Ibicuruzwa
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Ifite santimetero 12 za SIC substrate ya silikoni karubide prime grade diameter 300mm nini 4H-N Ikwiriye gukoreshwa mu gukwirakwiza ubushyuhe bwinshi mu gikoresho
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Ubunini bwa Dia300x1.0mmt Safiro Wafer C-Plane SSP/DSP
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Sapire ya sapire ifite santimetero 200 ifite ubugari buto 1SP 2SP 0.5mm 0.75mm
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HPSI SiC wafer dia: 3cm ubugari: 350um ± 25 µm kuri Power Electronics
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Wafer ya silikoni ya silikoni ya santimetero 8 ifite uburebure bwa 4H-N, ifite uburebure bwa 0.5mm, ifite uburebure bwa poroteyine ikozwe mu buryo bwihariye.
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Al2O3 imwe ya kristalo 99.999% Dia200mm ya safiro wafers ifite ubugari bwa 1.0mm na 0.75mm
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Wafer ya Safiro ifite santimetero 156 na santimetero 159 ya santimetero 6 ikoreshwa mu gutwara C-Plane DSP TTV
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Umurongo wa C/A/M wa sapphire wa sapphire wa santimetero 4 ukozwe muri kristale imwe Al2O3, SSP DSP ifite ubukana bwinshi bwa sapphire.
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3 santimetero ifite ubuziranenge buhanitse bwo gukingira （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-type SiC substrate SiC wafer Dia2inch nshya
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Uburyo bwo gutunganya ubuso bw'inkoni za laser za safiro zikozwe muri titaniyumu
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Wafers za Silikoni Carbide SiC 8inch 200mm 4H-N 4H-N grade production grade 500um thickness