Hariho kandi itandukaniro mugushira mu bikorwa wa wafiro ya safiro ifite icyerekezo gitandukanye?

Safiro ni kristu imwe ya alumina, ni iy'ibice bitatu bya sisitemu ya kirisiti, imiterere ya mpande esheshatu, imiterere yayo ya kirisiti igizwe na atome eshatu za ogisijeni na atome ebyiri za aluminiyumu mu bwoko bwa covalent bond, itunganijwe neza cyane, ifite urunigi rukomeye hamwe n’ingufu za lattice, mu gihe imbere ya kirisiti yacyo hafi ya yose idafite umwanda cyangwa inenge, bityo ikaba ifite imiterere myiza y’amashanyarazi, mu mucyo, n’ubushyuhe bukabije bw’umuriro. Byakoreshejwe cyane nka idirishya rya optique hamwe nibikoresho byo hejuru byububiko. Nyamara, imiterere ya molekuline ya safiro iragoye kandi hariho anisotropy, kandi ingaruka kumiterere yumubiri ihuye nayo iratandukanye cyane mugutunganya no gukoresha ibyerekezo bitandukanye bya kristu, kubwibyo gukoresha nabyo biratandukanye. Muri rusange, amabuye ya safiro araboneka mu cyerekezo cy'indege C, R, A na M.

Porogaramu yaC-indege ya safiro wafer

Nitride ya Gallium (GaN) nk'umugozi mugari wa gatatu wa semiconductor, ifite intera nini itaziguye, umurongo wa atome ukomeye, imiyoboro ihanitse yumuriro, itekanye neza ya chimique (hafi ya yose itabangamiwe na acide iyo ari yo yose) hamwe nubushobozi bukomeye bwo kurwanya imirasire, kandi ifite ibyiringiro byinshi mugukoresha optoelectronics, ubushyuhe bwinshi nibikoresho bikoresha ingufu za microwave. Ariko, kubera gushonga kwinshi kwa GaN, biragoye kubona ibikoresho binini binini bya kristu, bityo inzira rusange ni ugukora imikurire ya heteroepitaxy kubindi bikoresho, bifite ibisabwa cyane kubikoresho byubutaka.

Ugereranije nasafirohamwe nandi masura ya kristu, igipimo gihoraho kidahuye hagati ya C-indege (<0001> icyerekezo) safiro wafer na firime zashyizwe mumatsinda Ⅲ-Ⅴ na Ⅱ-Ⅵ (nka GaN) ni ntoya, kandi igipimo gihoraho kidahuye hagati yabiri na bombiFilime ya AlNibyo birashobora gukoreshwa nka buffer layer ni ntoya, kandi yujuje ibyangombwa byo guhangana nubushyuhe bwo hejuru murwego rwo korohereza GaN. Kubwibyo, ni ibintu bisanzwe byifashishwa mu gukura kwa GaN, bishobora gukoreshwa mugukora umweru / ubururu / icyatsi kibisi, diode ya laser, disiketi ya infragre nibindi.

Twabibutsa ko firime ya GaN ikura kuri substrate ya C-indege ya safiro ikura ikikije umurongo wa polar, ni ukuvuga icyerekezo cya C-axis, ntabwo ari inzira yo gukura gusa hamwe na epitaxy, gusa ugereranije nigiciro gito, imiterere ihamye yumubiri na chimique, ariko kandi ikora neza. Atome ya C-yerekanwe na safiro wafer ihujwe na gahunda ya O-al-al-o-al-O, mugihe M- na A-yerekanwe na kristu ya safiro ihujwe na al-O-al-O. Kubera ko Al-Al ifite imbaraga zo guhuza hamwe no guhuza intege nke ugereranije na Al-O, ugereranije na M-yerekanwe na A-yerekanwe na kirisita ya safiro, Gutunganya C-safiro ahanini ni ugukingura urufunguzo rwa Al-Al, byoroshye gutunganya, kandi rushobora kubona ubuziranenge bwo hejuru, hanyuma rukabona ubwiza bwa gallium nitride epitaxial nziza, ishobora kuzamura ubwiza bwa ultra-LED yubururu bwera. Ku rundi ruhande, firime zikura kuri C-axis zigira ingaruka zidasanzwe kandi za piezoelectric polarisation, bikavamo umurima w'amashanyarazi w'imbere imbere muri firime (active layer quantum Wells), bigabanya cyane imikorere ya firime ya GaN.

A-indege ya safiro waferPorogaramu

Kubera imikorere myiza yuzuye, cyane cyane itumanaho ryiza cyane, safiro imwe ya kirisiti irashobora kongera imbaraga zo kwinjira muri infragre, kandi igahinduka ibikoresho byiza byamadirishya yo hagati, byakoreshejwe cyane mubikoresho byamashanyarazi. Aho safiro ni indege ya polar (C indege) muburyo busanzwe bwo mumaso, ni ubuso butari inkingi. Mubisanzwe, ubwiza bwa A-yerekanwe na safiro ya kirisiti iruta iya C-yerekanwe kristu, hamwe na dislokisiyo nkeya, imiterere ya Mosaic hamwe nuburyo bwuzuye bwa kirisiti, bityo ikagira imikorere myiza yo kohereza urumuri. Muri icyo gihe, bitewe na Al-O-Al-O atomike ihuza indege mu ndege a, ubukana no kwambara birwanya A-safiro irarenze cyane ugereranije na C. Kubwibyo, A-icyerekezo gikoreshwa cyane nkibikoresho byidirishya; Byongeye kandi, safiro ifite kandi imiterere ya dielectric ihoraho kandi ikingira cyane, bityo rero irashobora gukoreshwa muburyo bwa tekinoroji ya mikorobe ya elegitoroniki, ariko kandi no gukura kw'imiyoboro ihebuje, nko gukoresha TlBaCaCuO (TbBaCaCuO), Tl-2212, ikura rya epitoxial superconducting firime ya Ceerum2. Ariko, nanone kubera ingufu nini za Al-O, biragoye gutunganya.

Gushyira mu bikorwaR / M indege ya safiro wafer

Indege ya R-ni ubuso butari inkingi ya safiro, bityo rero guhinduka kumwanya wa R-indege mubikoresho bya safiro birayiha imiterere itandukanye yubukanishi, ubushyuhe, amashanyarazi, na optique. Muri rusange, R-ubuso bwa safiro substrate ikundwa kubutaka bwa heteroepitaxial ya silicon, cyane cyane kuri semiconductor, microwave na microelectronics ihuriweho na sisitemu yumuzunguruko, mugukora amasasu, ibindi bintu birenze urugero, birwanya imbaraga nyinshi, gallium arsenide nayo irashobora gukoreshwa muburyo bwo gukura kwa R. Kugeza ubu, hamwe na terefone zikoresha ubwenge hamwe na sisitemu ya mudasobwa ya tablet, R-face sapphire substrate yasimbuye ibikoresho bya SAW byari bisanzwe bikoreshwa kuri terefone zifite ubwenge na mudasobwa ya tablet, bitanga substrate y'ibikoresho bishobora kuzamura imikorere.

Niba hari ihohoterwa, hamagara gusiba