Uduce twa Crystal y'imbuto ya SiC twakozwe mu buryo bwihariye Dia 205/203/208 4H-N Ubwoko bwa 4H-N bwo gutumanaho hakoreshejwe optique

Uduce twa Crystal y'imbuto ya SiC twakozwe mu buryo bwihariye Dia 205/203/208 Ubwoko bwa 4H-N bwo gutumanaho hakoreshejwe optique Ishusho yagaragaye

Ibisobanuro bigufi:

Imbuto za kristu z'imbuto za SiC (silicon carbide), nk'ingenzi mu gutwara ibikoresho bya semiconductor byo mu gisekuru cya gatatu, zikoresha ubwiyongere bwazo bw'ubushyuhe (4.9 W/cm·K), imbaraga zo kugabanya cyane (2–4 MV/cm), n'icyuho kinini (3.2 eV) kugira ngo bikore nk'ibikoresho by'ibanze bya optoelectronics, imodoka nshya zikoresha ingufu, itumanaho rya 5G, n'ibikoresho byo mu kirere. Binyuze mu ikoranabuhanga rigezweho ryo gukora nk'ubwikorezi bw'umwuka (PVT)na epitaxy y'ikinyabutabire (LPE), XKH itanga ubwoko bwa 4H/6H-N, irinda ubushyuhe, na substrates z'imbuto za polytype za 3C-SiC mu buryo bwa wafer bwa santimetero 2–12, hamwe n'ubucucike bw'imiyoboro mito munsi ya cm⁻² 0.3, uburinzi buri hagati ya mΩ·cm 20–23, n'ubushyuhe bw'ubuso (Ra) <0.2 nm. Serivisi zacu zirimo gukura kwa heteroepitaxial (urugero, SiC-on-Si), gukoresha uburyo bwa nanoscale precision machining (± 0.1 μm tolerance), no gutanga serivisi ku isi yose vuba, biha abakiriya ubushobozi bwo gutsinda inzitizi za tekiniki no kwihutisha ihindagurika rya karuboni no guhindura ibintu mu buryo bw'ubwenge.

Ohereza imeri kuri twe

Ibiranga

Ibipimo bya tekiniki

Urusenda rw'imbuto za karubide rwa silikoni
Ubwoko bwa polikopi	4H
Ikosa ry'icyerekezo cy'ubuso	4°ugana<11-20>±0.5º
Ubushobozi bwo kwirinda	guhindura ibintu
Ingano	205±0.5mm
Ubunini	600±50μm
Ubukana	CMP,Ra≤0.2nm
Ubucucike bw'imiyoboro mito	≤1 buri kimwe/cm2
Imikufi	≤5, Uburebure bwose ≤2 * Diameter
Uduce tw'inkombe/imirongo	Nta na kimwe
Ikimenyetso cya laser imbere	Nta na kimwe
Imikufi	≤2, Uburebure bwose ≤ Diameter
Uduce tw'inkombe/imirongo	Nta na kimwe
Uduce twa polytype	Nta na kimwe
Kugaragaza inyuma hakoreshejwe laser	1mm (uhereye ku nkombe yo hejuru)
Inkombe	Chamfer
Gupfunyika	Kaseti ifite imigozi myinshi

Ibiranga by'ingenzi

1. Imiterere ya Crystal n'imikorere y'amashanyarazi

· Guhagarara neza kwa Crystallographic: 100% 4H-SiC polytype dominance, nta na kimwe gikozwe muri crystalline inclusions (urugero, 6H/15R), hamwe na XRD rocking curve yuzuye ubugari kuri kimwe cya kabiri ntarengwa (FWHM) ≤32.7 arcsec.

· Uburyo bwo gutwara ibintu bwinshi: Uburyo bwo kugenda bwa electron bwa cm² 5,400/V·s (4H-SiC) n'uburyo bwo kugenda bw'umwobo bwa cm² 380/V·s, bituma ibikoresho bikoreshwa mu buryo bwo hejuru bishyirwaho.

·Ubukomere bw'imirasire: Ihangana n'imirasire ya neutron ya MeV 1 ifite urwego rwo kwangirika kwa displacement rwa 1×10¹⁵ n/cm², ikaba ari nziza cyane mu bikoresho by'indege n'ibikoresho bya kirimbuzi.

2. Imiterere y'ubushyuhe n'imikorere ya mekanike

· Ubushobozi budasanzwe bwo gutwara ubushyuhe: 4.9 W/cm·K (4H-SiC), inshuro eshatu kurusha silicon, ishyigikira imikorere iri hejuru ya 200°C.

· Koreji yo Kwagura Ubushyuhe Buke: CTE ya 4.0×10⁻⁶/K (25–1000°C), igenzura ko ihuye n'ibipfunyika bishingiye kuri silikoni kandi ikagabanya umuvuduko w'ubushyuhe.

3. Kugenzura no gutunganya neza inenge

· Ubucucike bwa micropipe: <0.3 cm⁻² (wafers za santimetero 8), ubucucike bwa dislocation <1,000 cm⁻² (byemejwe binyuze mu gushushanya KOH).

· Ubwiza bw'ubuso: CMP-yahinduwe kugeza kuri Ra <0.2 nm, yujuje ibisabwa ku buryo bwo kugorora bwa EUV.

