/R zikoresha iyi substrate.

2. Uburyo bwo gucunga ubushyuhe mu buryo bugezweho
Imiterere yihariye y'ikiraro gishyushya ituma ubushyuhe butwara ubushyuhe bwa 400 W/m·K. Muri module za PA za GHz 28 za 5G, ubushyuhe bw'aho buhurira buzamukaho 28°C gusa nyuma y'amasaha 24 y'imikorere idahwema - 50°C iri hasi ugereranyije n'ibisubizo bisanzwe.

3. Ubwiza bw'ifunguro rya Wafer
Binyuze mu buryo bwakozwe neza bwo gutwara umwuka ushyushye (PVT), tugera ku bucucike bwo gutandukana n'amazi <500/cm² na Guhinduka k'Ubunini bwose (TTV) <3 μm.
4. Gutunganya mu buryo bworoshye mu nganda
Uburyo bwacu bwo guteranya imirasire hakoreshejwe laser bwakozwe by’umwihariko kuri substrate ya SiC ya santimetero 6 igabanya ubucucike bw’ubuso ku rugero rubiri mbere y’uko epitaxy itangira.

Porogaramu z'ingenzi

1. Ibice by'ingenzi bya sitasiyo ya 5G
Mu buryo bwa antene nini za MIMO, ibikoresho bya GaN HEMT biri kuri substrates za SiC za santimetero 6 bigira imbaraga zo gutanga 200W n'ubushobozi burenze 65%. Ibizamini byo mu murima bya 3.5 GHz byagaragaje ko inyongera ya 30% mu ntera yo gutwikira.

2. Sisitemu z'itumanaho rya satelite
Imashini zitwara amakuru za satelite zikoresha ikoranabuhanga rya "Low-Earth orbit" (LEO) zikoresha iyi substrate zigaragaza EIRP ya dB 8 iri hejuru muri Q-band (40 GHz) mu gihe zigabanya uburemere bwazo ho 40%. Imashini zikoresha ikoranabuhanga rya SpaceX Starlink zayikoresheje mu gukora ibintu byinshi.

3. Sisitemu za Radar za Gisirikare
Module za radar T/R zikoresha ikoranabuhanga rya phased-array kuri iyi substrate zigira bandwidth ya 6-18 GHz n'urusaku ruri hasi ya 1.2 dB, zikongera intera yo gutahura ho kilometero 50 muri sisitemu za radar zitanga umuburo hakiri kare.

4. Radar y'imodoka ya Millimeter-Wave
Uduce twa radar tw’imodoka twa 79 GHz dukoresha iyi substrate twongera ubushobozi bwo kugenzura inguni kugera kuri 0.5°, byujuje ibisabwa na L4 mu gutwara imodoka.

Dutanga igisubizo cyuzuye cya serivisi yihariye ku bikoresho bya SiC bya santimetero 6. Mu bijyanye no guhindura ibipimo by'ibikoresho, dushyigikira uburyo nyabwo bwo kugenzura ubushobozi bwo guhangana n'ibintu mu ntera iri hagati ya 10⁶-10¹⁰ Ω·cm. By'umwihariko ku bikoresho bya gisirikare, dushobora gutanga uburyo bwo kurwanya cyane bwa >10⁹ Ω·cm. Itanga imiterere itatu y'ubugari bwa 200μm, 350μm na 500μm icyarimwe, hamwe n'ubushobozi bwo kwihanganira ibintu bugenzurwa neza muri ±10μm, buhuye n'ibisabwa bitandukanye kuva ku bikoresho bifite frequency nyinshi kugeza ku bikoresho bifite ingufu nyinshi.

Ku bijyanye n'uburyo bwo gutunganya ubuso, dutanga ibisubizo bibiri by'umwuga: Gutunganya hakoreshejwe ikoranabuhanga rya "Chemical Mechanical Polishing" (CMP) bishobora kugera ku bugari bw'ubuso bufite Ra<0.15nm, bigahura n'ibikenewe cyane mu gukura kwa epitaxial; Ikoranabuhanga ryo gutunganya ubuso bushobora kwihutisha umusaruro rishobora gutanga ubuso bworoshye cyane bufite ubugari bwa Sq<0.3nm n'ubugari bwa okiside busigaye <1nm, bikoroshya cyane uburyo bwo gutunganya mbere y'uko umukiriya abikora.

XKH itanga ibisubizo byihariye byihariye ku bikoresho bya SiC bya santimetero 6 bikingira ubushyuhe

1. Guhindura Ibipimo by'Ibikoresho
Dutanga uburyo bwo kuvugurura neza ubushobozi bwo kurwanya ikirere hagati ya 10⁶-10¹⁰ Ω·cm, hamwe n'uburyo bwihariye bwo kurwanya ikirere >10⁹ Ω·cm bukoreshwa mu gisirikare/mu kirere.

2. Ibisobanuro by'ubunini
Amahitamo atatu y’ubugari busanzwe:

· 200μm (yakozwe neza ku bikoresho bifite umurongo wo hejuru)

· 350μm (ibipimo bisanzwe)

· 500μm (yagenewe gukoreshwa mu ngufu nyinshi)
· Ubwoko bwose bugumana ubunini buto bwa ± 10μm.

3. Ikoranabuhanga ryo Gutunganya Ubuso

Gutunganya ikoranabuhanga rya Chemical Mechanical (CMP): Bigera ku rwego rwa atome rw'ubuso bungana na Ra<0.15nm, byuzuza ibisabwa bikomeye byo gukura kwa epitaxial kuri RF n'ibikoresho by'amashanyarazi.

4. Gutunganya ubuso bushobora kuba buteguye guterwa na Epi

· Itanga ubuso bworoshye cyane bufite ubukana bwa Sq<0.3nm

· Igenzura ubugari bwa okiside karemano kugeza kuri <1nm

· Bikuraho intambwe zigera kuri eshatu zo gutunganya ibicuruzwa mu bigo by'abakiriya