Gallium Nitride kuri Silicon wafer ifite uburebure bwa santimetero 4 na santimetero 6. Igenamiterere rya Si Substrate, Resistivity, na N-type/P-type Amahitamo

Gallium Nitride kuri Silicon wafer 4cm 6cm Igenamiterere rya Si Substrate, Resistivity, na N-type/P-type Amahitamo Ishusho yagaragaye

Ibisobanuro bigufi:

Wafer zacu za Gallium Nitride kuri Silicon (GaN-on-Si) zagenewe guhaza ibyifuzo byiyongera by'ibikoresho by'ikoranabuhanga bikoresha inshuro nyinshi kandi bifite imbaraga nyinshi. Izi wafer ziboneka mu bunini bwa santimetero 4 na santimetero 6, zitanga amahitamo yo guhindura uburyo bwo gukoresha substrate ya Si, resistivity, na doping type (N-type/P-type) kugira ngo zihuze n'ibikenewe byihariye. Ikoranabuhanga rya GaN-on-Si rihuza ibyiza bya gallium nitride (GaN) na substrate ya silicon (Si) ihendutse, bigatuma habaho imicungire myiza y'ubushyuhe, imikorere myiza, no kwihuta mu guhinduranya. Bitewe n'aho zidafite imbaraga nyinshi kandi zidashobora guhindagurika cyane, izi wafer ni nziza cyane mu guhindura ingufu, gukoresha RF, no kohereza amakuru ku buryo bwihuse.

Ohereza imeri kuri twe

Ibiranga

●Umugozi munini:GaN (3.4 eV) itanga iterambere rikomeye mu mikorere yayo ikoresha frequency nyinshi, ingufu nyinshi, n'ubushyuhe bwinshi ugereranije na silicon isanzwe, bigatuma iba nziza cyane ku bikoresho by'amashanyarazi na amplifier za RF.
●Icyerekezo cya Si Substrate gishobora guhindurwa:Hitamo mu buryo butandukanye bwo gushyiramo ibintu kuri Si nka <111>, <100>, n'ubundi kugira ngo bihuze n'ibisabwa byihariye ku gikoresho.
●Ubushobozi bwo kwirinda ibintu byihariye:Hitamo hagati y'uburyo butandukanye bwo kurwanya Si, kuva kuri semi-insulation kugeza kuri high-resistivity na low-resistivity kugira ngo wongere imikorere y'igikoresho.
●Ubwoko bwo gukoresha imiti igabanya ubukana bw'ibiyobyabwenge:Iboneka mu bwoko bwa N cyangwa P-type doping kugira ngo ihuze n'ibisabwa n'ibikoresho by'amashanyarazi, transistors za RF, cyangwa LED.
●Umuvuduko mwinshi w'amashanyarazi:Udupira twa GaN-on-Si dufite voltage nyinshi yo kwangirika (kugeza kuri 1200V), bigatuma dushobora guhangana n'ikoreshwa ry'amashanyarazi menshi.
●Umuvuduko wihuta wo guhinduranya:GaN ifite uburyo bwo kugenda cyane kwa electron kandi ikaba ifite igihombo gito cyo guhinduranya kurusha silicon, bigatuma GaN-on-Si wafers iba nziza ku miyoboro yihuta cyane.
●Ubushyuhe Burushijeho Kubahwa:Nubwo silicon ifite ubushobozi buke bwo gutwara ubushyuhe, GaN-on-Si iracyatanga ubushyuhe buhamye, hamwe no gukwirakwiza ubushyuhe neza kurusha ibikoresho bisanzwe bya silicon.

Ibisobanuro bya tekiniki

Igipimo	Agaciro
Ingano ya Wafer	Santimetero 4, santimetero 6
Icyerekezo cya Si Substrate	<111>, <100>, icyitegererezo
Ubushobozi bwo kwirinda	Irwanya cyane, Irinda ubushyuhe bwinshi, Irinda buhoro
Ubwoko bwa doping	Ubwoko bwa N, ubwoko bwa P
Ubunini bw'urwego rwa GaN	100 nm – 5000 nm (ishobora guhindurwa)
Urukuta rw'urukuta rwa AlGaN	24% – 28% Al (ubusanzwe 10-20 nm)
Ingano y'amashanyarazi	600V – 1200V
Uburyo bwo kugenda bwa Electron	2000 cm²/V·s
Inshuro zo Guhinduranya	Kugeza kuri 18 GHz
Ubuso bw'umugati buteye ubwoba	RMS ~0.25 nm (AFM)
Ubudahangarwa bw'urupapuro rwa GaN	437.9 Ω·cm²
Igishushanyo mbonera cy'umugati wose	< 25 µm (ntarengwa)
Ubushobozi bwo gutwara ubushyuhe	1.3 – 2.1 W/cm·K

Porogaramu

Ingufu z'amashanyarazi: GaN-on-Si ni nziza cyane ku bikoresho by'ikoranabuhanga bikoresha ingufu nka amplifiers, converters, na inverters bikoreshwa mu ngufu zisubira, imodoka zikoresha amashanyarazi (EVs), n'ibikoresho by'inganda. Umuvuduko wayo mwinshi wo kwangirika no kudakomera cyane bituma ingufu zihinduka neza, ndetse no mu bikoresho bikoresha ingufu nyinshi.

