Kugeza ubu, isosiyete yacu irashobora gukomeza gutanga icyiciro gito cya 8inchN yo mu bwoko bwa SiC wafers, niba ufite icyitegererezo gikenewe, nyamuneka umbaze.Dufite ibyitegererezo by'icyitegererezo twiteguye kohereza.
Mu rwego rwibikoresho bya semiconductor, isosiyete imaze gutera intambwe nini mubushakashatsi no guteza imbere kristu nini ya SiC.Mugukoresha imbuto zayo za kirisiti nyuma yo kwaguka kwinshi kwa diameter, isosiyete imaze gukura neza ya santimetero 8 zo mu bwoko bwa N-SiC ya kristu, ikemura ibibazo bitoroshye nkumurima wubushyuhe butaringaniye, kumenagura kristu hamwe no gukwirakwiza ibikoresho fatizo bya gazi mugikorwa cyo gukura kwa 8-santimetero ya kirisiti ya SIC, kandi yihutisha imikurire yubunini bunini bwa SIC hamwe nubuhanga bwigenga kandi bugenzurwa.Kuzamura cyane uruganda rwibanze mu guhatanira amasoko ya SiC imwe ya kristal substrate inganda.Muri icyo gihe, isosiyete iteza imbere cyane gukusanya ikoranabuhanga hamwe nuburyo bunini bwa silicon carbide substrate yo gutegura umurongo wikigereranyo, ishimangira guhanahana tekinike nubufatanye bwinganda mumasoko yo hejuru no hepfo, kandi igafatanya nabakiriya guhora basubiramo imikorere yibicuruzwa, kandi hamwe iteza imbere umuvuduko wo gukoresha inganda ibikoresho bya silicon karbide.
| 8inch N-Ubwoko bwa SiC DSP | |||||
| Umubare | Ingingo | Igice | Umusaruro | Ubushakashatsi | Dummy |
| 1. Ibipimo | |||||
| 1.1 | polytype | -- | 4H | 4H | 4H |
| 1.2 | Icyerekezo | ° | <11-20> 4 ± 0.5 | <11-20> 4 ± 0.5 | <11-20> 4 ± 0.5 |
| 2. Ibikoresho by'amashanyarazi | |||||
| 2.1 | dopant | -- | Ubwoko bwa Azote | Ubwoko bwa Azote | Ubwoko bwa Azote |
| 2.2 | Kurwanya | ohm · cm | 0.015 ~ 0.025 | 0.01 ~ 0.03 | NA |
| 3. Ibikoresho bya mashini | |||||
| 3.1 | diameter | mm | 200 ± 0.2 | 200 ± 0.2 | 200 ± 0.2 |
| 3.2 | ubunini | μm | 500 ± 25 | 500 ± 25 | 500 ± 25 |
| 3.3 | Icyerekezo | ° | [1- 100] ± 5 | [1- 100] ± 5 | [1- 100] ± 5 |
| 3.4 | Uburebure bwimbitse | mm | 1 ~ 1.5 | 1 ~ 1.5 | 1 ~ 1.5 |
| 3.5 | LTV | μm | ≤5 (10mm * 10mm) | ≤5 (10mm * 10mm) | ≤10 (10mm * 10mm) |
| 3.6 | TTV | μm | ≤10 | ≤10 | ≤15 |
| 3.7 | Umuheto | μm | -25 ~ 25 | -45 ~ 45 | -65 ~ 65 |
| 3.8 | Intambara | μm | ≤30 | ≤50 | ≤70 |
| 3.9 | AFM | nm | Ra≤0.2 | Ra≤0.2 | Ra≤0.2 |
| 4. Imiterere | |||||
| 4.1 | Ubucucike bwa micropipe | ea / cm2 | ≤2 | ≤10 | ≤50 |
| 4.2 | ibyuma | atom / cm2 | ≤1E11 | ≤1E11 | NA |
| 4.3 | TSD | ea / cm2 | 00500 | 0001000 | NA |
| 4.4 | BPD | ea / cm2 | 0002000 | 0005000 | NA |
| 4.5 | TED | ea / cm2 | 0007000 | 0010000 | NA |
| 5. Ubwiza bwiza | |||||
| 5.1 | imbere | -- | Si | Si | Si |
| 5.2 | Kurangiza | -- | Si-face CMP | Si-face CMP | Si-face CMP |
| 5.3 | agace | ea / wafer | ≤100 (ubunini≥0.3μm) | NA | NA |
| 5.4 | gushushanya | ea / wafer | ≤5, Uburebure bwose200mm | NA | NA |
| 5.5 | Impande chips / indents / ibice / ikizinga / kwanduza | -- | Nta na kimwe | Nta na kimwe | NA |
| 5.6 | Agace ka polytype | -- | Nta na kimwe | Ubuso ≤10% | Ubuso ≤30% |
| 5.7 | Ikimenyetso cy'imbere | -- | Nta na kimwe | Nta na kimwe | Nta na kimwe |
| 6. Ubwiza bwinyuma | |||||
| 6.1 | inyuma kurangiza | -- | Umudepite | Umudepite | Umudepite |
| 6.2 | gushushanya | mm | NA | NA | NA |
| 6.3 | Inyuma yinyuma chip / indents | -- | Nta na kimwe | Nta na kimwe | NA |
| 6.4 | Inyuma yinyuma | nm | Ra≤5 | Ra≤5 | Ra≤5 |
| 6.5 | Ikimenyetso cyinyuma | -- | Ikimenyetso | Ikimenyetso | Ikimenyetso |
| 7. Impande | |||||
| 7.1 | inkombe | -- | Chamfer | Chamfer | Chamfer |
| 8. Ipaki | |||||
| 8.1 | gupakira | -- | Epi-yiteguye hamwe na vacuum gupakira | Epi-yiteguye hamwe na vacuum gupakira | Epi-yiteguye hamwe na vacuum gupakira |
| 8.2 | gupakira | -- | Multi-wafer gupakira | Multi-wafer gupakira | Multi-wafer gupakira |
Igihe cyo kohereza: Apr-18-2023