SiC Ceramic Tray Iherezo Ingaruka Wafer Gukoresha Ibikoresho-Byakozwe
SiC Ceramic & Alumina Ceramic Ibigize Custom Incamake
Silicon Carbide (SiC) Ceramic Custom Component
Silicon Carbide (SiC) ceramic yibikoresho byabugenewe nibikoresho byinganda zikora inganda zikomeye zizwi cyane kubyoubukana buhanitse cyane, ubushyuhe buhebuje bwumuriro, kurwanya ruswa idasanzwe, hamwe nubushyuhe bwinshi. Silicon Carbide (SiC) ceramic yihariye igizwe nibishobora kugumya guhagarara neza muriibidukikije byo hejuru cyane mugihe urwanya isuri ituruka kuri acide ikomeye, alkalis, nicyuma gishongeshejwe. Ubukorikori bwa SiC bukozwe mubikorwa nkakutagira igitutu, gucumura, cyangwa gushyushya-gukandakandi irashobora guhindurwa muburyo bugoye, harimo impeta ya kashe ya mashini, amaboko ya shaft, nozzles, umuyoboro w'itanura, ubwato bwa wafer, hamwe nibyapa bitarinda kwambara.
Ibikoresho bya Alumina Ceramic
Alumina (Al₂O₃) ceramic gakondo igizwe nibishimangiragukingirwa cyane, imbaraga zumukanishi, no kwambara birwanya. Bishyizwe mu byiciro byera (urugero, 95%, 99%), Alumina (Al₂O₃) ceramic yibikoresho byabugenewe hamwe nogukora neza birabemerera gukorerwa insulator, ibyuma, ibikoresho byo gukata, hamwe nubuvuzi. Ububiko bwa Alumina bukorwa cyane cyane binyuzegukanda byumye, gushushanya inshinge, cyangwa uburyo bwo gukanda isostatike, hamwe nubuso bushobora guhindurwa kugeza indorerwamo.
XKH kabuhariwe muri R&D no gutunganya ibicuruzwa byasilicon karbide (SiC) na alumina (Al₂O₃) ceramics. Ibicuruzwa bya ceramic byibanda ku bushyuhe bwo hejuru, kwambara cyane, hamwe n’ibidukikije byangirika, bikubiyemo porogaramu zikoreshwa mu gice cya kabiri (urugero, ubwato bwa wafer, ipantaro ya kantileveri, imiyoboro y’itanura) kimwe n’ibice byo mu muriro hamwe n’ibidodo byo mu rwego rwo hejuru mu nzego nshya z’ingufu. Ibicuruzwa bya alumina byibumba byibanda ku kubika, gufunga, hamwe n’ibinyabuzima, harimo ibikoresho bya elegitoroniki, impeta ya kashe, hamwe n’ubuvuzi. Gukoresha tekinoroji nkagukanda isostatike, gucumura nta gahato, no gutunganya neza, dutanga ibisubizo bihanitse byashizwe mubikorwa byinganda zirimo semiconductor, Photovoltaics, icyogajuru, ubuvuzi, hamwe nogutunganya imiti, kwemeza ko ibice byujuje ibisabwa kugirango bisobanuke neza, kuramba, no kwizerwa mubihe bikabije.
SiC Ceramic Imikorere Chucks & CMP Gusya Disiki Intangiriro
SiC Ceramic Vacuum Chucks
Silicon Carbide (SiC) Ceramic Vacuum Chucks ni ibikoresho bya adsorption bihanitse bikozwe mu bikoresho byo mu bwoko bwa silicon karbide (SiC). Byashizweho byumwihariko kubisabwa bisaba isuku ikabije kandi itajegajega, nka semiconductor, Photovoltaic, ninganda zikora neza. Ibyiza byabo byingenzi birimo: hejuru yindorerwamo isennye hejuru (uburinganire bugenzurwa na 0.3-0.5 mm), gukomera cyane hamwe na coefficient nkeya yo kwagura ubushyuhe (kwemeza imiterere ya nano kurwego no guhagarara neza), imiterere yoroheje cyane (kugabanya cyane inertia yimikorere), hamwe no kwihanganira kwambara bidasanzwe (ubukana bwa Mohs bugera kuri 9.5, burenze kure ubuzima bwicyuma). Iyi mitungo ituma imikorere ihamye mubidukikije hamwe nubushyuhe bwo hejuru nubushyuhe buke, kwangirika gukomeye, hamwe no gufata byihuse, kuzamura cyane umusaruro wo gutunganya no gukora neza kubice byuzuye nka wafer nibintu byiza.
Silicon Carbide (SiC) Bump Vacuum Chuck ya Metrology no Kugenzura
Yateguwe kubikorwa byo kugenzura inenge ya wafer, iki gikoresho cyo hejuru cya adsorption cyakozwe muri silicon carbide (SiC) ceramic material. Imiterere yihariye yububiko itanga imbaraga zikomeye za vacuum adsorption mugihe hagabanijwe aho uhurira na wafer, bityo bikarinda kwangirika cyangwa kwanduzwa hejuru ya wafer no kwemeza ituze nukuri mugihe cyo kugenzura. Chuck igaragaramo uburinganire budasanzwe (0.3–0.5 μ m) hamwe nubuso busize indorerwamo, bufatanije nuburemere bwumucyo mwinshi hamwe no gukomera kugirango habeho ituze mugihe cyihuta. Coefficente nkeya cyane yo kwagura ubushyuhe itanga ihame ryimiterere ihindagurika ryubushyuhe, mugihe imyambarire idasanzwe yo kwagura ubuzima bwa serivisi. Igicuruzwa gishyigikira kwihindura muburyo bwa 6, 8, na 12-santimetero kugirango uhuze ibikenewe byo kugenzura ubunini bwa wafer butandukanye.
