SICOI (Silicon Carbide kuri Insulator) Wafers SiC Film KURI Silicon

Ibisobanuro bigufi:

Wafer za Silicon Carbide on Insulator (SICOI) ni substrates za semiconductor zo mu gisekuru gitaha zihuza imiterere myiza y’umubiri n’iy’ikoranabuhanga ya silicon carbide (SiC) hamwe n’imiterere y’amashanyarazi yihariye yo kwitandukanya kw’urwego rw’ubushyuhe, nka silicon dioxide (SiO₂) cyangwa silicon nitride (Si₃N₄). Wafer isanzwe ya SICOI igizwe n’urwego rworoshye rwa epitaxial SiC, firime yo hagati yo kwikingira, hamwe n’urufunguzo rw’ibanze rushyigikira, rushobora kuba silicon cyangwa SiC.

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Gushyiraho wafer za Silicon Carbide kuri Insulator (SICOI)

Iyi miterere y’ikoranabuhanga ivanze yakozwe kugira ngo ihuze n’ibikenewe cyane by’ibikoresho by’ikoranabuhanga bifite ingufu nyinshi, frequency nyinshi, n’ubushyuhe bwinshi. Binyuze mu gushyiramo urwego rwo gukingira, SICOI wafers zigabanya ubushobozi bwa parasitesi kandi zikagabanya amazi asohoka, bityo zigatuma frequency zikora neza, zigakora neza, kandi zigacunga neza ubushyuhe. Izi nyungu zituma zigira agaciro gakomeye mu nzego nko mu modoka zikoresha amashanyarazi, ibikorwa remezo by’itumanaho bya 5G, sisitemu z’indege, ibikoresho by’ikoranabuhanga bya RF bigezweho, n’ikoranabuhanga rya MEMS sensor.

Ihame ry'umusaruro wa SICOI Wafers

Udupira twa SICOI (Silicon Carbide on Insulator) dukorwa hakoreshejwe uburyo bugezweho bwouburyo bwo gufatanya no gukata wafer:

Iterambere rya SiC Substrate– Hateguwe wafer nziza cyane ya SiC ifite ubuziranenge bwa crystal (4H/6H) nk'ibikoresho by'umuterankunga.
Gushyiramo urwego rw'ubushyuhe mu buryo butuma ibintu bitagira ubushyuhe– Agakoresho gakingira ubushyuhe (SiO₂ cyangwa Si₃N₄) gakorwa ku gikoresho gitwara ibintu (Si cyangwa SiC).
Guhuza Wafer– Wafer ya SiC n'uwafer ifata ibintu bifatanye hamwe hakoreshejwe ubushyuhe bwinshi cyangwa plasma.
Gutunganya no Gusukura– Umugati wa SiC donor ugabanywa kugeza kuri mikorometero nke hanyuma ugasenwa kugira ngo ubone ubuso bworoshye bwa atome.
Igenzura rya nyuma– Agace ka SICOI kamaze kuzura karageragezwa kugira ngo harebwe ubunini, imiterere y'ubuso ihamye, n'imikorere y'ubushyuhe.

Binyuze muri ubu buryo,urwego rworoshye rwa SiC rukoraifite imiterere myiza y'amashanyarazi n'ubushyuhe, ihuzwa na firime irinda ubushyuhe n'icyuma gishyigikira, bigatuma habaho urubuga rwiza rw'amashanyarazi n'ibikoresho bya RF byo mu gisekuru gitaha.

Ibyiza by'ingenzi bya SICOI Wafers

Icyiciro cy'ibiranga	Ibiranga tekiniki	Ibyiza by'ingenzi
Imiterere y'ibikoresho	Filime ikora ya 4H/6H-SiC + icyuma gikingira ubushyuhe (SiO₂/Si₃N₄) + Si cyangwa SiC	Bituma habaho kwitandukanya gukomeye kw'amashanyarazi, bigabanya kwivanga kw'udukoko twangiza ibidukikije
Imiterere y'amashanyarazi	Ingufu nyinshi zo kwangirika (> 3 MV/cm), igihombo gito cya dielectric	Yakozwe neza kugira ngo ikoreshwe mu buryo bwa voltage nyinshi kandi ikoreshwe mu buryo bwa frequency nyinshi
Imiterere y'ubushyuhe	Ubushyuhe bugera kuri 4.9 W/cm·K, buhamye hejuru ya 500°C	Igabanya ubushyuhe neza, ikora neza cyane mu gihe cy'ubushyuhe bukabije
Imiterere ya mekanike	Ubukana bukabije (Mohs 9.5), igipimo gito cyo kwaguka k'ubushyuhe	Ikomeye mu kurwanya stress, yongera igihe kirekire cy'ibikoresho
Ubwiza bw'ubuso	Ubuso bworoshye cyane (Ra <0.2 nm)	Iteza imbere epitaxy idafite inenge kandi ikora ibikoresho byizewe
Ubwikorezi bw'ubushyuhe	Ubushobozi bwo kwirinda >10¹⁴ Ω·cm, umuvuduko wo kuvogera muke	Imikorere yizewe muri porogaramu za RF na porogaramu zo kwitandukanya zifite amashanyarazi menshi
Ingano n'Uburyo bwo kuyihindura	Iboneka mu buryo bwa santimetero 4, 6, na 8; Ubunini bwa SiC 1–100 μm; ubushyuhe 0.1–10 μm	Igishushanyo mbonera cyoroshye gishingiye ku bisabwa bitandukanye mu ikoreshwa

