Indabyo za Silicon Carbide (SiC) zirinda ubushyuhe bwinshi ku birahuri bya Ar

Ishusho ya Silicon Carbide (SiC) Ifite Ingufu Nto Ihagije ku Gikoresho cy'Indorerwamo za Ar

Ibisobanuro bigufi:

Substrates za silicon carbide (SiC) zifite ubuziranenge buhanitse ni ibikoresho byihariye bikozwe muri silicon carbide, bikoreshwa cyane mu gukora ibikoresho by'ikoranabuhanga bikoresha ingufu, ibikoresho bya radio frequency (RF), n'ibice bya semiconductor bifite ubushyuhe bwinshi. Silicon carbide, nk'ibikoresho bya semiconductor bifite umupaka munini, itanga imiterere myiza y'amashanyarazi, ubushyuhe, n'ubukonje, bigatuma ikoreshwa cyane mu bidukikije bifite voltage nyinshi, frequency nyinshi, n'ubushyuhe bwinshi.

Ohereza imeri kuri twe

Ibiranga

Ishusho irambuye

Incamake y'ibicuruzwa bya Semi-Insulation SiC Wafers

Wafers zacu za High-Purity Semi-Insulating SiC Wafers zagenewe ikoranabuhanga rigezweho, ibice bya RF/microwave, hamwe n'ibikoresho bya optoelectronic. Izi wafers zikorwa mu ma crystals meza ya 4H- cyangwa 6H-SiC, hakoreshejwe uburyo bwo gukura bwa Physical Vapor Transport (PVT), hanyuma hagakurikiraho gufunga mu buryo bwimbitse. Umusaruro ni wafer ifite imiterere ikurikira:

Ubushobozi bwo guhangana n'ingaruka mbi cyane: ≥1×10¹² Ω·cm, bigabanya neza amazi asohoka mu bikoresho bihinduranya ingufu nyinshi.
Icyuho kinini (~3.2 eV): Itanga umusaruro mwiza cyane mu bidukikije birimo ubushyuhe bwinshi, ahantu hashyushye cyane, kandi hakoresha imirasire myinshi.
Ubushobozi budasanzwe bwo gutwara ubushyuhe: >4.9 W/cm·K, itanga uburyo bwo gukwirakwiza ubushyuhe neza mu bikorwa bifite ingufu nyinshi.
Imbaraga z'ubukanishi zihebuje: Ifite ubukana bwa Mohs bwa 9.0 (bwa kabiri nyuma ya diyama), ubushyuhe buke, kandi ikaba ifite ubushobozi bwo kudahungabana cyane mu mikorere ya shimi.
Ubuso bworoshye mu buryo bwa atome: Ra < 0.4 nm n'ubucucike bw'ibisebe < 1/cm², ni byiza cyane mu gukora MOCVD/HVPE epitaxy na micro-nano.

Ingano zibonekaIngano zisanzwe zirimo 50, 75, 100, 150, na 200 mm (2"–8"), hamwe n'umurambararo wihariye uboneka kugeza kuri 250 mm.
Ingano y'ubunini: 200–1.000 μm, hamwe n'ubushobozi bwo kwihanganira ± 5 μm.

Uburyo bwo gukora imashini zirinda ubushyuhe za SiC

Gutegura ifu ya SiC isuku cyane

Ibikoresho byo Gutangiriraho: Ifu ya SiC yo mu rwego rwa 6N, isukurwa hakoreshejwe uburyo bwinshi bwo gusukura umwuka no gukoresha ubushyuhe, bituma icyuma gihumanya ikirere gike (Fe, Cr, Ni < 10 ppb) kandi hagashyirwamo ibyuma bike bya polycrystalline.

Iterambere rya PVT rimwe ryahinduwe

Ibidukikije: Hafi y'ubusamo (10⁻³–10⁻² Torr).
Ubushyuhe: Igikoresho cya grafiti gishyushye kugeza kuri ~2,500 °C gifite ubushyuhe bugenzurwa bwa ΔT ≈ 10–20 °C/cm.
Igishushanyo mbonera cy'ingufu zitembera n'ibicanwa: Ibikoresho bitandukanya umwuka n'imyenge byihariye bifasha mu gukwirakwiza umwuka mu buryo bumwe kandi bigahagarika imiterere y'ingufu idakenewe.
Ifunguro Rihinduka n'Izunguruka: Kongera kuvugurura ifu ya SiC n'uruhererekane rw'udutsi twa kristu (crystal-rod) buri gihe bituma ubucucike buke bw'udutsi (<3,000 cm⁻²) bukomeza kandi bugakomeza kwerekeza kuri 4H/6H.

