Mu nganda za semiconductor, substrates ni ibikoresho by'ibanze imikorere y'ibikoresho ishingiraho. Imiterere yabyo ifatika, ubushyuhe, n'amashanyarazi bigira ingaruka ku buryo butaziguye ku mikorere, ubwizerwe, n'uburyo ikoreshwa. Mu mahitamo yose, safiro (Al₂O₃), silikoni (Si), na silikoni karubide (SiC) byabaye substrates zikoreshwa cyane, buri imwe ikaba nziza mu nzego zitandukanye z'ikoranabuhanga. Iyi nkuru irasuzuma imiterere y'ibikoresho byayo, imiterere y'ikoreshwa, n'iterambere ry'ejo hazaza.
Safiro: Ifarasi y'akazi y'amatwi
Safiro ni ubwoko bwa aluminiyumu ya okiside imwe ifite agace ka hexagonal. Imiterere yayo y'ingenzi irimo ubukana budasanzwe (ubukana bwa Mohs 9), ubukana bwagutse bw'urumuri kuva kuri ultraviolet kugeza kuri infrared, hamwe no kudakoresha imiti cyane, bigatuma iba nziza cyane ku bikoresho bya optoelectronic ndetse n'ibidukikije bikomeye. Uburyo bugezweho bwo gukura nka Heat Exchange Method na Kyropoulos method, hamwe na chemical-mechanical polishing (CMP), ikora wafers zifite ubukana bwa sub-nanometer surface.
Ibyuma bya safiro bikoreshwa cyane muri LED na Micro-LED nk'ibice bya GaN epitaxial, aho ibice bya safiro bifite ibishushanyo (PSS) byongera imikorere myiza yo gukuramo urumuri. Bikoreshwa kandi mu bikoresho bya RF bifite imikorere yo hejuru bitewe n'ubushobozi bwabyo bwo gukingira amashanyarazi, no mu bikoresho by'ikoranabuhanga n'iby'indege nk'amadirishya arinda n'ibipfundikizo by'amasensa. Imbogamizi zirimo ubushobozi buke bwo gutwara ubushyuhe (35–42 W/m·K) no kudahuza neza na GaN, bisaba ko ibice bya buffer bikoreshwa kugira ngo bigabanye inenge.
Silicon: Umuryango w’ikoranabuhanga riciriritse
Silikoni ikomeje kuba inkingi y'ibikoresho by'ikoranabuhanga gakondo bitewe n'uko ikora mu nganda, uburyo bwo gutwara amashanyarazi bushobora guhinduka binyuze mu gukoresha imiti igabanya ubushyuhe, ndetse n'imiterere y'ubushyuhe iri hagati (uburyo bwo gutwara amashanyarazi ~ 150 W/m·K, aho gushonga kuri 1410°C). Hejuru ya 90% by'imiyoboro ihuriweho, harimo CPU, ibikoresho byo kwibuka, n'ibikoresho bya logique, bikorwa ku byuma bya silikoni. Silikoni kandi yiganjemo utunyangingo twa photovoltaic kandi ikoreshwa cyane mu bikoresho bifite ingufu nke kugeza ku ziciriritse nka IGBT na MOSFET.
Ariko, silikoni ihura n'imbogamizi mu gukoresha ingufu nyinshi n'ingufu nyinshi bitewe n'icyuho cyayo gito (1.12 eV) n'icyuho kitaziguye, ibyo bikaba bigabanya ubushobozi bwo kohereza urumuri neza.
Silicon Carbide: Umuhanga mu guhanga udushya ufite imbaraga nyinshi
SiC ni ibikoresho bya semiconductor byo mu gisekuru cya gatatu bifite umuvuduko munini (3.2 eV), voltage nyinshi zo kwangirika (3 MV/cm), ubwikorezi bwinshi bw'ubushyuhe (~490 W/m·K), n'umuvuduko wihuse wa electron saturation (~2×10⁷ cm/s). Ibi biranga bituma iba nziza ku bikoresho bifite voltage nyinshi, ingufu nyinshi, n'ingufu nyinshi. Substrates za SiC zikunze guhingwa binyuze mu gutwara umwuka ushyushye (PVT) ku bushyuhe burenga 2000°C, hamwe n'ibikenewe mu gutunganya neza.
Ikoreshwa ririmo imodoka zikoresha amashanyarazi, aho SiC MOSFETs zinoza imikorere myiza ya inverter ku kigero cya 5–10%, sisitemu z'itumanaho za 5G zikoresha SiC irinda ubushyuhe ku bikoresho bya GaN RF, hamwe n'imiyoboro y'amashanyarazi ifite umuyoboro w'amashanyarazi uhindagurika (HVDC) bigabanya igihombo cy'ingufu kugeza kuri 30%. Imbogamizi ni ibiciro biri hejuru (wafers za santimetero 6 zihenze cyane kurusha silikoni inshuro 20–30) hamwe n'imbogamizi zo gutunganya bitewe n'ubukana bukabije.
Inshingano z'inyongera n'icyerekezo cy'ejo hazaza
Safiro, silikoni, na SiC bigize urusobe rw'ibinyabuzima rwuzuzanya mu nganda za semiconductor. Safiro yiganje mu byuma bya optoelectronics, silikoni ishyigikira ibikoresho bisanzwe bya microelectronics n'ibikoresho bikoresha ingufu nke kugeza ku ziciriritse, naho SiC iyobora ibikoresho by'ikoranabuhanga bifite ingufu nyinshi, frequency nyinshi, kandi bikoresha ingufu nyinshi.
Iterambere ry'ejo hazaza ririmo kwagura ikoreshwa rya safiro muri za LED za UV ziremereye na za micro-LED, bigatuma heteroepitaxy ya GaN ishingiye kuri Si yongera imikorere ya frequency yo hejuru, no kongera umusaruro wa SiC wafer kugeza kuri santimetero 10 hamwe n'umusaruro mwiza n'ikiguzi cyiza. Ibi bikoresho byose hamwe birimo gutera udushya muri 5G, AI, na electrical mobility, bigahindura ikoranabuhanga rya semiconductor mu gisekuru gitaha.
Igihe cyo kohereza: Ugushyingo-24-2025