Uturere tw'ingenzi dukoreshwa

Urwego rw'Ikoreshwa	Ibipimo Bisanzwe Bikoreshwa	Ibyiza by'Imikorere
Ingufu z'amashanyarazi	Inverters za EV, sitasiyo zo gusharija, ibikoresho by'amashanyarazi by'inganda	Umuvuduko mwinshi w'amashanyarazi, kugabanuka k'igihombo cyo guhinduranya
RF na 5G	Amplifiers z'amashanyarazi za sitasiyo y'ibanze, ibice bya milimetero-wave	Itera indwara nke, ishyigikira ibikorwa bya GHz-range
Ibikoresho bya MEMS	Ibikoresho by'umuvuduko w'ibidukikije bikomeye, MEMS yo mu rwego rwo hejuru	Ubushyuhe bwinshi butuje, burwanya imirasire
Ibyerekeye Ikiresiteri n'Ubwunganizi mu by'Indege	Itumanaho rya satelite, modules z'amashanyarazi ya avionics	Kwizerwa mu bushyuhe bukabije n'imirasire
Udukoresho tw'ubwenge	Imashini zihindura HVDC, imashini zigabanya umuvuduko w'amashanyarazi	Ubushyuhe bwinshi bugabanya ibura ry'amashanyarazi
Ikoranabuhanga rya Optoelectronics	Amatara ya UV, substrates za laser	Ubwiza bwo hejuru bwa kristale butuma urumuri rusohoka neza

Gukora 4H-SiCOI

Gukora wafer za 4H-SiCOI bigerwaho binyuze muuburyo bwo guhuza no gukata insinga, bifasha ahantu ho gukingira ubushyuhe hagezweho hamwe n'ibice bikora bya SiC bidafite inenge.

a: Ishusho y'ikorwa rya platform y'ibikoresho bya 4H-SiCOI.
b: Ishusho y'agace k'inyuma ka santimetero 4 ka 4H-SiCOI gakoresha uburyo bwo gufatanya no gukata; hagaragajwe ahantu hafite inenge.
c: Ingano y'ubunini bw'igice cya 4H-SiCOI.
d: Ishusho y'ishusho y'icyuma cya 4H-SiCOI.
e: Imiterere y'imikorere yo gukora resonator ya microdisk ya SiC.
f: SEM y'ishusho yuzuye ya microdisk resonator.
g: SEM yagutse igaragaza urukuta rw'inyuma rwa resonator; ishusho ya AFM igaragaza uburyo ubuso butoshye bwa nanoscale.
h: SEM ifatana igaragaza ubuso bwo hejuru bufite ishusho nk'iya parabola.

Ibibazo Bikunze Kubazwa ku birebana n'amafunguro ya SICOI Wafers

Q1: Ni izihe nyungu SICOI wafers zifite ugereranyije na SiC wafers gakondo?
A1: Bitandukanye na substrates zisanzwe za SiC, SICOI wafers zirimo urwego rukingira ubushyuhe rugabanya ubushobozi bwa parasite n'imigezi isohoka, bigatuma habaho imikorere myiza, igisubizo cyiza cy'inshuro nyinshi, ndetse n'imikorere myiza y'ubushyuhe.

Q2: Ni ingano zingana iki za wafer zisanzwe ziboneka?
A2: Udupira twa SICOI dukunze gukorwa mu buryo bwa santimetero 4, santimetero 6, na santimetero 8, hamwe na SiC yihariye n'ubugari bw'urwego rukingira bitewe n'ibikenewe n'igikoresho.

Q3: Ni izihe nganda zungukira cyane kuri wafer za SICOI?
A3: Inganda z'ingenzi zirimo amashanyarazi akoreshwa mu modoka zikoresha amashanyarazi, amashanyarazi akoreshwa mu itumanaho rya RF kuri 5G, MEMS ku bikoresho by'indege, na optoelectronics nka UV LEDs.

Q4: Ni gute urwego rwo gukingira amashanyarazi rutuma igikoresho gikora neza?
A4: Filimi irinda ubushyuhe (SiO₂ cyangwa Si₃N₄) irinda amazi kuva kandi ikagabanya itumanaho ry’amashanyarazi, bigatuma ingufu z’amashanyarazi zikomeza kwiyongera, guhinduranya neza no kugabanya ubushyuhe.

Q5: Ese wafer za SICOI zikwiriye gukoreshwa mu bushyuhe bwinshi?
A5: Yego, hamwe n’ubushyuhe bwinshi n’ubudahangarwa burenga 500°C, SICOI wafers zagenewe gukora neza mu gihe cy’ubushyuhe bwinshi no mu bidukikije bikomeye.

Q6: Ese wafer za SICOI zishobora guhindurwa?
A6: Yego rwose. Abakora batanga imiterere yihariye ijyanye n'ubugari bwihariye, urwego rw'imiti ikoreshwa mu gukaraba, n'uruvange rw'ibintu bivangwa n'amazi kugira ngo bahuze n'ubushakashatsi butandukanye n'ibikenewe mu nganda.

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