150mm 6 cm 0.7mm 0.5mm Safiro Wafer Substrate Umwikorezi C-Indege SSP / DSP
Porogaramu
Gusaba waferi ya santimetero 6 zirimo:
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2. Gukora lazeri: Wafer ya safiro irashobora kandi gukoreshwa nka substrate ya laser, kugirango ifashe kunoza imikorere ya laser no kongera igihe cya serivisi.
3. Gukora Semiconductor: Wafers ya safiro ikoreshwa cyane mugukora ibikoresho bya elegitoroniki na optoelectronic, harimo synthesis optique, selile izuba, ibikoresho bya elegitoroniki byihuta cyane, nibindi.
4.
Ibisobanuro
Ibikoresho | Isuku ryinshi kristaliste Al2O3, wafiro wafer. |
Igipimo | 150 mm +/- 0,05 mm, santimetero 6 |
Umubyimba | 1300 +/- 25 um |
Icyerekezo | Indege C (0001) kuri M (1-100) indege 0.2 +/- 0.05 dogere |
Icyerekezo cyibanze | Indege +/- 1 dogere |
Uburebure bwibanze | 47.5 mm +/- 1 mm |
Gutandukana kwinshi (TTV) | <20 um |
Umuheto | <25 um |
Intambara | <25 um |
Coefficient yo Kwagura Ubushyuhe | 6.66 x 10-6 / ° C ibangikanye na C axis, 5 x 10-6 / ° C perpendicular kuri C axis |
Imbaraga za Dielectric | 4.8 x 105 V / cm |
Umuyoboro uhoraho | 11.5 (1 MHz) hafi ya C axis, 9.3 (1 MHz) perpendicular kuri C axis |
Gutakaza Dielectric Tangent (bita ibintu byo gutandukana) | munsi ya 1 x 10-4 |
Amashanyarazi | 40 W / (mK) kuri 20 ℃ |
Kuringaniza | uruhande rumwe rusize (SSP) cyangwa uruhande rumwe rusize (DSP) Ra <0.5 nm (na AFM). Uruhande rwinyuma rwa SSP wafer rwari rwiza kuri Ra = 0.8 - 1.2 um. |
Kwimura | 88% +/- 1% @ 460 nm |
Igishushanyo kirambuye
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