Igihe kirekire gihoraho cyo gutanga 8inch SiC imenyesha

Kugeza ubu, isosiyete yacu irashobora gukomeza gutanga icyiciro gito cya 8inchN yo mu bwoko bwa SiC wafers, niba ufite icyitegererezo gikenewe, nyamuneka umbaze. Dufite ibyitegererezo by'icyitegererezo twiteguye kohereza.

Igihe kirekire gihoraho cyo gutanga 8inch SiC imenyesha
Igihe kirekire gihoraho cyo gutanga 8inch SiC imenyesha1

Mu rwego rwibikoresho bya semiconductor, isosiyete imaze gutera intambwe nini mubushakashatsi no guteza imbere sisitemu nini ya SiC. Mugukoresha imbuto zayo bwite nyuma yo kwaguka kwinshi kwa diametre, isosiyete imaze gukura neza ya santimetero 8 zo mu bwoko bwa NC ya SiC, ikemura ibibazo bitoroshye nkumurima wubushyuhe butaringaniye, kumenagura kristu hamwe na gaz icyiciro cyibikoresho bikwirakwizwa mugikorwa cyo gukura kwa kirisiti ya SIC ya santimetero 8, kandi byihutisha iterambere ryikinini kinini cya SIC hamwe n’ikoranabuhanga ryigenga kandi ryigenga. Kuzamura cyane uruganda rwibanze mu guhatanira amasoko ya SiC imwe rukumbi. Muri icyo gihe, isosiyete iteza imbere cyane ikusanyamakuru ry’ikoranabuhanga hamwe n’uburyo bunini bwa silicon carbide substrate yo gutegura umurongo w’igeragezwa, ishimangira guhanahana tekinike n’ubufatanye mu nganda mu masoko yo mu majyepfo no mu majyepfo, kandi igafatanya n’abakiriya guhora basubiramo imikorere y’ibicuruzwa, kandi bigateza imbere umuvuduko wo gukoresha inganda za karibide.

8inch N-Ubwoko bwa SiC DSP

Umubare Ingingo Igice Umusaruro Ubushakashatsi Dummy
1. Ibipimo
1.1 polytype -- 4H 4H 4H
1.2 Icyerekezo ° <11-20> 4 ± 0.5 <11-20> 4 ± 0.5 <11-20> 4 ± 0.5
2. Ibikoresho by'amashanyarazi
2.1 dopant -- Ubwoko bwa Azote Ubwoko bwa Azote Ubwoko bwa Azote
2.2 Kurwanya ohm · cm 0.015 ~ 0.025 0.01 ~ 0.03 NA
3. Ibikoresho bya mashini
3.1 diameter mm 200 ± 0.2 200 ± 0.2 200 ± 0.2
3.2 ubunini μm 500 ± 25 500 ± 25 500 ± 25
3.3 Icyerekezo ° [1- 100] ± 5 [1- 100] ± 5 [1- 100] ± 5
3.4 Uburebure bwimbitse mm 1 ~ 1.5 1 ~ 1.5 1 ~ 1.5
3.5 LTV μm ≤5 (10mm * 10mm) ≤5 (10mm * 10mm) ≤10 (10mm * 10mm)
3.6 TTV μm ≤10 ≤10 ≤15
3.7 Umuheto μm -25 ~ 25 -45 ~ 45 -65 ~ 65
3.8 Intambara μm ≤30 ≤50 ≤70
3.9 AFM nm Ra≤0.2 Ra≤0.2 Ra≤0.2
4. Imiterere
4.1 Ubucucike bwa micropipe ea / cm2 ≤2 ≤10 ≤50
4.2 ibyuma atom / cm2 ≤1E11 ≤1E11 NA
4.3 TSD ea / cm2 00500 0001000 NA
4.4 BPD ea / cm2 0002000 0005000 NA
4.5 TED ea / cm2 0007000 0010000 NA
5. Ubwiza bwiza
5.1 imbere -- Si Si Si
5.2 Kurangiza -- Si-face CMP Si-face CMP Si-face CMP
5.3 agace ea / wafer ≤100 (ubunini≥0.3μm) NA NA
5.4 gushushanya ea / wafer ≤5, Uburebure bwose200mm NA NA
5.5 Impande
chips / indents / ibice / ikizinga / kwanduza
-- Nta na kimwe Nta na kimwe NA
5.6 Agace ka polytype -- Nta na kimwe Ubuso ≤10% Ubuso ≤30%
5.7 Ikimenyetso cy'imbere -- Nta na kimwe Nta na kimwe Nta na kimwe
6. Ubwiza bwinyuma
6.1 inyuma kurangiza -- Umudepite Umudepite Umudepite
6.2 gushushanya mm NA NA NA
6.3 Inyuma yinyuma
chip / indents
-- Nta na kimwe Nta na kimwe NA
6.4 Inyuma yinyuma nm Ra≤5 Ra≤5 Ra≤5
6.5 Ikimenyetso cyinyuma -- Ikimenyetso Ikimenyetso Ikimenyetso
7. Impande
7.1 inkombe -- Chamfer Chamfer Chamfer
8. Ipaki
8.1 gupakira -- Epi-yiteguye hamwe na vacuum
gupakira
Epi-yiteguye hamwe na vacuum
gupakira
Epi-yiteguye hamwe na vacuum
gupakira
8.2 gupakira -- Multi-wafer
gupakira
Multi-wafer
gupakira
Multi-wafer
gupakira

Igihe cyo kohereza: Apr-18-2023