Karubide ya Silicon (SiC) ntabwo ikiri semiconductor yihariye gusa. Imiterere yayo idasanzwe y'amashanyarazi n'ubushyuhe ituma iba ingenzi cyane mu bikoresho by'ikoranabuhanga bishya, inverters za EV, ibikoresho bya RF, ndetse n'ibikoresho bikoresha frequency nyinshi. Muri polytypes za SiC,4H-SiCna6H-SiCni byo biganza isoko—ariko guhitamo ikwiye bisaba ibirenze "ibyo bihendutse" gusa.
Iyi nkuru itanga igereranya ry’ibipimo byinshi4H-SiCna substrates za 6H-SiC, zikubiyemo imiterere ya kristu, amashanyarazi, ubushyuhe, imiterere ya mekanike, n'ikoreshwa risanzwe.
1. Imiterere ya Crystal n'Urutonde rw'Imiterere
SiC ni ibikoresho bya polymorphic, bivuze ko ishobora kubaho mu miterere myinshi ya kristu yitwa polytypes. Urukurikirane rw'ibice bya Si–C biriyaye ku murongo wa c rugaragaza izi polytypes:
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4H-SiC: Urukurikirane rw'ibice bine byo gutondeka → Ubusumbane buri hejuru ku murongo wa c.
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6H-SiC: Urukurikirane rw'ibice bitandatu byo gushyira hamwe → Ubusumbane buri hasi gato, imiterere y'umugozi itandukanye.
Iri tandukaniro rigira ingaruka ku kugenda kw'imodoka, icyuho, n'imyitwarire y'ubushyuhe.
| Ikiranga | 4H-SiC | 6H-SiC | Inyandiko |
|---|---|---|---|
| Guteranya ibice by'amabara | ABCB | ABCACB | Igena imiterere y'umugozi n'uburyo umutwaro ugenda |
| Uburinganire bwa kristu | Hexagonal (ifite ishusho imwe) | Hexagonal (ifite uburebure buto) | Igira ingaruka ku gucukura no gukura kwa epitaxial |
| Ingano zisanzwe za wafer | santimetero 2–8 | santimetero 2–8 | Kuboneka kuri buri kwiyongera mu masaha 4, igihe cyo kuba kigeze mu masaha 6 |
2. Imiterere y'amashanyarazi
Itandukaniro rikomeye cyane riri mu mikorere y'amashanyarazi. Ku ngufu n'ibikoresho bikoresha umurongo munini,kugenda kwa electron, icyuho cy'umugozi, no guhagarara kw'amashanyarazini ibintu by'ingenzi.
| Umutungo | 4H-SiC | 6H-SiC | Ingaruka ku gikoresho |
|---|---|---|---|
| Icyuho cy'umugozi | 3.26 eV | 3.02 eV | Icyuho kinini muri 4H-SiC gituma ingufu z'amashanyarazi zigabanuka cyane, bigatuma amazi agabanuka |
| Uburyo bwo kugenda bwa elegitoroniki | ~1000 cm²/V·s | ~450 cm²/V·s | Guhindura byihuse ibikoresho bifite voltage nyinshi muri 4H-SiC |
| Uburyo bwo kugenda mu mwobo | ~80 cm²/V·s | ~90 cm²/V·s | Ntabwo ari ngombwa cyane ku bikoresho byinshi bitanga ingufu |
| Ubushobozi bwo kwirinda | 10³–10⁶ Ω·cm (irinda ubushyuhe) | 10³–10⁶ Ω·cm (irinda ubushyuhe) | Ni ngombwa kugira ngo RF na epitaxial bikure neza |
| Dielectrical constant | ~10 | ~9.7 | Ifite ubushobozi bwo hejuru gato muri 4H-SiC, igira ingaruka ku bushobozi bw'igikoresho |
Ingingo z'ingenzi zo gufata:Ku byerekeye MOSFET zifite ingufu, diode za Schottky, no guhinduranya umuvuduko mwinshi, 4H-SiC ni yo ikundwa cyane. 6H-SiC irahagije ku bikoresho bifite ingufu nke cyangwa RF.