Flip Chip Bonding Chuck
Flip chip ihuza chuck nikintu cyingenzi mubikorwa byo guhuza chip flip-chip, byakozwe muburyo bwihariye bwo kwamamaza wafers kugirango habeho ituze mugihe cyihuta cyihuse, cyihuse. Igaragaza indorerwamo isize indorerwamo (uburinganire / parallelism ≤1 μ m) hamwe na gazi ya gazi itomoye kugirango igere ku mbaraga imwe ya vacuum adsorption, ikumira kwimura wafer cyangwa kwangirika. Gukomera kwayo hamwe na coefficient ya ultra-low yo kwaguka yubushyuhe (hafi yibikoresho bya silikoni) itanga umutekano muke mubidukikije bihuza ubushyuhe bwo hejuru, mugihe ibintu byinshi cyane (urugero, karbide ya silicon cyangwa ceramique yihariye) birinda neza kwinjiza gaze, bikomeza kwizerwa kwigihe kirekire. Ibi biranga hamwe bishyigikira micron-urwego rwo guhuza neza kandi byongera umusaruro wapakira chip.
SiC Bonding Chuck
Carbide ya silicon (SiC) ihuza ibice byingenzi murwego rwo guhuza chip, byakozwe muburyo bwihariye bwo kwamamaza no kurinda wafer, bigatuma imikorere ihamye cyane mugihe cy'ubushyuhe bwo hejuru hamwe n’umuvuduko mwinshi. Yakozwe mu bucucike bwa silicon karbide ceramic (porosity <0.1%), igera ku gukwirakwiza imbaraga za adsorption imwe (gutandukana <5%) binyuze mu ndorerwamo ya nanometero yo mu rwego rwa nanometer (uburinganire bw’ubutaka Ra <0.1 μm) hamwe n’imiyoboro ya gazi isobanutse neza (diameter ya pore: 5-50 μ m), ikumira kwimuka kwa wafer cyangwa kwangirika kwubutaka. Coefficient ya ultra-low yo kwaguka k'ubushyuhe (4.5 × 10⁻⁶ / ℃) ihuye neza n'iya wafer ya silicon, bigabanya ubushyuhe bwintambara iterwa nintambara. Ufatanije no gukomera gukomeye (modulike ya elastike> 400 GPa) hamwe na ≤1 μm uburinganire / parallelism, byemeza guhuza guhuza neza. Byakoreshejwe cyane mubipfunyika bya semiconductor, stacking 3D, hamwe na Chiplet ihuza, ishyigikira porogaramu zo murwego rwohejuru zisaba gukora nanoscale neza hamwe nubushyuhe bwumuriro.
CMP Gusya
Disiki ya CMP ni igice cyibanze cyibikoresho byo gutunganya imashini (CMP), byashizweho kugirango bigumane neza kandi bihagarike waferi mugihe cyo kwihuta kwihuta, bituma nanometero ya nometero yisi yose. Yubatswe mubukomere bukabije, ibikoresho byinshi cyane (urugero, silicon carbide ceramics cyangwa amavuta yihariye), itanga imyuka ya vacuum imwe binyuze mumashanyarazi ya gazi yakozwe neza. Ubuso bwacyo busize indorerwamo (flatness / parallelism ≤3 μ m) byemeza ko nta mibonano ihangayikishijwe na wafers, mugihe coefficient ya ultra-nkeya yo kwagura ubushyuhe (ihuye na silicon) hamwe numuyoboro ukonjesha imbere uhagarika neza ihindagurika ryubushyuhe. Ihujwe na waferi ya santimetero 12 (750 mm diametre), disiki ikoresha tekinoroji yo guhuza ikwirakwizwa kugirango habeho kwishyira hamwe no kwizerwa kuramba kwinzego zinyuranye munsi yubushyuhe bwinshi nigitutu, bizamura cyane imikorere ya CMP hamwe numusaruro.
Hindura ibice bitandukanye bya Ceramika Ibice Intangiriro
Indorerwamo ya Silicon Carbide (SiC)
Indorerwamo ya Silicon Carbide (SiC) ni optique yuzuye ya optique ikozwe muri ceramic yambere ya silicon carbide ceramic, yagenewe cyane cyane ibikoresho byo mu rwego rwo hejuru bikoresha ibikoresho bya mashini nka mashini ya lithographie. Igera ku buremere bworoshye cyane no gukomera (modulus ya elastike> 400 GPa) ikoresheje igishushanyo mbonera cyoroheje (urugero, ubuki bwinyuma bwinyuma), mugihe coefficente yo kwaguka kwinshi cyane (≈4.5 × 10⁻⁶ / ℃) itanga ihame ryimiterere ihindagurika ryubushyuhe. Ubuso bw'indorerwamo, nyuma yo gusya neza, bugera kuri ≤1 μm uburinganire / uburinganire, kandi birwanya kwambara bidasanzwe (Mohs hardness 9.5) byongerera igihe cyo gukora. Ikoreshwa cyane mubikorwa bya mashini ya lithographie, ibyuma byerekana laser, hamwe na telesikopi yo mu kirere aho ultra-high precision and stabilite ari ngombwa.
