Uburyo SiC na GaN birimo guhindura uburyo bwo gupakira ibikoresho bya semiconductor by'amashanyarazi

Inganda zikora ibikoresho bya semiconductor zikoresha ingufu zirimo guhinduka bitewe no gukoresha vuba ibikoresho bya WBG (wide-bandgap).Karubide ya silikoni(SiC) na Gallium Nitride (GaN) biri ku isonga muri iyi mpinduramatwara, bigatuma ibikoresho by'amashanyarazi byo mu gisekuru gitaha bikora neza cyane, bihinduranya vuba, kandi bikora neza cyane. Ibi bikoresho ntibisobanura gusa imiterere y'amashanyarazi ya semiconductors z'amashanyarazi ahubwo binatanga imbogamizi n'amahirwe mashya mu ikoranabuhanga ryo gupakira. Gupakira neza ni ingenzi kugira ngo haboneke ubushobozi bw'ibikoresho bya SiC na GaN, bitume habaho kwizerwa, imikorere, no kuramba mu bikorwa bikomeye nk'imodoka zikoresha amashanyarazi (EVs), sisitemu z'ingufu zisubira, n'ibikoresho by'ikoranabuhanga bikoresha ingufu z'inganda.

Ibyiza bya SiC na GaN

Ibikoresho bishya by’amashanyarazi bya silikoni (Si) bimaze imyaka myinshi byiganje ku isoko. Ariko, uko umubare w’ibikoresho bishya byiyongera ku bucucike bw’ingufu, imikorere myiza, n’imiterere mito, silikoni ihura n’imbogamizi:

• Umuvuduko muto w'amashanyarazi, bigatuma bigorana gukora mu mutekano ku muvuduko mwinshi.

• Umuvuduko wo guhinduranya ugenda gahoro, biganisha ku kwiyongera kw'igihombo cyo guhindura amakuru mu bikorwa bikunze gukoreshwa cyane.

• Ubushobozi bwo gutwara ubushyuhe buri hasi, bigatuma ubushyuhe bwiyongera kandi hagakenerwa cyane gukonjesha.

SiC na GaN, nk'ibikoresho bya WBG semiconductors, byatsinze izi mbogamizi:

• SiCItanga ingufu nyinshi zo kwangirika, ubushobozi bwo gutwara ubushyuhe bwiza (inshuro 3-4 z'ubushyuhe bwa silicon), kandi ikaba ikwiriye gukoreshwa mu gukoresha ingufu nyinshi nka inverters na moteri zitwara.

• GaNitanga uburyo bwo guhinduranya bwihuse cyane, ubushobozi bwo kudakoresha ingufu nyinshi, kandi ikaba ifite ubushobozi bwo kugenda neza cyane, bigatuma ibyuma bihindura ingufu bito kandi bikoresha imbaraga nyinshi bikora ku murongo wo hejuru.

Bakoresheje izi nyungu z'ibikoresho, injeniyeri zishobora gushushanya sisitemu z'amashanyarazi zifite imikorere myiza, ingano nto, kandi zinoze.

Ingaruka ku gupakira amashanyarazi

Nubwo SiC na GaN binoza imikorere y'ibikoresho ku rwego rwa semiconductor, ikoranabuhanga ryo gupakira rigomba guhinduka kugira ngo rikemure ibibazo by'ubushyuhe, amashanyarazi, na mekanike. Ibintu by'ingenzi bigomba kwitabwaho harimo:

1. Imicungire y'ubushyuhe
   Ibikoresho bya SiC bishobora gukora ku bushyuhe burenze 200°C. Gukwirakwiza ubushyuhe neza ni ingenzi kugira ngo hirindwe ko ubushyuhe bugenda nabi kandi bikomeze kuba ingirakamaro mu gihe kirekire. Ibikoresho bigezweho byo guhuza ubushyuhe (TIMs), ibyuma bikoresha umuringa na molybdenum, hamwe n'imiterere myiza yo gukwirakwiza ubushyuhe ni ingenzi. Ibitekerezo ku bushyuhe nabyo bigira ingaruka ku ishyirwa ry'ibikoresho, imiterere ya module, n'ingano y'ibikoresho byose.

