SiC wafer 4H-N 6H-N HPSI 4H-igice 6H-igice 4H-P 6H-P 3C ubwoko bwa 2inch 3inch 4inch 6inch 8inch

Ibisobanuro bigufi:

Dutanga ubwoko butandukanye bw'ama-wafers meza ya SiC (Silicon Carbide), twibanda cyane cyane ku ma-wafers yo mu bwoko bwa N-type 4H-N na 6H-N, meza cyane mu gukoresha mu byuma bigezweho bya optoelectronics, ibikoresho by'amashanyarazi, n'ahantu hashyuha cyane. Izi wafers zo mu bwoko bwa N zizwiho gutwara ubushyuhe budasanzwe, kudahungabana kw'amashanyarazi, no kuramba gutangaje, bigatuma ziba nziza cyane mu bikorwa byo mu rwego rwo hejuru nko gukoresha amashanyarazi, sisitemu zitwara ibinyabiziga by'amashanyarazi, inverters zikoresha ingufu zisubira, n'amashanyarazi yo mu nganda. Uretse serivisi zacu zo mu bwoko bwa N, dutanga kandi ama-wafers yo mu bwoko bwa P-type 4H/6H-P na 3C SiC ku bikenewe byihariye, harimo ibikoresho bifite frequency nyinshi na RF, ndetse no gukoresha fotonike. Ama-wafers yacu aboneka mu bunini buri hagati ya santimetero 2 na santimetero 8, kandi dutanga ibisubizo byihariye kugira ngo bihuze n'ibikenewe mu nzego zitandukanye z'inganda. Ku bindi bisobanuro cyangwa ibibazo, nyamuneka twandikire.

Ohereza imeri kuri twe

Ibiranga

Imitungo

Agace k'umugati gakozwe mu bwoko bwa 4H-NN

4H-N na 6H-N (Uduce twa SiC two mu bwoko bwa N)

Porogaramu:Ikoreshwa cyane cyane mu bikoresho by'ikoranabuhanga bikoresha ingufu, ibikoresho by'ikoranabuhanga bikoresha optoelectronics, ndetse n'ibikoresho bikoresha ubushyuhe bwinshi.

Ingano y'umurambararo:Kuva kuri mm 50.8 kugeza kuri mm 200.

Ubunini:350 μm ± 25 μm, hamwe n'ubugari bushoboka bwa 500 μm ± 25 μm.

Ubushobozi bwo kwirinda:Ubwoko bwa N 4H/6H-P: ≤ 0.1 Ω·cm (urwego rwa Z), ≤ 0.3 Ω·cm (urwego rwa P); Ubwoko bwa N 3C-N: ≤ 0.8 mΩ·cm (urwego rwa Z), ≤ 1 mΩ·cm (urwego rwa P).

Ubukana:Ra ≤ 0.2 nm (CMP cyangwa MP).

Ubucucike bw'imiyoboro mito (MPD):< 1 kuri buri kimwe/cm².

Televiziyo ya TV: ≤ 10 μm kuri diameter yose.

Igishushanyo: ≤ 30 μm (≤ 45 μm ku dupfunyika twa santimetero 8).

Kutagaragaza Edge:Kuva kuri mm 3 kugeza kuri mm 6 bitewe n'ubwoko bwa wafer.

Gupfunyika:Kaseti ifite wafer nyinshi cyangwa agakoresho kamwe ka wafer.

Ingano iboneka: 3inch 4inch 6inch 8inch

HPSI (Ibikoresho bya SiC bya High Purity Semi-Insulating Wafers)

Porogaramu:Ikoreshwa ku bikoresho bisaba ubushobozi bwo guhangana n'ingufu kandi bihamye, nk'ibikoresho bya RF, porogaramu za fotonike, na sensor.

Ingano y'umurambararo:Kuva kuri mm 50.8 kugeza kuri mm 200.

Ubunini:Ubunini busanzwe bwa 350 μm ± 25 μm hamwe n'amahitamo y'udupira tunini twa wafers kugeza kuri 500 μm.

Ubukana:Ra ≤ 0.2 nm.

Ubucucike bw'imiyoboro mito (MPD): ≤ 1 buri kimwe/cm².

Ubushobozi bwo kwirinda:Ubudahangarwa bwinshi, bukunze gukoreshwa mu bikorwa byo kwirinda ubushyuhe.

Igishushanyo: ≤ 30 μm (ku bunini buto), ≤ 45 μm ku bunini bunini.