Amashanyarazi ya Silicon Carbide (SiC)
Amashanyarazi ya Silicon Carbide (SiC) akoresha ikoreshwa rya tekinoroji yo mu kirere idahuza, aho gaze isunitswe ikora firime yo mu rwego rwa micron (ubusanzwe 3-20 mm) kugirango igere ku kugenda neza kandi kutanyeganyega. Batanga icyerekezo cya nanometrike (gusubiramo umwanya uhagije kugeza kuri n 75nm) hamwe na sub-micron geometrike neza (kugororoka ± 0.1-0.5μm, uburinganire ≤1μm), bigashobozwa no gufunga ibitekerezo byugarije umunzani cyangwa intera ya laser interferometero. Ibikoresho bya silicon karbide ceramic ceramic (amahitamo arimo Coresic® SP / Marvel Sic series) itanga ultra-high stiffness (elastique modulus> 400 GPa), coefficente yo kwagura ubushyuhe bukabije (4.0-4.5 × 10⁻⁶ / K, ihuye na silikoni), hamwe nubucucike bwinshi (porosity <0.1%). Igishushanyo cyacyo cyoroheje (ubucucike 3.1g / cm³, icya kabiri nyuma ya aluminium) kigabanya inertia yimikorere, mugihe kurwanya bidasanzwe kwambara (Mohs gukomera 9.5) hamwe nubushyuhe bwumuriro bituma kwizerwa kuramba mugihe cyihuta (1m / s) no kwihuta cyane (4G). Aya mabwiriza akoreshwa cyane muri semiconductor lithographie, kugenzura wafer, no gutunganya ultra-precision.
Silicon Carbide (SiC) Kwambukiranya ibiti
Silicon Carbide (SiC) Cross-Beams nibyingenzi byingenzi bigenewe ibikoresho bya semiconductor hamwe ninganda zo mu rwego rwo hejuru zikoreshwa mu nganda, cyane cyane zikora kugirango zitware ibyiciro bya wafer no kubayobora munzira zerekanwe kumuvuduko mwinshi, ultra-precision. Bakoresheje imbaraga za silicon karbide ceramic (amahitamo arimo Coresic® SP cyangwa Marvel Sic serie) hamwe nigishushanyo mbonera cyoroheje, bagera ku buremere bwumucyo mwinshi hamwe no gukomera (elastique modulus> 400 GPa), hamwe na coefficient ultra-low yo kwaguka k'ubushyuhe (≈4.5 × 10⁻⁶ / ℃) hamwe n'ubucucike bukabije (porosity <0.1%), byemeza ko nanometrike ihagaze neza. Ibikoresho byabo byahujwe bishyigikira ibikorwa byihuse kandi byihuse (urugero, 1m / s, 4G), bigatuma biba byiza kumashini ya lithographie, sisitemu yo kugenzura wafer, hamwe no gukora neza, byongera cyane imikorere yimikorere no gusubiza neza.
Ibikoresho bya Silicon Carbide (SiC)
Ibikoresho bya Silicon Carbide (SiC) nibice byingenzi bigenewe sisitemu yimikorere ya semiconductor yuzuye neza, ikoresha ibikoresho bya SiC byuzuye cyane (urugero, Coresic® SP cyangwa Marvel Sic seri, porosity <0.1%) hamwe nubushakashatsi bworoheje kugirango ugere kuburemere bwumucyo mwinshi (modulike elastike> 400 GPa). Hamwe na coefficient ya ultra-low yo kwaguka k'ubushyuhe (≈4.5 × 10⁻⁶ / ℃), baremeza ko nanometrike itajegajega (uburinganire / parallelism ≤1μm) munsi yubushyuhe bwumuriro. Iyi mitungo ihuriweho hamwe ishyigikira ibikorwa byihuse kandi byihuse (urugero, 1m / s, 4G), bigatuma biba byiza kumashini ya lithographie, sisitemu yo kugenzura wafer, hamwe no gukora neza, byongera cyane imikorere yibikorwa no gusubiza neza.
Silicon Carbide (SiC) Inzira nziza
Carbide ya Silicon (SiC) Optical Path Plate ni urubuga rwibanze rwashizweho kuri sisitemu ebyiri-optique-yinzira mubikoresho byo kugenzura wafer. Yakozwe muri silicon carbide ceramic ikora cyane, igera kuri ultra-yoroheje (density ≈3.1 g / cm³) hamwe no gukomera gukomeye (moderi ya elastique> 400 GPa) ikoresheje igishushanyo mbonera cyoroheje, mugihe hagaragaramo coefficient ultra-low yo kwaguka kwinshi (≈4.5 × 10⁻⁶ / ℃) hamwe nubucucike bukabije (porosity <0.1%), bikagira ubushyuhe bwa nanometrike ≤ 0. Nubunini bwayo bunini (900 × 900mm) hamwe nuburyo budasanzwe bwuzuye, butanga urwego rurerure rwo kwishyiriraho ibiciro bya sisitemu ya optique, bizamura cyane ubugenzuzi bwukuri kandi bwizewe. Irakoreshwa cyane muri metero ya semiconductor, guhuza optique, hamwe na sisitemu yo gufata amashusho neza.
