Safiro ni kristu imwe ya alumina, igize sisitemu ya kristu ya gatatu, imiterere yayo ya hexagonal, imiterere yayo ya kristu igizwe na atome eshatu za ogisijeni na atome ebyiri za aluminiyumu mu bwoko bwa covalent bond, zitondetse neza cyane, zifite umunyururu ukomeye wo gufatanya n'ingufu za lattice, mu gihe imbere muri kristu nta mwanda cyangwa inenge, bityo ifite ubushyuhe bwiza bwo gukingira amashanyarazi, ubwisanzure, ubwikorezi bwiza bw'ubushyuhe n'imiterere ikomeye yo gukomera. Ikoreshwa cyane nk'idirishya ry'urumuri n'ibikoresho bya substrate bikora neza cyane. Ariko, imiterere ya molekile ya safiro iragoye kandi hari anisotropy, kandi ingaruka ku miterere ijyanye nayo nayo itandukanye cyane mu gutunganya no gukoresha icyerekezo gitandukanye cya kristu, bityo ikoreshwa naryo riratandukanye. Muri rusange, substrate za safiro ziboneka mu cyerekezo cya C, R, A na M.
Ishyirwa mu bikorwa ryaC-plane safiro wafer
Gallium nitride (GaN) nk'igice kinini cya semiconductor cy'ikinyejana cya gatatu cy'umurambararo, ifite icyuho kinini cy'umurambararo, ifata neza atome, itwara ubushyuhe bwinshi, ihamye neza ya shimi (hafi yangiritse na aside iyo ari yo yose) n'ubushobozi bukomeye bwo kurwanya imirasire, kandi ifite amahirwe menshi mu ikoreshwa rya optoelectronics, ibikoresho by'ubushyuhe bwinshi n'ingufu hamwe n'ibikoresho bya mikoroonde bikunze gushonga cyane. Ariko, bitewe n'aho GaN ishongesha cyane, biragoye kubona ibikoresho binini bya kristu imwe, bityo uburyo busanzwe ni ugukura heteroepitaxy ku bindi bikoresho, bifite ibisabwa byinshi ku bikoresho bya substrate.
Ugereranije naubutaka bwa safirohamwe n'izindi sura za kristu, igipimo cy'ubudahuye bw'urukiramende hagati ya C-plane (<0001> orientation) safiro wafer na firime zishyizwe mu matsinda Ⅲ-Ⅴ na Ⅱ-Ⅵ (nka GaN) ni gito, kandi igipimo cy'ubudahuye bw'urukiramende hagati ya byombi naFilime za AlNishobora gukoreshwa nk'urwego rw'ubutabazi ni ntoya kurushaho, kandi yujuje ibisabwa kugira ngo ubushyuhe bwinshi bukomeze kwiyongera mu buryo bwa GaN crystallization. Kubwibyo, ni ibikoresho bisanzwe byo gukura kwa GaN, bishobora gukoreshwa mu gukora ibyuma by'umweru/ubururu/icyatsi, diode za laser, infrared detectors n'ibindi.
Ni ngombwa kuvuga ko filime ya GaN ikurira kuri substrate ya safiro ya C-plane ikura ku murongo wayo wa polar, ni ukuvuga icyerekezo cya C-axis, atari gusa inzira yo gukura no gukura mu buryo bwa epitaxy, igiciro gito, imiterere ihamye n'imiti, ahubwo inanoza imikorere. Atome za wafer ya safiro ishingiye kuri C zifatanye mu buryo bwa O-al-al-o-al-O, mu gihe kristu za safiro zishingiye kuri M na A zifatanye muri al-O-al-O. Kubera ko Al-Al ifite imbaraga nke zo guhuza no guhuza nke kurusha Al-O, ugereranije na kristu za safiro zishingiye kuri M na A, gutunganya C-saphire ahanini ni ugufungura urufunguzo rwa Al-Al, rworoshye gutunganya, kandi rushobora kubona ubwiza bwo hejuru bw'ubuso, hanyuma rukagira ubwiza bwiza bwa gallium nitride epitaxial, bushobora kunoza ubwiza bwa LED yera/ubururu burabagirana cyane. Ku rundi ruhande, filime zakuriye ku murongo wa C-axis zigira ingaruka zo gutandukanya amashanyarazi mu buryo bwikora ndetse no mu buryo bwa piezoelectric, bigatuma habaho ingufu zikomeye z'amashanyarazi imbere muri filime (active layer quantum Wells), ibyo bigatuma imikorere y'urumuri ya filime za GaN igabanuka cyane.
Agatambaro ka safiro gafite ibara rya A-planeubusabe
Kubera imikorere yayo myiza cyane, cyane cyane uburyo bwo kohereza ibintu neza, kristu imwe ya safiro ishobora kongera ingaruka zo kwinjira mu idirishya rya infrared, ikaba ibikoresho byiza byo mu idirishya rya infrared, byakoreshejwe cyane mu bikoresho bya gisirikare by’amashanyarazi. Aho safiro ari indege y’umurambararo (indege ya C) mu cyerekezo gisanzwe cy’isura, ni ubuso butari ubw’umurambararo. Muri rusange, ubwiza bwa safiro ishingiye kuri A buruta ubwa kristu ishingiye kuri C, ifite aho ihurira hato, imiterere ya Mosaic mike n’imiterere yuzuye ya kristu, bityo ikaba ifite imikorere myiza yo kohereza urumuri. Muri icyo gihe, bitewe n’uburyo bwo guhuza atome bwa Al-O-Al-O ku ndege ya a, ubukana n’ubudahangarwa bwa safiro ishingiye kuri A buri hejuru cyane kuruta iya safiro ishingiye kuri C. Kubwibyo, utubumbe twa A dukoreshwa cyane nk'ibikoresho by'idirishya; Byongeye kandi, A safiro ifite ubushobozi bwo gufunga neza kandi ifite ubushobozi bwo gufunga neza, bityo ishobora gukoreshwa mu ikoranabuhanga rya microelectronics, ariko kandi no mu gukura kw'ibyuma bitanga ingufu nziza, nko gukoresha TlBaCaCuO (TbBaCaCuO), Tl-2212, gukura kwa filimi zitandukanye za epitaxial superconducting kuri cerium oxide (CeO2) safiro composite substrate. Ariko kandi, kubera ingufu nyinshi za Al-O, biragoye kuyitunganya.
Ishyirwa mu bikorwa ryaR / M plane safiro wafer
Igishushanyo cya R-plane ni ubuso butari polari bwa safiro, bityo guhinduka k'umwanya wa R-plane mu gikoresho cya safiro bigiha imiterere itandukanye ya mekanike, ubushyuhe, amashanyarazi, n'iy'urumuri. Muri rusange, substrate ya safiro ya R-surface ikundwa cyane mu gushyira silikoni mu buryo bwa heteroepitaxial, cyane cyane mu bikorwa bya semiconductor, microwave na microelectronics integrated circuit, mu gukora icyuma cy'ubutare, ibindi bice bifasha mu gutwara ibintu, resistor zikomeye, gallium arsenide nayo ishobora gukoreshwa mu gukura kwa substrate yo mu bwoko bwa R. Kuri ubu, bitewe n'uko telefoni zigezweho na sisitemu za mudasobwa za tableti zikunzwe, substrate ya safiro ya R-face yasimbuye ibikoresho bya SAW bisanzwe bikoreshwa kuri telefoni zigezweho na mudasobwa za tableti, itanga substrate ku bikoresho bishobora kunoza imikorere.
Niba hari icyaha, hamagara usiba
Igihe cyo kohereza: Nyakanga-16-2024