8Mu 200mm 4H-N SiC Wafer Ikora dummy icyiciro cyubushakashatsi

Ibisobanuro bigufi:

Uko ubwikorezi, ingufu n’amasoko yinganda bigenda bitera imbere, ibyifuzo bya elegitoroniki yizewe kandi ikora neza bikomeje kwiyongera.Kugirango uhuze ibikenewe kugirango imikorere ya semiconductor itezimbere, abakora ibikoresho bareba ibikoresho bigari bya semiconductor, nka 4H SiC Prime Grade portfolio ya 4H n -ubwoko bwa silicon karbide (SiC).


Ibicuruzwa birambuye

Ibicuruzwa

Bitewe nimiterere yihariye yumubiri na elegitoronike, ibikoresho bya 200mm ya SiC wafer ya semiconductor ikoreshwa mugukora ibintu byinshi, ubushyuhe bwinshi, birwanya imirasire, hamwe nibikoresho bya elegitoroniki byihuta.8inch SiC substrate igiciro kigenda kigabanuka buhoro buhoro uko ikoranabuhanga rigenda ritera imbere kandi ibyifuzo biriyongera.Iterambere rya tekinoloji ya vuba riganisha ku musaruro wakozwe na 200mm ya SiC wafers.Ibyiza byingenzi byibikoresho bya SiC wafer ugereranije na wafers ya Si na GaAs: Imbaraga zumuriro wamashanyarazi wa 4H-SiC mugihe cyo gusenyuka kwa avalanche birenze gahunda yubunini burenze agaciro kangana na Si na GaAs.Ibi biganisha ku kugabanuka gukabije kuri leta irwanya Ron.Ubushobozi buke kuri leta, bufatanije nubucucike buri hejuru hamwe nubushyuhe bwumuriro, butuma ikoreshwa ryurupfu ruto kubikoresho byamashanyarazi.Ubushyuhe bwinshi bwa SiC bugabanya ubukana bwumuriro wa chip.Ibikoresho bya elegitoroniki yibikoresho bishingiye kuri waferi ya SiC birahagaze neza mugihe ndetse no ku bushyuhe butajegajega, ibyo bigatuma ibicuruzwa byizerwa cyane.Carbide ya Silicon irwanya cyane imirasire ikomeye, idatesha agaciro ibikoresho bya elegitoroniki ya chip.Ubushyuhe bukabije bwo gukora bwa kristu (zirenga 6000C) buragufasha gukora ibikoresho byizewe cyane kubikorwa bikarishye hamwe nibisabwa bidasanzwe.Kugeza ubu, turashobora gutanga ibyiciro bito 200mmSiC wafer ihamye kandi idahwema kandi dufite ububiko mububiko.

Ibisobanuro

Umubare Ingingo Igice Umusaruro Ubushakashatsi Dummy
1. Ibipimo
1.1 polytype -- 4H 4H 4H
1.2 Icyerekezo ° <11-20> 4 ± 0.5 <11-20> 4 ± 0.5 <11-20> 4 ± 0.5
2. Ibikoresho by'amashanyarazi
2.1 dopant -- Ubwoko bwa Azote Ubwoko bwa Azote Ubwoko bwa Azote
2.2 Kurwanya ohm · cm 0.015 ~ 0.025 0.01 ~ 0.03 NA
3. Ibikoresho bya mashini
3.1 diameter mm 200 ± 0.2 200 ± 0.2 200 ± 0.2
3.2 ubunini μm 500 ± 25 500 ± 25 500 ± 25
3.3 Icyerekezo ° [1- 100] ± 5 [1- 100] ± 5 [1- 100] ± 5
3.4 Uburebure bwimbitse mm 1 ~ 1.5 1 ~ 1.5 1 ~ 1.5
3.5 LTV μm ≤5 (10mm * 10mm) ≤5 (10mm * 10mm) ≤10 (10mm * 10mm)
3.6 TTV μm ≤10 ≤10 ≤15
3.7 Umuheto μm -25 ~ 25 -45 ~ 45 -65 ~ 65
3.8 Intambara μm ≤30 ≤50 ≤70
3.9 AFM nm Ra≤0.2 Ra≤0.2 Ra≤0.2
4. Imiterere
4.1 Ubucucike bwa micropipe ea / cm2 ≤2 ≤10 ≤50
4.2 ibyuma atom / cm2 ≤1E11 ≤1E11 NA
4.3 TSD ea / cm2 00500 0001000 NA
4.4 BPD ea / cm2 0002000 0005000 NA
4.5 TED ea / cm2 0007000 0010000 NA
5. Ubwiza bwiza
5.1 imbere -- Si Si Si
5.2 Kurangiza -- Si-face CMP Si-face CMP Si-face CMP
5.3 agace ea / wafer ≤100 (ubunini≥0.3μm) NA NA
5.4 gushushanya ea / wafer ≤5, Uburebure bwose200mm NA NA
5.5 Impande
chips / indents / ibice / ikizinga / kwanduza
-- Nta na kimwe Nta na kimwe NA
5.6 Agace ka polytype -- Nta na kimwe Ubuso ≤10% Ubuso ≤30%
5.7 Ikimenyetso cy'imbere -- Nta na kimwe Nta na kimwe Nta na kimwe
6. Ubwiza bwinyuma
6.1 inyuma kurangiza -- Umudepite Umudepite Umudepite
6.2 gushushanya mm NA NA NA
6.3 Inyuma yinyuma
chip / indents
-- Nta na kimwe Nta na kimwe NA
6.4 Inyuma yinyuma nm Ra≤5 Ra≤5 Ra≤5
6.5 Ikimenyetso cyinyuma -- Ikimenyetso Ikimenyetso Ikimenyetso
7. Impande
7.1 inkombe -- Chamfer Chamfer Chamfer
8. Ipaki
8.1 gupakira -- Epi-yiteguye hamwe na vacuum
gupakira
Epi-yiteguye hamwe na vacuum
gupakira
Epi-yiteguye hamwe na vacuum
gupakira
8.2 gupakira -- Multi-wafer
gupakira
Multi-wafer
gupakira
Multi-wafer
gupakira

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