Graphite + Tantalum Carbide Yayoboye Impeta
Impeta ya Graphite + Tantalum Carbide Coated Guide Impeta nikintu gikomeye cyateguwe cyane cyane kuri silicon karbide (SiC) ibikoresho bimwe byo gukura kwa kristu. Igikorwa cyacyo nyamukuru ni ukuyobora neza gazi yubushyuhe bwo hejuru, kwemeza uburinganire nuburinganire bwubushyuhe hamwe nimirima itemba mubyumba byabigenewe. Yakozwe muri grafitike isukuye cyane (isukuye> 99,99%) yashizwemo na CVD yashyizwemo na tantalum karbide (TaC) (igifite umwanda wanduye <5 ppm), irerekana ubushyuhe budasanzwe bwumuriro (≈120 W / m · K) hamwe nubusembure bwimiti mubushyuhe bukabije (kwihanganira ubukana bwa silicon). Igipfundikizo kinini (gutandukana <3%, gukwirakwiza ahantu hose) bituma habaho gazi ihoraho kandi ikanatanga serivisi zigihe kirekire, bikazamura cyane ubwiza numusaruro witerambere rya SiC imwe.
Silicon Carbide (SiC) Furnace Tube Abstract
Silicon Carbide (SiC) Vertical Furnace Tube
Silicon Carbide (SiC) Vertical Furnace Tube ni ikintu gikomeye cyagenewe ibikoresho byo mu nganda zifite ubushyuhe bwo hejuru, cyane cyane nk'umuyoboro wo gukingira hanze kugira ngo ugabanye ubushyuhe bumwe mu itanura munsi y’ikirere, hamwe n'ubushyuhe busanzwe bwa 1200 ° C. Yakozwe hifashishijwe icapiro rya 3D ryinjizwamo ikoranabuhanga, rigaragaza ibintu fatizo byanduye <300 ppm, kandi birashobora guhitamo ibikoresho bya CVD silicon karbide (gutwikira umwanda <5 ppm). Gukomatanya ubushyuhe bwinshi (≈20 W / m · K) hamwe nubushyuhe budasanzwe bwumuriro (kurwanya ubushyuhe bwumuriro> 800 ° C), bukoreshwa cyane mubikorwa byubushyuhe bwo hejuru nko kuvura ubushyuhe bwa semiconductor, gucana ibikoresho bya fotokolta, no gukora ceramique neza, byongera cyane uburinganire bwumuriro hamwe nigihe kirekire cyibikoresho.
Silicon Carbide (SiC) Horizontal Furnace Tube
Carbide ya Silicon (SiC) Horizontal Furnace Tube nikintu cyibanze cyagenewe inzira yubushyuhe bwo hejuru, ikora nk'umuyoboro utunganyirizwa mu kirere urimo umwuka wa ogisijeni (gaze reaction), azote (gaze ikingira), hamwe na chloride hydrogène, hamwe n'ubushyuhe busanzwe bwa dogere 1250 ° C. Yakozwe hifashishijwe icapiro rya 3D ryinjizwamo ikoranabuhanga, rigaragaza ibintu fatizo byanduye <300 ppm, kandi birashobora guhitamo ibikoresho bya CVD silicon karbide (gutwikira umwanda <5 ppm). Gukomatanya ubushyuhe bwinshi (≈20 W / m · K) hamwe nubushyuhe budasanzwe bwumuriro (kurwanya ubushyuhe bwumuriro> 800 ° C), nibyiza gusaba ibyifuzo bya semiconductor nka okiside, ikwirakwizwa, hamwe na firime yoroheje, byemeza uburinganire bwimiterere, isuku yikirere, hamwe nubushyuhe bwigihe kirekire mubihe bikabije.
SiC Ceramic Fork Intwaro Intangiriro
Gukora Semiconductor
Mu gukora semiconductor wafer, SiC ceramic fork amaboko ikoreshwa cyane cyane mu kwimura no gushyira wafer, bikunze kuboneka muri:
- Ibikoresho byo gutunganya Wafer: Nka cassettes ya wafer hamwe nubwato butunganya, bukora neza mubushyuhe bwo hejuru kandi bwangiza ibidukikije.
- Imashini ya Lithographie: Ikoreshwa mubice bisobanutse neza nka etape, kuyobora, hamwe nintwaro za robo, aho ubukana bwazo bukabije hamwe nubushyuhe buke bwumuriro butuma nanometero igenda neza.
- Inzira yo Kuzunguruka no Gutandukanya: Gukora nka trayike ya ICP hamwe nibigize inzira yo gukwirakwiza igice cya kabiri, isuku ryinshi hamwe no kurwanya ruswa birinda kwanduza mubyumba byabigenewe.
Gukoresha Inganda na Robo
SiC ceramic fork intwaro nibintu byingenzi muri robo yinganda zikora cyane nibikoresho byikora:
- Imikorere ya Robo Yanyuma: Ikoreshwa mugukora, guteranya, nibikorwa byuzuye. Imiterere yoroheje (ubucucike ~ 3.21 g / cm³) byongera umuvuduko wa robo no gukora neza, mugihe ubukana bwabo bwinshi (Vickers hardness ~ 2500) butuma imyambarire idasanzwe.
