Wafer Substrates nkibikoresho byingenzi mubikoresho bya Semiconductor
Wafer substrates niyitwara ryumubiri wibikoresho bya semiconductor, kandi ibintu bifatika bigena neza imikorere yibikoresho, igiciro, hamwe nimirima ikoreshwa. Hasi nubwoko bwibanze bwa wafer substrates hamwe nibyiza nibibi:
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Umugabane w'isoko:Konti irenga 95% yisoko rya semiconductor kwisi yose.
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Ibyiza:
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Igiciro gito:Ibikoresho fatizo byinshi (dioxyde de silicon), uburyo bwo gukora bukuze, nubukungu bukomeye bwikigereranyo.
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Guhuza inzira yo hejuru:Ikoranabuhanga rya CMOS rirakuze cyane, rishyigikira imiyoboro igezweho (urugero, 3nm).
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Ubwiza buhebuje bwa kirisiti:Waferi nini ya diameter (cyane cyane 12-santimetero, 18-santimetero iri gukura) ifite ubucucike buke burashobora gukura.
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Ibikoresho bihamye:Biroroshye gukata, gusiga, no gufata.
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Ibibi:
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Umuyoboro muto (1.12 eV):Umuvuduko mwinshi utemba hejuru yubushyuhe bwo hejuru, bigabanya ingufu zamashanyarazi.
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Indirimbo itaziguye:Umucyo muke cyane wohereza ibyuka, ntibikwiriye kubikoresho bya optoelectronic nka LED na laseri.
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Kugenda kwa elegitoronike kugarukira:Imikorere yo hasi cyane-ugereranije ugereranije na semiconductor.

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Porogaramu:Ibikoresho byinshi bya RF (5G / 6G), ibikoresho bya optoelectronic (laseri, selile izuba).
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Ibyiza:
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Umuvuduko mwinshi wa electron (5–6 × ya silicon):Birakwiriye kwihuta, kwihuta-kwinshi nka milimetero-itumanaho.
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Bandgap itaziguye (1.42 eV):Ihinduka ryiza cyane ryamashanyarazi, umusingi wa lazeri ya infragre na LED.
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Ubushyuhe bwinshi no kurwanya imirasire:Birakwiriye ikirere hamwe nibidukikije bikaze.
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Ibibi:
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Igiciro kinini:Ibikoresho bike, gukura kwa kristu bigoye (bikunda gutandukana), ubunini bwa wafer bugarukira (cyane cyane 6-cm).
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Abakanishi bavunitse:Gukunda kuvunika, bikavamo umusaruro muke wo gutunganya.
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Uburozi:Arsenic isaba gufata neza no kugenzura ibidukikije.
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3. Silicon Carbide (SiC)
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Porogaramu:Ubushyuhe bwo hejuru hamwe n’ibikoresho byamashanyarazi menshi (EV inverters, sitasiyo yumuriro), ikirere.
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Ibyiza:
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Umuyoboro mugari (3.26 eV):Imbaraga zo gusenyuka cyane (10 × za silicon), kwihanganira ubushyuhe bwinshi (ubushyuhe bwo gukora> 200 ° C).
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Amashanyarazi menshi (≈3 × silicon):Gukwirakwiza ubushyuhe buhebuje, butuma sisitemu yo hejuru yubucucike.
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Igihombo gito cyo guhinduranya:Kunoza imbaraga zo guhindura imikorere.
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Ibibi:
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Ingorabahizi yo gutegura substrate:Gutinda gukura kwa kristu (> icyumweru 1), kugenzura inenge bigoye (micropipes, dislocations), igiciro kinini cyane (5-10 × silicon).
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Ingano ntoya ya wafer:Ahanini santimetero 4-6; 8-santimetero iracyakorwa.
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Biragoye gutunganya:Birakomeye cyane (Mohs 9.5), gukora gukata no gutonesha bitwara igihe.
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4. Gallium Nitride (GaN)
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Porogaramu:Ibikoresho byamashanyarazi menshi (kwishyuza byihuse, 5G base base), LEDs z'ubururu / laseri.
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Ibyiza:
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Ultra-high mobile mobile + ubugari bwagutse (3.4 eV):Ihuza imirongo myinshi (> 100 GHz) hamwe nubushobozi bwa voltage.
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Kurwanya bike:Kugabanya gutakaza ibikoresho.
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Heteroepitaxy irahuye:Mubisanzwe bihingwa kuri silicon, safiro, cyangwa SiC substrates, kugabanya ibiciro.
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Ibibi:
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Ubwinshi bwa kristu yo gukura bigoye:Heteroepitaxy ninzira nyamukuru, ariko kudahuza lattice bizana inenge.
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Igiciro kinini:Kavukire ya GaN ihenze cyane (wafer ya santimetero 2 irashobora kugura ibihumbi byinshi USD).
