Ifuru yo Gukuramo ya SiC Ingot ku buryo bunini bwa SiC Crystal TSSG/LPE

Ibisobanuro bigufi:

Ifuru ya XKH yo gukuraho ifuru ya silicon carbide ingot ikoresha ikoranabuhanga rikomeye ku isi rya TSSG (Top-Seeded Solution Growth) na LPE (Liquid Phase Epitaxy), ryagenewe cyane cyane gukuraho ifuru imwe ya SiC ifite ubuziranenge. Uburyo bwa TSSG butuma habaho gukura kw'ifuru nini ya santimetero 4-8 z'umurambararo wa santimetero 4-8 binyuze mu kugenzura ubushyuhe neza no kugenzura umuvuduko w'imbuto, mu gihe uburyo bwa LPE bworohereza gukura kw'ifuru ya SiC epitaxial ku bushyuhe buri hasi, cyane cyane ku ifuru nini cyane ya epitaxial. Ubu buryo bwo gukura kw'ifuru ya silicon carbide ingot bukoreshwa neza mu nganda mu gukora kristu zitandukanye za SiC harimo ubwoko bwa 4H/6H-N n'ubwoko bwa 4H/6H-SEMI insulation, butanga ibisubizo byuzuye kuva ku bikoresho kugeza ku bikorwa.

Ohereza imeri kuri twe

Ibiranga

Ihame ry'imikorere

Ihame ry'ingenzi ry'ikura ry'ingot ya silikoni ikoze mu gice cy'amazi rikubiyemo gushonga ibikoresho fatizo bya SiC bifite isuku nyinshi mu byuma bishongeshejwe (urugero, Si, Cr) kuri 1800-2100°C kugira ngo habeho ibisubizo byuzuye, hagakurikiraho gukura kwa kristu imwe ya SiC ku kristu z'imbuto hakoreshejwe uburyo buhamye bwo kugenzura ubushyuhe n'ubushyuhe bwinshi. Iri koranabuhanga rikwiriye cyane cyane mu gukora kristu imwe ifite isuku nyinshi (>99.9995%) ifite ubucucike buke (<100/cm²), ihura n'ibisabwa bikomeye ku bikoresho by'amashanyarazi n'ibikoresho bya RF. Sisitemu yo gukura y'igice cy'amazi ituma habaho kugenzura neza ubwoko bw'ingufu za kristu (ubwoko bwa N/P) no kurwanya ubushyuhe binyuze mu buryo bwiza bwo gukora no gukura kw'ibisubizo.

Ibice by'ingenzi

1. Sisitemu yihariye yo gucukura: Graphite/tantalum composite crucible ifite ubuziranenge bwinshi, irwanya ubushyuhe >2200°C, irwanya ingese ya SiC ishonga.

2. Sisitemu yo Gushyushya mu bice byinshi: Gushyushya bihujwe hamwe n’ubushyuhe bungana na ± 0.5°C (urugero rwa 1800-2100°C).

3. Uburyo bwo Kwerekeza neza: Uburyo bwo kugenzura imiyoboro ibiri ifunze kugira ngo imbuto zizunguruke (0-50rpm) kandi ziterurwe (0.1-10mm/h).

4. Sisitemu yo kugenzura ikirere: Uburinzi bwa argon/azote bufite isuku nyinshi, umuvuduko w'akazi ushobora guhinduka (0.1-1atm).

5. Sisitemu yo kugenzura y'ubwenge: PLC + igenzura ridasanzwe rya mudasobwa y'inganda hamwe n'uburyo bwo kugenzura iterambere ry'ikoranabuhanga mu gihe nyacyo.

6. Sisitemu yo gukonjesha neza: Igishushanyo mbonera cy’ubukonjesha bw’amazi gitanga umusaruro urambye.

Kugereranya TSSG na LPE

Ibiranga	Uburyo bwa TSSG	Uburyo bwa LPE
Ubushyuhe bwo gukura	2000-2100°C	1500-1800°C
Igipimo cy'Izamuka	0.2-1mm/isaha	5-50μm/isaha
Ingano ya kristu	Ingots za santimetero 4-8	Uduce twa epi-layers twa 50-500μm
Porogaramu nyamukuru	Gutegura substrate	Ibice by'amashanyarazi bya epi-layers
Ubucucike bw'inenge	<500/cm²	<100/cm²
Polytypes zikwiriye	4H/6H-SiC	4H/3C-SiC

Porogaramu z'ingenzi

1. Ingufu z'ikoranabuhanga: substrates za santimetero 6 za 4H-SiC kuri 1200V+ MOSFET/diode.

2. Ibikoresho bya 5G RF: Ibikoresho bya SiC bikingira buhoro buhoro kuri PAs z'ibanze.

3. Porogaramu za EV: Uduce twa epi-layers twinshi cyane (>200μm) ku bikoresho by'imodoka.

4. Inverters za PV: Substrates zifite inenge nke zituma habaho ubushobozi bwo guhindura ibintu uko bikwiye (converter) ku gipimo cya 99%.