- Imirongo yumusaruro wikora: Mubihe bisaba gukoresha inshuro nyinshi, gukora neza-neza (urugero, ububiko bwa e-ubucuruzi, ububiko bwuruganda), intwaro ya SiC yemeza imikorere yigihe kirekire.
Ikirere n'imbaraga nshya
Mu bidukikije bikabije, intoki za SiC ceramic zikoresha imbaraga zo guhangana nubushyuhe bwo hejuru, kurwanya ruswa, no guhangana nubushyuhe bwumuriro:
- Ikirere: Ikoreshwa mubice byingenzi bigize icyogajuru hamwe na drone, aho imitwaro yoroheje nimbaraga nyinshi zifasha kugabanya ibiro no kuzamura imikorere.
- Ingufu Nshya: Zikoreshwa mubikoresho bitanga umusaruro mu nganda zifotora (urugero, itanura rya diffuzione) kandi nkibice byubatswe neza mubikorwa bya batiri ya lithium-ion.
Gutunganya inganda-Ubushyuhe bwo hejuru
Amaboko ya ceramic ceramic arashobora kwihanganira ubushyuhe burenga 1600 ° C, bigatuma bukwiranye:
- Metallurgie, Ceramics, na Glass Industries: Ikoreshwa muri manipulators yubushyuhe bwo hejuru, amasahani yo gushiraho, hamwe nisahani.
- Ingufu za kirimbuzi: Bitewe n’imirasire y’imirasire, zirakwiriye kubice bimwe na bimwe mumashanyarazi ya kirimbuzi.
Ibikoresho byo kwa muganga
Mu rwego rwubuvuzi, amaboko ya SiC ceramic yamashanyarazi akoreshwa cyane cyane:
- Imashini za robo nubuvuzi bwa Surgical: Zihabwa agaciro kubinyabuzima bihuza, kurwanya ruswa, hamwe no guhagarara neza mubidukikije.
Incamake ya SiC
| Imiterere isanzwe | Ibice | Indangagaciro |
| Imiterere |
| FCC β icyiciro |
| Icyerekezo | Igice (%) | 111 byatoranijwe |
| Ubucucike bwinshi | g / cm³ | 3.21 |
| Gukomera | Vickers gukomera | 2500 |
| Ubushyuhe | J · kg-1 · K-1 | 640 |
| Kwiyongera k'ubushyuhe 100-600 ° C (212–1112 ° F) | 10-6K-1 | 4.5 |
| Umusore Modulus | Gpa (4pt yunamye, 1300 ℃) | 430 |
| Ingano y'ibinyampeke | μm | 2 ~ 10 |
| Ubushyuhe bwo hejuru | ℃ | 2700 |
| Imbaraga zidasanzwe | MPa (RT-amanota 4) | 415 |
| Amashanyarazi | (W / mK) | 300 |
Silicon Carbide Ceramic Ibice Byubatswe
Silicon carbide ceramic ibice byubatswe biboneka mubice bya silicon karbide bihujwe hamwe no gucumura. Zikoreshwa cyane mu binyabiziga, imashini, imashini, imiti, igice cya kabiri, ikoranabuhanga mu kirere, imashanyarazi, n’ingufu, bigira uruhare runini mubikorwa bitandukanye muri izo nganda. Bitewe nuburyo budasanzwe, ibice bya silicon karbide ceramic byubatswe byahindutse ibikoresho byiza mubihe bibi birimo ubushyuhe bwinshi, umuvuduko mwinshi, kwangirika, no kwambara, bitanga imikorere yizewe no kuramba mubikorwa bigoye.Ikirangantego cya SiC
Ikidodo cya SiC ni amahitamo meza kubidukikije bikaze (nkubushyuhe bwo hejuru, umuvuduko mwinshi, itangazamakuru ryangirika, hamwe no kwambara byihuse) kubera ubukana budasanzwe, kwihanganira kwambara, kurwanya ubushyuhe bwinshi (kwihanganira ubushyuhe bugera kuri 1600 ° C cyangwa na 2000 ° C), hamwe no kurwanya ruswa. Ubushuhe bwinshi bwumuriro bworohereza gukwirakwiza neza ubushyuhe, mugihe coefficient de coiffure nkeya hamwe no kwisiga ubwabyo bikomeza gushimangira kwizerwa hamwe nigihe kirekire cyumurimo mugihe gikabije. Ibi biranga bituma kashe ya SiC ikoreshwa cyane mu nganda nka peteroli, ubucukuzi bw'amabuye y'agaciro, inganda zikoresha igice cya kabiri, gutunganya amazi y’amazi, n’ingufu, kugabanya cyane amafaranga yo kubungabunga, kugabanya igihe cyo gukora, no kuzamura ibikoresho bikora neza n’umutekano.
