Uburyo bwo Gutunganya Safiro Ingot mu Gukuramo Ingot Czochralski CZ bwo Gukora Wafers za Safiro za santimetero 2-12

Uburyo bwo Guhinga Ingot ya Sapphire Czochralski CZ bwo Gukora Wafers za Sapphire zigera kuri santimetero 2-12 Ishusho yagaragaye

Ibisobanuro bigufi:

Ibikoresho byo Guhinga bya Sapphire Ingot (Uburyo bwa Czochralski)ni uburyo bugezweho bwagenewe gukura neza cyane kandi bufite inenge nkeya ya safiro imwe. Uburyo bwa Czochralski (CZ) butuma habaho kugenzura neza umuvuduko wo gukurura kristu y'imbuto (0.5–5 mm/h), umuvuduko wo kuzenguruka (5–30 rpm), n'ubushyuhe mu gice cy'urumuri cya iridium, bigatanga kristu zihwanye na santimetero 300 z'umurambararo. Ibi bikoresho bishyigikira kugenzura icyerekezo cya kristu ya C/Aplane, bigafasha gukura kwa safiro ifite ikoranabuhanga, ifite ikoranabuhanga, na safiro ifite imiterere inyuranye (urugero, rubi ya Cr³⁺, safiro y'inyenyeri ya Ti³⁺).

XKH itanga ibisubizo kuva ku iherezo kugeza ku iherezo, harimo guhindura ibikoresho (gukora wafer ya santimetero 2–12), kunoza imikorere (ubucucike bw'inenge <100/cm²), n'amahugurwa ya tekiniki, hamwe n'umusaruro wa wafers 5,000+ buri kwezi ukoreshwa nka substrates za LED, GaN epitaxy, na pakingi ya semiconductor.

Ohereza imeri kuri twe

Ibiranga

Ihame ry'imikorere

Uburyo bwa CZ bukora binyuze mu ntambwe zikurikira:
1. Gushonga ibikoresho fatizo: Al₂O₃ (ubuziranenge >99.999%) ishongeshwa mu cyuma cya iridium kuri 2050–2100°C.
2. Intangiriro y'Ikirimi cy'imbuto: Ikirimi cy'imbuto gishyirwa mu gishongeshonge, hanyuma kigakururwa vuba kugira ngo kibe ijosi (umurambararo wa <1 mm) kugira ngo hakurweho gucika kw'inyuma.
3. Imiterere y'urutugu n'Ubunini: Umuvuduko wo gukurura ugabanuka ukagera kuri mm 0.2–1 ku isaha, buhoro buhoro wongera umurambararo wa kristu ukagera ku bunini bw'intego (urugero, santimetero 4–12).
4. Gukonjesha no Gukonjesha: Kristali ikonjeshwa kuri 0.1–0.5°C/min kugira ngo igabanye guturika kw'ubushyuhe buterwa n'umuvuduko.
5. Ubwoko bwa kristu buhuye:
Icyiciro cya elegitoroniki: Ibikoresho bya semiconductor (TTV <5 μm)
Ingano y'urumuri: Amadirishya ya laser ya UV (ihererekanya ry'amashanyarazi >90% @ 200 nm)
Ubwoko bwa doped: Ruby (igipimo cya Cr³⁺ 0.01–0.5 wt.%), umuyoboro w'ubururu bwa safiro

Ibice by'ingenzi bya sisitemu

1. Sisitemu yo gushonga
Iridium Crucible: Irwanya ubushyuhe bwa 2300°C, irwanya ingese, ihuye n'ibintu binini bishonga (100–400 kg).
Ifuru yo Gushyushya: Igenzura ry'ubushyuhe ryigenga mu bice byinshi (± 0.5°C), imitere y'ubushyuhe yakozwe neza.

2. Sisitemu yo gukurura no kuzunguruka
Moteri ya Servo ifite ubuhanga buhanitse: Ubushobozi bwo gukurura 0.01 mm/h, ubugari bwo kuzenguruka <0.01 mm.
Ifu y'amazi ya Magnetic: Ihererekanya ry'amakuru ritagera ku ruhu kugira ngo rikomeze gukura (amasaha arenga 72).

3. Sisitemu yo kugenzura ubushyuhe
Igenzura rya PID Closed-Loop: Guhindura ingufu mu gihe nyacyo (50–200 kW) kugira ngo ikirere cy’ubushyuhe gihore neza.
Kurinda Gazi Idakora: Uruvange rwa Ar/N₂ (ubuziranenge bwa 99.999%) kugira ngo hirindwe ogisijeni.