Porogaramu z'ingenzi

Urubuga	Ingero z'ikoreshwa	Ibyiza bya tekiniki
Itumanaho ry'amajwi	module za laser za 100G/400G, silicon photonics hybrid modules	InP seed substrates ituma habaho direct bandgap (1.34 eV) na Si-based heteroepitaxy, bigabanya igihombo cyo guhuza optical.
Imodoka nshya zikoresha ingufu	Inverters za 800V zifite voltage nyinshi, chargers ziri mu bwato (OBC)	Ibyuma bya 4H-SiC bihangana na >1.200 V, bigabanya igihombo cyo gutwara umuvuduko ku kigero cya 50% n'ingano ya sisitemu ku kigero cya 40%.
Itumanaho rya 5G	Ibikoresho bya RF bya millimeter-wave (PA/LNA), amplifier y'amashanyarazi ya sitasiyo y'ibanze	Uduce duto twa SiC dukingira umuriro (resistivity >10⁵ Ω·cm) dutuma habaho integration ya passive ya frequency yo hejuru (60 GHz+).
Ibikoresho by'inganda	Ibikoresho bipima ubushyuhe bwinshi, transformateur z'amashanyarazi, moniteur za nucleus	InSb seed substrates (0.17 eV bandgap) itanga ubushobozi bwo kugaragaza imbaraga za rukuruzi kugeza kuri 300% @ 10 T.

Ibyiza by'ingenzi

Imbuto za kristu za SiC (silicon carbide) zitanga umusaruro udasanzwe hamwe n’ubushyuhe bwa 4.9 W/cm·K, imbaraga za MV/cm 2–4, n’umupaka wa 3.2 eV wide bandgap, bigatuma habaho ingufu nyinshi, frequency nyinshi, n’ubushyuhe bwinshi. Zifite ubucucike bwa mikorobe nta n'ubucucike bwa <1,000 cm⁻², izi substrates zemeza ko zizewe mu bihe bikomeye. Ubucucike bwazo bwa shimi n’ubuso buhuye na CVD (Ra <0.2 nm) bishyigikira iterambere rya heteroepitaxial (urugero, SiC-on-Si) kuri optoelectronics na EV power systems.

Serivisi za XKH:

1. Umusaruro wihariye

· Imiterere ya Wafer Ihindagurika: Wafer za santimetero 2–12 zifite imiterere y'uruziga, uruziga, cyangwa imiterere yihariye (± 0.01 mm yo kwihanganira).

· Kugenzura Doping: Doping itunganye ya azote (N) na aluminiyumu (Al) binyuze muri CVD, kugera ku bushyuhe buri hagati ya 10⁻³ na 10⁶ Ω·cm.

2. Ikoranabuhanga rigezweho mu gutunganya ibintuEse?

· Heteroepitaxy: SiC-on-Si (ijyanye n'imirongo ya silikoni ya santimetero 8) na SiC-on-Diamond (ikoreshwa ry'ubushyuhe >2,000 W/m·K).

· Kugabanya inenge: Gukata no gusya hydrogen kugira ngo bigabanye inenge za micropipe/density, bikongera umusaruro wa wafer kugeza kuri >95%.

3. Sisitemu zo gucunga ubuziranengeEse?

· Isuzuma kuva ku mpera kugeza ku mpera: Raman spectroscopy (igenzura rya polytype), XRD (crystallinity), na SEM (isesengura ry'ibisesenguzi).

· Impamyabushobozi: Iyujuje ibisabwa na AEC-Q101 (imodoka), JEDEC (JEDEC-033), na MIL-PRF-38534 (ifite ireme rya gisirikare).

4. Inkunga ku rwego rw'isi mu bijyanye n'uruhererekane rw'ibikoreshoEse?

· Ubushobozi bwo gukora: Uduce duto twa wafers turenga 10.000 buri kwezi (60% santimetero 8), hamwe n'ibigega bigezwa mu gihe cyihutirwa amasaha 48.

· Umuyoboro w’ibicuruzwa: Ubucuruzi mu Burayi, Amerika ya Ruguru, na Aziya-Pasifika binyuze mu ndege/amazi hakoreshejwe ipaki igenzurwa n’ubushyuhe.

5. Iterambere ry'Ubufatanye mu bya TekinikiEse?

· Laboratwari zihuriweho zo gusesengura no guteza imbere imikorere: Gukorana mu kunoza uburyo bwo gupakira module za SiC (urugero, guhuza DBC substrate).

· Uruhushya rwa IP: Gutanga uburenganzira bwo gukura kw'ikoranabuhanga rya GaN-on-SiC RF epitaxial kugira ngo bigabanye ikiguzi cy'ubushakashatsi n'iterambere ry'abakiriya.

Incamake

Imbuto za kristu za SiC (silicon carbide), nk'ibikoresho by'ingenzi, zirimo kuvugurura uruhererekane rw'inganda ku isi binyuze mu iterambere mu gukura kwa kristu, kugenzura inenge, no guhuza ibintu bitandukanye. Mu gukomeza guteza imbere kugabanya inenge za wafer, kongera umusaruro wa santimetero 2.5, no kwagura urubuga rwa heteroepitaxial (urugero, SiC-on-Diamond), XKH itanga ibisubizo byizewe kandi bihendutse ku bikoresho by'ikoranabuhanga, ingufu nshya, n'inganda zigezweho. Umuhango wacu wo guhanga udushya utuma abakiriya bayobora mu bijyanye no kutagira karuboni na sisitemu z'ubwenge, biganisha ku gihe gitaha cy'urusobe rw'ibinyabuzima bya semiconductor bifite icyuho kinini.