Hariho kandi itandukaniro mugushira mu bikorwa wa wafiro ya safiro ifite icyerekezo gitandukanye?

Safiro ni kristu imwe ya alumina, ni iy'ibice bitatu bya sisitemu ya kirisiti, imiterere ya mpande esheshatu, imiterere yayo ya kirisiti igizwe na atome eshatu za ogisijeni na atome ebyiri za aluminiyumu mu bwoko bwa covalent bond, zitunganijwe cyane, zifite urunigi rukomeye n'imbaraga za lattice, mu gihe imbere imbere ya kirisiti hafi ya yose nta mwanda cyangwa inenge, bityo ifite amashanyarazi meza cyane, gukorera mu mucyo, ubushyuhe bwiza bwumuriro nibiranga ubukana bukabije. Byakoreshejwe cyane nka idirishya rya optique hamwe nibikoresho byo hejuru byububiko. Nyamara, imiterere ya molekuline ya safiro iragoye kandi hariho anisotropy, kandi ingaruka kumiterere yumubiri ihuye nayo iratandukanye cyane mugutunganya no gukoresha ibyerekezo bitandukanye bya kristu, kubwibyo gukoresha nabyo biratandukanye. Muri rusange, amabuye ya safiro araboneka mu cyerekezo cy'indege C, R, A na M.

Porogaramu yaC-indege ya safiro wafer

Nitride ya Gallium (GaN) nkumugozi mugari wa gatatu wa semiconductor, ifite icyuho kinini cyumurongo, umurongo wa atome ukomeye, imiyoboro ihanitse yumuriro, imiterere myiza yimiti (hafi ya koroside na acide iyo ari yo yose) hamwe nubushobozi bukomeye bwo kurwanya imirasire, kandi ifite ibyiringiro byinshi muri ikoreshwa rya optoelectronics, ubushyuhe bwinshi nibikoresho byamashanyarazi hamwe nibikoresho bya microwave yumurongo mwinshi. Ariko, kubera gushonga kwinshi kwa GaN, biragoye kubona ibikoresho binini binini bya kristu, bityo inzira rusange ni ugukora imikurire ya heteroepitaxy kubindi bikoresho, bifite ibisabwa cyane kubikoresho byubutaka.

Ugereranije nasafirohamwe nandi masura ya kristu, igipimo gihoraho kidahuye hagati yindege ya C-indege (<0001> icyerekezo) safiro wafer na firime zashyizwe mumatsinda Ⅲ-Ⅴ na Ⅱ-Ⅵ (nka GaN) ni ntoya, kandi na lattice ihora idahuye igipimo hagati yabiri naFilime ya AlNibyo birashobora gukoreshwa nka buffer layer ni ntoya, kandi yujuje ibyangombwa byo guhangana nubushyuhe bwo hejuru murwego rwo korohereza GaN. Kubwibyo, ni ibintu bisanzwe byifashishwa mu gukura kwa GaN, bishobora gukoreshwa mugukora umweru / ubururu / icyatsi kibisi, diode ya laser, disiketi ya infragre nibindi.

Twabibutsa ko firime ya GaN ikura kuri C-indege ya safiro ikura ikura kumurongo wa polar, ni ukuvuga icyerekezo cya C-axis, ntabwo ari inzira yo gukura gusa hamwe na epitaxy, ugereranije nigiciro gito, gihamye kumubiri n'imiti ya chimique, ariko kandi imikorere myiza yo gutunganya. Atome ya C-yerekanwe na safiro wafer ihujwe na gahunda ya O-al-al-o-al-O, mugihe M- na A-yerekanwe na kristu ya safiro ihujwe na al-O-al-O. Kuberako Al-Al ifite imbaraga zo guhuza imbaraga hamwe no guhuza intege nke ugereranije na Al-O, ugereranije na M-na M-na A-yerekanwe na kristu ya safiro, Gutunganya C-safiro ahanini ni ugukingura urufunguzo rwa Al-Al, byoroshye gutunganya , kandi irashobora kubona ubuziranenge bwo hejuru, hanyuma ukabona ubwiza bwa gallium nitride epitaxial nziza, ishobora kuzamura ubwiza bwa ultra-high brightness yera / ubururu LED. Ku rundi ruhande, firime zikura kuri C-axis zigira ingaruka zidasanzwe kandi za piezoelectric polarisation, bikavamo umurima w'amashanyarazi w'imbere imbere muri firime (active layer quantum Wells), bigabanya cyane imikorere ya firime ya GaN.

A-indege ya safiro waferPorogaramu

Kubera imikorere myiza yuzuye, cyane cyane itumanaho ryiza cyane, safiro imwe ya kirisiti irashobora kongera imbaraga zo kwinjira muri infragre, kandi igahinduka ibikoresho byiza byamadirishya yo hagati, byakoreshejwe cyane mubikoresho byamashanyarazi. Aho safiro ni indege ya polar (C indege) muburyo busanzwe bwo mumaso, ni ubuso butari inkingi. Mubisanzwe, ubwiza bwa A-yerekanwe na safiro ya kirisiti iruta iya C-yerekanwe kristu, hamwe na dislokisiyo nkeya, imiterere ya Mosaic hamwe nuburyo bwuzuye bwa kirisiti, bityo ikagira imikorere myiza yo kohereza urumuri. Muri icyo gihe, bitewe na Al-O-Al-O atomike ihuza indege mu ndege a, ubukana no kwambara birwanya A-safiro irarenze cyane ugereranije na C. Kubwibyo, A-icyerekezo gikoreshwa cyane nkibikoresho byidirishya; Byongeye kandi, safiro ifite kandi dielectric imwe ihoraho kandi ihindagurika cyane, kuburyo ishobora gukoreshwa muburyo bwa tekinoroji ya microelectronics, ariko no mukuzamura imiyoboro ihebuje, nko gukoresha TlBaCaCuO (TbBaCaCuO), Tl-2212, gukura ya heterogeneous epitaxial superconducting firime kuri cerium oxyde (CeO2) safiro compte substrate. Ariko, nanone kubera ingufu nini za Al-O, biragoye gutunganya.

Gushyira mu bikorwaR / M indege ya safiro wafer

Indege ya R-ni ubuso butari inkingi ya safiro, bityo rero guhinduka kumwanya wa R-indege mubikoresho bya safiro birayiha imiterere itandukanye yubukanishi, ubushyuhe, amashanyarazi, na optique. Muri rusange, R-ubuso bwa safiro substrate ikundwa mugushira kwa heteroepitaxial ya silicon, cyane cyane kuri semiconductor, microwave na microelectronics ihuza imiyoboro yumuzunguruko, mugukora amashanyarazi, ibindi bintu birenze urugero, birwanya imbaraga nyinshi, gallium arsenide nayo irashobora gukoreshwa kuri R- Ubwoko bwo gukura. Kugeza ubu, hamwe na terefone zikoresha ubwenge hamwe na sisitemu ya mudasobwa ya tablet, R-face sapphire substrate yasimbuye ibikoresho bya SAW byari bisanzwe bikoreshwa kuri terefone zifite ubwenge na mudasobwa ya tablet, bitanga substrate y'ibikoresho bishobora kuzamura imikorere.

Niba hari ihohoterwa, hamagara gusiba