2. Imikorere y'amashanyarazi n'imiti itera indwara
   Umuvuduko mwinshi wa GaN utuma parasitiki zikoreshwa mu gukwirakwiza amashanyarazi—nk'ingufu n'ubushobozi—zigomba kuba ingenzi cyane. Ndetse n'ibintu bito bishobora gutuma habaho gushyuha cyane kw'amashanyarazi, kubangamira amashanyarazi (EMI), no gutakaza ingufu. Ingamba zo gupakira amashanyarazi nko gufungana kuri flip-chip, imiyoboro migufi y'amashanyarazi, na imiterere y'amashanyarazi yashyizwemo iragenda ikoreshwa cyane kugira ngo igabanye ingaruka za parasitiki.

3. Kwizerwa kwa mekanike
   SiC irapfa kwangirika, kandi ibikoresho bya GaN-on-Si birahangayikishwa cyane n'imihangayiko. Gupfunyika bigomba gukemura ikibazo cyo kwaguka k'ubushyuhe, kugorana, no kunanirwa kwa mashini kugira ngo ibikoresho bikomeze kuba byiza mu gihe cy'ubushyuhe n'amashanyarazi. Ibikoresho bifatanye n'ibikoresho bidakoresha stress nyinshi, substrates zijyanye n'ibyo, hamwe n'ibikoresho bikomeye bifasha kugabanya izi ngaruka.

4. Gushyira hamwe no gukora ku buryo buciriritse
   Ibikoresho bya WBG bitanga ingufu nyinshi, ibyo bikaba bituma abantu bakenera amapaki mato. Uburyo bugezweho bwo gupakira—nk'ibice binini (CoB), gukonjesha impande ebyiri, no guhuza sisitemu (SiP)—bituma abashushanya bagabanya imikorere yabo mu gihe bakomeza gukora no kugenzura ubushyuhe. Miniaturization kandi ishyigikira imikorere yihuse no gusubiza vuba muri sisitemu z'amashanyarazi.

Ibisubizo byo gupakira biri kugaragara

Havutse uburyo butandukanye bushya bwo gupfunyika kugira ngo bushyigikire ikoreshwa rya SiC na GaN:

• Uduce duto tw'umuringa dufatanye (DBC)kuri SiC: Ikoranabuhanga rya DBC rituma ubushyuhe bukwirakwira neza kandi rigatuma imikorere ya mashini ihora ihindagurika mu gihe cy'imirasire myinshi.

• Ibishushanyo bya GaN-on-Si byashyizwemo: Ibi bigabanya uburyo bwo gukwirakwiza ibintu mu buryo bwa parasite kandi bigatuma habaho guhinduranya vuba cyane mu buryo buciriritse.

• Gufunga mu bushyuhe bwinshi: Ibikoresho bigezweho byo gushushanya hamwe n'ibikoresho byo hasi bidatera stress bibuza gucika no gucika kw'ingufu mu gihe cy'ubushyuhe.

• Module za 3D na Multi-Chip: Gushyira hamwe ibikoresho by'amashanyarazi, sensor, n'ibikoresho by'amashanyarazi muri paki imwe binoza imikorere y'urwego rwa sisitemu kandi bigabanya umwanya w'ikibaho.

Utu dushya tugaragaza uruhare runini rw'ibipfunyika mu gufunguza ubushobozi bwose bwa WBG semiconductors.

Umwanzuro

SiC na GaN bihindura cyane ikoranabuhanga rya semiconductor y'amashanyarazi. Imiterere yabyo ihanitse y'amashanyarazi n'ubushyuhe ituma ibikoresho byihuta, bikora neza kandi bishobora gukora ahantu hagoye. Ariko, kugera kuri izi nyungu bisaba ingamba zihanitse zo gupakira zigamije gucunga ubushyuhe, imikorere y'amashanyarazi, ubwizigirwa mu by'ikoranabuhanga, no gukora buhoro. Ibigo bihanga udushya mu gupakira SiC na GaN bizayobora igisekuru gitaha cy'ibikoresho by'ikoranabuhanga bikoresha ingufu, bishyigikira sisitemu zikoresha ingufu nke kandi zikora neza mu nzego z'imodoka, inganda, n'ingufu zishobora kongera gukoreshwa.

Muri make, impinduramatwara mu gupakira ibikoresho bya semiconductor bifite ingufu ntishobora gutandukanywa no kwiyongera kwa SiC na GaN. Uko inganda zikomeje gutera imbere mu kunoza imikorere, ubucucike bwinshi, no kwizerwa cyane, gupakira ibikoresho bizagira uruhare runini mu guhindura ibyiza by’ibikoresho bya semiconductor bifite icyuho kinini mu bisubizo bifatika kandi bishobora gukoreshwa.