Gushyira indishyi mu buryo bwimbitse

Hydrogen Anneal: Bikorerwa mu kirere cya H₂ ku bushyuhe buri hagati ya 600–1.400 °C kugira ngo imitego yo mu rwego rwo hejuru ikoreshwe kandi ikomeze gutwara ibintu mu buryo busanzwe.
Nta gukoresha imiti igabanya ubukana bw'ibiyobyabwenge (Ntabwo ari ngombwa): Gushyiramo Al (acceptor) na N (donor) mu gihe cy'ikura cyangwa nyuma yo gukura kwa CVD kugira ngo habeho ubudahangarwa buhamye hagati y'utanga n'uwemera, bigatuma habaho uburebure bw'ingufu zo kurwanya.

Gukata neza no gusimbuza ibice byinshi

Gukata insinga za diyama: Amacupa yaciwe ku bugari bwa μm 200–1.000, nta kwangirika gukabije kandi nta kwihanganira kwangirika kwa μm ± 5.
Uburyo bwo gufunga: Ibyuma bito cyane bya diyama bikuraho ibyangiritse ku rukero, bigategura irangi ryo gusiga.

Gusukura hakoreshejwe ikoranabuhanga rya "chemical mechanical polishing" (CMP)

Itangazamakuru ryo Gusukura: Urusenda rwa Nano-oxide (SiO₂ cyangwa CeO₂) mu gisubizo cyoroheje cya alkaline.
Igenzura ry'Imikorere: Gusukura hakoreshejwe stress nke bigabanya ubukana, bigatuma ubukana bwa RMS bugera kuri 0.2–0.4 nm kandi bigakuraho imishwarara mito.

Isuku ya nyuma no gupakira

Gusukura hakoreshejwe ikoranabuhanga rya Ultrasonic: Uburyo bwo gusukura bukorwa mu ntambwe nyinshi (ibinyabutabire bikomoka ku bimera, aside/ishingiro, no koza amazi asukuye) mu cyumba cy’isuku cya Class-100.
Gufunga no gupfunyika: Kumisha ifu hakoreshejwe uburyo bwo gusukura azote, bifunze mu mifuka irimo azote kandi bipakiye mu dusanduku two hanze turwanya imihindagurikire y’ikirere, kandi dutuma amazi adahindagurika.

Ibisobanuro bya Semi-Insulation SiC Wafers

Imikorere y'ibicuruzwa	Icyiciro cya P	Icyiciro cya D
I. Ibipimo bya Kristali	I. Ibipimo bya Kristali	I. Ibipimo bya Kristali
Polytype ya Crystal	4H	4H
Igipimo cy'ikirahure a	>2.6 @589nm	>2.6 @589nm
Igipimo cyo kwinjiza ibinyabutabire a	≤0.5% @450-650nm	≤1.5% @450-650nm
Ihererekanyamakuru rya MP (Ridapfutse)	≥66.5%	≥66.2%
Igihu	≤0.3%	≤1.5%
Gushyiramo ubwoko bwa polytype a	Ntibyemewe	Agace k'ikusanyirizo ≤20%
Ubucucike bw'imiyoboro mito	≤0.5 /cm²	≤2 / cm²
Hexagonal Ubusa a	Ntibyemewe	Ntabyo
Gushyiramo ibice bifitanye isano	Ntibyemewe	Ntabyo
Gushyiramo MP	Ntibyemewe	Ntabyo
II. Ibipimo bya mekanike	II. Ibipimo bya mekanike	II. Ibipimo bya mekanike
Ingano	150.0 mm +0.0 mm / -0.2 mm	150.0 mm +0.0 mm / -0.2 mm
Icyerekezo cy'ubuso	{0001} ± 0.3°	{0001} ± 0.3°
Uburebure bw'ibanze bw'ikiraro	Notch	Notch
Uburebure bwa kabiri bw'ikiraro	Nta nzu y'inyongera	Nta nzu y'inyongera
Icyerekezo cy'ibanga	<1-100> ±2°	<1-100> ±2°
Inguni y'Inota	90° +5° / -1°	90° +5° / -1°
Ubujyakuzimu bw'Inoti	mm 1 uvuye ku nkombe +0.25 mm / -0.0 mm	mm 1 uvuye ku nkombe +0.25 mm / -0.0 mm
Ubuvuzi bw'ubuso	C-isura, Si-isura: Kuvugurura hakoreshejwe imiti ya Chimio-Mechanical (CMP)	C-isura, Si-isura: Kuvugurura hakoreshejwe imiti ya Chimio-Mechanical (CMP)
Umupaka wa Wafer	Ifite Chamfered (Ifite impande)	Ifite Chamfered (Ifite impande)
Ubukana bw'ubuso (AFM) (5μm x 5μm)	Si-isura, C-isura: Ra ≤ 0.2 nm	Si-isura, C-isura: Ra ≤ 0.2 nm
Ubunini bwa (Tropel)	500.0 μm ± 25.0 μm	500.0 μm ± 25.0 μm
LTV (Tropel) (40mm x 40mm) a	≤ 2 μm	≤ 4 μm
Ihindagurika ry'Ubunini Rusange (TTV) a (Tropel)	≤ 3 μm	≤ 5 μm
Umuheto (Agaciro keza) a (Tropel)	≤ 5 μm	≤ 15 μm
Warp a (Tropel)	≤ 15 μm	≤ 30 μm
III. Ibipimo by'ubuso	III. Ibipimo by'ubuso	III. Ibipimo by'ubuso
Chip/Notch	Ntibyemewe	≤ uduce 2, buri gice gifite uburebure n'ubugari ≤ 1.0 mm
Gukata (Si-face, CS8520)	Uburebure bwose ≤ 1 x Diameter	Uburebure bwose ≤ 3 x Diameter
Agace gato ka (Si-face, CS8520)	≤ ibice 500	Ntabyo
Uduce	Ntibyemewe	Ntibyemewe
Kwanduza	Ntibyemewe	Ntibyemewe

