HPSI SiC wafer dia: 3cm ubugari: 350um ± 25 µm kuri Power Electronics

Ibisobanuro bigufi:

Wafer ya HPSI (High-Purity Silicon Carbide) SiC ifite umurambararo wa santimetero 3 n'ubugari bwa 350 µm ± 25 µm yagenewe by'umwihariko gukoreshwa mu bikoresho by'ikoranabuhanga bikoresha ingufu zikenera substrates zikora neza. Iyi wafer ya SiC itanga ubushobozi bwo gutwara ubushyuhe bwinshi, voltage nyinshi yo kwangirika, n'ubushobozi bwiza mu bushyuhe bwinshi, bigatuma iba amahitamo meza ku gikenewe gikomeje kwiyongera cy'ibikoresho by'ikoranabuhanga bikoresha ingufu nke kandi zikomeye. Wafer za SiC zikwiriye cyane cyane gukoreshwa mu bikoresho bifite voltage nyinshi, umuriro mwinshi, n'umuvuduko mwinshi, aho substrates za silicon zisanzwe zidashobora guhaza ibyifuzo by'imikorere.
Wafer yacu ya HPSI SiC, yakozwe hakoreshejwe ubuhanga bugezweho mu nganda, iboneka mu byiciro bitandukanye, buri kimwe cyagenewe kuzuza ibisabwa mu nganda. Wafer igaragaza imiterere myiza y’imiterere, imiterere y’amashanyarazi, n’ubwiza bw’ubuso, bigatuma ishobora gutanga imikorere yizewe mu bikorwa bigoye, birimo semiconductors z’amashanyarazi, imodoka zikoresha amashanyarazi (EVs), sisitemu z’ingufu zisubira, n’ingufu zikoreshwa mu nganda.

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Ibiranga

Porogaramu

Wafer za HPSI SiC zikoreshwa mu buryo butandukanye bw'ikoranabuhanga rikoresha ingufu, harimo:

Ingufu zikoresha semiconductors:Udupira twa SiC dukunze gukoreshwa mu gukora diode z'amashanyarazi, transistors (MOSFETs, IGBTs), na thyristors. Izi semiconductors zikoreshwa cyane mu guhindura ingufu zisaba imikorere myiza no kwizerwa, nko mu nganda zitwara moteri, amashanyarazi, na inverters zo gukoresha ingufu zisubira.
Imodoka zikoresha amashanyarazi (EV):Mu byuma bikoresha amashanyarazi, ibikoresho by'amashanyarazi bishingiye kuri SiC bitanga umuvuduko wihuta wo guhinduranya ingufu, gukoresha ingufu neza, no kugabanya igihombo cy'ubushyuhe. Ibice bya SiC ni byiza cyane mu gukoresha muri sisitemu yo gucunga bateri (BMS), ibikorwa remezo byo gusharija, no mu byuma bikoresha amashanyarazi (OBCs), aho kugabanya uburemere no kongera ubushobozi bwo guhindura ingufu ari ingenzi cyane.

Sisitemu z'ingufu zisubira:Uduce twa SiC dukoreshwa cyane mu byuma bihindura ingufu z'izuba, moteri zitanga turbine z'umuyaga, na sisitemu zo kubika ingufu, aho imikorere myiza n'ubudahangarwa ari ngombwa. Ibice bishingiye kuri SiC bituma ingufu nyinshi ziyongera kandi bigatuma habaho imikorere myiza muri izi porogaramu, bikongera imikorere myiza muri rusange yo guhindura ingufu.

Ingufu z'amashanyarazi mu nganda:Mu nganda zikora neza cyane, nka moteri zitwara moteri, roboti, n'amashanyarazi menshi, ikoreshwa rya SiC wafers rituma habaho imikorere myiza mu bijyanye n'imikorere myiza, ubwizerwe, no gucunga ubushyuhe. Ibikoresho bya SiC bishobora guhangana n'umuvuduko mwinshi wo guhinduranya ibikoresho n'ubushyuhe bwinshi, bigatuma biba byiza ahantu hakenera cyane.

Ibigo by'itumanaho n'amakuru:SiC ikoreshwa mu gutanga amashanyarazi ku bikoresho by'itumanaho no ku bigo by'amakuru, aho kuba ingirakamaro cyane no guhindura amashanyarazi neza. Ibikoresho by'amashanyarazi bishingiye kuri SiC bituma habaho imikorere myiza cyane ku ngano nto, ibyo bigatuma habaho kugabanuka kw'ikoreshwa ry'amashanyarazi no kunoza imikorere myiza mu bikorwa remezo binini.