4. Kwikora no Gukurikirana
Kugenzura umurambararo wa CCD: Ibisubizo mu gihe nyacyo (ukuri ± 0.01 mm).
Thermografiya ya Infrared: Ikurikirana imiterere y'urusobe rw'amazi.

Kugereranya uburyo bwa CZ na KY

Igipimo	Uburyo bwa CZ	Uburyo bwa KY
Ingano ya kristu ntarengwa	Santimetero 300 (300 mm)	400 mm (ingot ifite ishusho nk'iy'amapera)
Ubucucike bw'inenge	<100/cm²	<50/cm²
Igipimo cy'Izamuka	0.5–5 mm/isaha	0.1–2 mm/isaha
Ikoreshwa ry'ingufu	50–80 kWh/kg	80–120 kWh/kg
Porogaramu	Ibikoresho bya LED, GaN epitaxy	Amadirishya y'urumuri, amadirishya manini
Ikiguzi	Ishoramari riciriritse (rikoresha ibikoresho byinshi)	Uburyo buhanitse (bugoye)

Porogaramu z'ingenzi

1. Inganda zikora ibikoresho bya semiconductor
GaN Epitaxial Substrates: Wafers za santimetero 2–8 (TTV <10 μm) kuri Micro-LED na diode za laser.
SOI Wafers: Ubukana bw'ubuso <0.2 nm kuri chips za 3D-integrated.

2. Ikoranabuhanga rya Optoelectronics
Amadirishya ya Laser ya UV: Ihanganira ubucucike bw'ingufu za 200 W/cm² kuri lithography optics.
Ibice bya infrared: Igipimo cyo kwinjiza <10⁻³ cm⁻¹ cyo gufata amashusho y'ubushyuhe.

3. Ibyuma by'ikoranabuhanga bikoreshwa n'abaguzi
Ibipfukisho bya Kamera kuri Smartphone: Ubukana bwa Mohs bwa 9, 10 × bwongera ubushobozi bwo guhangana n'imikurire.
Ecran z'isaha zigezweho: Ubunini bwa mm 0.3–0.5, ubushobozi bwo kohereza ubutumwa >92%.

4. Ubwunganizi n'Ibyerekeye Ikiresi
Amadirishya ya Reactor ya Nuclear: Ishobora kwihanganira imirasire kugeza kuri 10¹⁶ n/cm².
Indorerwamo za Lazeri zifite imbaraga nyinshi: Guhindura ubushyuhe <λ/20@1064 nm.

Serivisi za XKH

1. Guhindura ibikoresho
Igishushanyo cy'icyumba gishobora gupimwa: Imiterere ya Φ200–400 mm yo gukora wafer ya santimetero 2–12.
Guhindura imiterere y'ikoreshwa ry'imashini zikoresha imiti: Ishyigikira ikoreshwa ry'imashini zikoresha imiti isanzwe (Er/Yb) na transition-metal (Ti/Cr) kugira ngo ikoreshwe mu buryo bwa optoelectronic.

2. Inkunga kuva ku mpera kugeza ku mpera
Uburyo bwo kunoza imikorere: Uburyo bwo guteka bwabanje kwemezwa (50+) ku bikoresho bya LED, RF, n'ibice byakonjeshejwe n'imirasire.
Urusobe rw'Imirimo Mpuzamahanga: Gusuzuma impanuka amasaha 24/7 no kubungabunga impanuka aho ikorera hamwe na garanti y'amezi 24.

3. Gutunganya mu buryo bunyura mu nzira
Gukora Wafer: Gukata, gusya no gusiga irangi ry'udupira twa santimetero 2–12 (C/A-plane).
Ibicuruzwa byongerewe agaciro:
Ibice by'urumuri: Amadirishya ya UV/IR (ubugari bwa mm 0.5–50).
Ibikoresho byo mu rwego rw'imitako: Cr³⁺ rubi (yemejwe na GIA), safiro y'inyenyeri ya Ti³⁺.

4. Ubuyobozi bwa Tekiniki
Impamyabushobozi: Wafers zikurikiza EMI.
Patenti: Patenti z'ingenzi mu guhanga udushya mu buryo bwa CZ.

Umwanzuro

Ibikoresho bya CZ method bitanga ubushobozi bwo guhuza ibintu mu buryo bunini, ubusembwa buri hasi cyane, kandi bigatuma ibintu bidahinduka, bigatuma biba urugero rwiza mu nganda zikoresha LED, semiconductor, na defense. XKH itanga ubufasha bwuzuye kuva mu gushyira ibikoresho kugeza mu gutunganya nyuma yo gukura, bigatuma abakiriya bagera ku musaruro uhendutse kandi ukora neza wa safiro.