SiC
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Ingot 6 za Silicon Carbide 4H-SiC Semi-Insulation, Dummy Grade
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Ubwoko bwa SiC Ingot 4H Dia 4inch 6inch Ubunini 5-10mm Ubushakashatsi / Igipimo cy'udushushanyo
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Sic Substrate Silicon Carbide Wafer 4H-N Ubwoko bwo gukomera cyane no kurwanya ingese Prime Grade Polishing
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Silicon Carbide Wafer ya 6H-N Ubwoko bwa Prime Grade Research Grade Dummy Grade 330μm 430μm Ubunini
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Igice cya silikoni carbide cya santimetero 2 gifite umurambararo wa 6H-N ufite impande ebyiri ukozwe mu buryo bwa polished, gifite uburebure bwa mm 50.8.
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Substrates za N-Type SiC Composite Dia6inch monocrystalline nziza cyane kandi substrate ifite ubuziranenge buke
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Ibyuma bito bikingira SiC Composite bipima uburebure bwa dia2inch 4inch 6inch 8inch HPSI
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Ubwoko bwa N-Type SiC kuri Si Composite Substrates Dia6inch
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SiC substrate Dia200mm 4H-N na HPSI Silicon carbide
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Umusaruro wa substrate ya SiC ya santimetero 3.5 (Diameter 76.2mm 4H-N)
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SiC substrate P na D grade Dia50mm 4H-N 2inch
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Ubwoko bwa SiC Ingot 4H-N Dummy grade 2inch 3inch 4inch Ubugari bwa 6inch: ＞10mm