Umuvuduko mwinshi w’amashanyarazi, ubushobozi buke bwo kudakoresha ingufu, hamwe n’ubushobozi bwiza bwo gutwara ubushyuhe bwa SiC wafers bituma ziba ahantu heza ho gukoresha izi porogaramu zigezweho, bigatuma habaho iterambere ry’ibikoresho by’ikoranabuhanga bikoresha ingufu nke mu gihe kizaza.

Imitungo

Umutungo	Agaciro
Ingano ya Wafer	Santimetero 76.2 (76.2 mm)
Ubunini bwa Wafer	350 µm ± 25 µm
Icyerekezo cya Wafer	<0001> kuri-axis ± 0.5°
Ubucucike bw'imiyoboro mito (MPD)	≤ 1 cm⁻²
Ubushobozi bwo guhangana n'amashanyarazi	≥ 1E7 Ω·cm
Dopant	Byakuweho
Icyerekezo cy'ibanze cy'ubugari	{11-20} ± 5.0°
Uburebure bw'ibanze bw'ikiraro	mm 32.5 ± mm 3.0
Uburebure bwa kabiri bw'ikiraro	18.0 mm ± 2.0 mm
Icyerekezo cya kabiri cy'icyitegererezo	Ubushyuhe bwo hejuru: 90° CW uvuye mu nzu y'ibanze ± 5.0°
Kutagaragaza Edge	mm 3
LTV/TTV/Umuheto/Umupfundo	3 µm / 10 µm / ± 30 µm / 40 µm
Ubukana bw'ubuso	Isura ya C: Irasekuye, Isura ya Si: CMP
Uduce (tugenzurwa n'urumuri rwinshi)	Nta na kimwe
Hex Plates (igenzurwa n'urumuri rwinshi)	Nta na kimwe
Uduce twa Polytype (tugenzurwa n'urumuri rwinshi)	Agace k'ikusanyirizo 5%
Imikufi (igenzurwa n'urumuri rwinshi)	≤ imikufi 5, uburebure buhuriweho ≤ mm 150
Gukata inkombe	Nta na kimwe cyemewe ubugari n'ubujyakuzimu bwa ≥ 0.5 mm
Kwanduzwa n'ubuso (bigenzurwa n'urumuri rwinshi)	Nta na kimwe

Ibyiza by'ingenzi

Ubushobozi bwo gutwara ubushyuhe bwinshi:Udupira twa SiC tuzwiho ubushobozi budasanzwe bwo gusohora ubushyuhe, ibyo bigatuma ibikoresho by'amashanyarazi bikora neza kandi bigafata umuvuduko mwinshi nta gushyuha cyane. Iyi miterere ni ingenzi mu by'ikoranabuhanga aho gucunga ubushyuhe ari ikibazo gikomeye.
Umuvuduko mwinshi w'amashanyarazi:Icyuho kinini cya SiC gituma ibikoresho bishobora kwihanganira ingano y’amashanyarazi ari hejuru, bigatuma biba byiza cyane mu gukoresha ingufu nyinshi nko gukoresha imiyoboro y’amashanyarazi, imodoka zikoresha amashanyarazi, n’imashini z’inganda.
Umusaruro mwinshi:Uruvange rw'imivuduko yo guhinduranya ingufu nyinshi hamwe no kudakoresha ingufu nyinshi bituma ibikoresho bitakaza ingufu nke, bikongera imikorere myiza yo guhinduranya ingufu no kugabanya gukenera uburyo bugoye bwo gukonjesha.
Kwizerwa mu bidukikije bikomeye:SiC irashobora gukora ku bushyuhe bwinshi (kugeza kuri 600°C), ibi bigatuma ikoreshwa mu bidukikije byakwangiza ibikoresho bisanzwe bishingiye kuri silikoni.
Kuzigama Ingufu:Ibikoresho by'amashanyarazi bya SiC byongera imikorere myiza yo guhindura ingufu, ibi bikaba ari ingenzi mu kugabanya ikoreshwa ry'amashanyarazi, cyane cyane mu buryo bunini nka za mashini zihindura ingufu mu nganda, imodoka zikoresha amashanyarazi, n'ibikorwa remezo by'ingufu zishobora kuvugururwa.