Ibyiza by'ingenzi

1. Ubuhanga buhanitse
1.1 Igishushanyo mbonera cy'uburyo bwinshi buhuriweho
Iyi sisitemu yo gukuraho ingot ya SiC ikoresha uburyo bushya bwo gukuraho ikoranabuhanga rya TSSG na LPE crystal. Sisitemu ya TSSG ikoresha uburyo bwo gukuraho solution ikoresheje imbuto nyinshi hamwe no kugenzura neza ubushyuhe (ΔT≤5℃/cm), bigatuma habaho gukura guhamye kwa ingot za SiC nini za santimetero 4-8 hamwe n'umusaruro umwe wa 15-20kg kuri 6H/4H-SiC crystals. Sisitemu ya LPE ikoresha solvent composition nziza (Si-Cr alloy system) hamwe no kugenzura supersaturation (±1%) kugira ngo ikure epitaxial layers nziza cyane zifite ubucucike bungana na <100/cm² ku bushyuhe buke (1500-1800℃).

1.2 Sisitemu yo kugenzura y'ubwenge
Ifite uburyo bwo kugenzura iterambere ry’ikoranabuhanga mu gisekuru cya kane, irimo:
• Gukurikirana ahantu hatandukanye hakoreshejwe spectra nyinshi (uruhererekane rw'uburebure bwa 400-2500nm)
• Gupima urwego rw'ingufu hakoreshejwe laser (ubuhanga bwa ± 0.01mm)
• Igenzura ry’umurambararo ufunze rishingiye kuri CCD (<±1mm ihindagurika)
• Guteza imbere imiterere y'ingufu hakoreshejwe ubuhanga bwa AI (15% by'ingufu zikoreshwa)

2. Ibyiza by'Imikorere y'Ibikorwa
2.1 Uburyo bwa TSSG Imbaraga z'ingenzi
• Ubushobozi bunini: Bufasha gukura kwa kristale ya santimetero 25 hamwe n'ubugari bwa metero 1.80.
• Ubucucike bw'amakristali buhebuje: Ubucucike bw'amasasu <500/cm², ubucucike bw'imiyoboro mito <5/cm²
• Uburyo bwo gukoresha imiti igabanya ubukana: <8% by'uburyo bwo kurwanya indwara ya n (wafers za santimetero 4)
• Igipimo cyo gukura cyiza: Ishobora guhindurwa hagati ya 0.3-1.2mm / isaha, 3-5× vuba kurusha uburyo bwo gushyuha

2.2 Uburyo bwa LPE Ingufu z'ingenzi
• Epitaxy ifite inenge nke cyane: Ubucucike bw'aho ihurira <1×10¹¹cm⁻²·eV⁻¹
• Kugenzura neza ubunini: 50-500μm epi-layers hamwe n'ubunini bunyuranye bwa <±2%
• Ubushyuhe buke: 300-500℃ iri hasi ugereranyije n'imikorere ya CVD
• Imiterere igoye: Ishyigikira aho pn ihurira, superlattice, nibindi.

3. Ibyiza byo gukoresha neza umusaruro
3.1 Kugenzura Ibiciro
• 85% by'ikoreshwa ry'ibikoresho fatizo (ugereranyije na 60% bisanzwe)
• Ingufu zikoreshwa ku gipimo cya 40% (ugereranije na HVPE)
• 90% by'igihe cyo gukora ibikoresho (igishushanyo mbonera cy'ibikoresho bigabanya igihe cyo gukora ibikoresho)

3.2 Igenzura ry'ubuziranenge
• Igenzura ry'imikorere rya 6σ (CPK>1.67)
• Gutahura inenge kuri interineti (ubuziranenge bwa 0.1μm)
• Gukurikirana amakuru mu buryo bwuzuye (ibipimo 2000+ by'igihe nyacyo)

3.3 Uburyo bwo kwaguka
• Ihuye na polytypes za 4H/6H/3C
• Ishobora kuvugururwa ikagera kuri module za 12-inch process
• Ishyigikira SiC/GaN hetero-integration

4. Ibyiza byo gukoresha mu nganda
4.1 Ibikoresho by'amashanyarazi
• Ibikoresho bifite ubushobozi buke bwo kwirinda (0.015-0.025Ω·cm) ku bikoresho bya 1200-3300V
• Ibyuma bikingira buhoro buhoro (>10⁸Ω·cm) byo gukoresha RF

4.2 Ikoranabuhanga Rikiri Gushya
• Itumanaho rya Quantum: Imbuga z'urusaku ruri hasi cyane (urusaku rwa 1/f<-120dB)
• Ibidukikije bikabije: Amakristu adashobora kuraswa n'imirasire (<5% yangiritse nyuma yo kuraswa n'imirasire ya 1 × 10¹⁶n / cm²)

Serivisi za XKH

1. Ibikoresho byihariye: Imiterere ya sisitemu ya TSSG/LPE ijyanye nayo.
2. Amahugurwa ku buryo bugezweho: Gahunda z’amahugurwa yuzuye ya tekiniki.
3. Inkunga nyuma yo kugurisha: Gusubiza no kubungabunga ibikoresho amasaha 24/7.
4. Ibisubizo bya Turnkey: Serivisi yuzuye kuva ku gushyiraho kugeza ku kwemeza uburyo bwo kuyikoresha.
5. Ibikoresho bitangwa: Uduce twa SiC twa santimetero 2-12/epi-wafers turahari.

Ibyiza by'ingenzi birimo:
• Ubushobozi bwo gukura bwa kristale ya santimetero 2.8.
• Uburinganire bungana <0.5%.
• Igihe cyo gukora ibikoresho >95%.
• Ubufasha bwa tekiniki amasaha 24/7.