Amashanyarazi ya SiC Ceramic
Amashanyarazi ya Silicon Carbide (SiC) azwi cyane kubera ubukana budasanzwe (ubukana bwa Mohs bugera kuri 9.5, ubwa kabiri nyuma ya diyama), ubwinshi bw’amashyanyarazi (burenze kure cyane ububumbyi bwogukoresha neza ubushyuhe), hamwe nubushakashatsi budasanzwe bwimiti hamwe nubushyuhe bukabije bwumuriro (hamwe na acide ikomeye, alkalis, nihindagurika ryubushyuhe bwihuse). Iyi mitungo ituma imiterere itajegajega hamwe nibikorwa byizewe mubidukikije bikabije (urugero, ubushyuhe bwo hejuru, abrasion, na ruswa), mugihe byongera ubuzima bwa serivisi no kugabanya ibikenerwa byo kubungabunga.
Isahani ya ceramic yamashanyarazi ikoreshwa cyane murwego rwo hejuru:
• Ibikoresho byo gusya hamwe no gusya: Gukoresha imbaraga zikomeye cyane zo gukora ibiziga byo gusya hamwe nibikoresho byo gusya, byongera neza kandi biramba mubidukikije.
• Ibikoresho byo kuvunika: Gukora nk'itanura n'ibikoresho byo mu itanura, gukomeza umutekano hejuru ya 1600 ° C kugirango bizamure neza ubushyuhe no kugabanya amafaranga yo kubungabunga.
Inganda za Semiconductor: Gukora nka substrate kubikoresho bya elegitoroniki bifite ingufu nyinshi (urugero, diode yingufu na RF amplifier), gushyigikira ibikorwa byumuvuduko mwinshi hamwe nubushyuhe bwo hejuru kugirango bizamure kwizerwa no gukoresha ingufu.
• Gutera no gushonga: Gusimbuza ibikoresho gakondo mugutunganya ibyuma kugirango habeho guhererekanya neza ubushyuhe no kurwanya ruswa, kongera ubwiza bwa metallurgie no gukoresha neza.
Ubwato bwa SiC Wafer
Ubwato bwa XKH SiC butanga ubushyuhe buhebuje bwumuriro, ubudahangarwa bwimiti, ubwubatsi bwuzuye, hamwe nubukungu bukora neza, butanga igisubizo cyiza cyane cyubwikorezi bwo gukora semiconductor. Zitezimbere cyane umutekano wogukoresha umutekano, isuku, hamwe nubushobozi bwo gukora, bigatuma ibice byingenzi muguhimba wafer.
Ubwato bwa ceramic SiC Porogaramu:
Ubwato bwa ceramic SiC bukoreshwa cyane mubikorwa byimbere-byanyuma, harimo:
• Uburyo bwo kubitsa: nka LPCVD (Umuvuduko muke wa chimique Vapor Deposition) na PECVD (Plasma-Enhanced Chemical Vapor Deposition).
• Ubuvuzi Bwinshi Bwinshi: Harimo okiside yumuriro, annealing, diffusion, hamwe no gutera ion.
• Uburyo butose & Gusukura: Inzira yo gusukura no gufata imiti.
Bihujwe nibidukikije hamwe na vacuum inzira ibidukikije,
nibyiza kuri fabs ishaka kugabanya ingaruka zanduye no kuzamura umusaruro.
Ibipimo by'ubwato bwa SiC Wafer:
| Ibyiza bya tekiniki | ||||
| Ironderero | Igice | Agaciro | ||
| Izina ryibikoresho | Igisubizo Cyacuzwe na Silicon Carbide | Carbide ya Silicon idafite imbaraga | Carbide yongeye gushyirwaho | |
| Ibigize | RBSiC | SSiC | R-SiC | |
| Ubucucike bwinshi | g / cm3 | 3 | 3.15 ± 0.03 | 2.60-2.70 |
| Imbaraga zoroshye | MPa (kpsi) | 338 (49) | 380 (55) | 80-90 (20 ° C) 90-100 (1400 ° C) |
| Imbaraga zo guhonyora | MPa (kpsi) | 1120 (158) | 3970 (560) | > 600 |
| Gukomera | Knoop | 2700 | 2800 | / |
| Gucika intege | MPa m1 / 2 | 4.5 | 4 | / |
| Amashanyarazi | W / mk | 95 | 120 | 23 |
| Coefficient yo Kwagura Ubushyuhe | 10-6.1 / ° C. | 5 | 4 | 4.7 |
| Ubushyuhe bwihariye | Joule / g 0k | 0.8 | 0.67 | / |
| Ubushyuhe bwinshi mu kirere | ℃ | 1200 | 1500 | 1600 |
| Modulus | Gpa | 360 | 410 | 240 |
SiC Ceramics Ibice bitandukanye byabigenewe Kugaragaza
SiC Ceramic Membrane
SiC ceramic membrane nigisubizo cyambere cyo kuyungurura ikozwe muri karbide nziza ya silicon, igaragaramo imiterere ikomeye yibice bitatu (igishyigikirwa, urwego rwinzibacyuho, hamwe na membrane itandukanya) ikozwe muburyo bwo gucumura ubushyuhe bwinshi. Igishushanyo cyerekana imbaraga zidasanzwe zubukanishi, ingano nini ya pore ikwirakwizwa, hamwe nigihe kirekire. Iratangaje mubikorwa bitandukanye byinganda mugutandukanya neza, kwibanda, no kweza amazi. Ikoreshwa ryingenzi ririmo gutunganya amazi n’amazi mabi (kuvanaho ibintu byahagaritswe, bagiteri, n’imyanda ihumanya), gutunganya ibiryo n’ibinyobwa (gusobanura no kwibanda ku mutobe, amata, n’amazi asembuye), ibikorwa bya farumasi n’ibinyabuzima (kweza biofluide n’umuhuza), gutunganya imiti (gushungura amazi yangiza na catalizator), hamwe no gukoresha amavuta na gaze (kuvura amazi yanduye no kwanduza).