3. Imiterere y'ubushyuhe
Gukwirakwiza ubushyuhe ni ingenzi ku bikoresho bifite ingufu nyinshi. 4H-SiC muri rusange ikora neza bitewe n'uburyo ikoresha ubushyuhe.
| Umutungo | 4H-SiC | 6H-SiC | Ingaruka |
|---|---|---|---|
| Ubushobozi bwo gutwara ubushyuhe | ~3.7 W/cm·K | ~3.0 W/cm·K | 4H-SiC igabanya ubushyuhe vuba, ikagabanya ubushyuhe |
| Igipimo cy'ubwiyongere bw'ubushyuhe (CTE) | 4.2 ×10⁻⁶ /K | 4.1 ×10⁻⁶ /K | Guhuza n'ibice bya epitaxial ni ingenzi cyane kugira ngo hirindwe ko wafer ihindagurika |
| Ubushyuhe ntarengwa bwo gukora | 600–650 °C | 600 °C | Zombi zifite uburebure bwa 4H, zigira ubushobozi bwo gukora cyane igihe kirekire. |
4. Imiterere ya mekanike
Gukomera kw'imashini bigira ingaruka ku mikorere ya wafer, kugabanya ibice, no ku kwizerwa igihe kirekire.
| Umutungo | 4H-SiC | 6H-SiC | Inyandiko |
|---|---|---|---|
| Ubukomere (Mohs) | 9 | 9 | Byombi biragoye cyane, bya kabiri nyuma ya diyama |
| Gukomera kw'imvune | ~2.5–3 MPa·m½ | ~2.5 MPa·m½ | Bisa, ariko 4H irushaho kuba imwe gato |
| Ubugari bwa wafer | 300–800 µm | 300–800 µm | Uduce duto tw’isukari tugabanya ubushyuhe ariko twongera ibyago byo kutwambura |
5. Porogaramu zisanzwe
Gusobanukirwa aho buri bwoko bwa polytype burusha ubundi byose bifasha mu guhitamo substrate.
| Icyiciro cy'Ikoreshwa | 4H-SiC | 6H-SiC |
|---|---|---|
| MOSFET zifite ingufu nyinshi | ✔ | ✖ |
| Diode za Schottky | ✔ | ✖ |
| Inverters z'amashanyarazi | ✔ | ✖ |
| Ibikoresho bya RF / mikoroonde | ✖ | ✔ |
| LED na optoelectronics | ✖ | ✔ |
| Ibyuma by'ikoranabuhanga bifite ingufu nkeya bifite ingufu nyinshi | ✖ | ✔ |
Itegeko ry'Igikumwe:
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4H-SiC= Ingufu, umuvuduko, imikorere myiza
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6H-SiC= RF, ingufu nke, uruhererekane rw'ibikoresho by'ibanze
6. Kuboneka n'Ikiguzi
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4H-SiC: Byari bigoye cyane kubikuza, ubu biraboneka cyane. Bihenze gato ariko bifite ishingiro ku bikorwa bifite imikorere myiza.
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6H-SiC: Ikoreshwa ry’amashanyarazi rikuze, muri rusange igiciro kiri hasi, rikoreshwa cyane mu bikoresho by’ikoranabuhanga bya RF n’ibikoresho by’ikoranabuhanga bikoresha ingufu nke.
Guhitamo Substrate Ikwiye
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Ingufu z'amashanyarazi zikoresha ingufu nyinshi kandi zihuta cyane:4H-SiC ni ngombwa.
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Ibikoresho bya RF cyangwa LED:6H-SiC akenshi iba ihagije.
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Porogaramu zikoreshwa mu kwitabwaho n'ubushyuhe:4H-SiC itanga uburyo bwiza bwo gukwirakwiza ubushyuhe.
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Ibisabwa ku ngengo y'imari cyangwa ku bikoresho:6H-SiC ishobora kugabanya ikiguzi bitabangamiye ibisabwa n'igikoresho.
Ibitekerezo bya nyuma
Nubwo 4H-SiC na 6H-SiC zishobora kugaragara nk'iz'ijisho ritarahugurwa, itandukaniro ryazo rireba imiterere ya kristalo, kugenda kwa electron, imikorere y'ubushyuhe, n'uburyo ikoreshwa neza. Guhitamo polikopi ikwiye mu ntangiriro z'umushinga wawe bitanga umusaruro mwiza, kugabanuka kw'ivugurura, n'ibikoresho byizewe.
Igihe cyo kohereza: Mutarama-04-2026