Imikoreshereze y'ingenzi ya Semi-Insulation SiC Wafers

Ikoranabuhanga rikoresha imbaraga nyinshi: MOSFET zishingiye kuri SiC, diode za Schottky, na module z'amashanyarazi ku binyabiziga bikoresha amashanyarazi (EVs) bigira uruhare mu bushobozi buke bwa SiC bwo kudakoresha ingufu nyinshi no gukoresha ingufu nyinshi.
RF na Microwave: Ubushobozi bwa SiC bwo gukoresha frequency yo hejuru no kwirinda imirasire ni byiza cyane kuri amplifier za 5G base-station, module za radar, n'itumanaho rya satelite.
Ikoranabuhanga rya Optoelectronics: Utunyabutabire twa UV, diode z'ubururu bwa laser, na fotodecteur zikoresha substrates za SiC zoroshye cyane kugira ngo zikure neza mu buryo bumwe.
Gusuzuma ibidukikije bikabije: Kuba SiC ihagaze neza mu bushyuhe bwinshi (>600 °C) bituma iba nziza cyane ku bikoresho bipima ikirere biri mu bidukikije bikomeye, harimo turbine za gaze n'ibikoresho bipima ikirere.
Ibyerekeye Ikiresiteri n'Ubwunganizi mu by'Indege: SiC itanga imbaraga zirambye ku bikoresho by'ikoranabuhanga bikoresha ingufu muri satelite, sisitemu za misile, n'ibikoresho by'ikoranabuhanga byo mu kirere.
Ubushakashatsi Buhanitse: Ibisubizo byihariye bya quantum computing, micro-optics, n'izindi porogaramu zihariye z'ubushakashatsi.

Ibibazo Bikunze Kubazwa

Kuki semi-insulation SiC hejuru ya SiC itwara amashanyarazi?
SiC irinda umuriro mu buryo buciriritse itanga ubushobozi bwo kugabanya amazi mu bikoresho bifite voltage nyinshi n'amajwi menshi. SiC iyobora umuriro ikwiriye cyane gukoreshwa aho bikenewe ko habaho amashanyarazi.
Ese izi wafer zishobora gukoreshwa mu gukura kw'inyuma y'inyuma?
Yego, izi wafers ziteguye gukoreshwa kandi zinogeye MOCVD, HVPE, cyangwa MBE, hamwe n’uburyo bwo kuvura ubuso no kugenzura inenge kugira ngo habeho ubwiza bw’urwego rwa epitaxial.
Ni gute wakwita ku isuku y'ibice bya wafer?
Uburyo bwo gusukura mu cyumba cyo mu rwego rwa Class-100, gusukura hakoreshejwe ultrasound mu buryo bw'intambwe nyinshi, no gupfunyikamo azote bifunga neza ko wafers nta byanduza, ibisigazwa, cyangwa udukoko duto.
Igihe cyo gutanga amabwiriza ni ikihe?
Ingero zisanzwe zoherezwa mu minsi 7-10 y'akazi, mu gihe ibyo gutumiza bitangwa mu byumweru 4-6, bitewe n'ingano ya wafer yihariye n'imiterere yihariye.
Ushobora gutanga imiterere yihariye?
Yego, dushobora gukora substrates zihariye mu buryo butandukanye nko mu madirishya y’ibara ry’umukara, imiyoboro ya V, lenses z’umukara, n’ibindi.

Ku bijyanye natwe

XKH yihariye mu iterambere, gukora, no kugurisha ikirahure cyihariye cya optique n'ibikoresho bishya bya kristu. Ibicuruzwa byacu bitanga ibikoresho by'ikoranabuhanga bya optique, ibikoresho by'ikoranabuhanga bikoreshwa n'abantu, n'ibya gisirikare. Dutanga ibikoresho bya optique bya Safira, ibifuniko bya lens za telefoni zigendanwa, Ceramics, LT, Silicon Carbide SIC, Quartz, na semiconductor crystal wafers. Dufite ubuhanga n'ibikoresho bigezweho, turakora neza mu gutunganya ibicuruzwa bitari iby'ubuziranenge, tugamije kuba ikigo gikomeye mu ikoranabuhanga rigezweho mu bikoresho bya optoelectronic.