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Ibibazo byizewe:Fenomena nko gusenyuka kurubu bisaba gukora neza.
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5. Indium Fosifide (InP)
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Porogaramu:Itumanaho ryihuta rya optique (laseri, fotodetektor), ibikoresho bya terahertz.
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Ibyiza:
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Ultra-high mobile electronique:Shyigikira> 100 GHz imikorere, irusha GaAs.
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Igikoresho cyerekanwe hamwe nuburebure bwumurongo:Ibikoresho byingenzi kuri 1.3–1.55 μm itumanaho rya fibre optique.
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Ibibi:
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Kumeneka kandi bihenze cyane:Igiciro cya substrate kirenga 100 × silicon, ingano ya wafer ntarengwa (4-6 cm).
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6. Safiro (Al₂O₃)
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Ibyiza:
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Igiciro gito:Bihendutse cyane kurenza SiC / GaN substrates.
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Imiti myiza ihamye:Kurwanya ruswa, irinda cyane.
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Gukorera mu mucyo:Bikwiranye nuburyo buhagaritse LED.
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Ibibi:
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Umuyoboro munini udahuye na GaN (> 13%):Bitera ubucucike bukabije, busaba ibice bya buffer.
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Amashanyarazi mabi (~ 1/20 cya silicon):Kugabanya imikorere ya LED ifite ingufu nyinshi.
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7. Ceramic Substrates (AlN, BeO, nibindi)
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Porogaramu:Shyushya gukwirakwiza amashanyarazi menshi.
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Ibyiza:
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Gukingura + ubushyuhe bwinshi (AlN: 170-230 W / m · K):Birakwiriye gupakira cyane.
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Ibibi:
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Ntabwo ari kristu:Ntushobora gushyigikira byimazeyo ibikoresho bikura, bikoreshwa gusa nkibikoresho byo gupakira.
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8. Inzira zidasanzwe
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SOI (Silicon kuri Insulator):
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Imiterere:Silicon / SiO₂ / silicon sandwich.
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Ibyiza:Kugabanya ubushobozi bwa parasitike, gukomera-imirasire, guhagarika kumeneka (bikoreshwa muri RF, MEMS).
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Ibibi:30-50% bihenze kuruta silicon nyinshi.
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Quartz (SiO₂):Ikoreshwa muri fotomasike na MEMS; ubushyuhe bwo hejuru ariko biroroshye cyane.
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Diamond:Ubushyuhe bwo hejuru cyane (> 2000 W / m · K), munsi ya R&D kugirango ubushyuhe bukabije.
Imbonerahamwe Incamake
| Substrate | Bandgap (eV) | Imikorere ya elegitoronike (cm² / V · s) | Amashanyarazi (W / m · K) | Ingano nyamukuru ya Wafer | Ibyingenzi | Igiciro |
|---|---|---|---|---|---|---|
| Si | 1.12 | ~ 1.500 | ~ 150 | 12-cm | Ibitekerezo / Kwibuka | Hasi |
| GaAs | 1.42 | ~ 8.500 | ~ 55 | 4-6 | RF / Optoelectronics | Hejuru |
| SiC | 3.26 | ~ 900 | ~ 490 | 6-santimetero (8-cm R&D) | Ibikoresho by'ingufu / EV | Hejuru cyane |
| GaN | 3.4 | ~ 2000 | ~ 130–170 | 4-6 cm (heteroepitaxy) | Kwishyuza byihuse / RF / LED | Hejuru (heteroepitaxy: hagati) |
| InP | 1.35 | ~ 5.400 | ~ 70 | 4-6 | Itumanaho ryiza / THz | Birakabije |
| Safiro | 9.9 (insulator) | - | ~ 40 | 4-8 | LED substrates | Hasi |
Ibintu by'ingenzi byo guhitamo Substrate
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Ibisabwa mu mikorere:GaAs / InP kumurongo mwinshi; SiC kuri voltage nyinshi, ubushyuhe bwinshi; GaAs / InP / GaN kuri optoelectronics.
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Inzitizi y'ibiciro:Abaguzi ba elegitoroniki bakunda silicon; imirima ihanitse irashobora gutsindishiriza ibihembo bya SiC / GaN.
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Kwishyira hamwe:Silicon ikomeza gusimburwa kugirango CMOS ihuze.
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Imicungire yubushyuhe:Porogaramu zifite ingufu nyinshi zikunda SiC cyangwa diyama ishingiye kuri GaN.
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Gutanga urunigi rukuze:Si> Safiro> GaAs> SiC> GaN> InP.
Ibizaza
Kwishyira hamwe kwa Heterogeneous (urugero, GaN-kuri-Si, GaN-kuri-SiC) bizahuza imikorere nigiciro, iterambere ryimodoka muri 5G, ibinyabiziga byamashanyarazi, hamwe na comptabilite.
Igihe cyo kohereza: Kanama-21-2025






