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Wafers za Silikoni Carbide SiC za santimetero 6 150 zo mu bwoko bwa 4H-N zo gukora ubushakashatsi ku mikorere ya MOS cyangwa SBD n'ubwoko bwa Dummy grade

Imashini za Silikoni Carbide SiC Wafers 6 za santimetero 150 zo mu bwoko bwa 4H-N zo gukora ubushakashatsi ku musaruro wa MOS cyangwa SBD n'ishusho y'indorerwamo.
  • Wafers za Silikoni Carbide SiC za santimetero 6 150 zo mu bwoko bwa 4H-N zo gukora ubushakashatsi ku mikorere ya MOS cyangwa SBD n'ubwoko bwa Dummy grade
  • Wafers za Silikoni Carbide SiC za santimetero 6 150 zo mu bwoko bwa 4H-N zo gukora ubushakashatsi ku mikorere ya MOS cyangwa SBD n'ubwoko bwa Dummy grade

Ibisobanuro bigufi:

Iyi substrate ya silikoni ya santimetero 6 ni ibikoresho bikora neza cyane bifite imiterere myiza y’umubiri n’imiti. Yakozwe mu bikoresho bya silikoni ya silikoni ya carbide ifite ubuziranenge bwinshi, igaragaza ubushobozi bwo gutwara ubushyuhe bwinshi, kudahungabana mu buryo bw’ikoranabuhanga, no kudahinduka mu bushyuhe bwinshi. Iyi substrate, ikozwe mu buryo bunoze kandi ifite ibikoresho byiza, yabaye ibikoresho bikunzwe cyane mu gukora ibikoresho by’ikoranabuhanga binoze mu nzego zitandukanye.


Ibiranga

Ahantu ho Gusaba

Ibuye rya silicon carbide imwe ya santimetero 6 rigira uruhare runini mu nganda nyinshi. Ubwa mbere, rikoreshwa cyane mu nganda za semiconductor mu gukora ibikoresho by'ikoranabuhanga bifite ingufu nyinshi nka transistors z'amashanyarazi, imiyoboro ihuriweho, na modules z'amashanyarazi. Uburyo bwayo bwo gutwara ubushyuhe bwinshi no kurwanya ubushyuhe bwinshi bituma ubushyuhe bukwirakwira neza, bigatuma habaho imikorere myiza no kwizerwa. Icya kabiri, wafers za silicon carbide ni ingenzi mu nzego z'ubushakashatsi mu guteza imbere ibikoresho bishya n'ibikoresho. Byongeye kandi, wafer ya silicon carbide ikoreshwa cyane mu bijyanye na optoelectronics, harimo no gukora LED na laser diodes.

Ibisobanuro by'ibicuruzwa

Ibuye rya silikoni carbide imwe ya santimetero 6 rifite umurambararo wa santimetero 6 (hafi mm 152.4). Ubukana bw'ubuso ni Ra < 0.5 nm, kandi ubunini ni 600 ± 25 μm. Ibuye rishobora guhindurwa rifite uburyo bwa N-type cyangwa P-type conductivity, hashingiwe ku byo abakiriya bakeneye. Byongeye kandi, rifite ubushobozi bwo kwihanganira igitutu no guhindagura.

Ingano 150±2.0mm(inchi 6)

Ubunini

350 μm±25μm

Icyerekezo

Kuri axis: <0001>±0.5°

Umurongo utari hagati y'umurongo: 4.0° ugana kuri 1120±0.5°
Ubwoko bwa polikopi 4H

Ubushobozi bwo kwirinda (Ω·cm)

4H-N

0.015 ~ 0.028 Ω · cm / 0.015 ~ 0.025ohm · cm

4/6H-SI

>1E5

Icyerekezo cy'ibanze cy'aho hantu hagororotse

{10-10}±5.0°

Uburebure bw'ibanze burambuye (mm)

 mm 47.5± mm 2.5

Inkombe

Chamfer

TTV/Umuheto /Umupfundo (um)

≤15 /≤40 /≤60

AFM Imbere (Si-isura)

Igiporuniya Ra≤1 nm

CMP Ra≤0.5 nm

LTV

≤3μm (10mm * 10mm)

≤5μm (10mm * 10mm)

≤10μm (10mm * 10mm)

Televiziyo ya TV

≤5μm

≤10μm

≤15μm

Igishishwa cya orange/umwobo/imivune/ubwandu/ibizinga/imirongo

 Nta na kimwe Nta na kimwe Nta na kimwe

imipaka

 Nta na kimwe Nta na kimwe Nta na kimwe

Iyi substrate ya silikoni ya santimetero 6 ni ibikoresho bikora neza cyane bikoreshwa cyane mu nganda za semiconductor, ubushakashatsi, na optoelectronics. Itanga ubushobozi bwiza bwo gutwara ubushyuhe, kudahungabana mu byuma, no kudashyuha cyane, bigatuma ikoreshwa mu gukora ibikoresho by'ikoranabuhanga bikoresha ingufu nyinshi no gukora ubushakashatsi bushya ku bikoresho. Dutanga uburyo butandukanye bwo kubikoresha no kubihindura kugira ngo duhuze n'ibyo abakiriya bakeneye bitandukanye bakeneye.Twandikire kugira ngo umenye byinshi ku birebana na wafer za silicon carbide!

Ishusho irambuye

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