Wafer ya Silicon Dioxide SiO2 ifite ubunini bwa polished, Prime na Test Grade
Shyiraho agasanduku ka wafer
| Igicuruzwa | Uduce twa wafer twa Oxide y'ubushyuhe (Si + SiO2) |
| Uburyo bwo gukora | LPCVD |
| Gusukura ubuso | SSP/DSP |
| Ingano | Santimetero 2 / Santimetero 3 / Santimetero 4 / Santimetero 5 / Santimetero 6 |
| Ubwoko | Ubwoko bwa P / Ubwoko bwa N |
| Ubunini bw'urwego rwa oxidation | 100nm ~ 1000nm |
| Icyerekezo | <100> <111> |
| Ubushobozi bwo guhangana n'amashanyarazi | 0.001-25000 (Ω•cm) |
| Porogaramu | Ikoreshwa mu gutwara ingero z'imirasire ya synchrotron, gutwikira PVD/CVD nk'ishingiro, ingero z'ikura ry'imirasire ya magnetron, XRD, SEM,Imbaraga za atomiki, spectroscopy ya infrared, spectroscopy ya fluorescence n'ibindi bikoresho byo gupima isesengura, ibikoresho byo gukura bya molekile, isesengura rya X-ray rya semiconductors za crystalline |
Uduce twa silicon oxyde ni uduce twa silicon dioxide duhingwa ku buso bwa silicon wafers hakoreshejwe ogisijeni cyangwa umwuka w'amazi ku bushyuhe bwinshi (800°C ~ 1150°C) hakoreshejwe uburyo bwo gushyushya hakoreshejwe ibikoresho by'ifuru y'umuvuduko w'ikirere. Ubunini bw'uburyo buva kuri nanometero 50 kugeza kuri mikoroni 2, ubushyuhe bw'uburyo bugera kuri dogere selisiyusi 1100, uburyo bwo gukura bugabanyijemo ubwoko bubiri bwa "ogisijeni itose" na "ogisijeni yumye". Ogisijeni y'ubushyuhe ni urwego rwa ogisijeni "rwakuze", rufite ubushobozi bwo guhuza, kwikubira neza no gukomera kwa dielectric kuruta urundi rwego rwa CVD deposited oxide, bigatuma habaho ubwiza buhebuje.
Gusukura ogisijeni yumye
Silikoni ihura na ogisijeni kandi urwego rwa ogisijeni ruhora rwerekeza ku rundi ruhande. Ogisijeni yumye igomba gukorwa ku bushyuhe buri hagati ya 850 na 1200°C, hamwe n'igipimo cyo gukura gito, kandi ishobora gukoreshwa mu gukura kw'irembo rya MOS rifunze. Ogisijeni yumye ikundwa kuruta ogisijeni itose iyo hakenewe urwego rwa ogisijeni yumye kandi rworoshye cyane. Ubushobozi bwo ogisijeni yumye: 15nm ~ 300nm.
2. Gusukura amazi mu mazi
Ubu buryo bukoresha umwuka w'amazi kugira ngo bukore urwego rwa okiside winjira mu ifuru mu gihe cy'ubushyuhe bwinshi. Ubucucike bwa okiside itose ni bubi gato kurusha okiside yumye, ariko ugereranije na okiside yumye, inyungu yabwo ni uko bufite igipimo cyo gukura kiri hejuru, gikwiriye gukura kwa filimi irenga 500nm. Ubushobozi bwa okiside itose: 500nm ~ 2µm.
Umuyoboro w’ifuru wa AEMD ukoresha umuvuduko w’ikirere ni umuyoboro w’ifuru utambitse wo muri Tchèque, urangwa no kudahindagurika kw’imikorere, imiterere myiza ya firime no kugenzura neza uduce duto. Umuyoboro w’ifuru wa silicon oxide ushobora gutunganya wafer zigera kuri 50 kuri buri muyoboro, hamwe n’imiterere myiza y’imbere n’iy’imbere y’umuyoboro.
Ishusho irambuye
