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2 cm 50.8mm Sapphire Wafer C-Indege M-indege R-indege A-indege Ubunini 350um 430um 500um

2 cm 50.8mm Safiro Wafer C-Indege M-indege R-indege A-indege Ubunini 350um 430um 500um Ishusho Yerekanwe
  • 2 cm 50.8mm Sapphire Wafer C-Indege M-indege R-indege A-indege Ubunini 350um 430um 500um
  • 2 cm 50.8mm Sapphire Wafer C-Indege M-indege R-indege A-indege Ubunini 350um 430um 500um
  • 2 cm 50.8mm Sapphire Wafer C-Indege M-indege R-indege A-indege Ubunini 350um 430um 500um

Ibisobanuro bigufi:

Safiro ni ikintu cyihariye cyo guhuza imiterere yumubiri, imiti n’ibikoresho bya optique, bigatuma irwanya ubushyuhe bwinshi, ihungabana ry’ubushyuhe, isuri y’amazi n’umusenyi, hamwe no gushushanya.


Ibicuruzwa birambuye

Ibicuruzwa

Kugaragaza ibyerekezo bitandukanye

Icyerekezo

C (0001) -Igice

R (1-102) -Igice

M (10-10) -Igisubizo

A (11-20) -Igice
Umutungo wumubiri

C axis ifite urumuri rwa kirisiti, naho izindi axe zifite urumuri rubi.Indege C iringaniye, nibyiza gukata.

R-indege ikomeye cyane kurenza A.

 M indege ikandagiye, ntabwo byoroshye gukata, byoroshye gukata. Ubukomezi bwa A-indege buri hejuru cyane ugereranije na C-indege, igaragarira mukurwanya kwambara, kwihanganira gushushanya no gukomera cyane;Kuruhande A-indege ni indege ya zigzag, byoroshye guca;
Porogaramu

C-yerekanwe na safiro substrate ikoreshwa mugukuza amafirime yabitswe III-V na II-VI, nka nitride ya gallium, ishobora kubyara ibicuruzwa bya LED byubururu, diode ya laser, hamwe na progaramu ya infragre.
Ibi biterwa ahanini nuko inzira yo gukura kwa safiro kristu ikikije C-axis irakuze, igiciro ni gito, imiterere yumubiri na chimique irahagaze, kandi tekinoroji ya epitaxy kuri C-indege irakuze kandi ihamye.

R-yerekanwe substrate gukura kwa silicon itandukanye yabitswe, ikoreshwa muri microelectronics ihuza imirongo.
Byongeye kandi, umuvuduko mwinshi wuzuzanya hamwe na sensor sensor birashobora kandi gushirwaho mugikorwa cyo gutunganya firime yo gukura kwa epitaxial silicon.R-substrate irashobora kandi gukoreshwa mugukora amasasu, ibindi bikoresho birenze urugero, birwanya imbaraga nyinshi, gallium arsenide.

 Ikoreshwa cyane mugukuza amafirime adafite polar / igice-polar ya GaN epitaxial kugirango yongere imikorere yumucyo. A-yerekanwe kuri substrate itanga uruhushya rumwe / ruciriritse, kandi urwego rwo hejuru rwokwirinda rukoreshwa muburyo bwa tekinoroji ya mikorobe.Ubushyuhe bwo hejuru burashobora kubyazwa umusaruro A-shingiro rirambuye.
Ubushobozi bwo gutunganya Pattern Sapphire Substrate (PSS): Muburyo bwo Gukura cyangwa Etching, nanoscale yihariye ya microstructure isanzwe yateguwe kandi ikorwa kumurongo wa safiro kugirango igenzure imiterere yumucyo wa LED, kandi igabanye inenge zitandukanye muri GaN ikura kuri substrate ya safiro. , kuzamura ubwiza bwa epitaxy, no kuzamura kwimbere kwimbere ya LED no kongera imikorere yo gukuramo urumuri.
Mubyongeyeho, prism ya safiro, indorerwamo, lens, umwobo, cone nibindi bice byubatswe birashobora gutegurwa ukurikije ibyo abakiriya bakeneye.

Kumenyekanisha umutungo

 Ubucucike Gukomera gushonga Ironderero ryerekana (rigaragara na infragre) Kohereza (DSP) Dielectric ihoraho
3.98g / cm3 9 (mohs) 2053 ℃ 1.762 ~ 1.770 ≥85% 11.58@300K kuri C axis (9.4 kuri A axis）

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