Televiziyo ya TV: ≤ 10 μm.

Ingano iboneka: 3inch 4inch 6inch 8inch

4H-P、6H-P&3C agace ka SiC(Uduce twa SiC two mu bwoko bwa P)

Porogaramu:Mbere na mbere ku bikoresho by'amashanyarazi n'ibikoresha umurongo munini.

Ingano y'umurambararo:Kuva kuri mm 50.8 kugeza kuri mm 200.

Ubunini:350 μm ± 25 μm cyangwa amahitamo yihariye.

Ubushobozi bwo kwirinda:Ubwoko bwa P 4H/6H-P: ≤ 0.1 Ω·cm (icyiciro cya Z), ≤ 0.3 Ω·cm (icyiciro cya P).

Ubukana:Ra ≤ 0.2 nm (CMP cyangwa MP).

Ubucucike bw'imiyoboro mito (MPD):< 1 kuri buri kimwe/cm².

Televiziyo ya TV: ≤ 10 μm.

Kutagaragaza Edge:Kuva kuri mm 3 kugeza kuri mm 6.

Igishushanyo: ≤ 30 μm ku ngano nto, ≤ 45 μm ku ngano nini.

Ingano iboneka ni 3inch 4inch 6inch5×5 10×10

Imbonerahamwe y'ibipimo by'amakuru by'igice

Umutungo	santimetero 2		santimetero 3		santimetero 4	santimetero 6	santimetero 8
Ubwoko	4H-N/HPSI/ 6H-N/4H/6H-P/3C;		4H-N/HPSI/ 6H-N/4H/6H-P/3C;		4H-N/HPSI//4H/6H-P/3C;	4H-N/HPSI//4H/6H-P/3C;	4H-N/HPSI/4H-SEMI
Ingano	50.8 ± 0.3 mm		76.2±0.3mm		100±0.3mm	150±0.3mm	200 ± 0.3 mm
Ubunini	330 ± 25 um		350 ± 25 um		350 ± 25 um	350 ± 25 um	350 ± 25 um
	350±25um ；		500±25um		500±25um	500±25um	500±25um
	cyangwa byahinduwe		cyangwa byahinduwe		cyangwa byahinduwe	cyangwa byahinduwe	cyangwa byahinduwe
Ubukana	Ra ≤ 0.2nm		Ra ≤ 0.2nm		Ra ≤ 0.2nm	Ra ≤ 0.2nm	Ra ≤ 0.2nm
Ifuro	≤ 30um		≤ 30um		≤ 30um	≤ 30um	≤45um
Televiziyo ya TV	≤ 10um		≤ 10um		≤ 10um	≤ 10um	≤ 10um
Gukata/Gucukura	CMP/MP
MPD	<1 kuri buri kimwe/cm-2	<1 kuri buri kimwe/cm-2		<1 kuri buri kimwe/cm-2		<1 kuri buri kimwe/cm-2		<1 kuri buri kimwe/cm-2
Imiterere	Uzengurutse, Ufite uburebure bwa mm 16; ubw'uburebure bwa mm 22; ubw'uburebure bwa mm 30/32.5; ubw'uburebure bwa mm 47.5; URUKUNDO; URUKUNDO;
Bevel	45°, Igice cya kabiri; Imiterere ya C
Icyiciro	Icyiciro cy'umusaruro wa MOS na SBD; Icyiciro cy'ubushakashatsi; Icyiciro cy'udusimba, Icyiciro cya wafer y'imbuto
Ibitekerezo	Ingano, Ubunini, Icyerekezo, ibisobanuro byavuzwe haruguru bishobora guhindurwa uko ubisabye

Porogaramu

·Ingufu z'amashanyarazi

Udupira twa SiC two mu bwoko bwa N ni ingenzi cyane mu bikoresho by'ikoranabuhanga bikoresha ingufu bitewe n'ubushobozi bwabyo bwo gucunga ingufu nyinshi n'umuriro mwinshi. Dukunze gukoreshwa mu byuma bihindura ingufu, inverters, na moteri ku nganda nka ingufu zishobora kuvugururwa, imodoka zikoresha amashanyarazi, n'ibikoresho byikora mu nganda.

· Ikoranabuhanga rya Optoelectronics
Ibikoresho bya SiC byo mu bwoko bwa N, cyane cyane ku bikoresho bya optoelectronic, bikoreshwa mu bikoresho nka diode zitanga urumuri (LED) na diode za laser. Uburyo bwazo bwo gutwara ubushyuhe bwinshi n'icyuho kinini bituma ziba nziza ku bikoresho bya optoelectronic bikora neza.

