Uburyo bwa CVD bwo gukora ibikoresho fatizo bya SiC bifite isuku nyinshi mu itanura rya silikoni carbide synthesis kuri 1600℃

Ibisobanuro bigufi:

Igikoresho cya silicon carbide (SiC) synthesis furnace (CVD). Gikoresha ikoranabuhanga rya Chemical Vapor Deposition (CVD) ku masoko ya silicon ₄ gaseous (urugero: SiH₄, SiCl₄) mu bushyuhe bwinshi aho bigira ingaruka ku masoko ya karuboni (urugero: C₃H₈, CH₄). Igikoresho cy'ingenzi cyo guhinga kristu za silicon carbide zifite isuku nyinshi ku butaka (grafiti cyangwa imbuto za SiC). Iri koranabuhanga rikoreshwa cyane cyane mu gutegura kristu imwe ya SiC (4H/6H-SiC), ikaba ari yo bikoresho by'ingenzi byo gukora semiconductors zikoresha ingufu (nka MOSFET, SBD).

Ohereza imeri kuri twe

Ibiranga

Ihame ry'imikorere:

1. Ingufu zibanziriza ikoreshwa. Ingufu zikomoka kuri silikoni (urugero: SiH₄) n'izikomoka kuri karuboni (urugero: C₃H₈) zivanze mu rugero hanyuma zigashyirwa mu cyumba cy'imyitozo.

2. Gusenyuka kw'ubushyuhe bwinshi: Ku bushyuhe bwinshi bwa 1500 ~ 2300℃, gusenyuka kwa gaze bitanga atome zikora za Si na C.

3. Uburyo bwo gukora ku buso: Atome za Si na C zishyirwa ku buso bwa substrate kugira ngo zikore urwego rwa kristu ya SiC.

4. Gukura kwa kristu: Binyuze mu kugenzura ubushyuhe, urujya n'uruza rwa gazi n'umuvuduko, kugira ngo hagerwe ku gukura mu c-axis cyangwa a-axis.

Ibipimo by'ingenzi:

· Ubushyuhe: 1600~2200℃ (>2000℃ kuri 4H-SiC)

· Umuvuduko: 50~200mbar (umuvuduko muke wo kugabanya gazi)

· Igipimo cya gaze: Si/C≈1.0~1.2 (kugira ngo hirindwe inenge zo kongera Si cyangwa C)

Ibiranga by'ingenzi:

(1) Ubwiza bwa kristu
Ubucucike buke bw'inenge: ubucucike bwa microtubule < 0.5cm ⁻², ubucucike bwo kwimuka < 10⁴ cm⁻².

Uburyo bwo kugenzura ubwoko bwa polycrystalline: bushobora gukura 4H-SiC (isanzwe), 6H-SiC, 3C-SiC n'ubundi bwoko bwa crystal.

(2) Imikorere y'ibikoresho
Ubushyuhe bwinshi: ubushyuhe bwa grafiti cyangwa ubushyuhe burwanya, ubushyuhe >2300℃.

Kugenzura ubunini bw'ubushyuhe: ihindagurika ry'ubushyuhe ± 5℃, igipimo cyo gukura 10 ~ 50μm / h.

Sisitemu ya gaze: Igipimo cy'umuvuduko w'amazi gipima neza cyane (MFC), isuku ya gaze ≥99.999%.

(3) Ibyiza by'ikoranabuhanga
Ubuziranenge bwinshi: Ubunini bw'umwanda inyuma <10¹⁶ cm⁻³ (N, B, nibindi).

Ingano nini: Ishyigikira gukura kwa substrate ya SiC ya 6 "/8".

(4) Ikoreshwa ry'ingufu n'ikiguzi
Ingufu nyinshi zikoreshwa (200~500kW·h kuri buri itanura), zigize 30%~50% by'ikiguzi cyo gukora substrate ya SiC.

Porogaramu z'ingenzi:

1. Substrate y'amashanyarazi ya semiconductor: SiC MOSFETs zo gukora imodoka zikoresha amashanyarazi na inverters za photovoltaic.

2. Igikoresho cya Rf: 5G base station GaN-on-SiC epitaxial substrate.

3. Ibikoresho biremereye cyane mu bidukikije: ibikoresho bipima ubushyuhe bwinshi ku nganda z'indege n'ingufu za kirimbuzi.

Ibisobanuro bya tekiniki:

Ibisobanuro	Ibisobanuro birambuye
Ingano (Ub × Ub × Ub)	4000 x 3400 x 4300 mm cyangwa uhindure
Umurambararo w'icyumba cy'itanura	1100mm
Ubushobozi bwo gupakira	50kg
Igipimo ntarengwa cy'ubusa	10-2Pa (amasaha 2 nyuma yuko pompe ya molekile itangiye)
Igipimo cyo kwiyongera k'umuvuduko mu cyumba	≤10Pa/h (nyuma yo gukaranga)
Uburyo bwo guterura igipfukisho cyo hasi cy'itanura	1500mm
Uburyo bwo gushyushya	Gushyushya induction
Ubushyuhe ntarengwa mu itanura	2400°C
Ingufu zishyushya	2X40kW
Gupima ubushyuhe	Igipimo cy'ubushyuhe bwa infrared gifite amabara abiri
Ingano y'ubushyuhe	900~3000℃
Uburyo bwo kugenzura ubushyuhe neza	± 1°C
Ingano y'umuvuduko wo kugenzura	1 ~ 700mbar
Uburyo bwo kugenzura umuvuduko neza	1~5mbar ±0.1mbar; 5~100mbar ±0.2mbar; 100~700mbari ±0.5mbari
Uburyo bwo gupakira	Umutwaro muke;
Imiterere idasabwa	Ahantu ho gupimira ubushyuhe kabiri, aho gupakurura imodoka ya forklift.

Serivisi za XKH:

XKH itanga serivisi zuzuye ku bikoresho bya silicon carbide CVD, harimo guhindura ibikoresho (igishushanyo mbonera cy’ahantu hashyuha, imiterere ya sisitemu ya gaze), guteza imbere imikorere (kugenzura kristale, kunoza ubusembwa), amahugurwa ya tekiniki (gukoresha no kubungabunga) n’inkunga nyuma yo kugurisha (gutanga ibice by’ingenzi, gusuzuma kure) kugira ngo bifashe abakiriya kugera ku musaruro mwiza wa SiC substrate. Kandi itanga serivisi zo kuvugurura imikorere kugira ngo ikomeze kunoza umusaruro wa kristale no gukura neza.