Ibicuruzwa
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AlN kuri FSS 2inch 4inch NPSS/FSS AlN ikoreshwa mu gice cya semiconductor
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Gallium Nitride (GaN) Epitaxial yakuriye kuri Safiro Wafers 4cm 6cm kuri MEMS
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Gallium Nitride kuri Silicon wafer ifite uburebure bwa santimetero 4 na santimetero 6. Igenamiterere rya Si Substrate, Resistivity, na N-type/P-type Amahitamo
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Udupira twa GaN-on-SiC Epitaxial Wafers twakozwe ku giti cyazo (100mm, 150mm) – Amahitamo menshi ya SiC Substrate (4H-N, HPSI, 4H/6H-P)
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GaN-on-Diamond Wafers 4inch 6inch Ubunini bwa epi yose (micron) 0.6 ~ 2.5 cyangwa yahinduwe kugira ngo ikoreshwe mu buryo bwihuta
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Agasanduku k'imodoka ka FOSB gafite imyanya 25 yo gukoresha wafer ya santimetero 12. Intera ikwiye mu bikorwa byikora. Ibikoresho bisukuye cyane
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Agasanduku k'ubwikorezi k'imbere gafite santimetero 12 (300mm) Agasanduku k'ubwikorezi ka FOSB gafite ubushobozi bwo gutwara no kohereza Wafer. Ibikorwa byikora
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Indorerwamo za Silicone (Si) zikozwe neza cyane – Ingano n'amabara byihariye bya Optoelectronics na Infrared Imaging
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Lenses za Silicone (Si) zikozwe mu buryo bwa High-Purity Single Crystal – Ingano n'amabara byagenewe gukoreshwa muri infrared na THz (1.2-7µm, 8-12µm)
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Idirishya ry'urumuri rya Sapphire Stap-Type Optical, Al2O3 Single Crystal, High Purity, Diameter 45mm, Ubunini bwa 10mm, Laser Cut and Polished
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Idirishya rya Safiro rikora neza cyane, Al2O3 Single Crystal, rifite ibara rigaragara, rifite imiterere n'ingano byihariye kugira ngo rikoreshwe neza mu buryo bw'amatara.
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Pin yo kuzamura ya Safira ifite imikorere myiza, Al2O3 Single Crystal nziza yo kohereza Wafer – Ingano zihariye, Iramba cyane ku buryo bwo gukoresha neza