·Porogaramu zikoresha ubushyuhe bwinshi
4H-N 6H-N SiC wafers zikwiriye ahantu hashyuha cyane, nko mu byuma bipima n'ibikoresho by'amashanyarazi bikoreshwa mu kirere, mu modoka, no mu nganda aho gukwirakwiza ubushyuhe no kudatezuka ku bushyuhe buri hejuru ari ingenzi cyane.

·Ibikoresho bya RF
4H-N 6H-N SiC wafers zikoreshwa mu bikoresho bya radio frequency (RF) bikora mu buryo bwa frequency yo hejuru. Zikoreshwa muri sisitemu y'itumanaho, ikoranabuhanga rya radar, n'itumanaho rya satelite, aho ingufu nyinshi n'imikorere biba bikenewe.

·Porogaramu zo gufotora
Muri fotoniki, SiC wafers zikoreshwa mu bikoresho nka fotodetectors na modulators. Imiterere yihariye y'iyi mashini ituma igira akamaro mu gukora urumuri, guhinduranya no gutahura amashusho muri sisitemu z'itumanaho ry'amajwi n'ibikoresho byo gufata amashusho.

·Ibikoresho byo mu mutwe
Udupira twa SiC dukoreshwa mu buryo butandukanye bwo gupima, cyane cyane ahantu habi aho ibindi bikoresho bishobora kwangirika. Muri two harimo ubushyuhe, umuvuduko, n'ibikoresho bya shimi, ibyo bikaba ari ingenzi mu bijyanye no kugenzura ibinyabiziga, peteroli na gaze, ndetse no kugenzura ibidukikije.

·Sisitemu zo gutwara ibinyabiziga by'amashanyarazi
Ikoranabuhanga rya SiC rigira uruhare runini mu binyabiziga bikoresha amashanyarazi mu kunoza imikorere n'imikorere ya sisitemu zo gutwara. Hamwe na semiconductors zikoresha ingufu za SiC, ibinyabiziga bikoresha amashanyarazi bishobora kugira ubuzima bwiza bwa batiri, igihe cyo gusharija vuba, no gukoresha neza ingufu.

·Ibikoresho bigezweho byo mu bwoko bwa Sensors na Photonic Converters
Mu ikoranabuhanga rigezweho rya sensor, SiC wafers zikoreshwa mu gukora sensors zifite ubuhanga bwo hejuru mu gukoresha mu ikoranabuhanga rya robots, ibikoresho by'ubuvuzi, no kugenzura ibidukikije. Mu mashini zihindura imiterere ya photonic, imiterere ya SiC ikoreshwa kugira ngo ihindure neza ingufu z'amashanyarazi mu bimenyetso by'urumuri, ibyo bikaba ari ingenzi mu itumanaho no mu bikorwa remezo bya interineti byihuta.

Ibibazo n'Ibisubizo

Q：4H muri 4H SiC ni iki?
A"4H" muri 4H SiC yerekeza ku miterere ya kristu ya karubide ya silikoni, cyane cyane ishusho ya hexagonal ifite urwego rune (H). "H" yerekana ubwoko bwa hexagonal polytype, ibutandukanya n'izindi polytype za SiC nka 6H cyangwa 3C.

Q：Ubushyuhe bwa 4H-SiC butwara gute?
A:Ubushyuhe bwa 4H-SiC (Silicon Carbide) bungana na 490-500 W/m·K mu bushyuhe bw'icyumba. Ubu bushyuhe bwinshi butuma buba bwiza cyane mu bikorwa by'ikoranabuhanga rigezweho n'ahantu hashyuha cyane, aho gukwirakwiza ubushyuhe neza ari ingenzi.

Ibanjirije iyi: Uburyo bwo gukora umuyoboro wa safiro bugezweho, butanga ubukana bwinshi bwa Al2O3 kristu, burwanya kwangirika cyane, EFG/KY, bukozwe mu buryo butandukanye.

Ibikurikira: Kaseti ya wafer imwe ya santimetero 2.5 ikoreshwa mu gasanduku ka wafer PP cyangwa PC Ikoreshwa mu bisubizo bya wafer. 1.5 intimetero 3.5 intimetero 4.5 intimetero 6.5 intimetero 12 irahari.