Itumanaho rya RF na Microwave: GaN-on-Si wafers zitanga ubushobozi bwo gukoresha frequency yo hejuru, bigatuma ziba nziza cyane kuri amplifier za RF, itumanaho rya satelite, sisitemu za radar, na ikoranabuhanga rya 5G. Zifite umuvuduko wo guhinduranya amakuru kandi zikabasha gukora ku frequency yo hejuru (kugeza kuri18 GHz), Ibikoresho bya GaN bitanga imikorere myiza muri izi porogaramu.

Ibyuma by'ikoranabuhanga by'imodoka: GaN-on-Si ikoreshwa mu buryo bw'ingufu z'imodoka, harimocharger ziri mu ndege (OBCs)naAbahindura DC-DCUbushobozi bwayo bwo gukora ku bushyuhe bwinshi no kwihanganira ingano y'amashanyarazi menshi butuma ikwiranye neza n'ibikoresho by'amashanyarazi bisaba guhindura ingufu cyane.

LED na Optoelectronics: GaN ni ibikoresho by'ingenzi cyane kuri amatara ya LED y'ubururu n'umweru. Amakara ya GaN-on-Si akoreshwa mu gukora sisitemu zo kumurika za LED zikora neza cyane, zitanga imikorere myiza mu kumurika, ikoranabuhanga ryo kwerekana, no gutumanaho.

Ibibazo n'Ibisubizo

Q1: Ni iyihe nyungu ya GaN ugereranyije na silicon mu bikoresho by'ikoranabuhanga?

A1:GaN ifiteicyuho kinini (3.4 eV)kurusha silikoni (1.1 eV), ituma ishobora kwihanganira voltage n'ubushyuhe bwinshi. Iyi miterere ituma GaN ishobora gukora neza cyane ku ngufu nyinshi, ikagabanya igihombo cy'amashanyarazi no kongera imikorere ya sisitemu. GaN kandi itanga umuvuduko wihuta wo guhinduranya, ibyo bikaba ari ingenzi ku bikoresho bifite umurongo munini nka RF amplifiers na power converters.

Q2: Ese nshobora guhindura icyerekezo cya substrate ya Si kugira ngo ikoreshwe?

A2:Yego, turatangaicyerekezo cya substrate cya Si gihindukanka<111>, <100>, n'izindi cyerekezo bitewe n'ibyo igikoresho cyawe gikeneye. Cyerekezo cya substrate ya Si kigira uruhare runini mu mikorere y'igikoresho, harimo imiterere y'amashanyarazi, imikorere y'ubushyuhe, no kudahungabana kwa mekanike.

Q3: Ni izihe nyungu zo gukoresha wafer za GaN-on-Si mu gukoresha inshuro nyinshi?

A3:Wafer za GaN-on-Si zitanga umusaruro mwiza cyaneumuvuduko wo guhinduranya, bigatuma habaho kwihuta mu mikorere ku buryo bwo hejuru ugereranije na silikoni. Ibi bituma biba byiza cyane kuriRFnamikoroondeporogaramu, ndetse n'ikoreshwa ry'inshuro nyinshiibikoresho by'amashanyarazinkaHEMTs(Transistors zo mu bwoko bwa High Electron Mobility) naamplifiers za RF. Gukoresha electron nyinshi za GaN nabyo bituma habaho igihombo gito mu guhindura amashanyarazi no kunoza imikorere.

Q4: Ni ubuhe buryo bwo gukoresha imiti igabanya ubukana buboneka kuri wafer za GaN-on-Si?

A4:Dutanga byombiUbwoko bwa NnaUbwoko bwa Pamahitamo yo gukoresha imiti igabanya ubukana bw'ibiyobyabwenge, akunze gukoreshwa ku bwoko butandukanye bw'ibikoresho bya semiconductor.Gukoresha imiti igabanya ubukana bw'ubwoko bwa Nni byiza cyane kuritransistors z'amashanyarazinaamplifiers za RFmu giheGukoresha imiti igabanya ubukana bwa P-typeikunze gukoreshwa ku bikoresho bya optoelectronic nka LEDs.

Umwanzuro

Wafer zacu za Gallium Nitride zikozwe ku giti cya Silicon (GaN-on-Si) zitanga igisubizo cyiza cyo gukoresha mu buryo bworoshye, imbaraga nyinshi, n'ubushyuhe bwinshi. Hamwe n'uburyo bwo guhindura imiterere ya Si substrate, resistivity, na N-type/P-type doping, izi wafers zakozwe kugira ngo zihuze n'ibyo zikeneye byihariye by'inganda kuva ku byuma bikoresha ingufu n'ibinyabiziga kugeza ku itumanaho rya RF na LED. Zikoresheje imiterere myiza ya GaN n'ubushobozi bwa silicon, izi wafers zitanga imikorere myiza, imikorere myiza, no kurinda ejo hazaza ku bikoresho bizaza.