SiC
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Ifite santimetero 12 za SIC substrate ya silikoni karubide prime grade diameter 300mm nini 4H-N Ikwiriye gukoreshwa mu gukwirakwiza ubushyuhe bwinshi mu gikoresho
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Wafer ya silikoni ya silikoni ya santimetero 8 ifite uburebure bwa 4H-N, ifite uburebure bwa 0.5mm, ifite uburebure bwa poroteyine ikozwe mu buryo bwihariye.
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HPSI SiC wafer dia: 3cm ubugari: 350um ± 25 µm kuri Power Electronics
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3 santimetero ifite ubuziranenge buhanitse bwo gukingira （HPSI）SiC wafer 350um Dummy grade Prime grade
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P-type SiC substrate SiC wafer Dia2inch nshya
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Wafers za Silikoni Carbide SiC 8inch 200mm 4H-N 4H-N grade production grade 500um thickness
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Ingano ya Silicon Carbide ya 2Inch 6H-N Sic Wafer ifite Double Polished Conductive Prime Grade Mos Grade
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Wafer ya santimetero 12 ya 4H-SiC ikoreshwa mu birahuri bya AR
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HPSI SiC Wafer ≥90% Ingano y'Ikoranabuhanga ryo Gutuma Indorerwamo za AI/AR zitangwa
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Indabyo za Silicon Carbide (SiC) zirinda ubushyuhe bwinshi ku birahuri bya Ar
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Uduce twa Epitaxial twa 4H-SiC twa MOSFETs zifite Voltage nyinshi (100–500 μm, santimetero 6)
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SICOI (Silicon Carbide kuri Insulator) Wafers SiC Film KURI Silicon