Igikoresho cyo gukuraho kristale cya SiC Ingot gikura 4inch 6inch 8inch PTV Lely TSSG LPE uburyo bwo gukuraho

Igitanura cyo gukuraho kristu cya SiC Ingot gikura 4inch 6inch 8inch PTV Lely TSSG LPE uburyo bwo gukuraho Ishusho yagaragaye

Ibisobanuro bigufi:

Gukura kwa kristu ya silicon carbide (SiC) ni intambwe y'ingenzi mu gutegura ibikoresho bya semiconductor bifite imikorere myiza. Bitewe n'aho SiC ishongera cyane (hafi 2700°C) n'imiterere ya polytypic ikomeye (urugero: 4H-SiC, 6H-SiC), ikoranabuhanga ryo gukura kwa kristu rifite ingorane nyinshi. Muri iki gihe, uburyo bw'ingenzi bwo gukura burimo uburyo bwo kohereza umwuka uhumeka (PTV), uburyo bwa Lely, uburyo bwo gukuraho imbuto nyinshi (TSSG) n'uburyo bwa epitaxy bukoreshwa mu gice cy'amazi (LPE). Buri buryo bufite ibyiza n'ibibi byabwo kandi bukwiranye n'ibisabwa bitandukanye.

Ohereza imeri kuri twe

Ibiranga

Uburyo bw'ingenzi bwo gukuramo kristu n'imiterere yabwo

(1) Uburyo bwo kohereza umwuka ushyushye (PTV)
Ihame: Iyo ubushyuhe bwinshi bukabije, ibikoresho fatizo bya SiC bihinduka gaze, hanyuma bigashyirwa ku gikoresho cy’imbuto.
Ibiranga by'ingenzi:
Ubushyuhe bwinshi bwo gukura (2000-2500°C).
Ubwiza bwo hejuru, bunini bwa 4H-SiC na 6H-SiC kristus burashobora guhingwa.
Igipimo cyo gukura kiragenda buhoro, ariko ubwiza bwa kristu buri hejuru.
Ikoreshwa: Ikoreshwa cyane cyane mu bikoresho bya semiconductor bikoresha ingufu, ibikoresho bya RF n'ibindi bikoresho byo mu rwego rwo hejuru.

(2) Uburyo bwa Lely
Ihame: Amabuye y'agaciro ahingwa hakoreshejwe uburyo bwo kuyashyira mu mwanya wabyo no kuyahinduramo ifu ya SiC ku bushyuhe bwinshi.
Ibiranga by'ingenzi:
Uburyo bwo gukura ntibusaba imbuto, kandi ingano ya kristu ni nto.
Ubwiza bwa kristu buri hejuru, ariko ubushobozi bwo gukura ni buke.
Bikwiriye gukorwa mu bushakashatsi bwo muri laboratwari no mu gukora uduce duto.
Ikoreshwa: Ikoreshwa cyane cyane mu bushakashatsi bwa siyansi no gutegura kristu nto za SiC.

(3) Uburyo bwo gukuraho umuti w'imbuto (TSSG)
Ihame: Mu gisubizo cy'ubushyuhe bwinshi, ibikoresho fatizo bya SiC birashonga bikamera nk'ikirahuri ku kirahuri cy'imbuto.
Ibiranga by'ingenzi:
Ubushyuhe bwo gukura ni buke (1500-1800°C).
Uduce duto twa SiC tw’ubwiza bwo hejuru kandi dufite inenge nkeya dushobora guhingwa.
Igipimo cyo gukura kiragenda buhoro, ariko imiterere ya kristu ni myiza.
Ikoreshwa: Ikwiriye gutegura kristu nziza za SiC, nk'ibikoresho bya optoelectronic.

(4) Epitaxy y'igice cy'amazi (LPE)
Ihame: Mu gisubizo cy'icyuma gikozwe mu mazi, gukura kw'ibikoresho fatizo bya SiC epitaxial ku butaka.
Ibiranga by'ingenzi:
Ubushyuhe bwo gukura ni buke (1000-1500°C).
Igipimo cyo gukura vuba, kibereye filime.
Ubwiza bwa kristu buri hejuru, ariko ubunini bwayo ni buke.
Ikoreshwa: Ikoreshwa cyane cyane mu gukura kwa epitaxial kwa firime za SiC, nk'ibipimo by'amashanyarazi n'ibikoresho by'ikoranabuhanga.

Uburyo bw'ingenzi bwo gukoresha itanura rya silicon carbide crystal

Igikoresho cya kristu cya SiC ni cyo gikoresho cy'ingenzi mu gutegura kristu za sic, kandi uburyo bw'ingenzi bwo kuzikoresha burimo:
Gukora ibikoresho bya semiconductor by'amashanyarazi: Bikoreshwa mu guteza imbere kristu nziza za 4H-SiC na 6H-SiC nk'ibikoresho bya substrate by'ibikoresho by'amashanyarazi (nk'ama-MOSFET, diode).
Porogaramu: imodoka zikoresha amashanyarazi, inverters za photovoltaic, amashanyarazi yo mu nganda, nibindi.

Gukora ibikoresho bya Rf: Bikoreshwa mu gukura kristu za SiC zifite inenge nke nk'ibikoresho bya RF kugira ngo bihuze n'ibikenewe cyane mu itumanaho rya 5G, radar na satellite.

Gukora ibikoresho bya elegitoroniki: Bikoreshwa mu guteza imbere kristu za SiC nziza cyane nk'ibikoresho bya substrate bya LEDs, ultraviolet detectors na lasers.

Ubushakashatsi bwa siyansi n'umusaruro muke: ku bushakashatsi bwo muri laboratwari no guteza imbere ibikoresho bishya kugira ngo bishyigikire udushya no kunoza ikoranabuhanga ryo gukura kwa kristu ya SiC.

Gukora ibikoresho bishyuha cyane: Bikoreshwa mu gukura kristu za SiC zirwanya ubushyuhe bwinshi nk'ibikoresho by'ibanze byo mu kirere no mu byuma bipima ubushyuhe bwinshi.

Ibikoresho na serivisi bya SiC furnace bitangwa n'ikigo

XKH yibanda ku iterambere n'inganda z'ibikoresho bya SIC crystal furnace, itanga serivisi zikurikira:

Ibikoresho byihariye: XKH itanga amatanura yihariye yo gukura afite uburyo butandukanye bwo gukura nka PTV na TSSG hakurikijwe ibyo abakiriya bakeneye.

Ubufasha mu bya tekiniki: XKH itanga ubufasha mu bya tekiniki ku bakiriya bayo mu gikorwa cyose kuva ku kunoza uburyo bwo gukura kw'ibikoresho kugeza ku kubungabunga ibikoresho.

Serivisi zo Guhugura: XKH itanga amahugurwa ku mikorere n'ubuyobozi bwa tekiniki ku bakiriya kugira ngo ikore neza ibikoresho.

Serivisi nyuma yo kugurisha: XKH itanga serivisi yo gusubiza vuba nyuma yo kugurisha no kuvugurura ibikoresho kugira ngo umusaruro w'abakiriya ukomeze.

Ikoranabuhanga ryo gukura kristu ya silicon carbide (nka PTV, Lely, TSSG, LPE) rifite akamaro kanini mu bijyanye n'amashanyarazi, ibikoresho bya RF na optoelectronics. XKH itanga ibikoresho bigezweho bya SiC furnace hamwe na serivisi zitandukanye zo gushyigikira abakiriya mu gukora kristu za SiC nziza cyane no gufasha iterambere ry'inganda za semiconductor.