Imiyoboro ya SiC
Imiyoboro ya SiC (silicon carbide) ni ibikoresho bya ceramic bikora cyane bigenewe sisitemu yo mu itanura ya semiconductor, ikozwe muri karbide nziza cyane ya silicon karbide ikoresheje tekinoroji yo gucumura. Berekana ubushyuhe budasanzwe, ubushyuhe bwo hejuru (kwihanganira hejuru ya 1600 ° C), hamwe no kurwanya ruswa. Ubushobozi buke bwo kwagura amashyanyarazi hamwe nimbaraga nyinshi zubukanishi butuma habaho ituze ryikigereranyo cyumuriro ukabije, bikagabanya neza ihindagurika ryumuriro no kwambara. Imiyoboro ya SiC ikwiranye n’itanura rya diffuzione, itanura rya okiside, hamwe na sisitemu ya LPCVD / PECVD, bigafasha gukwirakwiza ubushyuhe bumwe hamwe nuburyo butajegajega kugirango hagabanuke inenge za wafer no kunoza uburinganire bwa firime. Byongeye kandi, imiterere yuzuye, idahwitse hamwe nubusembure bwa chimique ya SiC irwanya isuri ituruka kumyuka ya gaze nka ogisijeni, hydrogène, na amoniya, ikongerera igihe cyumurimo kandi ikagira isuku yibikorwa. Imiyoboro ya SiC irashobora guhindurwa mubunini no mubyimbye byurukuta, hamwe nogukora neza bigera hejuru yimbere yimbere hamwe no kwibanda cyane kugirango dushyigikire laminari hamwe nubushuhe buringaniye. Amahitamo yohanagura cyangwa gutwikisha ibintu birushijeho kugabanya kubyara ibice no kongera imbaraga zo kurwanya ruswa, byujuje ibyangombwa bisabwa byogukora igice cya semiconductor kugirango bisobanuke neza kandi byizewe.
SiC Ceramic Cantilever Paddle
Igishushanyo cya monolithic cyibikoresho bya SiC cantilever cyongera cyane imbaraga zumukanishi hamwe nubushyuhe bwumuriro mugihe gikuraho ingingo ningingo zidakunze kugaragara mubikoresho byinshi. Ubuso bwabo bwuzuye neza kugeza hafi-indorerwamo irangiye, bigabanya kubyara uduce duto kandi byujuje ubuziranenge bwisuku. Imiti idasanzwe ya chimique ya SiC irinda gusohora, kwangirika, no kwanduza ibintu ahantu hatagaragara (urugero, ogisijeni, umwuka), byemeza ko bihamye kandi byizewe muburyo bwo gukwirakwiza / okiside. Nubwo gusiganwa ku magare byihuse, SiC ikomeza uburinganire bwimiterere, ikongerera igihe cya serivisi kandi igabanya igihe cyo kubungabunga. Imiterere yoroheje ya SiC ituma ubushyuhe bwihuse bwihuta, kwihutisha ubushyuhe / gukonjesha no kuzamura umusaruro ningufu zingufu. Ibyo byuma biraboneka mubunini bushobora guhindurwa (bihujwe na 100mm kugeza 300mm + wafer) kandi bigahuza n'ibishushanyo mbonera by'itanura, bitanga imikorere ihamye haba imbere-impera ninyuma yinyuma.
Alumina Vacuum Chuck Intangiriro
Al₂O₃ vacuum chucks nibikoresho byingenzi mubikorwa bya semiconductor, bitanga inkunga ihamye kandi yuzuye mubikorwa byinshi:• Kunanuka: Tanga inkunga imwe mugihe cyo kunanura wafer, ukagabanya kugabanuka kwinshi kwa substrate kugirango wongere ubushyuhe bwa chip no gukora ibikoresho.
• Kwishushanya: Itanga adsorption itekanye mugihe cyo gushushanya wafer, kugabanya ingaruka zangirika no kugabanya kugabanuka kumashanyarazi.
• Isuku: Ubuso bwayo bworoshye, bumwe bwa adsorption butuma ikuraho neza umwanda utangiza ibyangiritse mugihe cyo gukora isuku.
• Gutwara abantu: Gutanga inkunga yizewe kandi itekanye mugihe cyo gufata no gutwara, kugabanya ingaruka zo kwangirika no kwanduzwa.
1.Ikoranabuhanga rya Micro-Porous Ceramic Technology
• Koresha nano-ifu kugirango ikore neza kandi igabanijwe hamwe, bivamo ubukana bwinshi hamwe nuburyo bwuzuye kugirango ubone inkunga ya wafer ihamye kandi yizewe.
2.Ibikoresho bidasanzwe
-Byakozwe muri ultra-yera 99,99% alumina (Al₂O₃), irerekana:
• Ibyiza bya Thermal: Kurwanya ubushyuhe bwinshi hamwe nubushuhe buhebuje bwumuriro, bikwiranye nubushyuhe bwo hejuru bwa semiconductor ibidukikije.
• Ibikoresho bya mashini: Imbaraga nyinshi nubukomezi byemeza kuramba, kwambara, no kuramba.
• Inyungu zinyongera: Gukwirakwiza amashanyarazi menshi no kurwanya ruswa, bihujwe nuburyo butandukanye bwo gukora.
3. Uburinganire buhebuje no kubangikanya• Iremeza neza ko wafer ikora neza kandi ihamye hamwe nuburinganire buringaniye hamwe nuburinganire, kugabanya ingaruka zibyangiritse no kwemeza ibisubizo bihoraho. Umwuka mwiza wacyo hamwe nimbaraga za adsorption imbaraga zongera imbaraga mubikorwa.
Al₂O₃ vacuum chuck ihuza ikoranabuhanga rigezweho rya tekinoroji, ibintu bidasanzwe, hamwe nibisobanuro bihanitse kugirango bishyigikire inzira ya semiconductor ikomeye, byemeza neza, kwiringirwa, no kurwanya umwanda murwego rwo kunanuka, gushushanya, gusukura, no gutwara ibintu.
Imashini ya robot ya Alumina & Alumina Ceramic Iherezo Ryiza Ingaruka
Alumina (Al₂O₃) amaboko ya robot ceramic nibikoresho byingenzi mugukoresha wafer mugukora semiconductor. Bahita bahura na wafer kandi bashinzwe kwimura neza no guhagarara mubidukikije bisabwa nka vacuum cyangwa ubushyuhe bwo hejuru. Agaciro kabo kibanze ni mukurinda umutekano wafer, gukumira umwanda, no kunoza imikorere yimikorere no gutanga umusaruro binyuze mubintu bidasanzwe.
| Ikigereranyo | Ibisobanuro birambuye |
| Ibikoresho bya mashini | Alumina-isukuye cyane (urugero,> 99%) itanga ubukana bwinshi (ubukana bwa Mohs bugera kuri 9) n'imbaraga zoroshye (kugeza kuri MPa 250-500), bikarinda kwambara no kwirinda guhindura ibintu, bityo bikongerera igihe cya serivisi.
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| Amashanyarazi | Ubushyuhe bwo mucyumba bugera kuri 10¹⁵ Ω · cm hamwe nimbaraga zo gukingira za 15 kV / mm birinda neza gusohora amashanyarazi (ESD), birinda waferi yoroheje kutabangamira amashanyarazi no kwangirika.
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| Ubushyuhe bwumuriro | Gushonga ingingo igera kuri 2050 ° C ituma ishobora guhangana nubushyuhe bwo hejuru (urugero, RTA, CVD) mubikorwa bya semiconductor. Coefficient yo kwagura ubushyuhe buke igabanya ubukana kandi ikagumya guhagarara neza mubushyuhe.
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| Ubusembwa bwa Shimi | Shyiramo aside nyinshi, alkalis, imyuka itunganya, hamwe nisuku, birinda kwanduza uduce cyangwa kurekura ibyuma. Ibi bituma ibidukikije byera cyane kandi birinda umwanda.
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| Izindi nyungu | Tekinoroji yo gutunganya ikuze itanga ikiguzi-cyiza cyane; Ubuso bushobora kuba busobanutse neza kugeza hasi, bikagabanya ingaruka ziterwa ningaruka.
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Alumina ceramic robotic amaboko akoreshwa cyane cyane mubikorwa byo gukora igice cya mbere cyanyuma, harimo:
• Gukoresha Wafer no Guhagarara: Kwimura neza kandi neza na waferi yumwanya (urugero, 100mm kugeza 300mm + ingano) mumyuka ya gazi ya vacuum cyangwa isuku nyinshi, kugabanya ibyangiritse nibitera kwanduza.
• Inzira Yubushyuhe Bwinshi: Nka Annealing yihuta yubushyuhe (RTA), kubika imyuka ya chimique (CVD), hamwe na plasma etching, aho bikomeza umutekano muke mubushyuhe bwinshi, bigatuma gahunda ihoraho kandi itanga umusaruro.
• Sisitemu yimikorere ya Wafer ikoreshwa: Yinjijwe muri robo ikora wafer nkibikorwa byanyuma kugirango ihindure ihererekanyabubasha hagati yibikoresho, bizamura umusaruro.
Umwanzuro
X. Twubahiriza inganda zuzuye, kugenzura ubuziranenge, no guhanga udushya mu ikoranabuhanga, dukoresha uburyo bwo gucumura buhanitse (urugero, gucumura ku gahato, gucumura neza) hamwe nubuhanga bwo gutunganya neza (urugero, gusya CNC, gusya) kugirango tumenye ubushyuhe budasanzwe bwo hejuru, imbaraga za mashini, ubudahangarwa bw’imiti, hamwe n’uburinganire bwuzuye. Dushyigikiye kwihitiramo gushingiye ku bishushanyo, dutanga ibisubizo byateganijwe kubipimo, imiterere, kurangiza hejuru, hamwe n amanota yibikoresho kugirango twuzuze ibyifuzo byabakiriya. Twiyemeje gutanga ibikoresho byizewe kandi byubaka bya ceramic kubikorwa byo murwego rwohejuru ku isi, kuzamura ibikoresho no gukora neza kubakiriya bacu.
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